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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Device Would Monitor Body Parameters Continuously

Proposed miniature electronic circuit continuously measures temperature of human subject. Once mounted on subject's skin with medical adhesive tape, electronic thermometer remains in thermal equilibrium with subject's body; thereafter, no need to wait until thermometer reaches body temperature before taking reading. Design provides for switches used to set alarm alerting medical attendants if subject's temperature exceeds critical level. For use on very young child, electronic thermometer sewed into shirt or other suitable garment; device held in contact with skin, and child could not swallow it. Replacement of sensor and computing algorithm changes temperature monitor to cardiorespiratory monitor.

Cook, Joseph S., Jr.↗
NASA NTRS2004

Some Improvements in Signal-Conditioning Circuits

Two documents present wide-ranging discussions of some issues in the design and operation of signal-conditioning circuits. The first document focuses on active low-pass filter circuits that contain resistors, capacitors, and operational amplifiers. It describes design and operational problems encountered previously, deficiencies of prior designs, and four design improvements to overcome the deficiencies. These improvements are as follows: 1. An offset-calibration feature in which an electronic switch isolates a filter capacitor in order to preserve its voltage during a calibration performed to measure the offset voltage of the operational amplifier; 2. Configuring a pair of complementary operational amplifiers to prevent latchup and decrease the degree of nonlinearity in overall response; 3. Minimizing distortion by taking the filter output from the operational-amplifier output nodes instead of from one of the other nodes as in prior designs; and 4. Providing for switching different feedback resistors to change filter break frequencies. The second document addresses topics in the architecture of signal-conditioning and multiplexing circuitry. Improvements are described as being made with respect to greater compactness, increased flexibility in accommodating a variety of inputs, improvements in filter performance, simplification of wiring, and reconfigurability of designs.

Shuler, Robert L.↗
DOE OSTI2013

A 15GSa/s, 1.5GHz bandwidth waveform digitizing ASIC

The PSEC4 custom integrated circuit was designed for the recording of fast waveforms for use in large-area time-of-flight detector systems. The ASIC has been fabricated using the IBM-8RF 0.13 micron CMOS process. On each of 6 analog channels, PSEC4 employs a switched capacitor array (SCA) 256 samples deep, a ramp-compare ADC with 10.5 bits of DC dynamic range, and a serial data readout with the capability of region-of-interest windowing to reduce dead time. The sampling rate can be adjusted between 4 and 15 Gigasamples/second [GSa/s] on all channels and is servo-controlled on-chip with a low-jitter delay-locked loop (DLL). The input signals are passively coupled on-chip with a -3 dB analog bandwidth of 1.5 GHz. The power consumption in quiescent sampling mode is less than 50 mW/chip; at a sustained trigger and readout rate of 50 kHz the chip draws 100 mW. After fixed-pattern pedestal subtraction, the uncorrected integral non-linearity is 0.15% over an 750 mV dynamic range. With a linearity correction, a full 1 V signal voltage range is available.The sampling timebase has a fixed-pattern non-linearity with an RMS of 13%, which can be corrected for precision waveform feature extraction and timing.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Optimized pulsed write schemes improve linearity and write speed for low-power organic neuromorphic devices

Neuromorphic devices are becoming increasingly appealing as efficient emulators of neural networks used to model real world problems. However, no hardware to date has demonstrated the necessary high accuracy and energy efficiency gain over CMOS in both training via backpropagation and in read via vector matrix multiplication. Such shortcomings are due to device non-idealities, particularly asymmetric conductance tuning in response to uniform voltage pulse inputs. Here, by formulating a general circuit model for capacitive ion-exchange neuromorphic devices, we show that asymmetric nonlinearity in organic electrochemical neuromorphic devices (ENODes) can be suppressed by an appropriately chosen write scheme. Simulations based upon our model suggest that a nonlinear write-selector could reduce the switching voltage and energy, enabling analog tuning via a continuous set of resistance states (100 states) with extremely low switching energy (~170 fJ • µm –2 ). Furthermore, this work clarifies the pathway to neural algorithm accelerators capable of parallelism during both read and write operations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

An FPGA-Based Voltage Balancing Control for Multi-HV-IGBTs in Series Connection

The series connection of insulated gate bipolar transistors (IGBTs) allows operation at voltage levels higher than the rated voltage of one IGBT and has less power semiconductor costs compared to multilevel topologies. However, voltage unbalance during the switching transient is a challenge for series-connected device application. This paper presents an field-programmable gate array (FPGA)-based voltage balancing strategy for multiseries-connected high-voltage (HV)-IGBTs including an FPGA-based active voltage balancing control (AVBC) circuit integrated into the gate driver and the control for multiseries-connected IGBTs. As a result, the effectiveness of the control has been experimentally validated in a prototype using four 4.5 kV HV-IGBTs in series connection.

