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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Size-dependent giant-magnetoresistance in millimeter scale GaAs/AlGaAs 2D electron devices

Large changes in the electrical resistance induced by the application of a small magnetic field are potentially useful for device-applications. Such Giant Magneto-Resistance (GMR) effects also provide new insights into the physical phenomena involved in the associated electronic transport. This study examines a ‘‘bell-shape’’ negative GMR that grows in magnitude with decreasing temperatures in mm-wide devices fabricated from the high-mobility GaAs/AlGaAs 2-Dimensional Electron System (2DES). Experiments show that the span of this magnetoresistance on the magnetic-field-axis increases with decreasing device width, W, while there is no concurrent Hall resistance, Rxy, correction. A multi-conduction model, including negative diagonal conductivity, and non-vanishing off-diagonal conductivity, reproduces experimental observations. The results suggest that a size effect in the mm-wide 2DES with mm-scale electron mean-free-paths is responsible for the observed ‘‘non-ohmic’’ size-dependent negative GMR.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2016

Self-heating and failure in scalable graphene devices

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. As a result, morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Design principles of tandem cascade photoelectrochemical devices

Cascade photoelectrocatalysis (PEC) is a possible method to improve the selectivity of solar-driven CO 2 reduction (CO 2 R). This concept can be realized by coupling different CO 2 R catalysts to different subcells in a multijunction photovoltaic (PV) stack. Efficient implementation will require careful tuning of the photocurrents and design of the photovoltages provided by the subcells to the CO 2 R catalysts in such a way as to facilitate the target reaction. Here, we outline the design principles of the tandem PEC approach using two-step conversion of CO 2 to ethylene in aqueous electrolyte, via a CO intermediate, as a model system. To perform this reaction, the first coupled PV-catalyst component should provide 4 electrons to reduce 2 molecules of CO 2 to CO; the second component should provide 8 electrons to reduce 2 CO molecules to C 2 H 4 . Based on known CO 2 R catalysts, the overpotential required to produce CO can be less than that required to reduce it to ethylene, creating the opportunity for improved efficiency. Cascade PEC can be realized in a three-terminal tandem (3TT) configuration using III–V-semiconductor based subcells coupled to Au (produces CO intermediate) and Cu (converts CO to ethylene). The current to each catalyst can be controlled by the area of the subcell exposed to the electrolyte, and the photovoltage is determined by the materials selected and device configuration. Operating conditions are found by simulating the coupled system using the open-source circuit simulator SPICE (Simulation Program with Integrated Circuits Emphasis). We identify conditions under which a 3TT configuration can have a higher solar to chemical conversion efficiency compared to a two-terminal two-junction tandem (2T 2J) with the same absorbers and a Cu catalyst only. We also show that 3TT PEC devices can be less sensitive to variations in catalyst activity compared to 2T devices. Lastly, we discuss the applications of cascade PEC to CO 2 reduction, using different intermediates, and to other chemical networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Palm top plasma focus device as a portable pulsed neutron source

Development of a palm top plasma focus device generating (5.2 {+-} 0.8) Multiplication-Sign 10{sup 4} neutrons/pulse into 4{pi} steradians with a pulse width of 15 {+-} 3 ns is reported for the first time. The weight of the system is less than 1.5 kg. The system comprises a compact capacitor bank, a triggered open air spark gap switch, and a sealed type miniature plasma focus tube. The setup is around 14 cm in diameter and 12.5 cm in length. The energy driver for the unit is a capacitor bank of four cylindrical commercially available electrolytic capacitors. Each capacitor is of 2 {mu}F capacity, 4.5 cm in diameter, and 9.8 cm in length. The cost of each capacitor is less than US$ 10. The internal diameter and the effective length of the plasma focus unit are 2.9 cm and 5 cm, respectively. A DC to DC converter power supply powered by two rechargeable batteries charges the capacitor bank to the desired voltage and also provides a trigger pulse of -15 kV to the spark gap. The maximum energy of operation of the device is 100 J (8 {mu}F, 5 kV, 59 kA) with deuterium gas filling pressure of 3 mbar. The neutrons have also been produced at energy as low as 36 J (3 kV) of operation. The neutron diagnostics are carried out with a bank of {sup 3}He detectors and with a plastic scintillator detector. The device is portable, reusable, and can be operated for multiple shots with a single gas filling.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

Broadband calibrated scattering parameters characterization of a superconducting quantum interference device amplifier

