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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,279 records · Page 71
All sourcesNASA NTRSDOE OSTI
NASA NTRS2020

An embedded planar-foil capacitor material, FPGA based interposer, aimed at improving system performance and reduced board size for space based electronics

This paper presents work to date in developing, and testing an embedded planar-foil capacitor based interposer intended to be integrated together with high-density components such as Field Programmable Gate Arrays (FPGAs), and Application Specific Integrated Circuits (ASIC). FPGA devices typically have a large number of I/O and power pins. The high speed enabled by these devices requires a large number of discrete bypass capacitors as close as possible to the power pins. These capacitors take up a considerable amount of the board area on the application circuit board. The developed interposer replaces these components freeing up space of traditional bypass capacitors for other circuitry.

Cheng, Ben↗
NASA NTRS2020

An Embedded Planar-Foil Capacitor Material, FPGA Based Interposer, Aimed at Improving System Performance and Reduced Board Size for Space Based Electronics

This paper presents our work to date in developing, and testing an embedded planar-foil capacitor based interposer intended to be integrated together with high-density components such as Field Programmable Gate Arrays (FPGAs), and Application Specific Integrated Circuit (ASIC) applications. FPGA devices typically have a large number of I/O and power pins. The high speed enabled by these devices requires a large number of discrete bypass capacitors as close as possible to the power pins. These capacitors take up a considerable amount of the board area on the application circuit board. Our interposer replaces these components freeing up space of traditional bypass capacitors for other circuitry. Our Interposer focuses on the needs of Micro Semi’s RTG4 FPGA. We developed the interposer using COTS embedded foil capacitors. The Interposer is customized to the capacitance requirements for each of the FPGA banks. We evaluated three foil manufactures Oak Mitsui, 3M and TDK. The three different designs were evaluated, but we will focus on the Oak-Mitsui based Interposer that we constructed and tested. Through simulations, we validate the horizontal and vertical interconnect inductances, that FPGA decoupling requirements are met. The use of the interposer results in an overall reduction in our Printed Wiring Board (PWB) area.

Hunter, Don J↗
DOE OSTI2020

High-Performance Solid-State Lithium-Ion Battery with Mixed 2D and 3D Electrodes

It is well established that the miniaturization of batteries has not kept pace with the miniaturization of electronics. Three-dimensional (3D) batteries, which were developed with the intent of improving microbattery performance, have had limited success because of fabrication challenges and material constraints. Solid-state, 3D batteries have been particularly susceptible to these shortcomings. In this paper we demonstrate that the incorporation of a high conductivity, solid electrolyte is the key to achieving a non-planar solid-state battery with high areal-capacity and high power-density. The model, 2.5D platform used in this study is a modification of the more typical 3D configuration in that it is comprised of a cathode array of pillars (3D) and a planar (2D) anode. This 2.5D geometry exploits the use of a high conductivity, ionogel electrolyte (10 -3 S cm -1 ) which interpenetrates the 3D electrode array. The 2.5D battery offers high areal energy densities from the post array while the high-conductivity, solid electrolyte enables high power densities (3.7 mWh cm -2 at 2.8 mW cm -2 ). Here, the reported solid-state 2.5D device exceeds the energy and power densities of any 3D solid-state system and the derived multiphysics model provides guidance for achieving significantly higher energy and power densities.

2.5D batteries↗
DOE OSTI2023

Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments

A sidewall treatment process is proposed to recover the external quantum efficiency (EQE) loss in AlGaInP micro-LEDs ( μ LEDs). The proposed sidewall treatment consists of thermal annealing, ammonium sulfide chemical treatment, and sidewall passivation using atomic-layer deposition (ALD). The devices with sidewall treatment show improved optical power of more than 500% and 190% at 5 and 100 A cm −2 , respectively, compared to devices with ALD sidewall passivation. The reduction in EQE was 20% when shrinking the device dimensions from 100 × 100 to 20 × 20 μ m 2 . Finally, this work reveals that AlGaInP μ LEDs can be energy efficient by employing proper sidewall treatments.

