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Results for “electrical resistivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
NASA NTRS1966

Multilayer ohmic contacts on CdS.

Multilayer technique for evaporation of ohmic contacts onto CdS, noting V-I characteristics and noise spectrum of recrystallized layer

VOLT-AMPERE CHARACTERISTICS↗
NASA NTRS1971

Standard reference materials: Thermal conductivity of electrolytic iron, SRM 734, from 4 to 300 K

Thermal conductivity data were obtained by the axial one-dimensional heat flow method for a cylindrical rod 3.6 mm in diameter and 23 cm long with an electric heater at one end and a temperature controlled sink at the other. Variability of this iron was studied by means of electrical residual resistivity ratio measurements on 63 specimens. This study showed that with a two-hour anneal at 1000 C one can obtain a thermal conductivity Standard Reference Material that has variability of less than 1% in thermal conductivity.

Hust, J. G.↗
NASA NTRS1975

Cadmium stannate selective optical films for solar energy applications

Efforts concentrated on reducing the electrical sheet resistance of sputtered cadmium stannate films, installing and testing equipment for spray coating experiments, and sputter deposition of thin cadmium sulfide layers onto cadmium stannate electrodes. In addition, single crystal silicon wafers were coated with cadmium stannate. Work also continued on the development of the backwall CdS solar cell.

Haacke, G.↗
NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗
NASA NTRS1983

New method of determining the onset of ring cracking

A technique is developed for the detection of the onset of circumferential ring cracks in a flat brittle piece of an electrically insulating material. Thin metal films were deposited on both the insulating indentor (diamond) and the insulating brittle flat. The initiation of a ring crack was signified by a step in the monitored electrical contact resistance between the indentor and flat metal films versus the applied force. It was determined by tests performed on polished glass slides using diamond indentors that this technique is both sensitive and reproducible. The onset of crack formation as observed by optical means was found to occur at the same time as the step in the contact resistance when both experiments were carried out simultaneously.

Grzybowski, T. A.↗
NASA NTRS1984

Synthesis of tin-containing polyimide films

A series of tin-containing polyimide films derived from either 3,3',4,4'-benzophenone tetracarboxylic acid dianhydride or pyromellitic dianhydride and 4,4'-oxydianiline have been synthesized and their electrical properties examined. Highest quality materials (i.e., homogeneous, smooth surface, flexible) with the best electrical properties were doped with either SnCl2.2H2O or (n-Bu)2SnCl2. In all cases, extensive reactivity of the tin dopant with water, air or polyamic acid during imidization is observed. Lowered electrical surface resistivities appear to be correlatable with the presence of surface tin oxide on the film surface.

Ezzell, S. A.↗