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At least 1,261 records · Page 70

Active learning of chemical reaction networks via probabilistic graphical models and Boolean reaction circuits

Discerning networks of many reactions among multiple interconverting species is challenging. Here, we present a reaction network identification methodology. Our methodology enumerates all stoichiometrically and chemically feasible reactions and requires statistical evidence from effluent concentrations for the inclusion or exclusion of each from the reaction network, contrasting with the commonly seen incremental approach and other work of relying heavily upon chemical intuition and assuming the reactions occurring. Using graph theory alongside an active learning design of experiments that propose maximally informative feeds, we identify the underlying reaction network with minimal laboratory runs. Here, we introduce chemistry-probabilistic graphical modeling and Boolean reaction circuits to statistically quantify which reactions occur from effluent concentrations. Our methodology accurately discerns active reactions, as showcased upon a laboratory network of cross-ketonization of furoic and lauric acid and validated upon simulated networks of thermal and CO 2 -assisted ethane dehydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Trimerized small-molecule acceptors enable high-performance organic solar cells with high open-circuit voltage and prolonged life-time

Although the recent development of Y-series small-molecule acceptors (SMAs) has led to a dramatic increase in the power conversion efficiency (PCE) of organic solar cells (OSCs), the operational stability (device lifetime) of OSCs is inadequate for commercialization. In this study, we develop a new trimer acceptor (TYT), consisting of three Y-based molecules linked by electron-donating spacers, to realize an OSC with high-performance (PCE > 18%) and -stability (t 80% lifetime > 8000 h under 1 sun illumination, in which t 80% lifetime is the time required for the PCE of the OSC to reach 80% of its initial value). We demonstrate that the trimerization approach affords an acceptor, TYT, with an upshifted lowest unoccupied molecular orbital energy level, which, in turn, affords an efficient OSC with a high open-circuit voltage (0.964 V). In addition, the glass-transition temperature (T g ) of TYT (217 °C) is significantly higher than those of monomer (MYT, T g = 80 °C) and dimer (DYT, T g = 127 °C) acceptors, which effectively suppresses the molecular diffusion of TYT in a blend film with a polymer donor. Accordingly, a TYT-based OSC demonstrates a high PCE (18.2%) and long t 80% lifetime under 1 sun illumination (8454 h), outperforming MYT- and DYT-based OSCs that exhibit PCEs and t 80% lifetimes of 16.4% and 35 h, and 17.3% and 2551 h, respectively. Therefore, this study provides important guidelines for the design of electron acceptors in achieving OSCs with high performance and stability close to a commercial level.

14 SOLAR ENERGY↗

Open-circuit submodule fault diagnosis in MMCs using support vector machines

Series connection of semiconductor submodules (SM) in a modular multilevel converter (MMC) makes the MMC prone to open-circuit (OC) IGBT failures inside SMs. If left undetected, these faults degrade the operation of the MMC and lead to its instability. This article proposes a method to detect, localise, and classify single OC SM faults in an MMC using support vector machines (SVM) trained with data obtained from the capacitor voltage balancing block of the MMC control system. The proposed method relies on data extracted from the sorted capacitor voltage arrays of the upper and lower phase arms. Therefore, it does not require extra measurements and hardware. Additionally, it offers a fixed time for detecting and localising OC SM faults. This method is easy to implement as SVM has a simple decision function. Time-domain simulation case studies are performed on a three-phase nine-level MMC to evaluate the performance of the proposed method.

42 ENGINEERING↗

Analytical Identification Method of Generalized Short‐Circuit Ratio Using Phasor Measurement Units

This paper introduces a novel analytical approach for the identification of the admittance matrix and the generalized short-circuit ratio (gSCR) in power systems integrated with renewable energy sources. The proposed method leverages voltage and current measurements from phasor measurement units (PMUs) to construct a least squares objective function, which is then solved using matrix calculus and partial derivatives. Unlike conventional optimization algorithms, this approach provides an analytical solution that substantially reduces data requirements, enabling the efficient and accurate identification of the gSCR with smaller datasets. Additionally, its fixed computational complexity allows for real-time updates as new data are collected, ensuring continuous refinement of the system of equations and enabling rapid, precise gSCR calculations. The method also exhibits strong robustness against measurement noise, making it well-suited for practical applications in dynamic power systems. The combination of reduced data requirements, real-time adaptability, noise robustness and fixed computational load establishes this method as a highly efficient and reliable tool for real-time power system stability analysis. Case studies on an EPRI 36-bus system demonstrate the method's effectiveness, highlighting its accuracy in closely matching true gSCR values, even under diverse disturbances and noisy conditions.