Wong, Matthew S.↗
DOE OSTI2025

Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga 2 O 3

Gallium oxide (Ga 2 O 3 ) is a promising ultrawide bandgap semiconductor for next-generation power electronics and optoelectronic devices. Here, temperature-dependent and polarization-resolved photoluminescence excitation spectroscopy data, complemented by hybrid-functional first-principles calculations, are presented, and a microscopic model is derived that explains the interplay of hole migration, defect trapping, and carrier recombination at defects underlying thermal quenching phenomena in α- and β-Ga 2 O 3 . In α-Ga 2 O 3 , the UV emission is attributed to self-trapped holes, while the blue luminescence arises from defect-related processes, including gallium split vacancies and their defect complexes. Calculations reveal an energy barrier of 88 meV for self-trapped hole migration in α-Ga 2 O 3 , consistent with activation energies from temperature-dependent photoluminescence. This enables efficient trapping by defects, enhancing blue luminescence and quenching UV emission. In β-Ga 2 O 3 , a higher migration barrier of 0.36 eV reduces the defect trapping, allowing the UV self-trapped hole emission to remain intense, with blue luminescence emerging only at elevated temperatures. These results establish a direct link between self-trapped hole migration, defect trapping, and thermal quenching of emission in both phases. The insights advance the understanding of carrier dynamics in ultrawide bandgap oxides and may guide defect engineering for high-performance functional devices.

Hajizadeh, Nima [Leibniz-Institut im Forschungsver↗
DOE OSTI2023

Quantum Efficiency Gain in 2D Perovskite Photo and X‐Ray Detectors

Abstract The perovskite polycrystalline thin film detector fabricated by solution method is a promising low‐cost, scalable technology for radiation imaging, but its thin volume limits the sensing efficiency for high‐energy X‐ray photons. This work reports 2D perovskite thin film photo‐diodes with a detection gain when sensing visible and X‐ray photons. Detailed power and temperature‐dependent device characterizations reveal a charge multiplication effect to be responsible for the observed high gain. This is caused by a disparity in electron and hole transport, where electron transport is retarded by a trap/de‐trap process via shallow trap states, whereas the hole transport is fast enough to produce a photoconductive gain in satisfying the charge neutrality. The 2D perovskite made with butylamine spacers is also found to exhibit a larger efficiency gain than those made with phenylethylamines because of the higher likelihood of forming shallow traps in the former. The thin film diodes feature a high temporal response over 1 MHz due to the fast charge collection across a thin volume, and the discovery provides device physics mechanisms in connection to material structure‐function relationship for future optoelectronics design that can boost the efficiency of X‐ray sensing and dim light detection.

2D perovskites↗
DOE OSTI2025

Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga₂O₃

Atomic‐scale phase transformations profoundly influence the functional properties of Ga₂O₃ polymorphs. By combining irradiation experiments with microstructure characterization and theoretical approaches, phase‐specific energy‐dissipation pathways in α‐, β‐, and ε‐Ga₂O₃ are uncovered and strategies for targeted property design are outlined. Competing antiphase boundaries (APBs) and twin domain boundaries (TDBs) promote irreversible α→ε interconversion through domain fragmentation. In β‐Ga₂O₃, defect‐induced stress gradients drive two distinct local transformations: surface Ga‐aggregated β→δ that stabilizes transient states, and latent‐track‐confined β→κ phase transition with recoverable distortions via cation reordering. Under electronic excitation, β‐Ga₂O₃ forms nanohillocks via robust GaO₆ octahedra (high density/strong Ga─O bonds), while α/ε‐Ga₂O₃ generates nanopores from tetrahedral Ga looseness (low bonding energy), highlighting phase‐dependent surface dynamics shaped by atomic packing and bonding anisotropy. Defect‐regulated recombination suppresses visible photoluminescence in α/β‐Ga₂O₃, whereas in ε‐Ga₂O₃ bandgap narrowing of ΔE: 0.30 eV is observed, enhancing emission. Linking phase‐dependent defect‐carrier interactions and metastable‐phase engineering in Ga₂O₃ enables property optimization for power‐electronics and optoelectronics devices.

electronic state configuration↗
DOE OSTI2023

Dimer Acceptor Adopting a Flexible Linker for Efficient and Durable Organic Solar Cells

Abstract Organic solar cells (OSCs) have advanced rapidly due to the development of new photovoltaic materials. However, the long‐term stability of OSCs still poses a severe challenge for their commercial deployment. To address this issue, a dimer acceptor ( d T9TBO) with flexible linker is developed for incorporation into small‐molecule acceptors to form molecular alloy with enhanced intermolecular packing and suppressed molecular diffusion to stabilize active layer morphology. Consequently, the PM6 : Y6 : d T9TBO‐based device displays an improved power conversion efficiency (PCE) of 18.41 % with excellent thermal stability and negligible decay after being aged at 65 °C for 1800 h. Moreover, the PM6 : Y6 : d T9TBO‐based flexible OSC also exhibits excellent mechanical durability, maintaining 95 % of its initial PCE after being bended repetitively for 1500 cycles. This work provides a simple and effective way to fine‐tune the molecular packing with stabilized morphology to overcome the trade‐off between OSC efficiency and stability.

