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At least 1,261 records · Page 70

Structure and Interface Design Enable Stable Li-Rich Cathode

Li-rich layered-oxide cathodes have the highest theoretical energy density among all the intercalated cathodes, which have attracted intense interests for high energy Li-ion batteries. However, O3-structured layered-oxide cathodes suffer from a low initial Coulombic efficiency (CE), severe voltage fade, and poor cycling stability because of the continuous oxygen release, structural rearrangements due to irreversible transition-metal migration, and serious side reactions between the delithiated cathode and electrolyte. In this work, we report that these challenges are migrated by using a stable O2-structured Li 1.2 Ni 0.13 Co 0.13 Mn 0.54 O 2 (O2-LR-NCM) and all-fluorinated electrolyte. The O2-LR-NCM can restrict the transition metals migrating into the Li layer and the in situ formed fluorinated cathode electrolyte interphase (CEI) on the surface of the O2-LR-NCM from the decomposition of all-fluorinated electrolyte during initial cycles effectively restrains the structure transition, suppresses the O2 release, and thereby safeguards the transition metal redox couples, enabling a highly reversible and stable oxygen redox reaction. O2-LR-NCM in all fluorinated electrolytes achieves a high initial CE of 99.82 % and cycling CE of and cycling CE of >99.9%, high reversible capacity of 278 mAh/g, and high capacity retention of 83.3% after 100 cycles. The synergic design of electrolyte and cathode structure represents a promising direction to stabilize high-energy cathodes.

25 ENERGY STORAGE↗

In Situ Localized Polysulfide Injector for the Activation of Bulk Lithium Sulfide

The activation of commercial Li 2 S remains to be one of the key challenges against its commercialization as a starting cathode material for a sulfur-based Li-ion battery system. In this work we take advantage of the lower oxidation potential of commercial Na 2 S (1–3 wt%) to serve as an in situ and local polysulfide injector for the activation of commercial Li 2 S (70 wt%). Furthermore, in contrast to applying pre-solvated redox mediators, this technique allows for the activation of commercial Li 2 S at lower voltages with an electrolyte content as low as 3 μL mg –1 Li 2 S at 3 mgmg Li 2 S cm –2 and 4 μL mg –1 Li 2 S at 6.5 mg Li 2 S cm –2 without any other material modification.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Phase controlled synthesis of transition metal carbide nanocrystals by ultrafast flash Joule heating

Nanoscale carbides enhance ultra-strong ceramics and show activity as high-performance catalysts. Traditional lengthy carburization methods for carbide syntheses usually result in coked surface, large particle size, and uncontrolled phase. Here, a flash Joule heating process is developed for ultrafast synthesis of carbide nanocrystals within 1 s. Various interstitial transition metal carbides (TiC, ZrC, HfC, VC, NbC, TaC, Cr 2 C 3 , MoC, and W 2 C) and covalent carbides (B 4 C and SiC) are produced using low-cost precursors. By controlling pulse voltages, phase-pure molybdenum carbides including β-Mo 2 C and metastable α-MoC 1-x and η-MoC 1-x are selectively synthesized, demonstrating the excellent phase engineering ability of the flash Joule heating by broadly tunable energy input that can exceed 3000 K coupled with kinetically controlled ultrafast cooling (>10 4 K s –1 ). Theoretical calculation reveals carbon vacancies as the driving factor for topotactic transition of carbide phases. The phase-dependent hydrogen evolution capability of molybdenum carbides is investigated with β-Mo 2 C showing the best performance.

