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1,272 records · Page 71

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗

Optical Sensors Based on Single Arm Thin Film Waveguide Interferometer

Single-arm double-mode double-order optical waveguide interferometer utilizes interference between two propagating modes of different orders. Sensing effect results from the change in propagation conditions of the modes caused by the environment. The waveguide is made as an open asymmetric slab structure containing a dye-doped polymer film onto a fused quartz substrate. It is more sensitive to the change of environment than its conventional polarimetric analog using orthogonal modes (TE and TM) of the same order. The sensor still preserves the option of operating in polarimetric regime using a variety of mode combinations such as TE(sub 0)/TM(sub 0) (conventional), TE(sub 0)/TM(sub 1), TE(sub 1)/TM(sub 0), or TE(sub 1)/TM(sub 1) but can also work in nonpolarimetric regime using combinations TE(sub 0)/TM(sub 1) or TE(sub 0)/TM(sub 1). Utilization of different mode combinations simultaneously makes the device more versatile. Application of the sensor to gas sensing is based on doping polymer film with an organic indicator dye sensitive to a particular gas. Change of optical absorption spectrum of the dye caused by the gaseous pollutant results change of the reactive index of the dye-doped polymer film that can be detected by the sensor. As an indicator dyes, we utilize Bromocresol Purple doped into polymer poly(methyl) methacrylate, which shows a reversible growth of the absorption peak neat 600 nm after exposure to wet ammonia. We have built a breadboard prototype of the sensor with He-Ne laser as a light source and with a single mode fiber input and a multimode fiber output. The prototype showed sensitivity to temperature change of the order of 2 C per one full oscillation of the signal. The sensitivity of the sensor to the presence of wet ammonia is 200 ppm per one full oscillation of the signal. The further improvements include switching to a longer wavelength laser source (750-nm semiconductor laser), substitution of poly(methyl) methacrylate with hydrophilic high-temperature polyimide, and increase the doping rate of indicator dye. All these improvements are expected to bring sensitivity to 10 ppm of ammonia per one full oscillation of signal independent on the humidity of ambient air. The proposed sensor can be used as a robust and inexpensive stand-alone instrument for continuous environment pollution monitoring.

Sarkisov, S. S.↗

Biasable, Balanced, Fundamental Submillimeter Monolithic Membrane Mixer

This device is a biasable, submillimeter-wave, balanced mixer fabricated using JPL s monolithic membrane process a simplified version of planar membrane technology. The primary target application is instrumentation used for analysis of atmospheric constituents, pressure, temperature, winds, and other physical and chemical properties of the atmospheres of planets and comets. Other applications include high-sensitivity gas detection and analysis. This innovation uses a balanced configuration of two diodes allowing the radio frequency (RF) signal and local oscillator (LO) inputs to be separated. This removes the need for external diplexers that are inherently narrowband, bulky, and require mechanical tuning to change frequency. Additionally, this mixer uses DC bias-ability to improve its performance and versatility. In order to solve problems relating to circuit size, the GaAs membrane process was created. As much of the circuitry as possible is fabricated on-chip, making the circuit monolithic. The remainder of the circuitry is precision-machined into a waveguide block that holds the GaAs circuit. The most critical alignments are performed using micron-scale semiconductor technology, enabling wide bandwidth and high operating frequencies. The balanced mixer gets superior performance with less than 2 mW of LO power. This can be provided by a simple two-stage multiplier chain following an amplifier at around 90 GHz. Further, the diodes are arranged so that they can be biased. Biasing pushes the diodes closer to their switching voltage, so that less LO power is required to switch the diodes on and off. In the photo, the diodes are at the right end of the circuit. The LO comes from the waveguide at the right into a reduced-height section containing the diodes. Because the diodes are in series to the LO signal, they are both turned on and off simultaneously once per LO cycle. Conversely, the RF signal is picked up from the RF waveguide by the probe at the left, and flows rightward to the diodes. Because the RF is in a quasi- TEM (suspended, microstrip-like) mode, it impinges on the diodes in an anti-parallel mode that does not couple to the waveguide mode. This isolates the LO and RF signals. This operation is similar to a cross-bar mixer used at low frequencies, except the RF signal enters through the back-short end of the waveguide rather than through the side. The RF probe also conveys the down-converted intermediate frequency (IF) signal out to an off-chip circuit board through a simple LC low-pass filter to the left as indicated. The bias is brought to the diodes through a bypass capacitor at the top.