Han, Zelei [Hohai University, Nanjing (China)] (OR↗

GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

This paper explores performance enhancement of the common ground dynamic dc‐link (CGDL) inverter for single phase photovoltaic (PV) applications by a combination of gallium nitride (GaN) devices, split phase topology, coupled inductors, and zero voltage transition (ZVT) scheme. The CGDL inverter has the inherent advantage of minimised dc‐link capacitance and negligible leakage current due to the common ground configuration, but its reported efficiency was usually lower because of the higher dc‐link voltage used for the reduction of decoupling capacitance to a great extent. To solve the efficiency problem, in this study, a soft switching circuit is proposed for the first stage, while a coupled inductor integrated magnetics is incorporated in the second stage to reduce inductor loss, volume, and cost. Both of these topological improvements combined with the use of GaN devices facilitate in achieving high efficiency without compromising converter power density. Extensive experimental results are provided from a GaN based 1 kVA hardware prototype to demonstrate the superior performance of the CGDL inverter attaining a peak efficiency of 98.7% and a California Energy Commission efficiency of 98.5% at 75/50 kHz switching frequency.

Xia, Yinglai↗

Cyberattack Detection and Mitigation on Central Volt‐VAr Using Circuit Law and Machine Learning

ABSTRACT In a distribution grid, voltage is maintained within a nominal range through a Volt‐VAr function that controls capacitor banks, reactive power of distributed energy resources (DER), and on‐load tap changers (OLTC). Availability of communications helps with the implementation of central Volt‐VAr control; however, it also opens the system to cyberattacks, causing voltage disturbances. Previous work has shown the adverse impacts of false data injection (FDI) on the central Volt‐VAr control; however, very few works have studied methods to detect and mitigate FDI on Volt‐VAr control. This paper addresses gaps in the detection and mitigation of FDI on the measurement packets of a central Volt‐VAr control. This work uses a two‐stage algorithm for cyberattack detection since the accuracy of a single‐stage machine learning (ML)–based detection method decreases while dealing with unseen data. The first stage is based on the verification of measurements against circuit laws, and the second stage utilizes a tree search algorithm and an ML method to detect the falsified data. This paper compares long short‐term memory (LSTM) and bidirectional LSTM (BiLSTM) as the employed ML algorithms. Finally, the mitigation algorithm replaces the falsified data with the estimated output of the ML algorithm. The effectiveness of the proposed method is tested for several cases using the IEEE 13‐bus test system in PSCAD software.

Beikbabaei, Milad [Bradley Department of Electrica↗

A multilayer multi-configurational approach to efficiently simulate large-scale circuit-based quantum computers on classical machines

Here, a multilayer multi-configurational theory framework is adapted to simulate circuit-based quantum computers. Quantum addition of superpositions of an exponential number of summands is performed in polynomial time with high accuracy. We demonstrate numerically accurate calculations including up to one million qubits for entangling benchmarks. Simulation cost can be assessed by entropy-based entanglement measures. For the considered systems, we show that the entanglement only grows weakly with the system size. The present simulations demonstrate how quantum algorithms in low-entropy regimes can be used efficiently on classically simulated quantum computers.

97 MATHEMATICS AND COMPUTING↗

Impact of dopant-induced optoelectronic tails on open-circuit voltage in arsenic-doped Cd(Se)Te solar cells

Fluctuations refer to inhomogeneity in the distribution of donors and acceptors at the nanometer scale and occur in many compound solar cell materials such as Cu(In,Ga)Se 2 , Cu 2 ZnSn(S,Se) 4 , and CdSe x Te 1-x . In this work, numerical simulations show that these fluctuations produce not only electrostatic potential variation, but also, local changes in the carrier density and effective bandgap. For a CdSe x Te 1-x absorber doped with arsenic, simulations and cathodoluminescence data within single grains demonstrate how donor and acceptor densities—consistent with capacitance-voltage and secondary-ion mass-spectrometry data—produce tails in photoluminescence, quantum efficiency, and absorption measurements. Using multiple theoretical approaches, we demonstrate that the fluctuations can hinder expected performance gains from increased carrier density, and we describe the significant open-circuit voltage deficit observed in the CdSe x Te 1-x :As solar technology. Our results demonstrate that it is critical to characterize and reduce carrier compensation to realize a higher efficiency.