01 COAL, LIGNITE, AND PEAT↗

Enhanced charge carrier extraction and transport with interface modification for efficient tin-based perovskite solar cells

Interface modification improves charge carrier extraction in tin-based perovskite solar cells. Tin-based perovskites have become the most promising non-lead perovskites due to their ideal band gap and low toxicity. Although the open circuit voltage of tin-based perovskite solar cells (TPSCs) continues to approach the theoretical value, the short-circuit current is still far from the theoretical value. Here, we describe an interface modification method by regulating the property of hole transport layer, PEDOT:PSS, which improves the surface molecular morphology and the energy level alignment of PEDOT:PSS/perovskite interface. Advanced GIWAXS and IR s-SNOM characterization are conducted to achieve multi-dimensional characterization of nanoscale surface morphology and chemical distribution of PEDOT:PSS. With the multi-attribute optimization, charge carrier extraction and non-radiative recombination are also improved. The resultant TPSCs exhibit a higher power conversion efficiency of 13.32% in compared with the control device of 10.50%, accompanied with an increase in the short-circuit current from 18.10 to 20.50 mA cm −2 and FF from 68.23% to 76.43%. This work demonstrates a reliable strategy for improving charge carrier extraction and device performance for lead-free TPSCs.

Zhao, Zhenzhu↗

Effect of diffusion constant on the morphology of dendrite growth in lithium metal batteries

Lithium dendrites can lead to a short circuit and battery failure, and developing strategies for their suppression is of considerable importance. In this work, we study the growth of dendrites in a simple model system where the solvent is a continuum and the lithium ions are hard spheres that can deposit by sticking to existing spheres or the electrode surface. Using stochastic dynamics simulations, we investigate the effect of applied voltage and diffusion constant on the growth of dendrites. We find that the diffusion constant is the most significant factor, and the inhomogeneity of the electric field does not play a significant role. Additionally, the growth is most pronounced when the applied voltage and diffusion constant are both low. We observe a structural change from broccoli to cauliflower shape as the diffusion constant is increased. The simulations suggest that a control of electrolyte parameters that impact lithium diffusion might be an attractive route to controlling dendrite growth.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗

Void-free Copper Electrodeposition in High Aspect Ratio, Full Wafer Thickness Through-Silicon Vias with Endpoint Detection

High density interconnects are required for increased input/output for microelectronics applications, incentivizing the development of Cu electrochemical deposition (ECD) processes for high aspect ratio through-silicon vias (TSVs). This work outlines Cu ECD processes for 62.5 μ m diameter TSVs, etched into a 625 μ m thick silicon substrate, a 10:1 aspect ratio. Cu ECD in high aspect ratio features relies on a delicate balance of electrolyte composition, solution replenishment, and applied voltage. Implementing a CuSO 4 -H 2 SO 4 electrolyte, which contains suppressor and a low chloride concentration, allows for a tunable relationship between applied voltage and localized deposition in the vias. A stepped potential waveform was applied to move the Cu growth front from the bottom of the via to the top. Sample characterization was performed through mechanical cross-sections and X-ray computed tomography (CT) scans. The CT scans revealed small seam voids in the Cu electrodeposit, and process parameters were tuned accordingly to produce void-free Cu features. During the voltage-controlled experiments, measured current data showed a characteristic current minimum, which was identified as an endpoint detection method for Cu deposition in these vias. We believe this is the first report of this novel endpoint detection method for TSV filling.

42 ENGINEERING↗

STC Qualification Tests of PIP-II HB650 Cavities

Design of the high beta 650 MHz prototype cryomodule for PIP-II is currently undergoing at Fermilab. The cryomodule includes six 5-cell elliptical SRF cavities with accelerating voltage up to 20 MV and low heat dissipation (Q₀ > 3.3 · 10^{z}EhNZeHn). Characterization of performance of fully integrated jacketed cavities with high power coupler and tuner is crucial for the project. Such a characterization of jacketed cavity requires a horizontal test cryostat. The Fermilab Spoke Test Cryostat (STC) has been upgraded to accommodate testing of 650 MHz cavities. Commissioning of upgraded STC has been reported at SRF’19 conference. In this paper we present results of testing of the prototype HB650 cavity in upgraded STC facility. We characterize cavity performance and qualify it for the prototype HB650 cryomodule assembly.

43 PARTICLE ACCELERATORS↗

LGAD Single Event Burnout Studies

We report on simulation of single event burnout of low gain avalanche diodes during high voltage operation after irradiation. A model is described which can be used to estimate energy deposition needed for single event burnout and the dependence of burnout on thermal conductivity and thermal resistance to heat sinks.

