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At least 1,279 records · Page 71

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DOE OSTI2013

A 15GSa/s, 1.5GHz bandwidth waveform digitizing ASIC

The PSEC4 custom integrated circuit was designed for the recording of fast waveforms for use in large-area time-of-flight detector systems. The ASIC has been fabricated using the IBM-8RF 0.13 micron CMOS process. On each of 6 analog channels, PSEC4 employs a switched capacitor array (SCA) 256 samples deep, a ramp-compare ADC with 10.5 bits of DC dynamic range, and a serial data readout with the capability of region-of-interest windowing to reduce dead time. The sampling rate can be adjusted between 4 and 15 Gigasamples/second [GSa/s] on all channels and is servo-controlled on-chip with a low-jitter delay-locked loop (DLL). The input signals are passively coupled on-chip with a -3 dB analog bandwidth of 1.5 GHz. The power consumption in quiescent sampling mode is less than 50 mW/chip; at a sustained trigger and readout rate of 50 kHz the chip draws 100 mW. After fixed-pattern pedestal subtraction, the uncorrected integral non-linearity is 0.15% over an 750 mV dynamic range. With a linearity correction, a full 1 V signal voltage range is available.The sampling timebase has a fixed-pattern non-linearity with an RMS of 13%, which can be corrected for precision waveform feature extraction and timing.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2016

Poster - 01: LabPET II Pixelated APD-Based PET Scanner for High-Resolution Preclinical Imaging

Purpose: LabPET II is a new generation APD-based PET scanner designed to achieve sub-mm spatial resolution using truly pixelated detectors and highly integrated parallel front-end processing electronics. Methods: The basic element uses a 4×8 array of 1.12×1.12 mm{sup 2} Lu{sub 1.9}Y{sub 0.1}SiO{sub 5}:Ce (LYSO) scintillator pixels with one-to-one coupling to a 4×8 pixelated monolithic APD array mounted on a ceramic carrier. Four detector arrays are mounted on a daughter board carrying two flip-chip, 64-channel, mixed-signal, application-specific integrated circuits (ASIC) on the backside interfacing to two detector arrays each. Fully parallel signal processing was implemented in silico by encoding time and energy information using a dual-threshold Time-over-Threshold (ToT) scheme. The self-contained 128-channel detector module was designed as a generic component for ultra-high resolution PET imaging of small to medium-size animals. Results: Energy and timing performance were optimized by carefully setting ToT thresholds to minimize the noise/slope ratio. ToT spectra clearly show resolved 511 keV photopeak and Compton edge with ToT resolution well below 10%. After correction for nonlinear ToT response, energy resolution is typically 24±2% FWHM. Coincidence time resolution between opposing 128-channel modules is below 4 ns FWHM. Initial imaging results demonstrate that 0.8 mm hot spots of a Derenzo phantom can be resolved. Conclusion: A new generation PET scanner featuring truly pixelated detectors was developed and shown to achieve a spatial resolution approaching the physical limit of PET. Future plans are to integrate a small-bore dedicated mouse version of the scanner within a PET/CT platform.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

NASA NTRS1995

A Micromechanical INS/GPS System for Small Satellites

The cost and complexity of large satellite space missions continue to escalate. To reduce costs, more attention is being directed toward small lightweight satellites where future demand is expected to grow dramatically. Specifically, micromechanical inertial systems and microstrip global positioning system (GPS) antennas incorporating flip-chip bonding, application specific integrated circuits (ASIC) and MCM technologies will be required. Traditional microsatellite pointing systems do not employ active control. Many systems allow the satellite to point coarsely using gravity gradient, then attempt to maintain the image on the focal plane with fast-steering mirrors. Draper's approach is to actively control the line of sight pointing by utilizing on-board attitude determination with micromechanical inertial sensors and reaction wheel control actuators. Draper has developed commercial and tactical-grade micromechanical inertial sensors, The small size, low weight, and low cost of these gyroscopes and accelerometers enable systems previously impractical because of size and cost. Evolving micromechanical inertial sensors can be applied to closed-loop, active control of small satellites for micro-radian precision-pointing missions. An inertial reference feedback control loop can be used to determine attitude and line of sight jitter to provide error information to the controller for correction. At low frequencies, the error signal is provided by GPS. At higher frequencies, feedback is provided by the micromechanical gyros. This blending of sensors provides wide-band sensing from dc to operational frequencies. First order simulation has shown that the performance of existing micromechanical gyros, with integrated GPS, is feasible for a pointing mission of 10 micro-radians of jitter stability and approximately 1 milli-radian absolute error, for a satellite with 1 meter antenna separation. Improved performance micromechanical sensors currently under development will be suitable for a range of micro-nano-satellite applications.