In this work, we characterize the 2-port scattering parameters of a superconducting quantum interference device amplifier at {approx}20 mK over several gigahertz of bandwidth. The measurement reference plane is positioned on a 6.25 {Omega} microstrip line situated directly at the input and output of the device by means of a thru-reflect-line cryogenic calibration procedure. From the scattering parameters, we derive the device available power gain, isolation, and input impedance over the 2-8 GHz range. This measurement methodology provides a path towards designing wide-band matching circuits for low impedance superconducting amplifiers operating at dilution refrigerator temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Investigation of electromigration in In{sub 2}Se{sub 3} nanowire for phase change memory devices

The decomposition of In{sub 2}Se{sub 3} nanowire phase change memory devices during current-driving operation was investigated. The devices were subjected to thermal/electrical stress with current density and electric field during the reset operation at 0.24–0.38 MA/cm{sup 2} and 5.3–6.4 kV/cm, respectively. After multiple operation cycles, a change in morphology and composition of the In{sub 2}Se{sub 3} nanowire was observed and led to the device failure. The transmission electron microscopy and energy dispersive analysis indicate that electromigration causes the catastrophic failure by void formation where In atoms migrate toward the cathode and Se atoms migrate toward the anode depending on their electronegativities.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3} ≡ SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ΔN{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ΔN{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The dominant factors affecting the memory characteristics of (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} high-k charge-trapping devices

The prototypical charge-trapping memory devices with the structure p-Si/Al{sub 2}O{sub 3}/(Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x}/Al{sub 2}O{sub 3}/Pt(x = 0.5, 0.3, and 0.1) were fabricated by using atomic layer deposition and RF magnetron sputtering techniques. A memory window of 7.39 V with a charge storage density of 1.97 × 10{sup 13 }cm{sup −2} at a gate voltage of ±11 V was obtained for the memory device with the composite charge trapping layer (Ta{sub 2}O{sub 5}){sub 0.5}(Al{sub 2}O{sub 3}){sub 0.5}. All memory devices show fast program/erase speed and excellent endurance and retention properties, although some differences in their memory performance exist, which was ascribed to the relative individual band alignments of the composite (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} with Si.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Current sheath formation dynamics and structure for different insulator lengths of plasma focus device

The breakdown phase of the UNU-ICTP plasma focus (PF) device was successfully simulated using the electromagnetic particle in cell method. A clear uplift of the current sheath (CS) layer was observed near the insulator surface, accompanied with an exponential increase in the plasma density. Both phenomena were found to coincide with the surge in the electric current, which is indicative of voltage breakdown. Simulations performed on the device with different insulator lengths showed an increase in the fast ionization wave velocity with length. The voltage breakdown time was found to scale linearly with the insulator length. Different spatial profiles of the CS electron density, and the associated degree of uniformity, were found to vary with different insulator lengths. The ordering, according to the degree of uniformity, among insulator lengths of 19, 22, and 26 mm agreed with that in terms of soft X-ray radiation yield observed from experiments. This suggests a direct correlation between CS density homogeneity near breakdown and the radiation yield performance. These studies were performed with a linearly increasing voltage time profile as input to the PF device.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

A bio-inspired memory device based on interfacing Physarum polycephalum with an organic semiconductor

The development of devices able to detect and record ion fluxes is a crucial point in order to understand the mechanisms that regulate communication and life of organisms. Here, we take advantage of the combined electronic and ionic conduction properties of a conducting polymer to develop a hybrid organic/living device with a three-terminal configuration, using the Physarum polycephalum Cell (PPC) slime mould as a living bio-electrolyte. An over-oxidation process induces a conductivity switch in the polymer, due to the ionic flux taking place at the PPC/polymer interface. This behaviour endows a current-depending memory effect to the device.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tunable strong nonlinearity of a micromechanical beam embedded in a dc-superconducting quantum interference device

We present a study of the controllable nonlinear dynamics of a micromechanical beam coupled to a dc-SQUID (superconducting quantum interference device). The coupling between these systems places the modes of the beam in a highly nonlinear potential, whose shape can be altered by varying the bias current and applied flux of the SQUID. We detect the position of the beam by placing it in an optical cavity, which sets free the SQUID to be used solely for actuation. This enables us to probe the previously unexplored full parameter space of this device. We measure the frequency response of the beam and find that it displays a Duffing oscillator behavior which is periodic in the applied magnetic flux. To account for this, we develop a model based on the standard theory for SQUID dynamics. In addition, with the aim of understanding if the device can reach nonlinearity at the single phonon level, we use this model to show that the responsivity of the current circulating in the SQUID to the position of the beam can become divergent, with its magnitude limited only by noise. This suggests a direction for the generation of macroscopically distinguishable superposition states of the beam.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host via defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A triple quantum dot based nano-electromechanical memory device

