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At least 1,261 records · Page 70

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DOE OSTI2021

SiC and GaN Devices With Cryogenic Cooling

This article presents the cryogenically cooled application for wide bandgap (WBG) semiconductor devices. Characteristics of silicon carbide (SiC) and gallium nitride (GaN) at cryogenic temperatures are illustrated. SiC MOSFETs exhibit increased on-state resistance and slower switching speed at cryogenic temperatures. However, cryogenic cooling provides low ambient temperature environment and thus enables the SiC converter to operate at lower junction temperature to achieve higher efficiency compared to room temperature cooling. A cryogenically cooled MW-level SiC inverter prototype is developed and demonstrated the feasibility of operating high-power SiC converter with cryogenic cooling. GaN HEMTs exhibit more than five times on-state resistance reduction and faster switching speed at cryogenic temperatures which makes GaN HEMTs an excellent candidate for cryogenic power electronics applications. The significantly reduced on-state resistance of GaN devices provides the possibility to operate them at a current level much higher than rated current at cryogenic temperatures. A GaN double pulse test (DPT) circuit is constructed and demonstrated that GaN HEMTs can operate at nearly four times of rated current at cryogenic temperatures. Challenges of utilizing WBG device with cryogenic cooling are discussed and summarized.

42 ENGINEERING↗

DOE OSTI2022

Controlled Formation of Conduction Channels in Memristive Devices Observed by X–ray Multimodal Imaging

Neuromorphic computing provides a means for achieving faster and more energy efficient computations than conventional digital computers for artificial intelligence (AI). However, its current accuracy is generally less than the dominant software-based AI. The key to improving accuracy is to reduce the intrinsic randomness of memristive devices, emulating synapses in the brain for neuromorphic computing. Here using a planar device as a model system, the controlled formation of conduction channels is achieved with high oxygen vacancy concentrations through the design of sharp protrusions in the electrode gap, as observed by X-ray multimodal imaging of both oxygen stoichiometry and crystallinity. Classical molecular dynamics simulations confirm that the controlled formation of conduction channels arises from confinement of the electric field, yielding a reproducible spatial distribution of oxygen vacancies across switching cycles. Furthermore, this work demonstrates an effective route to control the otherwise random electroforming process by electrode design, facilitating the development of more accurate memristive devices for neuromorphic computing.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Design-to-Device Approach Affords Panchromatic Co-sensitized Solar Cells

Data–driven materials discovery has become increasingly important in identifying materials that exhibit specific, desirable properties from a vast chemical search space. Synergic prediction and experimental validation are needed to accelerate scientific advances related to critical societal applications. A design–to–device study that uses high–throughput screens with algorithmic encodings of structure–property relationships is reported to identify new materials with panchromatic optical absorption, whose photovoltaic device applications are then experimentally verified. The data–mining methods source 9431 dye candidates, which are auto–generated from the literature using a custom text–mining tool. These candidates are sifted via a data–mining workflow that is tailored to identify optimal combinations of organic dyes that have complementary optical absorption properties such that they can harvest all available sunlight when acting as co–sensitizers for dye–sensitized solar cells (DSSCs). Six promising dye combinations are shortlisted for device testing, whereupon one dye combination yields co–sensitized DSSCs with power conversion efficiencies comparable to those of the high–performance, organometallic dye, N719. Here, these results demonstrate how data–driven molecular engineering can accelerate materials discovery for panchromatic photovoltaic or other applications.