Barbour, N.↗

DOE OSTI2024

Absorption and scattering limits of silicon nitride integrated photonics in the visible spectrum

Visible-light photonic integrated circuits (PICs) promise scalability for technologies such as quantum information, biosensing, and scanning displays, yet extending large-scale silicon photonics to shorter wavelengths has been challenging due to the higher losses. Silicon nitride (SiN) has stood out as the leading platform for visible photonics, but the propagation losses strongly depend on the film’s deposition and fabrication processes. Current loss measurement techniques cannot accurately distinguish between absorption and surface scattering, making it difficult to identify the dominant loss source and reach the platform’s fundamental limit. Here we demonstrate an ultra-low loss, high-confinement SiN platform that approaches the limits of absorption and scattering across the visible spectrum. Leveraging the sensitivity of microresonators to loss, we probe and discriminate each loss contribution with unparalleled sensitivity, and derive their fundamental limits and scaling laws as a function of wavelength, film properties and waveguide parameters. Through the design of the waveguide cross-section, we show how to approach the absorption limit of the platform, and demonstrate the lowest propagation losses in high-confinement SiN to date across the visible spectrum. We envision that our techniques for loss characterization and minimization will contribute to the development of large-scale, dense PICs that redefine the loss limits of integrated platforms across the electromagnetic spectrum.

Corato-Zanarella, Mateus (ORCID:0000000327318046)↗

NASA NTRS1994

Multi-speed multi-phase resolver converter

A multiphase converter circuit generates a plurality of sinusoidal outputs of displaced phase and given speed value from the output of an angular resolver system attachable to a motor excited by these multi-phase outputs, the resolver system having a lower speed value than that of the motor. The angular resolver system provides in parallel format sequential digital numbers indicative of the amount of rotation of the shaft of an angular position sensor associated with the angular resolver system. These numbers are used to excite simultaneously identical addresses of a plurality of addressable memory systems, each memory system having stored therein at sequential addresses sequential values of a sinusoidal wavetrain of a given number of sinusoids. The stored wavetrain values represent sinusoids displaced from each other in phase according to the number of output phases desired. A digital-to-analog converter associated with each memory system converts each accessed word to a corresponding analog value to generate attendant to rotation of the angular resolver a sinusoidal wave of proper phase at each of the plurality of outputs. By properly orienting the angular resolver system with respect to the rotor of the motor, essentially ripple-free torque is supplied to the rotor. The angular resolver system may employ an analog resolver feeding an integrated circuit resolver-to-digital converter to produce the requisite digital values serving as addresses. Alternative versions employing incremental or absolute encoders are also described.

Alhorn, Dean↗

NASA NTRS1995

Multi-speed multi-phase resolver converter

Alhorn, Dean C.↗

NASA NTRS1995

Ka-Band MMIC Subarray Technology Program (Ka-Mist)

