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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Magnetism and electronic structure of YTiO{sub 3} thin films

High-quality (001)-oriented (pseudo-cubic notation) ferromagnetic YTiO{sub 3} thin films were epitaxially synthesized in a layer-by-layer way by pulsed laser deposition. Structural, magnetic, and electronic properties were characterized by reflection-high-energy-electron-diffraction, X-ray diffraction, vibrating sample magnetometry, and element-resolved resonant soft X-ray absorption spectroscopy. To reveal ferromagnetism of the constituent titanium ions, X-ray magnetic circular dichroism spectroscopy was carried out using four detection modes probing complementary spatial scale, which overcomes a challenge of probing ferromagnetic titanium with pure Ti{sup 3+}(3d{sup 1}). Our work provides a pathway to distinguish between the roles of titanium and A-site magnetic rare-earth cations in determining the magnetism in rare-earth titanates thin films and heterostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Origin of fine oscillations in the photoluminescence spectrum of 2-dimensional electron gas formed in AlGaN/GaN high electron mobility transistor structures

An unambiguous identification of the fine oscillations observed in the low temperature photoluminescence (PL) spectra of AlGaN/GaN based high electron mobility transistor (HEMT) structures is carried out. In literature, such oscillations have been erroneously identified as the sub-levels of 2-dimensional electron gas (2DEG) formed at AlGaN/GaN heterointerface. Here, the origin of these oscillations is probed by performing the angle dependent PL and reflectivity measurements under identical conditions. Contrary to the reports available in literature, we find that the fine oscillations are not related to 2DEG sub-levels. The optical characteristics of these oscillations are mainly governed by an interference phenomenon. In particular, peculiar temperature dependent redshift and excitation intensity dependent blueshift, which have been interpreted as the characteristics of 2DEG sub-levels in HEMT structures by other researchers, are understood by invoking the wavelength and temperature dependence of the refractive index of GaN within the framework of interference phenomenon. The results of other researchers are also consistently explained by considering the fine oscillatory features as the interference oscillations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electron temperature measurements inside the ablating plasma of gas-filled hohlraums at the National Ignition Facility

The first measurement of the electron temperature (T{sub e}) inside a National Ignition Facility hohlraum is obtained using temporally resolved K-shell X-ray spectroscopy of a mid-Z tracer dot. Both isoelectronic- and interstage-line ratios are used to calculate the local T{sub e} via the collisional–radiative atomic physics code SCRAM [Hansen et al., High Energy Density Phys 3, 109 (2007)]. The trajectory of the mid-Z dot as it is ablated from the capsule surface and moves toward the laser entrance hole (LEH) is measured using side-on x-ray imaging, characterizing the plasma flow of the ablating capsule. Data show that the measured dot location is farther away from the LEH in comparison to the radiation-hydrodynamics simulation prediction using HYDRA [Marinak et al., Phys. Plasmas 3, 2070 (1996)]. To account for this discrepancy, the predicted simulation T{sub e} is evaluated at the measured dot trajectory. The peak T{sub e}, measured to be 4.2 keV ± 0.2 keV, is ∼0.5 keV hotter than the simulation prediction.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

A liquid jet setup for x-ray scattering experiments on complex liquids at free-electron laser sources

In this paper we describe a setup for x-ray scattering experiments on complex fluids using a liquid jet. The setup supports Small and Wide Angle X-ray Scattering (SAXS/WAXS) geometries. The jet is formed by a gas-dynamic virtual nozzle (GDVN) allowing for diameters ranging between 1 μm and 20 μm at a jet length of several hundred μm. To control jet properties such as jet length, diameter, or flow rate, the instrument is equipped with several diagnostic tools. Three microscopes are installed to quantify jet dimensions and stability in situ. The setup has been used at several beamlines performing both SAXS and WAXS experiments. As a typical example we show an experiment on a colloidal dispersion in a liquid jet at the X-ray Correlation Spectroscopy instrument at the Linac Coherent Light Source free-electron laser.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

The drastic enhancement of backscattered electrons (BSE) yield from nanostructured thin metal film which exceeded well the one from massive metal was observed at accelerating voltages below 400 V. The dependences of BSE signal from nanostructured gold film on accelerating voltage and on retarding grid potential applied to BSE detector were investigated. It was shown that enhanced BSE signal was formed by inelastic scattered electrons coming from the gaps between nanoparticles. A tentative explanation of the mechanism of BSE signal enhancement was suggested.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