14 SOLAR ENERGY↗

Tailoring superconducting phases observed in hyperdoped Si:Ga for cryogenic circuit applications

Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T c ) and magnetic fields (B c ) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor-semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T c for Si:Ga whose magnitude strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition at temperatures as low as 20 mK.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Nitrogen plasma passivated niobium resonators for superconducting quantum circuits

Microwave loss in niobium metallic structures used for superconducting quantum circuits is limited by a native surface oxide layer formed over a timescale of minutes when exposed to an ambient environment. Here, in this work, we show that nitrogen plasma treatment forms a niobium nitride layer at the metal–air interface, which prevents such oxidation. X-ray photoelectron spectroscopy confirms the doping of nitrogen more than 5 nm into the surface and a suppressed oxygen presence. This passivation remains stable after aging for 15 days in an ambient environment. Cryogenic microwave characterization shows an average filling-factor-adjusted two-level-system loss tangent Fδ TLS of (2.9±0.5)·10 –7 for resonators with a 3 μm center strip and (1.0±0.3)·10 –7 for a 20 μm center strip, exceeding the performance of unpassivated samples by a factor of four.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Circuit-level design principles for transmission-mode microwave impedance microscopy

A recently developed technique of transmission-mode microwave impedance microscopy (T-MIM) has greatly extended the capabilities of standard reflection-mode MIM to novel applications, such as the in operando study of nanoscale electro-acoustic devices. As is common for new techniques, systematic design principles for boosting sensitivity and balancing bandwidth are lacking. Here, we show numerically and analytically that the T-MIM signal is proportional to the reflection-mode voltage enhancement factor η of the circuit, as long as the output impedance of the local voltage source is properly treated. We show that this proportionality holds in the currently achievable “weak sampling” regime and beyond, for which we demonstrate a realistic path with commercially available superconducting components and critically coupled impedance matching networks. Furthermore, we demonstrate that for these next-generation designs, the sensitivity is generally maximized at a slightly different frequency from the unloaded S 11 resonance, which can be explained by the maximum power transfer theorem.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Broadband bandpass Purcell filter for circuit quantum electrodynamics

In circuit quantum electrodynamics, qubits are typically measured using dispersively coupled readout resonators. Coupling between each readout resonator and its electrical environment, however, reduces the qubit lifetime via the Purcell effect. Inserting a Purcell filter counters this effect while maintaining high readout fidelity but reduces measurement bandwidth and, thus, limits multiplexing readout capacity. In this Letter, we develop and implement a multi-stage bandpass Purcell filter that yields better qubit protection while simultaneously increasing measurement bandwidth and multiplexed capacity. Here, we report on the experimental performance of our transmission-line-based implementation of this approach, a flexible design that can easily be integrated with current scaled-up, long coherence time superconducting quantum processors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Training self-learning circuits for power-efficient solutions

As the size and ubiquity of artificial intelligence and computational machine learning models grow, the energy required to train and use them is rapidly becoming economically and environmentally unsustainable. Recent laboratory prototypes of self-learning electronic circuits, such as “physical learning machines,” open the door to analog hardware that directly employs physics to learn desired functions from examples at a low energy cost. In this work, we show that this hardware platform allows for an even further reduction in energy consumption by using good initial conditions and a new learning algorithm. Using analytical calculations, simulations, and experiments, we show that a trade-off emerges when learning dynamics attempt to minimize both the error and the power consumption of the solution—greater power reductions can be achieved at the cost of decreasing solution accuracy. Finally, we demonstrate a practical procedure to weigh the relative importance of error and power minimization, improving the power efficiency given a specific tolerance to error.

Stern, Menachem (ORCID:0000000302158082)↗

Improved internal short circuit models for thermal runaway simulations in lithium-ion batteries

Thermal runaway (TR) modeling is one of the primary tools that can be used to overcome challenges associated with lithium-ion battery (LIB) safety. Among all LIB accidents that have occurred over the past decade, Internal Short Circuit (ISC) remains the most common trigger mechanism. Many available models in the literature either use a simplified approach to simulate ISC or completely ignore its contribution. The aim of this study is to understand the nature of the heat released for different types of ISC scenarios, including aluminum-anode, anode–cathode, and copper-cathode ISC. We study ISC behavior using a coupled electrochemical–thermal model with an integrated TR chemical kinetics solver built in the COMSOL Multiphysics framework. The time duration of heat release and the magnitude of the peak ISC current are studied as functions of parameters such as the size of the penetrating filament and the capacity of the cell. The numerical results are used to build an empirical model validated against the published experimental TR propagation data. Our model can be successfully used as a viable low-cost substitute in lower order (lumped) TR simulations to enable TR prevention and mitigation.