Ka-band monolithic microwave integrated circuit (MMIC) arrays have been considered as having high potential for increasing the capability of space, aircraft, and land mobile communication systems in terms of scan performance, data rate, link margin, and flexibility while offering a significant reduction in size, weight, and power consumption. Insertion of MMIC technology into antenna systems, particularly at millimeter wave frequencies using low power and low noise amplifiers in closed proximity to the radiating elements, offers a significant improvement in the array transmit efficiency, receive system noise figure, and overall array reliability. Application of active array technology also leads to the use of advanced beamforming techniques that can improve beam agility, diversity, and adaptivity to complex signal environments. The objective of this program was to demonstrate the technical feasibility of the 'tile' array packaging architecture at EHF via the insertion of 1990 MMIC technology into a functional tile array or subarray module. The means test of this objective was to demonstrate and deliver to NASA a minimum of two 4 x 4 (16 radiating element) subarray modules operating in a transmit mode at 29.6 GHz. Available (1990) MMIC technology was chosen to focus the program effort on the novel interconnect schemes and packaging requirements rather than focusing on MMIC development. Major technical achievements of this program include the successful integration of two 4 x 4 subarray modules into a single antenna array. This 32 element array demonstrates a transmit EIRP of over 300 watts yielding an effective directive power gain in excess of 55 dB at 29.63 GHz. The array has been actively used as the transmit link in airborne/terrestrial mobile communication experiments accomplished via the ACTS satellite launched in August 1993.

Pottinger, W.↗

DOE OSTI2020

Fabrication of field-effect transistors with transfer-free nanostructured carbon as semiconducting channel material

Carbon nanostructures as active channel material in field effect transistors (FETs) are appealing in microelectronics for their improved performance such as high speed and low energy dissipation. However, these devices require the incorporation of nanostructure transfer steps in the fabrication process flow, which makes difficult its application in large scale integration circuits. Here we present a novel method for the fabrication of FETs with nanostructured carbon in the channel with p-type semiconducting properties and intermediate drain-source current (IDS) on/off ratio. The method is based on the use of Ni nanoparticles in the source-drain gap region as seed material for the formation of carbon nanostructures in the FET channel. FETs without Ni nanoparticles in the channel showed no modulation of IDS as a function of gate voltage. The device fabrication process does not require any carbon nanostructure transfer steps since it directly forms carbon nanostructures electrically connected to the device's source and drain electrodes via electron-beam evaporation of carbon and conventional lithographic processes. Since all device fabrication steps are compatible with Si technology processes, they are capable of being further optimized following process development protocols practiced by the semiconductor industry.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS2010

Electrically Variable Resistive Memory Devices

Nonvolatile electronic memory devices that store data in the form of electrical- resistance values, and memory circuits based on such devices, have been invented. These devices and circuits exploit an electrically-variable-resistance phenomenon that occurs in thin films of certain oxides that exhibit the colossal magnetoresistive (CMR) effect. It is worth emphasizing that, as stated in the immediately preceding article, these devices function at room temperature and do not depend on externally applied magnetic fields. A device of this type is basically a thin film resistor: it consists of a thin film of a CMR material located between, and in contact with, two electrical conductors. The application of a short-duration, low-voltage current pulse via the terminals changes the electrical resistance of the film. The amount of the change in resistance depends on the size of the pulse. The direction of change (increase or decrease of resistance) depends on the polarity of the pulse. Hence, a datum can be written (or a prior datum overwritten) in the memory device by applying a pulse of size and polarity tailored to set the resistance at a value that represents a specific numerical value. To read the datum, one applies a smaller pulse - one that is large enough to enable accurate measurement of resistance, but small enough so as not to change the resistance. In writing, the resistance can be set to any value within the dynamic range of the CMR film. Typically, the value would be one of several discrete resistance values that represent logic levels or digits. Because the number of levels can exceed 2, a memory device of this type is not limited to binary data. Like other memory devices, devices of this type can be incorporated into a memory integrated circuit by laying them out on a substrate in rows and columns, along with row and column conductors for electrically addressing them individually or collectively.