14 SOLAR ENERGY↗

DOE OSTI2018

Optimal design of a model energy conversion device

Fuel cells, batteries, and thermochemical and other energy conversion devices involve the transport of a number of (electro-) chemical species through distinct materials so that they can meet and react at specified multi-material interfaces. Therefore, morphology or arrangement of these different materials can be critical in the performance of an energy conversion device. In this paper, we study a model problem motivated by a solar-driven thermochemical conversion device that splits water into hydrogen and oxygen. We formulate the problem as a system of coupled multi-material reaction-diffusion equations where each species diffuses selectively through a given material and where the reaction occurs at multi-material interfaces. In conclusion, we introduce a phase-field formulation of the optimal design problem and numerically study selected examples.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2018

Physical Reasoning to Synchronize Electrical Signals and Related Diagnostics in Plasma Focus Devices

Plasma Focus (PF) devices as well as other similar pulsed discharge devices requires a variety of diagnostics for their proper control and optimization, including the voltage between electrodes, the time derivative of the discharge current, detection of X-rays and neutron emissions, and pulsed laser images (Shadow, Schlieren, interferograms). This article discusses the problem of the time reference of all these outputs and proposes specific techniques for synchronizing them based on sound physical grounds. The foundations of synchronization criterion are verified in several experiments on PF devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2018

Detection of Delayed Neutrons from Fissionable Samples: Monte Carlo Modelling and Physical Assumptions for a Design of the DET-12 Device

An activation of fissionable materials with neutrons has been considered as a possible neutron diagnostic of D–D and D–T fusion plasma. Fission reaction caused by fusion neutrons leads up to emission of secondary neutrons: prompt and delayed. Physical assumptions have been outlined to design a new device (DET-12) for measurements of delayed neutrons emitted from samples of fissionable materials activated with neutrons at big fusion-plasma devices. The aim is to support a classic neutron activation method used as one of plasma diagnostics at tokamaks or stellarators. An interpretation of the time decay of delayed neutrons enables an assessment of the primary neutron flux which induced fission reaction. Monte Carlo calculations have been carried out in order to elaborate the method considered. Nuclides like: pure {sup 235}U, {sup 238}U and {sup 232}Th, have been selected as possible materials to be irradiated. Physical fundamentals of generation of the delayed neutrons are mentioned and a resulting concept of the DET-12 device, built in the Institute of Nuclear Physics, Poland, is presented. A general size and dimensions of particular constituent material layers, and a number and placement of neutron detectors are optimized by means of Monte Carlo modelling. Recommendations for a technical design of the measuring chamber were formulated. Detection efficiency of DET-12 has been also estimated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2018

Improvements in the electroless deposition of Ag nanowires in hot ethylene glycol for resistive touchscreen device

Highlights: • High quality Ag nanowires prepared by an improved electroless deposition process in hot ethylene glycol. • Increase in nanowire length due to the sonication of AgNO{sub 3}/EG solution and salt addition. • Resistive touchscreen device fabrication using Ag nanowire transparent conducting electrodes. - Abstract: We report several approaches to improve the quality of silver (Ag) nanowires synthesized by electroless deposition in hot ethylene glycol (polyol). Ultralong Ag nanowires with lengths up to 50 μm and about 60 nm in mean diameter were prepared using CuCl{sub 2} as stabilizer. Without CuCl{sub 2}, mostly large Ag particles were produced due to oxidative etching of multiply-twinned Ag seeds. Sonication of the AgNO{sub 3}/EG solution prior to injection resulted in longer and thinner nanowires. Without these pretreatments, low aspect ratio Ag nanowires mixed with nanoparticles were produced. The Ag nanowire transparent conducting electrode attained a low sheet resistance of 57.4 Ω/sq and high optical transmittance of 90%. A resistive touch screen device with a microcontroller was fabricated to prove the viability of Ag nanowire electrode for optoelectronic device applications. The Ag nanowire electrodes exhibited a resistive characteristic, which varied depending on the point of contact on the touch screen.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2025

Integrating HPC simulations and physical experiments to characterize the effects of gamma radiation on seismic protective devices