74 ATOMIC AND MOLECULAR PHYSICS↗

Vehicle Technologies Program: Energy Storage R&D (2008 Annual Progress Report)

One of the primary objectives of the Energy Storage effort is the development of durable and affordable advanced batteries (and ultracapacitors) for use in a full range of vehicle applications, from start/stop to full-power HEVs, EVs, and PHEVs. The battery technology development activity spans three areas: system development of full battery systems; benchmark testing of emerging technologies in order to remain abreast of the latest industry developments; and Small Business Innovative Research (SBIR) to fund early-stage R&D for small businesses/entrepreneurs.

25 ENERGY STORAGE↗

A miniature high voltage plasma interaction flight experiment - Project MINX

A miniature high-voltage array was fabricated, incorporating the multi-junction edge illuminated (MJC) cell technique. The array consists of 32 2x2.2 cm MJCs, series connected, capable of 1600 V open circuit at 1 AMO and 1.2 mA short circuit. A solid state, high-voltage relay is connected across each 4-cell subgroup of the array. It was built to test plasma current drain on space systems using high voltage as might occur when a high-voltage solar array is operated from low to synchronous orbit.

Riley, T. J.↗

Precise matching of diodes

Two circuit arrangements using ac and dc power source provide low-cost method for matching forward voltage drops of diodes and other semiconductors. Both circuits are simpler and less expensive than conventional, characteristic-curve tracers.

Mclyman, W. T.↗

Gas Control System for HEAO-B

The HEAO-B Gas Control System consists of a high pressure gas storage supply together with distribution and regulation assemblies and their associated electronics for management of gas required for HEAO-B X-ray counter experiments. The Gas Control System replenishes a gas mixture (82 percent argon, 12.3 percent carbon dioxide, 5.7 percent xenon) in the counter volumes which is lost by: diffusion through controlled leakage plugs, diffusion through counter windows, and consumption resulting from periodic purges. The gas density in each counter volume is maintained constant to within 0.25 percent by comparison with a sealed reference volume. The system is fully redundant, capable of operating at atmospheric pressure as well as in a vacuum, contains interlocks which shut down gas flow in the event of either leakage or excessive pressure, and is able to shut down counter high voltage if counter pressure is abnormally low. The system is electronically controlled by ground command and self-sustaining in orbit for a period of at least one year.

Taylor, B.↗

Reversal of nickel cadmium cells

The design of nickel cadmium cells are discussed. The pressure voltage profiles of these cells during low rate reversal are also summarized.

Badcock, C.↗

Performance storage, safety and disposal of Li/SO2 cells

Cell performance characteristics after storage at room temperature and 71 C as well as some cell failure modes are evaluated. The performance of cells at low temperatures (-30 C) even into voltage reversal is also considered. The correlation of Li/SO2 coulombic ratio with generated free cyanide (CN-) in forced discharged D cells is also included.

Dimasi, G. J.↗

A study of universal modulation techniques applied to satellite data collection

A universal modulation and frequency control system for use with data collection platform (DCP) transmitters is examined. The final design discussed can, under software/firmwave control, generate all of the specific digital data modulation formats currently used in the NASA satellite data collection service and can simultaneously synthesize the proper RF carrier frequencies employed. A novel technique for DCP time and frequency control is presented. The emissions of NBS radio station WWV/WWVH are received, detected, and finally decoded in microcomputer software to generate a highly accurate time base for the platform; with the assistance of external hardware, the microcomputer also directs the recalibration of all DCP oscillators to achieve very high frequency accuracies and low drift rates versus temperature, supply voltage, and time. The final programmable DCP design also employs direct microcomputer control of data reduction, formatting, transmitter switching, and system power management.

Source record↗

Spacecraft Environmental Interactions Technology, 1983

State of the art of environment interactions dealing with low-Earth-orbit plasmas; high-voltage systems; spacecraft charging; materials effects; and direction of future programs are contained in over 50 papers.

Source record↗

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Lieneweg, U.↗