Siegel, Peter↗

Cryogenic Cooling for Myriad Applications-A STAR Is Born

Cryogenics, the science of generating extremely low temperatures, has wide applicability throughout NASA. The Agency employs cryogenics for rocket propulsion, high-pressure gas supply, breathable air in space, life support equipment, electricity, water, food preservation and packaging, medicine, imaging devices, and electronics. Cryogenic liquid oxygen and liquid hydrogen systems are also replacing solid rocket motor propulsion systems in most of the proposed launch systems, a reversion to old-style liquid propellants. In the late 1980s, NASA wanted a compact linear alternator/motor with reduced size and mass, as well as high efficiency, that had unlimited service life for use in a thermally driven power generator for space power applications. Prior development work with free-piston Stirling converters (a Stirling engine integrated with a linear actuator that produces electrical power output) had shown the promise of that technology for high-power space applications. A dual use for terrestrial applications exists for compact Stirling converters for onsite combined heat and power units. The Stirling cycle is also usable in reverse as a refrigeration cycle suitable for cryogenic cooling, so this Stirling converter work promised double benefits as well as dual uses. The uses for cryogenic coolers within NASA abound; commercial applications are similarly wide-ranging, from cooling liquid oxygen and nitrogen, to cryobiology and bio-storage, cryosurgery, instrument and detector cooling, semiconductor manufacturing, and support service for cooled superconducting power systems.

Source record↗

Spinoff 2010

Topics covered include: Burnishing Techniques Strengthen Hip Implants; Signal Processing Methods Monitor Cranial Pressure; Ultraviolet-Blocking Lenses Protect, Enhance Vision; Hyperspectral Systems Increase Imaging Capabilities; Programs Model the Future of Air Traffic Management; Tail Rotor Airfoils Stabilize Helicopters, Reduce Noise; Personal Aircraft Point to the Future of Transportation; Ducted Fan Designs Lead to Potential New Vehicles; Winglets Save Billions of Dollars in Fuel Costs; Sensor Systems Collect Critical Aerodynamics Data; Coatings Extend Life of Engines and Infrastructure; Radiometers Optimize Local Weather Prediction; Energy-Efficient Systems Eliminate Icing Danger for UAVs; Rocket-Powered Parachutes Rescue Entire Planes; Technologies Advance UAVs for Science, Military; Inflatable Antennas Support Emergency Communication; Smart Sensors Assess Structural Health; Hand-Held Devices Detect Explosives and Chemical Agents; Terahertz Tools Advance Imaging for Security, Industry; LED Systems Target Plant Growth; Aerogels Insulate Against Extreme Temperatures; Image Sensors Enhance Camera Technologies; Lightweight Material Patches Allow for Quick Repairs; Nanomaterials Transform Hairstyling Tools; Do-It-Yourself Additives Recharge Auto Air Conditioning; Systems Analyze Water Quality in Real Time; Compact Radiometers Expand Climate Knowledge; Energy Servers Deliver Clean, Affordable Power; Solutions Remediate Contaminated Groundwater; Bacteria Provide Cleanup of Oil Spills, Wastewater; Reflective Coatings Protect People and Animals; Innovative Techniques Simplify Vibration Analysis; Modeling Tools Predict Flow in Fluid Dynamics; Verification Tools Secure Online Shopping, Banking; Toolsets Maintain Health of Complex Systems; Framework Resources Multiply Computing Power; Tools Automate Spacecraft Testing, Operation; GPS Software Packages Deliver Positioning Solutions; Solid-State Recorders Enhance Scientific Data Collection; Computer Models Simulate Fine Particle Dispersion; Composite Sandwich Technologies Lighten Components; Cameras Reveal Elements in the Short Wave Infrared; Deformable Mirrors Correct Optical Distortions; Stitching Techniques Advance Optics Manufacturing; Compact, Robust Chips Integrate Optical Functions; Fuel Cell Stations Automate Processes, Catalyst Testing; Onboard Systems Record Unique Videos of Space Missions; Space Research Results Purify Semiconductor Materials; and Toolkits Control Motion of Complex Robotics.