Seismic protective systems, composed of seismic isolators and dampers, can substantially reduce the effects of earthquake shaking on nuclear power plants and components therein. To enable the use of these devices to protect equipment inside a plant and close to a source of radiation, the U.S. Department of Energy (DOE) funded a project at the Idaho National Laboratory (INL) and the University at Buffalo to characterize the effects of absorbed gamma dose on their mechanical properties. An early task in the project was to determine the exposure time required in the INL Foss Therapy Services (FTS) 60 Co gamma irradiator to achieve a target absorbed dose in the materials used to construct isolators and dampers, including fluids, polymers, composites, and metals. This task required the novel integration of high-performance computing (HPC), Monte Carlo N-Particle (MCNP) simulations, and irradiation experiments using Fricke dosimetry. An MCNP model of the FTS irradiator at INL was developed and validated using Fricke dosimetry. Simulations of three experiments in the irradiator, two with Fricke vials only and one with Fricke vials and a large-size isolator, predicted the Fricke-measured absorbed dose rate to within 15% in all three cases, providing high confidence in the calculation of the gamma dose absorbed in the materials comprising the seismic protective devices. The simulations demonstrated that the effects of photon scattering on absorbed dose rate in the FTS irradiator are negligible for test articles installed close to the cobalt sources and near the rear of the irradiator. The validated MCNP model of the FTS irradiator is being used to support ongoing DOE-funded experiments on seismic protective devices and could be applied to future, non-seismic-related experiments. In conclusion, the novel validation process successfully deployed for the FTS irradiator at INL could be applied to other irradiators, requiring new MCNP models and simulations, and irradiation experiments using dosimeters.

42 - ENGINEERING↗

DOE OSTI2022

Dramatic effect of electrode type on tunnel junction based molecular spintronic devices

A new class of molecular spintronic devices can be fabricated by chemically bonding magnetic molecular channels to the electrodes of a prefabricated tunnel junction with exposed side edges. Prior experimental studies showed that the cyanide-bridged octametallic molecular cluster, [(pzTp)FeIII(CN)3]4[NiII(L)]4¬[O3SCF3]4 [(pzTp) = tetra(pyrazol-1-yl)borate; L = 1-S(acetyl)tris(pyrazolyl)decane] molecule impact depended on the type of metallic electrodes used in the tunnel junction testbed. Experimental magnetization and transport studies showed a dramatic difference in molecule response on tunnel junctions with different combinations of metallic electrodes. Transport via paramagnetic molecular channels on a tunnel junction involving paramagnetic and ferromagnetic metal electrodes was dramatically different than the suppressed current state observed on tunnel junctions involving two ferromagnetic electrodes. We conducted theoretical studies to understand the experimental data and explore a wide range of electrode materials on tunnel junction-based molecular spintronics devices (TJMSD). Here, we report a Monte Carlo simulation study that focuses on understanding the effect of electrodes on the magnetic and physical properties of TJMSD. A 3D Heisenberg model of cross-junction-shaped TJMSD was used for the simulation study. We studied the effects of ferromagnetic, paramagnetic, and antiferromagnetic electrode materials. This study provides insights for designing and understanding futuristic molecular spintronics devices.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Effects of gamma, electron beam, and X-ray irradiation on the plastic components of a universal bone cement mixer medical device

Due to market and regulatory pressures, many healthcare manufacturers are considering alternatives to cobalt-60 gamma radiation, including accelerator-based electron beam (E-beam) and X-ray radiation for product sterilization. In this work, the effects of irradiation on a representative medical product, comprised of eight distinct polymer materials, were directly compared for three radiation technologies – cobalt-60 gamma, E-beam, and X-ray – at four dose levels (15, 25, 50, and 70 kGy). The objective was to determine how radiation effects (deleterious or beneficial) are influenced by source and dose level, with the specific goal of determining whether E-beam radiation and/or X-ray radiation could be viable alternatives to gamma radiation for device sterilization. Here, the specific product considered is a single-use medical device for orthopedic surgery, the Stryker Instruments MixeVac III bone cement mixer, which is currently sterilized using gamma radiation from cobalt-60 sources. Following ASTM International standards and input from the manufacturer, we characterized the effects of the three radiation sources on product functionality as well as on the mechanical and optical properties of the constituent polymers. Results indicate that although measurable differences in properties between the standard gamma irradiated materials and the alternative E-beam and X-ray irradiated materials were observed, those differences were small. Statistically significant differences were noted in the case of yellowness index for polyvinyl chloride, high-density polyethylene, and polycarbonate, and in the case of tensile elongation at break for high impact polystyrene and polyvinyl chloride. In general, the results of this study support the viability of E-beam and X-ray radiation as alternative options to cobalt-60 gamma radiation for sterilization of Stryker single-use universal bone cement mixer medical devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2026