Singh, Bakhshish Preet (ORCID:0000000264751992)↗

Growth and structure of alpha-Ta films for quantum circuit integration

Tantalum films incorporated into superconducting circuits have exhibited low surface losses, resulting in long-lived qubit states. The remaining loss pathways originate in microscopic defects that manifest as two level systems (TLSs) at low temperatures. These defects limit performance, so careful attention to tantalum film structures is critical for optimal use in quantum devices. In this work, we investigate the growth of tantalum using magnetron sputtering on sapphire, Si, and photoresist substrates. In the case of sapphire, we present procedures for the growth of fully-oriented films with α-Ta [1 1 1]//Al2O3 [0 0 0 1] and α-Ta [1 −1 0]//Al2O3 [1 0 −1 0] orientational relationships and having residual resistivity ratio (RRR) ∼ 60 for 220 nm thick films. On Si, we find a complex grain texturing with Ta [1 1 0] normal to the substrate and RRR ∼ 30. We further demonstrate airbridge fabrication using Nb to nucleate α-Ta on photoresist surfaces. For the films on sapphire, resonators show TLS-limited quality factors of 1.3 ± 0.3 × 106 at 10 mK (for a waveguide gap and conductor width of 3 and 6 μm, respectively). Structural characterization using scanning electron microscopy, x-ray diffraction, low temperature transport, secondary ion mass spectrometry, and transmission electron microscopy reveal the dependence of residual impurities and screw dislocation density on processing conditions. The results provide practical insights into the fabrication of advanced superconducting devices including qubit arrays and guide future works on crystallographically deterministic qubit fabrication.

42 ENGINEERING↗

Properties of Nb x Ti (1–x) N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits

Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of advanced lithography are instrumental in facilitating mature CMOS processes, ensuring uniformity, and optimizing the yield. Here, this study explores the properties of Nb x Ti (1–x) N films fabricated by magnetron DC sputtering on 300 mm Si wafers. As a promising alternative to traditional Nb in device manufacturing, Nb x Ti (1–x) N offers numerous advantages, including enhanced stability and scalability to smaller dimensions, in both processing and design. As a ternary material, Nb x Ti (1–x) N allows engineering material parameters by changing deposition conditions. The engineered properties can be used to modulate device parameters through the stack and mitigate failure modes. We report characterization of Nb x Ti (1–x) N films at less than 2% thickness variability, 2.4% T c variability and 3% composition variability. Film resistivity (140–375 Ωcm) shows a strong correlation with the film oxygen content, while the critical temperature T c (4.6 K–14.1 K) is strongly affected by film stoichiometry and its microstructure has only a moderate effect on modifying T c . Our results offer insights about the interplay between film stoichiometry, film microstructure and critical temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Syncopated dynamical decoupling to suppress crosstalk in quantum circuits

Theoretically understanding and experimentally characterizing and modifying the underlying Hamiltonian of a quantum system is of utmost importance in achieving high-fidelity quantum gates for quantum computing. Here, in this work, we explore the use of dynamical decoupling (DD) in characterizing and suppressing undesired two-qubit couplings as well as the underlying single-qubit decoherence, both significant hurdles to achieving precise quantum control and realizing quantum computing on many hardware prototypes. Through discrete search of DD sequences, we identify sequences that protect against decoherence and selectively target unwanted two-qubit interactions of general form. On a transmon-qubit-based superconducting quantum device, we identify separate white and 1/𝑓 noise components underlying the single-qubit decoherence and a static ZZ coupling between pairs of qubits. A family of syncopated DD sequences is found and their efficiency is demonstrated in two-qubit benchmarking experiments. The syncopated decoupling technique significantly boosts performance in a realistic algorithmic quantum circuit.

97 MATHEMATICS AND COMPUTING↗

Thermal 𝑅⁢𝐶 circuit model for resolving the thermal paradox

Thermal measurements of heat capacity and thermal conductivity in a wide range of insulators and superconductors exhibit a “thermal paradox”: a large linear specific heat reminiscent of neutral Fermi surfaces (associated with fractionalized quasiparticles) in nonmetallic samples that exhibit no corresponding linear temperature coefficient to the thermal conductivity. At first sight, these observations appear to support the formation of a continuum of thermally localized many-body excitations, a form of many-body localization that would be fascinating in its own right. Here, in this work, by mapping thermal conductivity measurements onto thermal 𝑅⁢𝐶 circuits, we argue that the development of extremely long thermal relaxation times, a “thermal bottleneck,” is likely in systems with either many-body localization or neutral Fermi surfaces due to the large ratio between the electron and phonon specific heat capacities. We present a reevaluation of thermal conductivity measurements in materials exhibiting a thermal paradox that can be used in future experiments to deliberate between these two exciting alternatives.

heat transfer↗