42 ENGINEERING↗
NASA NTRS1978

Chopper-stabilized phase detector

Phase-detector circuit for binary-tracking loops and other binary-data acquisition systems minimizes effects of drift, gain imbalance, and voltage offset in detector circuitry. Input signal passes simultaneously through two channels where it is mixed with early and late codes that are alternately switched between channels. Code switching is synchronized with polarity switching of detector output of each channel so that each channel uses each detector for half time. Net result is that dc offset errors are canceled, and effect of gain imbalance is simply change in sensitivity.

Hopkins, P. M.↗
NASA NTRS1986

Motor actuated vacuum door

Doors that allow scientific instruments to record and retrieve the observed data are often required to be designed and installed as a part of sounding rocket hardware. The motor-actuated vacuum door was designed to maintain a medium vacuum of the order of 0.0001 torr or better while closed, and to provide an opening 15 inches long x 8.5 inches wide while open for cameras to image Halley's comet. When the electric motor receives the instruction to open the door through the payload battery, timer, and relay circuit, the first operation is to unlock the door. After unlatching, the torque transmitted by the motor to the main shaft through the links opens the door. A microswitch actuator, which rides on the linear motion conversion mechanism, is adjusted to trip the limit switch at the end of the travel. The process is repeated in the reverse order to close the door. 'O' rings are designed to maintain the seal. Door mechanisms similar to the one described have flown on Aerobee 17.018 and Black Brant 27.047 payloads.

Hanagud, A. V.↗
NASA NTRS2010

NASA Engineering and Safety Center Technical Bulletin No. 10-01: Power MOSFET Thermal Instability

In the quest for faster switching times and lower “on resistance” the Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET), produced since 1998, has achieved most intended goals. Unfortunately, lower “on resistance” and higher switching speeds in the designs now being produced allow the charge carrier dominated region to develop conditions that could lead to thermal runaway. Temperatures above 450º C on any location within the part can cause the metals to begin migrating causing a fatal short circuit.

Metal-Oxide Semiconductor Field-Effect Transistor ↗
DOE OSTI2016

A superconducting direct-current limiter with a power of up to 8 MVA

A resistive switching superconducting fault current limiter (SFCL) for DC networks with a nominal voltage of 3.5 kV and a nominal current of 2 kA was developed, produced, and tested. The SFCL has two main units—an assembly of superconducting modules and a high-speed vacuum circuit breaker. The assembly of superconducting modules consists of nine (3 × 3) parallel–series connected modules. Each module contains four parallel-connected 2G high-temperature superconducting (HTS) tapes. The results of SFCL tests in the short-circuit emulation mode with a maximum current rise rate of 1300 A/ms are presented. The SFCL is capable of limiting the current at a level of 7 kA and break it 8 ms after the current-limiting mode begins. The average temperature of HTS tapes during the current-limiting mode increases to 210 K. After the current is interrupted, the superconductivity recovery time does not exceed 1 s.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1972

Development of high speed power thyristor: The gate assisted turn-off thyristor

A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off thyristor was rated at 609 V and 50 A with turn-off times of 2 microsec. Twenty-two units were delivered for evaluation in a series inverter circuit. In addition, test circuits designed to relate to the series inverter application were built and demonstrated.

Hamilton, D. R.↗
NASA NTRS1980

Integrated optic waveguide devices

Integrated optic waveguide circuits with a phase bias and modulator on the same chip were designed, fabricated, and tested for use in a fiber-optic rotation sensor (gyro) under development. Single mode fiber-optic pigtails were permanently coupled to the four ports of the chip. The switch format was based on coherent coupling between waveguides formed in Z-cut LiNbO3. The control of the coupling was achieved by electro-optically varying the phase propagation constants of each guide. Fiber-to-chip interfacing required the development of appropriate fixturing and manipulation techniques to achieve the close tolerance needed for high coupling efficiency between a fiber with an approximately 5 micron m core and a channel guide with a roughly 2 micron m by 5 micron m cross section. Switch and chip performance at 0.85 micron m is discussed as well as potential improvements related to insertion loss reduction, switching voltages, and suppression of Li2O out-diffusion.

Ramer, O. G.↗
NASA NTRS1995

Semiconductor/High-Tc-Superconductor Hybrid ICs

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

Burns, Michael J.↗
NASA NTRS2021

Development of Gallium Nitride Monolithic Microwave Integrated Circuits for Ka-Band Remote Sensing

We have been developing gallium nitride (GaN)monolithic microwave integrated circuits (MMICs) towards thegoal of implementing a single chip transceiver frontend forcloud radar arrays at Ka-band. We present our first iterationdesign, fabrication and test cycle implementation of GaN poweramplifiers (PAs), low noise amplifiers (LNAs), driver amplifier,single-pole- double and triple throw switches, and voltagecontrolled attenuator. These components are necessary forimplementing a transceiver unit cell concept with digitalcalibration capabilities to enable scalable array sizes for radarand radiometry.