Chemistry↗
DOE OSTI2020

Full-Array Noise Performance of Deployment-Grade SuperSpec mm-Wave On-Chip Spectrometers

SuperSpec is an on-chip filter bank spectrometer designed for wideband moderate-resolution spectroscopy at millimeter wavelengths, employing TiN kinetic inductance detectors. SuperSpec technology will enable large-format spectroscopic integral field units suitable for high-redshift line intensity mapping and multi-object spectrographs. In previous results, we have demonstrated noise performance in individual detectors suitable for photon noise-limited ground-based observations at excellent mm-wave sites. Here, we present the noise performance of a full R similar to 275 spectrometer measured using deployment-ready RF hardware and software. We report typical noise equivalent powers through the full device of similar to 3x10 -16 W Hz -1/2 at expected sky loadings, which are photon noise dominated. Based on these results, we plan to deploy a six-spectrometer demonstration instrument to the Large Millimeter Telescope in early 2020.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Conceptual design of HTS magnets for fusion nuclear science facility

Second-generation high temperature superconductors (HTS) are available for producing >20 T at the magnet bore compared to 13–16 T for lower temperature superconducting (LTS) toroidal field magnets proposed in recent fusion energy systems studies (FESS) of Fusion Nuclear Science Facility (FNSF). HTS may enable higher fusion power density and smaller device size. High current density cables of multi-layered REBCO tapes have achieved >10 kA at 4–20 K operation in short sample tests for fusion. High current density cables are required for engineering design of FNSF to allow space for interior plasma components. High current density HTS magnets are particularly attractive in reducing the size of a fusion device, beneficial for compact tokamaks, due to their space constraints. Successful HTS magnet development may enable the design of smaller and cheaper fusion pilot plants with a mission of demonstrating net electricity. It may also offer significant cost and performance advantages in non-fusion applicants such as nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI). Furthermore, we developed HTS magnet design concepts for a compact FNSF radial build in order to define the coil size, winding pack mechanical loading and engineering requirements. Partnering with vendors in the US, PPPL is also testing high current cable prototypes aiming at enabling low cost cable technology toward 100 A/mm 2 engineering current density over the winding pack desired in high field model coil development for compact fusion pilot plants.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Liquid lithium divertor analysis using coupled plasma material interaction model

A liquid lithium divertor can improve performance of future fusion devices by creating efficient power exhaust and improving the energy confinement via pumping of the hydrogen isotopes. In addition, significantly higher heat fluxes can be handled if controlled vapor shielding is used to redistribute the divertor heat flux over a wider area. Design and optimization of such a system calls for an analysis model which includes a strong two-way coupling between the plasma and divertor material. The incoming plasma heat and particle flux will affect the divertor surface temperature, which is a defining factor of the lithium evaporative and sputtered flux going into the plasma. Results of the coupled model based on the plasma edge code SOLPS-ITER and the computational fluid dynamics (CFD) code ANSYS-CFX will be presented for different configurations. An analytical slab flow model is used as a heat transfer boundary condition for SOLPS, defining particle flux from the wall via calculation of the surface temperature. At the final step, results of the SOLPS analysis are verified using a 3D CFD magnetohydrodynamics (MHD) analysis which uses heat and particle flux from SOLPS as a boundary condition. In addition to plasma heat flux, both analytical and CFD temperature models include several plasma material interaction effects, such as lithium evaporation, condensation and sputtering based on deuterium target flux. New adatom sputtering model based on the available experimental data is presented. Analytical model is expanded to include free surface axisymmetric configurations. Results of parametric studies of the divertor configurations with different lithium inlet temperature and velocity will be presented leading to the optimal design resulting in the lowest possible lithium contamination in the core.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

A 3D nonfullerene electron acceptor with a 9,9'-bicarbazole backbone for high-efficiency organic solar cells

