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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Photoelectrochemical electrodes

The surface of a moderate band gap semiconductor such as p-type molybdenum sulfide is modified to contain an adherent film of charge mediating ionene polymer containing an electroactive unit such as bipyridimium. Electron transport between the electrode and the mediator film is favorable and photocorrosion and recombination processes are suppressed. Incorporation of particles of catalyst such as platinum within the film provides a reduction in overvoltage. The polymer film is readily deposited on the electrode surface and can be rendered stable by ionic or addition crosslinking. Catalyst can be predispersed in the polymer film or a salt can be impregnated into the film and reduced therein.

Williams, R. M.↗
NASA NTRS1984

Threshold kinetics of a solar-simulator-pumped iodine laser

A model of the chemical kinetics of the n-C3F7I solar-simulator-pumped iodine laser is utilized to study the major kinetic processes associated with the threshold behavior of this experimental system. Excited-state diffusion to the cell wall is the dominant limiting factor below 5 torr. Excited-state diffusion to the cell wall is the dominant limiting factor below 5 torr. Excited-state recombination with the alkyl radical and quenching by the parent gas control threshold at higher pressures. Treatment of the hyperfine splitting and uncertainty in the pressure broadening are important factors in fixing the threshold level. In spite of scatter in the experimental data caused by instabilities in the simulator high-pressure high-pressure arc, reasonable agreement is achieved between the model and experiment. Model parameters arrived at are within the uncertainty range of values found in the literature.

Wilson, J. W.↗
NASA NTRS1984

Radiation damage and defect behavior in ion-implanted, lithium counterdoped silicon solar cells

Boron doped silicon n+p solar cells were counterdoped with lithium by ion implanation and the resultant n+p cells irradiated by 1 MeV electrons. The function of fluence and a Deep Level Transient Spectroscopy (DLTS) was studied to correlate defect behavior with cell performance. It was found that the lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. It is concluded that the annealing behavior is controlled by dissociation and recombination of defects. The DLTS studies show that counterdoping with lithium eliminates at least three deep level defects and results in three new defects. It is speculated that the increased radiation resistance of the counterdoped cells is due primarily to the interaction of lithium with oxygen, single vacancies and divacancies and that the lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Advanced designs for IPV nickel-hydrogen cells

Advanced designs for individual pressure vessel nickel-hydrogen cells have been concieved which should improve the cycle life at deep depths-of-discharge. Features of the designs which are new and not incorporated in either of the contemporary cells (Air Force/Hughes, Comsat) are: (1) use of alternate methods of oxygen recombination, (2) use of serrated edge separators to facilitate movement of gas within the cell while still maintaining required physical contact with the wall wick, and (3) use of an expandable stack to accommodate some of the nickel electrode expansion. The designs also consider electrolyte volume requirements over the life of the cells, and are fully compatible with the Air Force/Hughes design.

Smithrick, J. J.↗
NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗
NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗
NASA NTRS1983

Surface and allied studies in silicon solar cells

Two main results are presented. The first deals with a simple method that determines the minority-carrier lifetime and the effective surface recombination velocity of the quasi-neutral base of silicon solar cells. The method requires the observation of only a single transient, and is amenable to automation for in-process monitoring in manufacturing. This method, which is called short-circuit current decay, avoids distortion in the observed transient and consequent inacccuracies that arise from the presence of mobile holes and electrons stored in the p/n junction spacecharge region at the initial instant of the transient. The second main result consists in a formulation of the relevant boundary-value problems that resembles that used in linear two-port network theory. This formulation enables comparisons to be made among various contending methods for measuring material parameters of p/n junction devices, and enables the option of putting the description in the time domain of the transient studies in the form of an infinite series, although closed-form solutions are also possible.

Lindholm, F. A.↗
NASA NTRS1984

The annular flow electrothermal ramjet

The annular flow, electrothermal, plug ramjet is examined as a possible means of achieving rapid projectile acceleration to velocities for such applications as direct launch of spacebound payloads. The performance of this ramjet operating with hydrogen propellant is examined for cases where this working fluid is treated: (1) as a perfect gas, and (2) as a gas that is allowed to dissociate and ionize and then recombine with finite reaction rates in the nozzle. Performance results for these cases are compared to the performance of a conventional ramjet operating with perfect gas hydrogen propellant. The performance of the conventional ramjet is superior to that of the annular flow, electrothermal ramjet. However, it is argued that the mechanical complexities associated with conventional ramjet operation are difficult to attain, and for this reason the annular flow, electrothermal ramjet is more desirable as a launch system. Models are presented which describe both electrothermal plug ramjet and conventional ramjet operation, and it is shown that for a given flight velocity there is a rate of heat addition per unit propellant mass for which ramjet operation is optimized.

Shaw, B. D.↗
NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗
NASA NTRS1983

The atmosphere of a dirty-clathrate cometary nucleus - A two-phase, multifluid model

The dynamical and thermal structure of a dirty-clathrate cometary nucleus' gas atmosphere is presently given a self-consistent, transonic multifluid solution in which, although the heavy neutron and ion species are treated as a single fluid in the collision-dominated region, the photoproduced H is treated separately. The thermal profile of the atmosphere thus obtained is entirely different from those predicted by the earlier, single-fluid models as well as the multifluid models which assumed equipartition of energy between electrons and ions. While the electron gas, like the neutrals and the ions, cools due to expansion, its main mode of energy loss in the inner coma is by way of inelastic collisions with the predominant H2O molecule. The high electron temperature in the outer coma also decreases the efficiency of electron removal by dissociative recombination, thereby increasing electron density throughout the coma.

