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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by DC magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistance significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectroscopy, and determinations of surface conductivity types are used to investigate the configuration of the ITO/InP cells. It is concluded that thesee latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗
NASA NTRS1989

Parallel Optical Random Access Memory (PORAM)

It is shown that the need to minimize component count, power and size, and to maximize packing density require a parallel optical random access memory to be designed in a two-level hierarchy: a modular level and an interconnect level. Three module designs are proposed, in the order of research and development requirements. The first uses state-of-the-art components, including individually addressed laser diode arrays, acousto-optic (AO) deflectors and magneto-optic (MO) storage medium, aimed at moderate size, moderate power, and high packing density. The next design level uses an electron-trapping (ET) medium to reduce optical power requirements. The third design uses a beam-steering grating surface emitter (GSE) array to reduce size further and minimize the number of components.

Alphonse, G. A.↗
NASA NTRS1989

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Meier, D. L.↗
NASA NTRS1989

Approaches toward a blue semiconductor laser

Possible approaches for obtaining semiconductor diode laser action in the blue region of the spectrum are surveyed. A discussion of diode lasers is included along with a review of the current status of visible emitters, presently limited to 670 nm. Methods are discussed for shifting laser emission toward shorter wavelengths, including the use of II-IV materials, the increase in the bandgap of III-V materials by addition of nitrogen, and changing the bandstructure from indirect to direct by incorporating interstitial atoms or by constructing superlattices. Non-pn-junction injection methods are surveyed, including avalanche breakdown, Langmuir-Blodgett diodes, heterostructures, carrier accumulation, and Berglund diodes. Prospects of inventing new multinary semiconducting materials are discussed, and a number of novel materials described in the literature are tabulated. New approaches available through the development of quantum wells and superlattices are described, including resonant tunneling and the synthesis of arbitrary bandgap materials through multiple quantum wells.

Ladany, I.↗
NASA NTRS1988

The design of radiation-hardened ICs for space - A compendium of approaches

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ISs.

Kerns, Sherra E.↗
NASA NTRS1988

Relative dating of Hawaiian lava flows using multispectral thermal infrared images - A new tool for geologic mapping of young volcanic terranes

The weathering of Hawaiian basalts in arid and semiarid environments is accompanied by changes in their thermal infrared emittance spectra. The spectral differences can be measured and mapped with multispectral imaging systems. The differences appear to be related to the degree of development, preservation, and alteration of glassy crusts; the oxidation of iron; and the accretion of silica-rich surface veneers. Because the measurements are quantitative and in image format, they are useful for estimating relative ages in geologic mapping of lava flows. In Hawaii this technique is most diagnostic for distinguishing among sparsely vegetated flows less than 1.5 ka in age.

Kahle, Anne B.↗
NASA NTRS1988

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Malik, R. J.↗
NASA NTRS1989

Radiative cooling performance of a converging liquid drop radiator

The liquid drop radiator consists of many directed streams of hot liquid drops that are cooled by passing through space and are then collected for reuse. To facilitate the collection of the cooled liquid, a converging geometry might be useful. As the streams converge toward the collector, the density and optical thickness of the droplet cloud are increased. The increase of optical thickness in the flow direction is shown to reduce the local emittance along the length of the radiator.

Siegel, Robert↗
NASA NTRS1988

Comparison of the degradation effects of heavy ion, electron, and cobalt-60 irradiation in an advanced bipolar process

Experimental measurements are reported of the degradation effects of high-energy particles (heavy Br ions and electrons) and Co-60 gamma-rays on the current gain of minimum-geometry bipolar transistors made from an advanced process. The data clearly illustrate the total-ionizing-dose vs particle-fluence behavior of this bipolar transistor produced by an advanced process. In particular, bulk damage from Co-60 gamma rays in bipolar transistors (base transport factor degradation) and surface damage in bipolar transistors from ionizing radiation (emitter-efficiency degradation) have been observed. The true equivalence between various types of radiation for this process technology has been determined on the basis of damage from the log K1 intercepts.

Zoutendyk, John A.↗
NASA NTRS1989

Gamma-ray burster counterparts - Radio

Many observers and theorists have suggested that gamma-ray bursters (GRBs) are related to highly magnetized rotating, neutron stars, in which case an analogy with pulsars implies that GRBs would be prodigious emitters of polarized radio emission during quiescence. The paper reports on a survey conducted with the Very Large Array radio telescope of 10 small GRB error regions for quiescent radio emission at wavelengths of 2, 6, and 20 cm. The sensitivity of the survey varied from 0.1 to 0.8 mJy. The observations did indeed reveal four radio sources inside the GRB error regions.

Schaefer, Bradley E.↗
NASA NTRS1989

Thin film coatings for space electrical power system applications

This paper examines some of the ways in which thin film coatings can play a role in aerospace applications. Space systems discussed include photovoltaic and solar dynamic electric power generation systems, including applications in environmental protection, thermal energy storage, and radiator emittance enhancement. Potential applications of diamondlike films to both atmospheric and space based systems are examined. Also, potential uses of thin films of the recently discovered high-temperature superconductive materials are discussed.

