Phase change solidification phenomena for thermal control Annual summary report, 21 Nov. 1968 - 31 Dec. 1969
Solidification effects on performance and suitability of phase-change materials in thermal control devices
Golden, J. O.↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Miniature grinder for solid specimens
Machine grinds fines to appropriate micron sizes with the least biological trauma and greatest degree of reproducibility. Device controls destruction of material so that recovery of microorganisms is as great as possible and protects operation and grinding products from exogenous contamination.
Houser, C. P.↗
Energy absorber uses expanded coiled tube
Mechanical shock mitigating device, based on working material to its failure point, absorbs mechanical energy by bending or twisting tubing. It functions under axial or tangential loading, has no rebound, is area independent, and is easy and inexpensive to build.
Johnson, E. F.↗
Precise measurement of charged defects in III-V compounds (supplement 2)
Experimental methods and related theory which will permit the measurement of low concentrations of vacancies and other defects in III-V compound semiconductors are discussed. Once the nature of these defects has been determined, this information can be incorporated into a transport theory for devices constructed from these materials, and experiments conducted to test the theory. The vacancies and other defects in the III-V compounds are detected by measurement of the nuclear magnetic resonance (NMR) line width. Most of the III-V compounds have at least one isotope with a nuclear quadrupole moment. In a crystal with a cubic crystal field (characteristic of most III-V compounds) there is no quadrupole splitting of the Zeeman resonance line. However, a defect removes the cubic symmetry locally and causes splitting which result in a change of the NMR width. This change can be used to detect the presence of vacancies.
Soest, J. F.↗
Study of materials for space processing
Materials were selected for device applications and their commercial use. Experimental arrangements were also made for electrical characterization of single crystals using electrical resistivity and Hall effect measurements. The experimental set-up was tested with some standard samples.
Lal, R. B.↗
Directionally solidified ceramic eutectics
The aligned structures which result from the directional solidification (DS) of ceramic eutectics are of interest because of their potential for use in electronic devices and as structural materials. Techniques for growing DS ceramic eutectics are briefly discussed. The principles and controlling parameters of DS eutectic growth are described. The criteria for plane-front growth and the effect of growth rate on interlamellar or interfiber spacing are discussed. Examples of the effect of growth parameters on the alignment of the microstructure are given. Examples of the mechanical properties of directionally solidified oxide-oxide ceramics are also cited.
Ashbrook, R. L.↗
Titan probe technology assessment and technology development plan study
The need for technology advances to accomplish the Titan probe mission was determined by defining mission conditions and requirements and evaluating the technology impact on the baseline probe configuration. Mission characteristics found to be technology drivers include (1) ten years dormant life in space vacuum; (2) unknown surface conditions, various sample materials, and a surface temperature; and (3) mission constraints of the Saturn Orbiter Dual Probe mission regarding weight allocation. The following areas were identified for further development: surface sample acquisition system; battery powered system; nonmetallic materials; magnetic bubble memory devices, and the landing system. Preentry science, reliability, and weight reduction and redundancy must also be considered.
Castro, A. J.↗
Semiconductor technology program. Progress briefs
The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.
Bullis, W. M.↗
Semiconductor technology program. Progress briefs
Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.
Bullis, W. M.↗
The 'depletion layer' of amorphous p-n junctions
It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).
Von Roos, O.↗
Semiconductor technology program: Progress briefs
Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.
Galloway, K. F.↗
Finite element modelling of non-linear magnetic circuits using Cosmic NASTRAN
The general purpose Finite Element Program COSMIC NASTRAN currently has the ability to model magnetic circuits with constant permeablilities. An approach was developed which, through small modifications to the program, allows modelling of non-linear magnetic devices including soft magnetic materials, permanent magnets and coils. Use of the NASTRAN code resulted in output which can be used for subsequent mechanical analysis using a variation of the same computer model. Test problems were found to produce theoretically verifiable results.
Sheerer, T. J.↗
FSA future directions: FSA technology activities in FY86
The silicon material, advanced silicon sheet, device research, and process research activities are explained. There will be no new initiatives. Many activities are targeted for completion and the emphasis will then be on technology transfer. Industrial development of the fluidized-bed reactor (FBR) deposition technology is proceeding. Technology transfer and industry funding of sheet development are continuing.
Leipold, M. H.↗
Millimeter-band oscillations based on resonant tunneling in a double-barrier diode at room temperature
A double-barrier diode at room temperature has yielded oscillations with fundamental frequencies up to 56 GHz and second harmonics up to 87 GHz. The output powers at these frequencies were about 60 and 18 microW, respectively. These results are attributed to a recent improvement in the material parameters of the device and to the integration of the device into a waveguide resonator. The most successful diode to date has thin (about 1.5 nm) AlAs barriers, a 4.5-nm-wide GaAs quantum well, and 2 x 10 to the 17th/cu cm doping concentration in the n-GaAs outside the barriers. This particular diode is expected to oscillate at frequencies higher than those achieved by any reported p-n tunnel diode.
Brown, E. R.↗
Chemical durability of high-temperature superconductor YBa2Cu3O(7-x) in aqueous environments
The stability of YBa2Cu3O(7-x) in water and 100-percent humidity has been investigated at three temperatures, using pH measurements, X-ray diffraction, and scanning electron microscopy. The oxide-ceramic superconductor is highly unstable; it reacts rapidly with water and degrades in moisture. Dissolution of the oxide perovskite in water is highly incongruent. The corrosion products are found to be BaCO3, CuO, O2, etc. Barium hydroxide is first formed and further reacts with atmospheric CO2 to form needle-shaped crystals of BaCO3. For any practical applications, devices made from these materials would have to be protected with an impermeable coating to prevent deterioration from atmosphere.
Bansal, Narottam P.↗
Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989
Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.
Efron, Uzi↗
Ground based preparation for microgravity growth of alloy semiconductors
Ground-based research conducted in order to prepare a microgravity space flight experiment is presented. The thermophysical properties of a PbSnTe alloy used for semiconductors are investigated, and furnace calibration and fluid-flow measurements are performed. The alloy has a zero energy crossing at approximately 40 percent SnTe in its band-gap vs composition diagram, which facilitates the design of long-wavelength IR detectors and lasers. The uniformity of devices made from this material depends on the ratio of PbTe and SnTe and requires the composition of the crystal growth to be closely controlled. The main obstacle to such control is the fact that liquid of this material is always solutally or thermally unstable, and, in a high-temperature gradient, the double convective instability cannot be made stable by balancing thermal and solutal expansion. In order to extend the science of crystal growth, the limits of suppression of convection have to be tested in low earth orbit.
Fripp, Archibald L.↗
Optically induced excitonic electroabsorption in a periodically delta-doped InGaAs/GaAs multiple quantum well structure
Large optically induced Stark shifts have been observed in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/sq cm, an absolute quantum well absorption change of 7000/cm was measured with a corresponding differential absorption change as high as 80 percent. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.
Larsson, A.↗