One-dimensional ladder-type nonfullerene electron acceptors (NFAs) with large fused ring cores have been typically used in highly efficient organic solar cells (OSCs). Prior studies have demonstrated that small molecule acceptors with three-dimensional (3D) structures may exhibit low energy loss, and hence can lead to improved OSC performance. In this study, a new 3D NFA ( 99CZ-8F ) with a 9,9'-bicarbazole backbone was designed, synthesized, and characterized, where two linear A-D-A architectures were linked by a single N–N bond. 99CZ-8F showed strong absorption in the range of 500–800 nm in the solid state, which is complementary to the absorption of the donor material PM6 . After regulating the morphology of the active layer via binary solvent mixture, the optimized device exhibited a maximum power conversion efficiency (PCE) of 6.6 ± 0.1%, which is among the best reported values for 3D nonfullerene electron acceptor based OSCs

14 SOLAR ENERGY↗
DOE OSTI2020

High-efficiency solar thermophotovoltaic system using a nanostructure-based selective emitter

Herein, we present the design, fabrication, optimization, and experimental results of a high-efficiency planar solar thermophotovoltaic (STPV) system utilizing a micro-textured absorber and a nanostructure multilayer metal-dielectric coated selective emitter fabricated on a tungsten (W) substrate. Light absorptance of more than 90% was achieved at visible and near-infrared wavelengths using the microtextured absorbing surface. The nanostructure selective emitter consists of two thin-film optical coatings of silicon nitride (Si3N4) and a layer of W in between to increase the surface emissivity in spectral regimes matching the quantum efficiency of the thermophotovoltaic (TPV) cells. Gallium antimonide (GaSb)-based TPV cells are used in our STPV design. The experiment was conducted at different operating temperatures using a high-power continuous wave laser diode stack as a simulated source of concentrated incident radiation. Our experimental setup measured a maximum electrical output power density of 1.71 W/cm 2 at 1676 K STPV temperature, and the overall power conversion efficiency of 8.4% after normalizing the output power density to the emitter area. This is the highest STPV system efficiency reported so far for any experimental STPV device. The incident optical laser power on the absorber side was 131 W. This is equivalent to a solar concentration factor of ~2100, which is within the practical limit and readily achievable with Fresnel lens setup.

14 SOLAR ENERGY↗
DOE OSTI2023

Pulsed laser ejection of single-crystalline III-V solar cells from GaAs substrates

The best III-V solar cells start out as single-crystalline multilayers on GaAs substrates. Separating these multilayers from their growth substrate enables higher performance and wafer reuse, which are both critical for terrestrial III-V solar cell viability. Here, we remove rigidly bonded, 16 mm 2 x 3.5μm thick devices from a GaAs substrate using an unfocused Nd:YAG laser pulse. The pulse is absorbed by a low-bandgap, lattice-matched layer below the device, driving an ablation event that ejected the crystalline multilayer from the substrate. Minutes of selective wet-chemical etching and device finishing yield a 0.1 cm 2 device with a 17.4% power conversion efficiency and open-circuit voltage of 1.07 V, using AM1.5 direct with no anti-reflection coating. We show that the performance is comparable to similar cells produced via conventional processes. We discuss unique process characteristics, such as the potential to separate wafer-sized solar cells per laser pulse.

14 SOLAR ENERGY↗
DOE OSTI2021

Drift kinetic theory of alpha transport by tokamak perturbations

We report that upcoming tokamak experiments fuelled with deuterium and tritium are expected to have large alpha particle populations. Such experiments motivate new attention to the theory of alpha particle confinement and transport. A key topic is the interaction of alpha particles with perturbations to the tokamak fields, including those from ripple and magnetohydrodynamic modes like Alfvén eigenmodes. These perturbations can transport alphas, leading to changed localization of alpha heating, loss of alpha power and damage to device walls. Alpha interaction with these perturbations is often studied with single-particle theory. In contrast, we derive a drift kinetic theory to calculate the alpha heat flux resulting from arbitrary perturbation frequency and periodicity (provided these can be studied drift kinetically). Novel features of the theory include the retention of a large effective collision frequency resulting from the resonant alpha collisional boundary layer, correlated interactions over many poloidal transits and finite orbit effects. Heat fluxes are considered for the example cases of ripple and the toroidal Alfvén eigenmode (TAE). The ripple heat flux is small. The TAE heat flux is significant and scales with the square of the perturbation amplitude, allowing the derivation of constraints on mode amplitude for avoidance of significant alpha depletion. A simple saturation condition suggests that TAEs in one upcoming experiment will not cause significant alpha transport via the mechanisms in this theory. However, saturation above the level suggested by the simple condition, but within numerical and experimental experience, which could be accompanied by the onset of stochasticity, could cause significant transport.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