Study on Localized SERS by Spatially Selective Deposition of Raman Analytes
No abstract prepared.
36 MATERIALS SCIENCE↗
SEARCH · Engineering Papers
Results for “Laser Spectroscopy”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Surface-Enhanced Resonant Raman Scattering Of p-Benzosemiquinone Radical Anion
No abstract prepared.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Measurements and Modeling of Turbulent Transport in the Tore Supra Tokamak
This paper presents an overview of recent advances in modeling and measurements of turbulence in Tore Supra plasmas. Spatio-temporal properties of turbulence are discussed in relation with transport models. An explanation is proposed for the k{sup -3} decay of wave number spectra, which are observed by using both coherent laser scattering and Doppler reflectometry. Also the interplay between turbulence and flows has been investigated. It is shown that toroidal rotation results from a competition between neoclassical and turbulence flow generation. Finally a new method has been proposed to determine the transport coefficients of impurities. These coefficients are usually well above the neoclassical prediction.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Pressure Induced Phase Transitions In SmVO{sub 4}: An In-Situ Raman Study
High pressure room temperature Raman investigation on SmVO{sub 4} was carried out up to 19 GPa. The ambient zircon phase was observed to remain stable up to 5.8 GPa. At higher pressure two structural phase transitions were observed at 6.8 GPa and 15.9 GPa respectively. The second phase transition was found to be reversible whereas the intermediate phase was retained on complete pressure release.
36 MATERIALS SCIENCE↗
Mixing Of Mode Symmetries In Top Gated Bilayer And Multilayer Graphene Field Effect Devices
We report Raman study to investigate the influence of stacking on the inversion symmetry breaking in top gated bi- and multi-layer ({approx}10 layers) graphene field effect transistors. The G phonon mode splits into a low frequency (G{sub low}) and a high frequency (G{sub high}) mode in bi- and multi-layer graphene and the two modes show different dependence on doping. The mode splitting is explained in terms of mixing of zone-center in-plane optical phonons representing in-phase and out-of-phase inter-layer atomic motions. Unlike in bilayer graphene, there is no transfer of intensity from G{sub low} to G{sub high} in multilayer graphene. A comparison is made for the bilayer graphene data with the recent theory of Gava et al. [Phys. Rev. B 80, 155422 (2009)].
36 MATERIALS SCIENCE↗
High-Pressure Studies on Synthetic Orthorhombic Cubanite (CuFe{sub 2}S{sub 3})
We report here the successful synthesis of orthorhombic cubanite using microwave heating and characterization for its orthorhombic phase by powder X-ray diffraction, Micro-Raman, Thermal and high pressure electrical resistivity measurements. The unique physico-chemical conditions prevent successful synthesis under laboratory conditions, however the mineral occurs in nature in its orthorhombic form. A distinct endothermic dip in Differential Thermal Analysis (DTA) at 280 deg. C is in agreement with the DTA data reported for natural cubanite. An irreversible first order phase transformation from orthorhombic to NiAs structure is seen at 4 GPa/200 deg. C. High pressure electrical resistivity and micro-Raman spectroscopic measurements on the synthetic sample exhibit transformation to isocubanite.
36 MATERIALS SCIENCE↗
Ethanol Sensitivity of Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) Nanoflakes
Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) nanoflakes were synthesized by a simple wet chemical method and X-Ray diffraction (XRD) result confirms the monoclinic structure of CuO with no secondary phases due to Sn doping. The scanning electron microscopic images indicate the formation of nanoflakes. The fundamental Raman modes were observed at 273, 318, 610, and 1084 cm{sup -1} for undoped CuO sample and theses modes were slightly shifted towards lower frequency side for Sn-doped samples, which indicates the inclusion of Sn in CuO. In addition, XRD and Raman studies infer the decrease of crystallinity in doped samples, which is reflected in the sensitivity towards ethanol. The ethanol sensitivity (resistivity measurement) increases with ethanol gas concentration and decreases with Sn-doping in CuO nanoflakes.
36 MATERIALS SCIENCE↗
Laser Fabricated Nanostructures on Vanadium Foils
In this work we present our results concerning to the nanostructure generation on vanadium surfaces by ultrashort pulsed laser irradiation. The melting free formation of these structures is very important in many fields of science and industry too. We obtain that the nanostructure forming process on vanadium surface is Stransky Krastanov type. The surface covering and the nano-tower shape are depending on the ambient of the laser matter reaction.
36 MATERIALS SCIENCE↗
New laser setup for the selective isotope production and investigation in a laser ion source at the IRIS (Investigation of Radioactive Isotopes on Synchrocyclotron) facility
New laser installation for the resonance ionization spectroscopy in a laser ion source and for rare isotope production has been recently put into operation at the IRIS (Investigation of Radioactive Isotopes on Synchrocyclotron) facility (Petersburg Nuclear Physics Institute, Gatchina). This is a significant improvement of a previous target-laser ion source device of the IRIS mass-separator, working on-line with 1 GeV proton beam of PNPI (Petersburg Nuclear Physics Institute) synchrocyclotron. It makes possible for us to get the isobarically clean radioactive isotope beams of a great number of chemical elements. New laser setup provides the two- or three-resonance step ionization in the range of wavelength of 265-850 nm. The first results obtained at the laser setup for Tl isotopes are presented.