Cao, Yu↗
DOE OSTI2013

Power Supply Changes for NSTX Resistive Wall Mode Coils

The National Spherical Torus Experiment (NSTX) has been designed and installed in the existing facilities at Princeton Plasma Physics Laboratory (PPPL). Most of the hardware, plant facilities, auxiliary sub-systems, and power systems originally used for the Tokamak Fusion Test Reactor (TFTR) have been used with suitable modifications to reflect NSTX needs. Prior to 2004, the NSTX power system was feeding twelve (12) circuits in the machine. In 2004 the Resistive Wall Mode (RWM) Coils were installed on the machine to correct error fields. There are six of these coils installed around the machine in the mid-plane. Since these coils need fast and accurate controls, a Switching Power Amplifier (SPA) with three sub-units was procured, installed and commissioned along with other power loop components. Two RWM Coils were connected in series and fed from one SPA sub-unit. After the initial RWM campaign, operational requirements evolved such that each of the RWM coils now requires separate power and control. Hence a second SPA with three sub-units has been procured and installed. The second unit is of improved design and has the controls and power components completely isolated. The existing thyristor rectifier is used as DC Link to both of the Switching Power Amplifiers. The controls for the RWM are integrated into the overall computer control of the DC Power systems for NSTX. This paper describes the design changes in the RWM Power system for NSTX.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Grid Ready, Flexible Large Power Transformer

GE Research and its partner Prolec GE have proposed a novel and breakthrough concept to improve the flexibility and interchangeability of large power transformers (LPTs). LPTs refer in this report to transformers with a power rating equal or greater than 100 MVA. The concept consists of a 3-phase autotransformer bank having one specified high voltage side (HV) voltage and three configurable low voltage side (LV) voltage taps. Moreover, the leakage impedance is adjustable offline using taps which allows to accommodate short-circuit requirements for a wide range of LPTs applications. The research performed aimed to develop and validate a cost-effective design of a flexible LPT and to demonstrate its competitiveness with the LPT fleet currently in operation in the U.S. The concept is intended for the long-term replacement of existing LPTs. In this project, the U.S based population of LPTs was analyzed to determine their commonality in power, voltage classes, and impedance range. Up to 9,700 units, currently deployed in the NERC’s Eastern and Western interconnection regions, were evaluated. This analysis yielded the specifications of two flexible LPTs to be designed to demonstrate the manufacturability and competitiveness of the concept: a 345 kV, 230 MVA and a 230 kV, 100 MVA LPTs. The two LPTs are both configurable to 161 kV, 138 kV, and 115 kV on the LV side and allow leakage impedance variation between 4% and 14%. The design output showed that the flexible LPT is manufacturable and competitive with conventional LPT. The proposed design has a power efficiency of 99.5% and a total active part weight increase ranging only between 15% and 28% relative to conventional LPTs it can be substituted with. Indeed, for the flexible LPT, the higher the LV side voltage is, the higher is its power rating. Hence, flexible LPTs are more competitive when compared with the largest conventional LPT they can replace. Power systems analyses were carried out to evaluate the performance of the flexible LPT when replacing an existing conventional LPT. These analyses showed that short-circuit and inrush currents will remain respectively within 15% and 9.4% of their original levels suggesting that no substations equipment is likely to be replaced due the installation of the flexible LPT. In addition, the analyses showed that the transient overvoltage anticipated at the impedance configuration switch will be manageable and will not pose any particular risk during lightning or switching events. This research proved that the deployment of flexible LPTs in the U.S power grid can greatly improve the grid reliability and its resiliency especially in the event of the loss of multiple LPTs. Moreover, the concept can significantly help reduce LPTs’ spare inventory by providing a high spare coverage level. The performed analysis showed that the designed 345 kV flexible LPT can serve as a spare for up to 34 units currently in operation in the U.S while the designed 230 kV flexible LPT can replace up to 101 units. Flexible LPTs offer new opportunities to U.S utilities to improve interchangeability of LPTs in the transmission system and to better strategize the upcoming renewal of about 70% of the population of LPTs anticipated to retire within the next two decades.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2019

Pulsed laser module based on a high-power semiconductor laser for the spectral range 1500 – 1600 nm

A laser source for bleaching passive Q-switches of erbium-ytterbium lasers is developed and studied. The developed and studied compact pulsed module (peak power exceeding 10 W in a pulse with a duration of 1 μs at a wavelength around 1550 nm) is made on the basis of a semiconductor lasers with an ultra-narrow waveguide integrated with a pulsed pump card. To optimise the output laser characteristics, a series resistance was used in the laser pump circuit. The powers of the free-space and fibre-coupled modules at a temperature of 25 °C are 15 and 12 W, respectively, at a pulse shape close to rectangular. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Complex Amorphous Dielectrics

This work focused on synthesizing a wide range of oxides containing two or more metals, and measuring their properties. Many simple metal oxides such as zirconium oxide, have been extensively studied in the past. We developed a technique in which we create a large number of compositions simultaneously and examine their behavior to understand trends and identify high performance materials. Superior performance generally comes in the form of increased responsiveness; in the materials we have studied this may mean more electrical charge for a given voltage in a capacitor, faster switching for a given drive in a transistor, more current for a given voltage in an ionic conductor, or more current for a given illumination in a solar cell. Some of the materials we have identified may find use in decreasing the power needed to operate integrated circuits, other materials could be useful for solar power or other forms of energy conversion.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