Source record↗

Solid state lasers for use in non-contact temperature measurements

The last decade has seen a series of dramatic developments in solid state laser technology. Prominent among these has been the emergence of high power semiconductor laser diode arrays and a deepening understanding of the dynamics of solid state lasers. Taken in tandem these two developments enable the design of laser diode pumped solid state lasers. Pumping solid state lasers with semiconductor diodes relieves the need for cumbersome and inefficient flashlamps and results in an efficient and stable laser with the compactness and reliability. It provides a laser source that can be reliably used in space. These new coherent sources are incorporated into the non-contact measurement of temperature. The primary focus is the development and characterization of new optical materials for use in active remote sensors of the atmosphere. In the course of this effort several new materials and new concepts were studied which can be used for other sensor applications. The general approach to the problem of new non-contact temperature measurements has had two components. The first component centers on passive sensors using optical fibers; an optical fiber temperature sensor for the drop tube was designed and tested at the Marshall Space Flight Center. Work on this problem has given insight into the use of optical fibers, especially new IR fibers, in thermal metrology. The second component of the effort is to utilize the experience gained in the study of passive sensors to examine new active sensor concepts. By active sensor are defined as a sensing device or mechanism which is interrogated in some way be radiation, usually from a laser. The status of solid state lasers as sources for active non-contact temperature sensors are summarized. Some specific electro-optic techniques are described which are applicable to the sensor problems at hand. Work on some of these ideas is in progress while other concepts are still being worked out.

Buoncristiani, A. M.↗

Satellite Communications Applications Research

This report describes work performed by SDL in the development of monolithically-integrated master oscillator power amplifiers under the NASA-SCAR research contract. The goals of the program were to demonstrate high power diffraction-limited operation from a semiconductor laser with the following characteristics: (1) Output power of 0.5 to 1.0 W continuous-wave (cw); (2) Single spectral mode with greater than 20 dB of side mode suppression; (3) Single spatial mode operation; (4) Modulation capability of 0.5 GHz; and (5) Operating wavelength between 830-860 nm. Cw diffraction-limited output powers as high as 2.2 W were achieved while maintaining a single longitudinal mode. Side mode suppression ratios greater than 20 dB are typically obtained. The single spatial mode output has a Strehl ratio estimated at 0.85, and a high-speed modulation capability was demonstrated with a small-signal 3-dB roll-off at 1.0 GHz. Finally, all of this performance was obtained in the 860 nm wavelength band, which corresponds to the peak sensitivity of Si detectors. During the first option period, three deliverables were fabricated and delivered that included 1 distributed Bragg reflector (DBR) laser operating at 970 nm, 1 DBR laser operating at 860 nm, and one monolithic flared amplifier master oscillator power amplifier (MFA-MOPA) providing 0.5 W cw diffraction-limited output. During the second option period, a total of 5 MFA-MOPA devices were delivered, each operating to better than 1 W cw diffraction-limited at 860 nm.

Lang, Robert J.↗

Rugged, Portable, Real-Time Optical Gaseous Analyzer for Hydrogen Fluoride

Hydrogen fluoride (HF) is a primary evolved combustion product of fluorinated and perfluorinated hydrocarbons. HF is produced during combustion by the presence of impurities and hydrogen- containing polymers including polyimides. This effect is especially dangerous in closed occupied volumes like spacecraft and submarines. In these systems, combinations of perfluorinated hydrocarbons and polyimides are used for insulating wiring. HF is both highly toxic and short-lived in closed environments due to its reactivity. The high reactivity also makes HF sampling problematic. An infrared optical sensor can detect promptly evolving HF with minimal sampling requirements, while providing both high sensitivity and high specificity. A rugged optical path length enhancement architecture enables both high HF sensitivity and rapid environmental sampling with minimal gaseous contact with the low-reactivity sensor surfaces. The inert optical sample cell, combined with infrared semiconductor lasers, is joined with an analog and digital electronic control architecture that allows for ruggedness and compactness. The combination provides both portability and battery operation on a simple camcorder battery for up to eight hours. Optical detection of gaseous HF is confounded by the need for rapid sampling with minimal contact between the sensor and the environmental sample. A sensor is required that must simultaneously provide the required sub-parts-permillion detection limits, but with the high specificity and selectivity expected of optical absorption techniques. It should also be rugged and compact for compatibility with operation onboard spacecraft and submarines. A new optical cell has been developed for which environmental sampling is accomplished by simply traversing the few mm-thick cell walls into an open volume where the measurement is made. A small, low-power fan or vacuum pump may be used to push or pull the gaseous sample into the sample volume for a response time of a few seconds. The optical cell simultaneously provides for an enhanced optical interaction path length between the environmental sample and the infrared laser. Further, the optical cell itself is comprised of inert materials that render it immune to attack by HF. In some cases, the sensor may be configured so that the optoelectronic devices themselves are protected and isolated from HF by the optical cell. The optical sample cell is combined with custom-developed analog and digital control electronics that provide rugged, compact operation on a platform that can run on a camcorder battery. The sensor is inert with respect to acidic gases like HF, while providing the required sensitivity, selectivity, and response time. Certain types of combustion events evolve copious amounts of HF, very little of other gases typically associated with combustion (e.g., carbon monoxide), and very low levels of aerosols and particulates (which confound traditional smoke detectors). The new sensor platform could warn occupants early enough to take the necessary countermeasures.