Gulino, Daniel A.↗
NASA NTRS1990

Gamma radiation from the Crab and Vela pulsars

The young pulsars in Crab and Vela were observed as very efficient emitters of high energy gamma radiation. While their radiation in the radio, optical, and x ray range was always known to differ considerably, the gamma ray emission on a superficial level appears quite similar: lightcurves with two narrow peaks, separated by 141 deg (Crab) and 153 deg (Vela) and photon energies in excess of 1 GeV with spectra that can be described by a power-law for Crab and a broken power-law for Vela. The detailed observations of these sources with the COS-B instrument, extending over nearly seven years, have revealed significant differences in the characteristics of the pulsars in the gamma-ray domain. Secular changes in the temporal (Crab) and spectral (Vela) properties above 50 MeV were found. These tantalizing signatures of the pulsar emission processes must now be explored in more detail and over a larger spectral range with the GRO (Gamma Ray Observatory) instruments in order to gain a deeper understanding of the physics of young neutron stars.

Kanbach, Gottfried↗
NASA NTRS1989

Reflection oscillators employing series resonant crystals'

A reflection oscillator is provided which employs an active device operated in its roll-off region and two resonant circuits. For an oscillator employing a bipolar transistor, the emitter is connected to a series resonant capacitor-crystal network and the base is connected to an L-C tank circuit with the transistor being operated in the roll-off region of its gain versus frequency curve. This will provide a very high frequency of operation with a relatively inexpensive, low frequency, active device. These oscillators are easily tuned, stable, and require little dc power.

Kleinberg, Leonard L.↗
NASA NTRS1990

Multiwavelength pyrometry to correct for reflected radiation

Computer curve fitting is used in multiwavelength pyrometry to measure the temperature of a surface in the presence of reflected radiation by decomposing its radiation spectrum. Computer-simulated spectra (at a surface temperature of 1000 K; in the wavelength region 0.3 to 20 microns; with a reflected radiation-source temperature of 700 to 2500 K; and reflector emissivity from 0.1 to 0.9) were generated and decomposed. This method of pyrometry determined the surface temperatures under these conditions to within 5 percent. The practicability of the method was further demonstrated by the successful analysis of a related problem--decomposition of the real spectrum of an infrared source containing two emitters to determine their temperatures.

Ng, Daniel L. P.↗
NASA NTRS1989

The 27-28 October 1986 FIRE IFO Cirrus case study: Comparison of radiative transfer theory with observations by satellite and aircraft

Observations of cirrus and altocumulus clouds during the First International Satellite Cloud Climatology Project Regional Experiment (FIRE) are compared to theoretical models of cloud radiative properties. Three tests are performed. First, LANDSAT radiances are used to compare the relationship between nadir reflectance ot 0.83 micron and beam emittance at 11.5 microns with that predicted for model calculations using spherical and nonspherical phase functions. Good agreement is found between observations and theory when water droplets dominate. Poor agreement is found when ice particles dominate, especially using scattering phase functions for spherical particles. Even when compared to a laboratory measured ice particle phase function, the observations show increased side scattered radiation relative to the theoretical calculations. Second, the anisotropy of conservatively scattered radiation is examined using simultaneous multiple angle views of the cirrus from LANDSAT and ER-2 aircraft radiometers. Observed anisotropy gives good agreement with theoretical calculations using the laboratory measured ice particle phase function and poor agreement with a spherical particle phase function. Third, Landsat radiances at 0.83, 1.65, and 2.21 microns are used to infer particle phase and particle size. For water droplets, good agreement is found with King Air FSSP particle probe measurements in the cloud. For ice particles, the LANDSAT radiance observations predict an effective radius of 60 microns versus aircraft observations of about 200 microns. It is suggested that this descrepancy may be explained by uncertainty in the imaginary index of ice and by inadequate measurements of small ice particles by microphysical probes.

Wielicki, Bruce A.↗
NASA NTRS1990

Interpretation of cirrus cloud properties using coincident satellite and lidar data during the FIRE cirrus IFO

The First ISCCP Regional Experiment (FIRE) Cirrus Intensive Field Observations (IFO) provide an opportunity to examine the relationships between the satellite observed radiances and various parameters which describe the bulk properties of clouds, such as cloud amount and cloud top height. Lidar derived cloud altitude data, radiosonde data, and satellite observed radiances are used to examine the relationships between visible reflectance, infrared emittance, and cloud top temperatures for cirrus clouds.

Minnis, Patrick↗
NASA NTRS1988

Improvements in InP solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.

Keavney, Christopher↗
NASA NTRS1988

Radiation resistance and comparative performance of ITO/InP and n/p InP homojunction solar cells

The radiation resistance of ITO/InP cells processed by dc magnetron sputtering is compared to that of standard n/p InP and GaAs homojunction cells. After 20 MeV proton irradiations, it is found that the radiation resistance of the present ITO/InP cell is comparable to that of the n/p homojunction InP cell and that both InP cell types have radiation resistances significantly greater than GaAs. The relatively lower radiation resistance, observed at higher fluence, for the InP cell with the deepest junction depth, is attributed to losses in the cells emitter region. Diode parameters obtained from I sub sc - V sub oc plots, data from surface Raman spectrosocpy, and determinations of surface conductivity type are used to investigate the configuration of the ITO/InP cells. It is concluded that these latter cells are n/p homojunctions, the n-region consisting of a disordered layer at the oxide semiconductor.

Weinberg, I.↗