SEARCH · Engineering Papers

Results for “FURNACE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,279 records · Page 71

All sources NASA NTRS DOE OSTI

NASA NTRS1979

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.

Trotter, J. D.↗

NASA NTRS1980

Comparative evaluation of insulating properties of plasma-sprayed ceramic coatings

A simple method for evaluating the thermal insulating capability of ceramic coatings was devised. It is based on monitoring the temperature of the uncoated back surface of a thin superalloy disk while its front surface, coated with the ceramic material, is exposed to the high-temperature environment of an electric muffle furnace. The results obtained indicate that zirconia containing 8 wt% Y2O3 is a better thermal insulator than barium zirconate or calcium orthosilicate.

Zaplatynsky, I.↗

NASA NTRS1980

Development of processes for the production of low cost silicon dendritic web for solar cells

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Duncan, C. S.↗

NASA NTRS1980

A silicon sheet casting experiment

The casting of silicon blanks for solar cells directly without slicing is an exciting concept. An experiment was performed to investigate the feasibility of developing a machine that casts wafers directly. A Czochralski furnace was modified to accept a graphite ingot-simulating fixture. Silicon was melted in the middle of the ingot simulator in a boron nitride mold. Sample castings showed reasonable crystal size. Solar cells were made from the cast blanks. The performance is reported.

Bickler, D. B.↗

NASA NTRS1980

Silicon solar cells with high open-circuit voltage

Open-circuit voltages as high as 0.645 V (AM0-25 C) have been obtained by a new process developed for low-resistivity silicon. The method utilizes high-dose phosphorus implantation, followed by furnace annealing and simultaneous oxide growth to form high-efficiency, shallow junctions. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient AR coating. Boron doped silicon with resistivities from 0.1 to 0.3 ohm-cm has been processed according to this sequence; results show highest open-circuit voltage is attained with 0.1-ohm-cm starting material. The effects of bandgap narrowing, caused by high doping concentrations in the junction, were also investigated by implanting phosphorus over a wide range of dose levels.

Minnucci, J. A.↗

NASA NTRS1980

Low-cost conversion of polycrystalline silicon into sheet by HEM and FAST

The conversion of polycrystalline silicon to sheet form (the wafers produced are 10 cm x 10 cm cross section with minimum surface damage) by the Heat Exchanger Method (HEM) and multi-wire Fixed Abrasive Slicing Technique (FAST), as a means of reducing the cost of solar arrays for adaptation of photovoltaic technology for terrestrial applications, is given. A schematic of a HEM furnace, which includes a silica crucible, and developments in the HEM process are presented. A new machine for slicing with wire was designed and fabricated. The high-speed slicer has been used to slice 19 wafers per cm from 10 cm diameter crystals. Both HEM and FAST are low-cost processes and they have the potential of giving one of the lowest add-on costs ($6.24 and $6.48 per square meter of sheet respectively, with the combination add-on cost of $14.87 per square meter) of this conversion.

Khattak, C. P.↗

NASA NTRS1980

Low-cost ion implantation and annealing technology for solar cells

Ion implantation and thermal annealing techniques for processing junctions and back surface layers in solar cells are discussed. Standard 10 keV (31)p(+) junction implants and 25 keV (11)B(+) back surface implants in combination with three-step furnace annealing are used for processing a range of silicon materials and device structures. Cells with efficiencies up to 16.5% AM1 are being produced, and large-area terrestrial cells with implanted junctions and back fields being fabricated in pilot production exhibit average efficiencies in excess of 15% AM1. Thermal annealing methods for removal of the radiation damage caused by implantation should be replaced by transient processing techniques in future production. Design studies have been completed for solar cell processing implanters to support 10 MW/yr and 100 MW/yr production lines, and analyses indicate that implantation costs can be reduced to approximately 1 cent/watt.