Liu, Shangqing↗

DOE OSTI2018

Basic Research Needs for Microelectronics

Since the invention of the integrated circuit in 1958, advances in microelectronics have followed Moore’s law and other scaling laws. These have led to over a billion-fold increase in the number of transistors on a chip. The Department of Energy’s Office of Science (DOE-SC) programs have always been at the cutting edge of microelectronics, making major contributions to the scientific understanding, materials, and advanced instrumentation that enabled innovations to promote scaling. This has driven transformative advances in microelectronics for the challenging demands of DOE’s high performance computing and science facilities. Now, strong evidence exists that scaling is approaching its physical and economic limits, and yet, the growth of data-centric computing and sensor networks is redefining computing workloads and microelectronics needs. In addition, greatly improved microelectronics are needed for the nation’s electricity grid if it is to be energy-efficient, resilient to natural phenomena and intentional attack, and agile in adapting to fluctuations in demand and power generation. Sustained and rapid progress in microelectronics science and technology from millivolt to megavolt scales is thus essential if we are to continue pushing the boundaries of science within DOE, and more significantly, to continue to lead the global information and power technology revolution. In October 2018, DOE-SC convened a workshop to address Basic Research Needs for Microelectronics by a “co-design” approach. Participants focused on scientific issues associated with advanced microelectronics technologies for applications relevant to the DOE mission, including computing, power grid management, and science facility workloads. (Topics of direct relevance to quantum information science and quantum computing were outside the scope of this workshop.) The workshop was organized around microelectronics needs for three areas: 1) future DOE-SC facilities, 2) high performance computing beyond exascale (a billion billion calculations per second), and 3) power control, conversion, and detection for a modernized electrical grid and related high power applications. Panels were formed around each of these areas, with a fourth panel formed to address Crosscutting Research. Workshop participants were asked to focus on a co-design innovation ecosystem in which materials, chemistries, devices, systems, architectures, algorithms, and software are researched and developed in a closely integrated fashion, with feedback and interdisciplinary collaboration at each interface in this microelectronics technology hierarchy. The panels identified the five Priority Research Directions on the following page.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Wide-field microwave magnetic field imaging with nitrogen-vacancy centers in diamond

Non-invasive imaging of microwave (MW) magnetic fields with microscale lateral resolution is pivotal for various applications, such as MW technologies and integrated circuit failure analysis. Diamond nitrogen-vacancy (NV) center magnetometry has emerged as an ideal tool, offering micrometer-scale resolution, millimeter-scale field of view, high sensitivity, and non-invasive imaging compatible with diverse samples. However, up until now, it has been predominantly used for imaging of static or low-frequency magnetic fields or, concerning MW field imaging, to directly characterize the same microwave device used to drive the NV spin transitions. In this work, we leverage an NV center ensemble in diamond for wide-field imaging of MW magnetic fields generated by a test device employing a differential measurement protocol. The microscope is equipped with a MW loop to induce Rabi oscillations between NV spin states, and the MW field from the device-under-test is measured through local deviations in the Rabi frequency. This differential protocol yields magnetic field maps of a 2.57 GHz MW field with a sensitivity of ∼9 μT Hz −1/2 for a total measurement duration of T=357 s, covering a 340 × 340 μm 2 field of view with a micrometer-scale spatial resolution and a device-under-test input power dynamic range of 30 dB. This work demonstrates a novel NV magnetometry protocol, based on differential Rabi frequency measurement, that extends NV wide-field imaging capabilities to imaging of weak MW magnetic fields that would be difficult to measure directly through standard NV Rabi magnetometry.

crystallographic defects↗

DOE OSTI2014

Ultraprecise phase manipulation in integrated photonic quantum circuits with generalized directional couplers

We present an innovative approach for ultra-precise phase manipulation in integrated photonic quantum circuits. To this end, we employ generalized directional couplers that utilize a detuning of the propagation constant in optical waveguides by the overlap of adjacent waveguide modes. We demonstrate our findings in experiments with classical as well as quantum light.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Unraveling the Highly Plastic Behavior of ALD-Aluminum Oxide Encapsulations by Small-Scale Tensile Testing