Colloidal quantum dots (CQDs) are free-standing nano-structures with chemically tunable electronic properties. This tunability offers intriguing possibilities for nano-electromechanical devices. In this work, we consider a nano-electromechanical nonvolatile memory (NVM) device incorporating a triple quantum dot (TQD) cluster. The device operation is based on a bias induced motion of a floating quantum dot (FQD) located between two bound quantum dots (BQDs). The mechanical motion is used for switching between two stable states, “ON” and “OFF” states, where ligand-mediated effective interdot forces between the BQDs and the FQD serve to hold the FQD in each stable position under zero bias. Considering realistic microscopic parameters, our quantum-classical theoretical treatment of the TQD reveals the characteristics of the NVM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Memory operation devices based on light-illumination ambipolar carbon-nanotube thin-film-transistors

We report the memory operation behavior of a light illumination ambipolar single-walled carbon nanotube thin film field-effect transistors devices. In addition to the high electronic-performance, such an on/off transistor-switching ratio of 10{sup 4} and an on-conductance of 18 μS, these memory devices have shown a high retention time of both hole and electron-trapping modes, reaching 2.8 × 10{sup 4} s at room temperature. The memory characteristics confirm that light illumination and electrical field can act as an independent programming/erasing operation method. This could be a fundamental step toward achieving high performance and stable operating nanoelectronic memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Parasitic effects in superconducting quantum interference device-based radiation comb generators

We study several parasitic effects on the implementation of a Josephson radiation comb generator based on a dc superconducting quantum interference device (SQUID) driven by an external magnetic field. This system can be used as a radiation generator similarly to what is done in optics and metrology, and allows one to generate up to several hundreds of harmonics of the driving frequency. First we take into account how the assumption of a finite loop geometrical inductance and junction capacitance in each SQUID may alter the operation of the devices. Then, we estimate the effect of imperfections in the fabrication of an array of SQUIDs, which is an unavoidable source of errors in practical situations. We show that the role of the junction capacitance is, in general, negligible, whereas the geometrical inductance has a beneficial effect on the performance of the device. The errors on the areas and junction resistance asymmetries may deteriorate the performance, but their effect can be limited to a large extent by a suitable choice of fabrication parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices

We investigate electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current–voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations; however, excellent agreement between the simulated and experimentally measured tunneling current magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical optimization parameters for the development of III–nitride unipolar electronic and optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhanced oxygen vacancy diffusion in Ta{sub 2}O{sub 5} resistive memory devices due to infinitely adaptive crystal structure

Metal oxide resistive memory devices based on Ta{sub 2}O{sub 5} have demonstrated high switching speed, long endurance, and low set voltage. However, the physical origin of this improved performance is still unclear. Ta{sub 2}O{sub 5} is an important archetype of a class of materials that possess an adaptive crystal structure that can respond easily to the presence of defects. Using first principles nudged elastic band calculations, we show that this adaptive crystal structure leads to low energy barriers for in-plane diffusion of oxygen vacancies in λ phase Ta{sub 2}O{sub 5}. Identified diffusion paths are associated with collective motion of neighboring atoms. The overall vacancy diffusion is anisotropic with higher diffusion barriers found for oxygen vacancy movement between Ta-O planes. Coupled with the fact that oxygen vacancy formation energy in Ta{sub 2}O{sub 5} is relatively small, our calculated low diffusion barriers can help explain the low set voltage in Ta{sub 2}O{sub 5} based resistive memory devices. Our work shows that other oxides with adaptive crystal structures could serve as potential candidates for resistive random access memory devices. We also discuss some general characteristics for ideal resistive RAM oxides that could be used in future computational material searches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Flywheel induction motor-generator for magnet power supply in small fusion device

A flywheel motor-generator (MG) for the toroidal field (TF) coils of a small fusion device was developed which utilizes a commercially available squirrel-cage induction motor. Advantages of the MG are comparably-long duration, quick power response, and easy implementation of power control compared with conventional capacitor-type power supply. A 55-kW MG was fabricated, and TF coils of a small fusion device were energized. The duration of the current flat-top was extended to 1 s which is much longer than those of conventional small devices (around 10–100 ms).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