Kirkpatrick, A. H.↗

NASA NTRS1981

Degradation of a two-layer thermal barrier coating under thermal cycling

A two-layer plasma-sprayed thermal barrier coating on a directionally solidified nickel-base eutectic alloy substrate was characterized prior to and after thermal cycling to 1095 C in an accelerated furnace test. The coating was comprised of an inner layer of Ni-16.4Cr-5.1Al-0.15Y (wt%) bond coat and an outer layer of ZrO2-7.9Y2O3 (wt%) thermal barrier. Characterization of the bond coat revealed that substantial amounts of yttrium and aluminum were oxidized during plasma-spraying in air. The oxidation of these elements reduced the protective capacity of the bond coat so that, on thermal exposure, severe degradation of the bond coat resulted and large amounts of nickel oxide formed. This nickel oxide was demonstrated to grow outward into the thermal barrier, which appears to have increased the stresses in the thermal barrier and contributed to its failure near the thermal barrier-bond coat interface.

Maier, R. D.↗

NASA NTRS1982

Measuring Hydrogen Properties in Aluminum

System in use at Langley Research Center measures concentration and diffusion coefficient of hydrogen in pure aluminum. Principal components are high-temperature ultra-high-vacuum furnace and quadrupole mass spectrometer. Quantities of hydrogen and other gases that evolve from heated metal are measured in real time and correlated with data on aluminum porosity.

Outlaw, R. A.↗

NASA NTRS1982

Reflective-Shield Radiative Cooler

Tests show radiative cooler consisting of several thin reflective shields with a slight angle between them redirects flow of heat very effectively. Shield can be used for deflecting virtually any level of thermal radiation can be deflected by technique; but it may be useful in construction reflecting baffles in front of ovens or furnaces.

Petrick, W.↗

NASA NTRS1982

Separating Silicon From Si/NaF Mixtures

New method of extracting silicon from mixture produced when silicon tetrafluoride is reduced by sodium takes advantage of lower melting point of NaF. Method is effective at temperatures up to 400 degrees C below melting point of Si. Results in energy and economic savings: simpler and smaller furnaces, less volatization loss, and high percentage of separation.

Sanjurjo, A.↗

NASA NTRS1983

Ampoule With Integral Feedthroughs

Bridgman-growth ampoule has molybdenum-to-quartz feedthroughs at both ends. Ampoule is vacuum-tight, protects exposed areas of furnace from corrosive vapors emanating from sample and at same time prevents changes in composition of melt due to preferential vaporization of one of components.

Crouch, R. K.↗

NASA NTRS1983

High Temperature Filler for Tile Gaps

Gaps between ceramic tiles filled with ceramic-coated fabric that withstands temperatures as high as 2,000 degrees F (1,300 degrees C). Reusable high-temperature gap filler is made of fabric coated with ceramic slurry and bonded in place with room-temperature-vulcanized adhesive. Procedure used in kilns and furnaces.

Holt, J. W.↗

NASA NTRS1981

Space processing of electronic materials

The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

Workman, G. L.↗

NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗

NASA NTRS1980

Transient and diffusion analysis of Hg Cd Te

The solution of the one dimensional planar interface solidification problem is presented. Numerical solutions are applied to experimental solute profiles to determine the effective diffusion constant for Hg Co Te. Progress on the design and construction of a high gradient furnace is reported.

Clayton, J. C.↗

NASA NTRS1981

Development of an all-metal thick film cost effective metallization system for solar cells

The objectives of the investigation were to provide all-metal screenable pastes using economical base metals, suitable for application to low-to-high conductivity silicon of either conductivity type and possibly to aluminum surfaces. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium, intended to provide transport during the carbon fluoride decomposition was incorporated in the paste with promising results.

Ross, B.↗

NASA NTRS1981

Solar heated fluidized bed gasification system

A solar-powered fluidized bed gasification system for gasifying carbonaceous material is presented. The system includes a solar gasifier which is heated by fluidizing gas and steam. Energy to heat the gas and steam is supplied by a high heat capacity refractory honeycomb which surrounds the fluid bed reactor zone. The high heat capacity refractory honeycomb is heated by solar energy focused on the honeycomb by solar concentrator through solar window. The fluid bed reaction zone is also heated directly and uniformly by thermal contact of the high heat capacity ceramic honeycomb with the walls of the fluidized bed reactor. Provisions are also made for recovering and recycling catalysts used in the gasification process. Back-up furnace is provided for start-up procedures and for supplying heat to the fluid bed reaction zone when adequate supplies of solar energy are not available.

Qader, S. A.↗