07 ISOTOPE AND RADIATION SOURCES↗
High Cubic-Phase Purity InN on MgO (001) Using Cubic-Phase GaN as a Buffer Layer
High cubic-phase purity InN films were grown on MgO (001) substrates by molecular beam epitaxy with a cubic-phase GaN buffer layer. The cubic phase purity of the InN grown layers has been analyzed by high resolution X-ray diffraction, {mu}-Raman scattering and transmission electron microscopy. It is evidenced that the hexagonal-phase content in the InN overlayer much depends on hexagonal-phase content in the cubic-phase GaN buffer layer and increases with increasing the hexagonal-phase GaN content. From Raman scattering measurements, in addition, the InN layer with lowest hexagonal component (6%), only Raman characteristics of cubic TO{sub InN} and LO{sub InN} modes were observed, indicating a formation of a small amount of stacking faults, which does not affect on vibrational property.
36 MATERIALS SCIENCE↗
Initiation time of near-infrared laser-induced slip on the surface of silicon wafers
We have determined the initiation time of laser-induced slip on a silicon wafer surface subjected to a near-infrared continuous-wave laser by numerical simulations and experiments. First, numerical analysis was performed based on the heat transfer and thermoelasticity model to calculate the resolved shear stress and the temperature-dependent yield stress. Slip initiation time was predicted by finding the time at which the resolved shear stress reached the yield stress. Experimentally, the slip initiation time was measured by using a laser scattering technique that collects scattered light from the silicon wafer surface and detects strong scattering when the surface slip is initiated. The surface morphology of the silicon wafer surface after laser irradiation was also observed using an optical microscope to confirm the occurrence of slip. The measured slip initiation times agreed well with the numerical predictions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Argon metastable dynamics and lifetimes in a direct current microdischarge
In this paper we study the properties of a pulsed dc microdischarge with the continuous flow of argon. Argon metastable lifetimes are measured by tunable diode laser absorption spectroscopy (TDLAS) and are compared with calculated values which yield information about excitation and de-excitation processes. By increasing the gas flow-rate about 5 times from 10 to 50 sccm, the Ar{sup m} lifetime increases from 1 to 5 μs due to the reduction of metastable quenching with gas impurities. Optical emission spectroscopy reveals nitrogen and water molecules as the main gas impurities. The estimated N₂ density [N₂]=0.1% is too low to explain the measured metastable lifetimes. Water impurity was found to be the main de-excitation source of argon metastable atoms due to high quenching coefficients. The water impurity level of [H₂O]=0.15% to 1% is sufficient to bring calculated metastable lifetimes in line with experiments. The maximum value of water content in the discharge compared to the argon atoms is estimated to approximately 6%, due to the large surface to volume ratio of the microdischarge. The current pulse releases the water molecules from the electrode surface and they are either re-adsorbed in the time between 0.4 ms for [H₂O]=1% and 2.6 ms for [H₂O]=0.15% or pumped out of the discharge with the speed equal to the gas flow-rate. Depending on its partial pressure, the water impurity re-adsorption time is of the order of magnitude or less then the argon gas residence time.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
In search of the X{sub 2}BO and X{sub 2}BS (X = H, F) free radicals: Ab initio studies of their spectroscopic signatures
The F{sub 2}BO free radical is a known, although little studied, species but similar X{sub 2}BY (X = H, D, F; Y = O, S) molecules are largely unknown. High level ab initio methods have been used to predict the molecular structures, vibrational frequencies (in cm{sup −1}), and relative energies of the ground and first two excited electronic states of these free radicals, as an aid to their eventual spectroscopic identification. The chosen theoretical methods and basis sets were tested on F{sub 2}BO and found to give good agreement with the known experimental quantities. In particular, complete basis set extrapolations of coupled-cluster single and doubles with perturbative triple excitations/aug-cc-pVXZ (X = 3, 4, 5) energies gave excellent electronic term values, due to small changes in geometry between states and the lack of significant multireference character in the wavefunctions. The radicals are found to have planar C{sub 2v} geometries in the X{sup ~2}B{sub 2} ground state, the low-lying A{sup ~2}B{sub 1} first excited state, and the higher B{sup ~2}A{sub 1} state. Some of these radicals have very small ground state dipole moments hindering microwave measurements. Infrared studies in matrices or in the gas phase may be possible although the fundamentals of H{sub 2}BO and H{sub 2}BS are quite weak. The most promising method of identifying these species in the gas phase appears to be absorption or laser-induced fluorescence spectroscopy through the allowed B{sup ~}-X{sup ~} transitions which occur in the visible-near UV region of the electromagnetic spectrum. The ab initio results have been used to calculate the Franck-Condon profiles of the absorption and emission spectra, and the rotational structure of the B{sup ~}-X{sup ~}0{sub 0}{sup 0} bands has been simulated. The calculated single vibronic level emission spectra provide a unique, readily recognizable fingerprint of each particular radical, facilitating the experimental identification of new X{sub 2}BY species in the gas phase.