Experimental and simulation study of target biasing effects on plasma transport in linear plasma device MPS-LD

Linear plasma devices (LPDs) are important experimental platforms for investigating plasma–material interactions (PMI). In PMI experiments, it has been found that applying a target bias not only effectively modifies the incident ion energy, but also induces significant changes in the electron density and electron temperature, whereby the evolution of these plasma parameters is primarily governed by plasma transport processes. However, at present, the physical process and mechanism underlying such bias-induced variations remain unclear. In this work, biasing experiments under argon plasma discharge conditions were first carried out on the MPS-LD device. For the corresponding experiments, an electric potential model was newly developed based on the BOUT++ LPD module, enabling self-consistent simulations of plasma transport under biased conditions. Numerical simulations were then performed to reproduce the experimental results and to validate the accuracy of the proposed model. Finally, by combining experimental measurements with numerical simulations, a bias-voltage scan was performed to investigate how the electron density and electron temperature vary with the bias voltage (U bias ). The results show that applying negative bias decreases the target electron density (n e,T ) while increasing the target electron temperature (T e,T ). In contrast, positive bias increases both n e,T and T e,T ; however, at high positive bias, n e,T first reaches a maximum and subsequently decreases with further increases in U bias . The underlying physical mechanisms are analyzed using particle flux, momentum, and energy conservation. It indicates that the applied bias regulates the parallel electric field, thereby changing ion and electron velocities, and consequently affecting the electron density. At high positive bias, the ion velocity is further influenced by ion viscosity, leading to the reversal in n e,T . Meanwhile, the enhanced parallel electric field drives stronger currents, significantly increasing ion–electron frictional work and converting the input bias power into electron energy, which raises the electron temperature. In conclusion, these results contribute to a deeper understanding of the effects and mechanisms of biasing on plasma transport in the MPS-LD device.

BOUT++ simulation↗

DOE OSTI2026

Understanding Photovoltage Deficits in Electrochemically Grown Tin Sulfide (SnS) Thin-Film Photovoltaic Devices

Tin(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.

deposition↗

DOE OSTI2017

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

Multinary semiconductor nanoparticles such as CuInS 2 , AgInS 2 , and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2 -ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctly different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.

quantum dots, LED, light-emitting devices, hole-tr↗

DOE OSTI2017

Real-Time Sensing of Single-Ligand Delivery with Nanoaperture-Integrated Microfluidic Devices

The measurement of biological events on the surface of live cells at the single-molecule level is complicated by several factors including high protein densities that are incompatible with single-molecule imaging, cellular autofluorescence, and protein mobility on the cell surface. Here, we fabricated a device composed of an array of nanoscale apertures coupled with a microfluidic delivery system to quantify single-ligand interactions with proteins on the cell surface. We cultured live cells directly on the device and isolated individual epidermal growth factor receptors (EGFRs) in the apertures while delivering fluorescently labeled epidermal growth factor. We observed single ligands binding to EGFRs, allowing us to quantify the ligand turnover in real time. These results demonstrate that this nanoaperture-coupled microfluidic device allows for the spatial isolation of individual membrane proteins while maintaining them in their cellular environment, providing the capability to monitor single-ligand binding events while maintaining receptors in their physiological environment. Lastly, these methods should be applicable to a wide range of membrane proteins.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2018