Marconi, M. L.↗
NASA NTRS1983

Nitrogen escape from Mars

The escape rate of nitrogen from Mars is calculated to be 2.3 x 10 to the 5th per sec for low solar flux conditions and 8.9 x 10 to the 5th per sec for high solar flux conditions. The major source of energetic atoms is dissociative recombination of ground state and vibrationally excited N2(+) ions. The measured N-15/N-14 isotope ratio can be reproduced by postulating an early dense atmosphere during which little differentiation occurred.

Fox, J. L.↗
NASA NTRS1983

Spectrophotometric observations of symbiotic stars and related objects

Calibrated optical spectrophotometric observations of 16 symbiotic and symbiotic-like objects are presented. The objects observed include Z And, T CrB, CH Cyg, CI Cyg, V1016 Cyg, V1329 Cyg, AG Dra, YY Her, RS Oph, XX Oph, AG Peg, AX Per, CL Sco, HM Sge, AS 289, and M1-2. Integrated emission-line intensities are tabulated for comparison with ultraviolet and infrared data, as well as with previous optical studies. The reddening to each of the objects is derived by assuming that Balmer lines are emitted in their case B recombination ratios. However, the values so derived are often systematically higher than reddening estimates from the ultraviolet 2200 A feature. Comparisons with the available data from other wavelength ranges are noted.

Blair, W. P.↗
NASA NTRS1983

Stratospheric condensation nuclei and possible solar influences

Balloon-borne measurements of condensation nuclei and H2SO4 molecules in large negative ion clusters have been made in the stratosphere at around 30 km altitude. The nuclei observed were in the 0.01-0.1 micron diameter range. Consideration was given to sunspot activity as a triggering event for ionization of upper atmospheric H2SO4 species and subsequent formation of the nuclei. A numerical model was defined for a steady state between the H2SO4 association and ion recombination in order to determine a critical nucleation rate. It is concluded that condensation nuclei are produced in ion nucleation in an H2SO4 supersaturated polar cloud chamber, with the process being initiated by solar flare particle ionization.

Hofmann, D. J.↗
NASA NTRS1984

Incoherent scatter observations of an artificially modified ionosphere

The 'experiment of opportunity' to test incoherent scatter radar techniques for the diagnostic study of a chemically induced modification of the ionosphere occasioned by the launch of the HEAO-C satellite is described. The optimal utilization of a steerable incoherent scatter radar for a short duration event is examined. The choice of keeping the antenna fixed to obtain good control data and excellent time resolution along a given direction versus scanning the antenna to obtain mixed spatial and temporal morphologies is discussed. Results for fixed position measurements, elevation scans, ion-drift, and total electron content are presented. The first unambiguous observations of a gas expansion 'snowplow effect' is reported along with the derivation of local and height-integrated plasma recombination rates and the full spatial, temporal, and dynamical morphologies of a large-scale ionospheric hole.

Wand, R. H.↗
NASA NTRS1983

White dwarfs and the interstellar medium

Radiation emanating from hot (T greater than 40,000 K) white dwarfs can create large volumes of ionized material containing substantial column densities of highly ionized species, in particular Si IV and C IV. The ions N V and O VI can also be produced by hot, hydrogen-rich white dwarfs. These ionization spheres may be detectable around the nearby dwarfs. The relatively high space motions of these stars coupled with long recombination times in the interstellar medium suggest that a white dwarf leaves a region of ionized material - a fossil Stroemgren trail - that marks its progress through the galaxy. White dwarfs create a patchy substrate of ionized gas in the galactic plane and lead to extended ionized regions out of the plane. The spatial frequency of hot white dwarfs indicates that they contribute a radiative energy comparable to that provided by nondegenerate stars and by supernovae and capable of affecting the ionization balance of the interstellar medium.

Dupree, A. K.↗
NASA NTRS1983

The damage equivalence of electrons, protons, alphas and gamma rays in rad-hard MOS devices

This paper reports on a study of damage equivalence in rad-hard MOS devices with 100,000 rads (SiO2) capability. Damage sensitivities for electrons of 1, 2, 3, 5, and 7 MeV, protons of 1, 3, 7, 22, and 40 MeV, 3.4-MeV alphas, and Co-60 gammas were measured and compared. Results indicated that qualitatively the same charge recombination effects occurred in hard oxide devices for doses of 100,000 rads (SiO2) as in soft oxide parts for doses of 1 to 4 krads (SiO2). Consequently, damage equivalency or non-equivalency depended on radiation type and energy. However, recovery effects, both during and after irradiation, controlled relative damage sensitivity and its dependency on total dose, dose rate, supply bias, gate bias, radiation type, and energy. Correction factors can be derived from these data or from similar tests of other hard oxide type, so as to properly evaluate the combined effects of the total space environment.

Stassinopoulos, E. G.↗
NASA NTRS1982

Enhanced diffusion of phosphorus at grain boundaries

Enhanced diffusion of phosphorus at grain boundaries in cast polycrystalline photovoltaic materials (Wacker, HEM, and Semix) was studied. It was found that the enhancements for the three materials were the same, indicating that the properties of boundaries are similar, even though they were grown by different techniques. In addition, it was observed that grain boundaries capable of enhancing the diffusion always have strong recombination activities. Both phenomena could be related to dangling bonds existing at the boundaries. The present study gives the first evidence that incoherent second order twins of 111/115-plane type are diffusion-active.

Cheng, L. J.↗