74 ATOMIC AND MOLECULAR PHYSICS↗
Two-dimensional profile measurement of plasma parameters in radio frequency-driven argon atmospheric pressure plasma jet
The two-dimensional profiles of the electron density, electron temperature, neutral translational temperature, and molecular rotational temperature are investigated in an argon atmospheric pressure plasma jet, which is driven by the radio frequency of 13.56 MHz by means of the laser scattering methods of Thomson, Rayleigh, and Raman. All measured parameters have maximum values at the center of the discharge and decrease toward the plasma edge. The results for the electron temperature profile are contrary to the results for the microwave-driven plasma. From our experimental results, the profiles of the plasma parameters arise from the radial contraction of plasmas and the time averaged profile of the electric field, which is obtained by a microwave simulation performed under identical conditions to the plasma jet. In the case of the neutral temperature, a higher translational temperature than the rotational temperature is measured, and its discrepancy is tentatively explained in terms of the low ion-neutral charge exchange rate and the additional degrees of freedom of the molecules. The description of our experimental results and the underlying physics are addressed in detail.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Quadrupole splittings in the near-infrared spectrum of 14 NH 3
Sub-Doppler, saturation dip, spectra of lines in the v 1 + v 3 , v 1 + 2v 4 and v 3 + 2v 4 bands of 14 NH 3 have been measured by frequency comb-referenced diode laser absorption spectroscopy. The observed spectral line widths are dominated by transit time broadening, and show resolved or partially-resolved hyperfine splittings that are primarily determined by the 14 N quadrupole coupling. Modeling of the observed line shapes based on the known hyperfine level structure of the ground state of the molecule shows that, in nearly all cases, the excited state level has hyperfine splittings similar to the same rotational level in the ground state. The data provide accurate frequencies for the line positions and easily separate lines overlapped in Doppler-limited spectra. The observed hyperfine splittings can be used to make and confirm rotational assignments and ground state combination differences obtained from the measured frequencies are comparable in accuracy to those obtained from conventional microwave spectroscopy. Furthermore, several of the measured transitions do not show the quadrupole hyperfine splittings expected based on their existing rotational assignments. Either the assignments are incorrect or the upper levels involved are perturbed in a way that affects the nuclear hyperfine structure.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Progress toward picosecond on-chip magnetic memory
Here, we offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin–orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet–ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ~3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin–orbit torque induced switching of a ferromagnet has been demonstrated using ~6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.
42 ENGINEERING↗
Initial transient stage of pin-to-pin nanosecond repetitively pulsed discharges in air
In this work, evolution of parameters of nanosecond repetitively pulsed (NRP) discharges in pin-to-pin configuration in air was studied during the transient stage of initial 20 discharge pulses. Gas and plasma parameters in the discharge gap were measured using coherent microwave scattering, optical emission spectroscopy, and laser Rayleigh scattering for NRP discharges at repetition frequencies of 1, 10, and 100 kHz. Memory effects (when perturbations induced by the previous discharge pulse would not decay fully until the subsequent pulse) were detected for the repetition frequencies of 10 and 100 kHz. For 10 kHz NRP discharge, the discharge parameters experienced significant change after the first pulse and continued to substantially fluctuate between subsequent pulses due to rapid evolution of gas density and temperature during the 100 μs inter-pulse time caused by intense redistribution of the flow field in the gap on that time scale. For 100 kHz NRP discharge, the discharge pulse parameters reached a new steady-state at about five pulses after initiation. Further, this new steady-state was associated with well-reproducible parameters between the discharge pulses and substantial reduction in breakdown voltage, discharge pulse energy, and electron number density in comparison to the first discharge pulse. For repetition frequencies 1–100 kHz considered in this work, the memory effects can be likely attributed to the reduction in gas number density and increase in the gas temperature that cannot fully recover to ambient conditions before subsequent discharge pulses.
42 ENGINEERING↗
Creation of color centers in diamond by recoil implantation through dielectric films
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Further, recent experiments have shown that this can be achieved by momentum transfer from a surface precursor via ion implantation, an approach known as “recoil implantation.” Here, we extend this technique to incorporate dielectric precursors for creating nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond. Specifically, we demonstrate that gallium focused-ion-beam exposure to a thin layer of silicon nitride or silicon dioxide on the diamond surface results in the introduction of both extrinsic impurities and carbon vacancies. These defects subsequently give rise to near-surface NV and SiV centers with desirable properties after annealing.
42 ENGINEERING↗