Electro-Optical Device with Tunable Transparency Using Colloidal Core/Shell Nanoparticles

Here, suspended particle devices (SPDs) adapted for controlling the transmission of electromagnetic radiation have become an area of considerable focus for smart window technology due to their desirable properties, such as instant and precise light control and cost-effectiveness. Here, we demonstrate a SPD with tunable transparency in the visible regime using colloidal assemblies of nanoparticles. The observed transparency using ZnS/SiO 2 core/shell colloidal nanoparticles is dynamically tunable in response to an external electric field with increased transparency when applied voltage increases. The observed transparency change is attributed to structural ordering of nanoparticle assemblies and thereby modifies the photonic band structures, as confirmed by the finite-difference time-domain simulations of Maxwell’s equations. The transparency of the device can also be manipulated by changing the particle size and the device thickness. In addition to transparency, structural colorations and their dynamic tunability are demonstrated using α-Fe 2 O 3 /SiO 2 core/shell nanomaterials, resulting from the combination of inherent optical properties of α-Fe 2 O 3 /SiO 2 nanomaterials and coloration due to their tunable structural particle assemblies in response to electric stimuli.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Flexible and high-performance electrochromic devices enabled by self-assembled 2D TiO 2 /MXene heterostructures

Transition metal oxides (TMOs) are promising electrochromic (EC) materials for applications such as smart windows and displays, yet the challenge still exists to achieve good flexibility, high coloration efficiency and fast response simultaneously. MXenes (e.g. Ti 3 C 2 T x ) and their derived TMOs (e.g. 2D TiO 2 ) are good candidates for high-performance and flexible EC devices because of their 2D nature and the possibility of assembling them into loosely networked structures. Here we demonstrate flexible, fast, and high-coloration-efficiency EC devices based on self-assembled 2D TiO 2 /Ti 3 C 2 T x heterostructures, with the Ti 3 C 2 T x layer as the transparent electrode, and the 2D TiO 2 layer as the EC layer. Benefiting from the well-balanced porosity and connectivity of these assembled nanometer-thick heterostructures, they present fast and efficient ion and electron transport, as well as superior mechanical and electrochemical stability. We further demonstrate large-area flexible devices which could potentially be integrated onto curved and flexible surfaces for future ubiquitous electronics.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Single electrons have been adiabatically transported while confined to a moving quantum dot in short, all-electrical Si/SiGe shuttle device, called quantum bus (QuBus). Here we show a QuBus spanning a length of 10 μm and operated by only six simply-tunable voltage pulses. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μm) is (99.7 ± 0.3) %. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28 Si/SiGe, promises long-range spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2024

Quantum barriers engineering toward radiative and stable perovskite photovoltaic devices

Efficient photovoltaic devices must be efficient light emitters to reach the thermodynamic efficiency limit. Here, we present a promising prospect of perovskite photovoltaics as bright emitters by harnessing the significant benefits of photon recycling, which can be practically achieved by suppressing interfacial quenching. We have achieved radiative and stable perovskite photovoltaic devices by the design of a multiple quantum well structure with long (~3 nm) organic spacers with oleylammonium molecules at perovskite top interfaces. Our L-site exchange process (L: barrier molecule cation) enables the formation of stable interfacial structures with moderate conductivity despite the thick barriers. Compared to popular short (~1 nm) Ls, our approach results in enhanced radiation efficiency through the recursive process of photon recycling. This leads to the realization of radiative perovskite photovoltaics with both high photovoltaic efficiency (in-lab 26.0%, certified to 25.2%) and electroluminescence quantum efficiency (19.7 % at peak, 17.8% at 1-sun equivalent condition). Furthermore, the stable crystallinity of oleylammonium-based quantum wells enables our devices to maintain high efficiencies for over 1000 h of operation and >2 years of storage.

14 SOLAR ENERGY↗