We present a study directly measuring the electron-beam-induced plasticity of amorphous Al 2 O 3 coatings. Core–shell nanostructures are employed as small-scale model systems for two-dimensional coatings made by atomic layer deposition (ALD). Copper nanowires (NWs) are used as substrates for ALD deposition, representing a model system for interconnects commonly found in integrated circuits. Experiments are performed in situ in a transmission electron microscope (TEM) and further analyzed with electron energy loss spectroscopy (EELS). Our in situ TEM tensile experiments reveal the highly plastic behavior of the ALD shell, which withstands a maximum strain of 188%. Comparable samples under beam-off conditions show a brittle fracture, which underlines the effect of electron irradiation. The electron-beam-activated bond switching within the amorphous network enables compensation of the applied tensile strain, leading to viscous flow. By incorporating an intermediate nanocrystalline layer within the Al 2 O 3 shell, the plasticity is suppressed and brittle fracture occurs. This work directly demonstrates the tuning of mechanical properties in amorphous ALD structures through electron irradiation.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Parallel stitching of 2D materials

Diverse parallel stitched 2D heterostructures, including metal–semiconductor, semiconductor–semiconductor, and insulator–semiconductor, are synthesized directly through selective “sowing” of aromatic molecules as the seeds in the chemical vapor deposition (CVD) method. Lastly, the methodology enables the large-scale fabrication of lateral heterostructures, which offers tremendous potential for its application in integrated circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2018

Improved Performance of Zinc Oxide Thin Film Transistor Pressure Sensors and a Demonstration of a Commercial Chip Compatibility with the New Force Sensing Technology

Abstract A zinc oxide thin film transistor is developed and optimized that simultaneously functions as a transistor and a force sensor, thus allowing for scalable integration of sensors into arrays without the need for additional addressing elements. Through systematic material deposition, microscopy, and piezoelectric characterization, it is determined that an O 2 rich deposition condition improves the transistor performance and pressure sensing characteristics. With these optimizations, a sensitivity of 4 nA kPa −1 and a latency of below 1 ms are achieved, exceeding the criteria for successful commercialization of arrayed pressure sensors. The functionality of 16 × 16 pressure sensor arrays on thin bendable glass substrates for integrated low weight and flexible touchscreen displays is fabricated and demonstrated and read‐out electronics to interface with the arrays and to record their response in real‐time are developed. Finally, the application of these sensors for mobile displays via their operation with an existing commercial touch integrated circuit controller is demonstrated.

Vishniakou, Siarhei↗

DOE OSTI2020

The Concept of Negative Capacitance in Ionically Conductive Van der Waals Ferroelectrics

Negative capacitance (NC) provides a path to overcome the Boltzmann limit that dictates operating voltages in transistors and, therefore, may open up a path to the challenging proposition of lowering energy consumption and waste heat in nanoelectronic integrated circuits. Typically, NC effects in ferroelectric materials are based on either stabilizing a zero-polarization state or slowing down ferroelectric switching in order to access NC regimes of the free-energy distribution. Here, a fundamentally different mechanism for NC, based on CuInP 2 S 6 , a van der Waals layered ferrielectric, is demonstrated. Using density functional theory and piezo-response force microscopy, it is shown that an unusual combination of high Cu-ion mobility and its crucial role in determining polarization magnitude and orientation (P) leads to a negative slope of the polarization versus the electric field E, dP/dE < 0, which is a requirement for NC. This mechanism for NC is likely to occur in a wide class of materials, offering new possibilities for NC-based devices. Finally, the nanoscale demonstration of this mechanism can be extended to the device-level by increasing the regions of homogeneous polarization and polarization switching, for example, through strain engineering and carefully selected electric field pulses.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Length‐Independent Charge Transport in Chimeric Molecular Wires

Abstract Advanced molecular electronic components remain vital for the next generation of miniaturized integrated circuits. Thus, much research effort has been devoted to the discovery of lossless molecular wires, for which the charge transport rate or conductivity is not attenuated with length in the tunneling regime. Herein, we report the synthesis and electrochemical interrogation of DNA‐like molecular wires. We determine that the rate of electron transfer through these constructs is independent of their length and propose a plausible mechanism to explain our findings. The reported approach holds relevance for the development of high‐performance molecular electronic components and the fundamental study of charge transport phenomena in organic semiconductors.

Wardrip, Austin G.↗

DOE OSTI2016

Length‐Independent Charge Transport in Chimeric Molecular Wires

Wardrip, Austin G.↗