An AlN/Al 0.85 Ga 0.15 N high electron mobility transistor

An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al 0.85 Ga 0.15 N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810 V was achieved without a gate insulator or field plate. Excellent gate leakage characteristics enabled a high I on /I off current ratio greater than 10 7 and an excellent subthreshold slope of 75 mV/decade. A large Schottky barrier height of 1.74 eV contributed to these results. In conclusion, the room temperature voltage-dependent 3-terminal off-state drain current was adequately modeled with Frenkel-Poole emission.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Plasma electron hole kinematics. II. Hole tracking Particle-In-Cell simulation

The kinematics of a 1-D electron hole is studied using a novel Particle-In-Cell simulation code. A hole tracking technique enables us to follow the trajectory of a fast-moving solitary hole and study quantitatively hole acceleration and coupling to ions. We observe a transient at the initial stage of hole formation when the hole accelerates to several times the cold-ion sound speed. Artificially imposing slow ion speed changes on a fully formed hole causes its velocity to change even when the ion stream speed in the hole frame greatly exceeds the ion thermal speed, so there are no reflected ions. The behavior that we observe in numerical simulations agrees very well with our analytic theory of hole momentum conservation and the effects of “jetting.”.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Calibration of the OHREX high-resolution imaging crystal spectrometer at the Livermore electron beam ion traps

We report the calibration of the Orion High-Resolution X-ray (OHREX) imaging crystal spectrometer at the EBIT-I electron beam ion trap at Livermore. Two such instruments, dubbed OHREX-1 and OHREX-2, are fielded for plasma diagnostics at the Orion laser facility in the United Kingdom. The OHREX spectrometer can simultaneously house two spherically bent crystals with a radius of curvature of r = 67.2 cm. The focusing properties of the spectrometer allow both for larger distance to the source due to the increase in collected light and for observation of extended sources. OHREX is designed to cover a 2.5°–3° spectral range at Bragg angles around 51.3°. The typically high resolving powers at these large Bragg angles are ideally suited for line shape diagnostics. For instance, the nominal resolving power of the instrument (>10 000) is much higher than the effective resolving power associated with the Doppler broadening due to the temperature of the trapped ions in EBIT-I. The effective resolving power is only around 3000 at typical EBIT-I conditions, which nevertheless is sufficient to set up and test the instrument’s spectral characteristics. We have calibrated the spectral range for a number of crystals using well known reference lines in the first and second order and derived the ion temperatures from these lines. We have also made use of the 50 μm size of the EBIT-I source width to characterize the spatial focusing of the spectrometer.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Recent Developments in the General Atomic and Molecular Electronic Structure System

A discussion of many of the recently implemented features of GAMESS (General Atomic and Molecular Electronic Structure System) and LibCChem (the C++ CPU/GPU library associated with GAMESS) is presented. These features include fragmentation methods like the fragment molecular orbital, effective fragment potential and effective fragment molecular orbital methods, hybrid MPI/OpenMP approaches to Hartree-Fock and resolution of the identity second order perturbation theory. Many new coupled cluster theory methods have been implemented in GAMESS, as have multiple levels of density functional/tight binding theory. The role of accelerators, especially graphical processing units, is discussed in the context of the new features of LibCChem, as is the associated problem of power consumption as the power of computers increases dramatically. The process by which a complex program suite like GAMESS is maintained and developed is considered. Future developments are briefly summarized.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

Detecting electron neutrinos from solar dark matter annihilation by JUNO

We explore the electron neutrino signals from light dark matter (DM) annihilation in the Sun for the large liquid scintillator detector JUNO. In terms of the spectrum features of three typical DM annihilation channels χχ→νν-bar,τ{sup +}τ{sup −},bb-bar, we take two sets of selection conditions to calculate the expected signals and atmospheric neutrino backgrounds based on the Monte Carlo simulation data. Then the JUNO sensitivities to the spin independent DM-nucleon and spin dependent DM-proton cross sections are presented. It is found that the JUNO projected sensitivities are much better than the current spin dependent direct detection experimental limits for the νν-bar and τ{sup +}τ{sup −} channels. In the spin independent case, the JUNO will give the better sensitivity to the DM-nucleon cross section than the LUX and CDMSlite limits for the νν-bar channel with the DM mass lighter than 6.5 GeV. If the νν-bar or τ{sup +}τ{sup −} channel is dominant, the future JUNO results are very helpful for us to understand the tension between the DAMA annual modulation signal and other direct detection exclusions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Femtosecond Electronic and Hydrogen Structural Dynamics in Ammonia Imaged with Ultrafast Electron Diffraction