Pilgrim, Jeffrey↗

Radiation Characterization of Commercial GaN Devices

Radiative feedback from primordial protostars and final mass of the first star Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. Based on previous materials and prototype device studies, it is expected that these commercial devices will be quite tolerant to the types of radiation encountered in space. This expectation needs to be verified and the study described herein was undertaken for that purpose. All of the parts discussed in this report are readily available commercially. The parts chosen for study are all targeted for RF applications. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 50 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 50 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in the tests performed in this study.

HEMT↗

Advances in polycrystalline thin-film photovoltaics for space applications

Polycrystalline, thin-film photovoltaics represent one of the few (if not the only) renewable power sources which has the potential to satisfy the demanding technical requirements for future space applications. The demand in space is for deployable, flexible arrays with high power-to-weight ratios and long-term stability (15-20 years). In addition, there is also the demand that these arrays be produced by scalable, low-cost, high yield, processes. An approach to significantly reduce costs and increase reliability is to interconnect individual cells series via monolithic integration. Both CIS and CdTe semiconductor films are optimum absorber materials for thin-film n-p heterojunction solar cells, having band gaps between 0.9-1.5 ev and demonstrated small area efficiencies, with cadmium sulfide window layers, above 16.5 percent. Both CIS and CdTe polycrystalline thin-film cells have been produced on a laboratory scale by a variety of physical and chemical deposition methods, including evaporation, sputtering, and electrodeposition. Translating laboratory processes which yield these high efficiency, small area cells into the design of a manufacturing process capable of producing 1-sq ft modules, however, requires a quantitative understanding of each individual step in the process and its (each step) effect on overall module performance. With a proper quantification and understanding of material transport and reactivity for each individual step, manufacturing process can be designed that is not 'reactor-specific' and can be controlled intelligently with the design parameters of the process. The objective of this paper is to present an overview of the current efforts at MMC to develop large-scale manufacturing processes for both CIS and CdTe thin-film polycrystalline modules. CIS cells/modules are fabricated in a 'substrate configuration' by physical vapor deposition techniques and CdTe cells/modules are fabricated in a 'superstrate configuration' by wet chemical methods. Both laser and mechanical scribing operations are used to monolithically integrate (series interconnect) the individual cells into modules. Results will be presented at the cell and module development levels with a brief description of the test methods used to qualify these devices for space applications. The approach and development efforts are directed towards large-scale manufacturability of established thin-film, polycrystalline processing methods for large area modules with less emphasis on maximizing small area efficiencies.

Lanning, Bruce R.↗

A Hydrodynamic Theory for Spatially Inhomogeneous Semiconductor Lasers: Numerical Results - 2

We present numerical results of the diffusion coefficients (DCs) in the coupled diffusion model derived in the preceding paper for a semiconductor quantum well. These include self and mutual DCs in the general two-component case, as well as density- and temperature-related DCs under the single-component approximation. The results are analyzed from the viewpoint of free Fermi gas theory with many-body effects incorporated. We discuss in detail the dependence of these DCs on densities and temperatures in order to identify different roles played by the free carrier contributions including carrier statistics and carrier-LO phonon scattering, and many-body corrections including bandgap renormalization and electron-hole (e-h) scattering. In the general two-component case, it is found that the self- and mutual- diffusion coefficients are determined mainly by the free carrier contributions, but with significant many-body corrections near the critical density. Carrier-LO phonon scattering is dominant at low density, but e-h scattering becomes important in determining their density dependence above the critical electron density. In the single-component case, it is found that many-body effects suppress the density coefficients but enhance the temperature coefficients. The modification is of the order of 10% and reaches a maximum of over 20% for the density coefficients. Overall, temperature elevation enhances the diffusive capability or DCs of carriers linearly, and such an enhancement grows with density. Finally, the complete dataset of various DCs as functions of carrier densities and temperatures provides necessary ingredients for future applications of the model to various spatially inhomogeneous optoelectronic devices.

Li, Jianzhong↗

G(sup 4)FET Implementations of Some Logic Circuits

Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET

Mojarradi, Mohammad↗