Directly imaging structural dynamics involving hydrogen atoms by ultrafast diffraction methods is complicated by their low scattering cross-sections. Here we demonstrate that megaelectronvolt ultrafast electron diffraction is sufficiently sensitive to follow hydrogen dynamics in isolated molecules. In a study of the photodissociation of gas phase ammonia, we simultaneously observe signatures of the nuclear and corresponding electronic structure changes resulting from the dissociation dynamics in the time-dependent diffraction. Both assignments are confirmed by ab initio simulations of the photochemical dynamics and the resulting diffraction observable. While the temporal resolution of the experiment is insufficient to resolve the dissociation in time, our results here represent an important step towards the observation of proton dynamics in real space and time.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Passive Two-Phase Cooling of Automotive Power Electronics: Preprint

Experiments were conducted to evaluate the use of a passive two-phase cooling strategy as a means of cooling automotive power electronics. The proposed cooling approach utilizes an indirect cooling configuration to alleviate some reliability concerns and to allow the use of conventional power modules. An inverter-scale proof-of-concept cooling system was fabricated, and tests were conducted using the refrigerants hydrofluoroolefin HFO-1234yf and hydrofluorocarbon HFC-245fa. Results demonstrated that the system can dissipate at least 3.5 kW of heat with 250 cm3 of HFC-245fa. An advanced evaporator design that incorporates features to improve performance and reduce size was conceived. Simulation results indicate its thermal resistance can be 37% to 48% lower than automotive dual side cooled power modules. Tests were also conducted to measure the thermal performance of two air-cooled condensers--plain and rifled finned tube designs. The results combined with some analysis were then used to estimate the required condenser size per operating conditions and maximum allowable system (i.e., vapor and liquid) temperatures.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2014

Evolution of the 4f electron localization from YbRh{sub 2}Si{sub 2} to YbRh{sub 2}Pb studied by electron spin resonance

We report on electron spin resonance (ESR) experiments on the Heusler alloy YbRh{sub 2}Pb and compare its spin dynamics with that of several other Yb-based intermetallics. A detailed analysis of the derived ESR parameters indicates the extremely weak hybridization, more localized distribution of the 4f states, and a smaller RKKY interaction in YbRh{sub 2}Pb. These findings reveal the important interplay between hybridization effects, chemical substitution, and crystalline electric field interactions that determines the ground state properties of strongly correlated electron systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Ribbon electron beam formation by a forevacuum plasma electron source

Results of the numerical analysis and experimental research on ribbon electron beam generation based on hollow cathode discharge at forevacuum gas pressure are presented. Geometry of the accelerating gap has modified. It lets us focus the ribbon electron beam and to transport it on a distance of several tens of centimeters in the absence of an axial magnetic field. The results of numerical simulations are confirmed by the experiment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Suppression of electron magnetotunneling between parallel two-dimensional GaAs/InAs electron systems by the correlation interaction

Magnetotunneling between two-dimensional GaAs/InAs electron systems in vertical resonant tunneling GaAs/InAs/AlAs heterostructures is studied. A new-type of singularity in the tunneling density of states, specifically a dip at the Fermi level, is found; this feature is drastically different from that observed previously for the case of tunneling between two-dimensional GaAs tunnel systems in terms of both the kind of functional dependence and the energy and temperature parameters. As before, this effect manifests itself in the suppression of resonant tunneling in a narrow range near zero bias voltage in a high magnetic field parallel to the current direction. Magnetic-field and temperature dependences of the effect's parameters are obtained; these dependences are compared with available theoretical and experimental data. The observed effect can be caused by a high degree of disorder in two-dimensional correlated electron systems as a result of the introduction of structurally imperfect strained InAs layers.

36 MATERIALS SCIENCE↗