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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Your Clean Graphene is Still Not Clean

Researchers working with thin samples, such as monolayer graphene, are consistently struggling against contamination. Indeed, the problem of hydrocarbon contamination is known from the earliest days of electron microscopy and efforts to reduce this problem are ubiquitous to almost all high-vacuum experiments. Accurate knowledge of the behavior of such contamination is essential for electron beam (e-beam) based atomic fabrication, where it is aspired to select and control matter on an atom-by-atom basis. Here, the vexing question of hydrocarbon contamination on graphene is taken up. Image intensity is used to directly reveal the presence of diffusing hydrocarbons on ostensibly clean graphene. These diffusing hydrocarbons are previously inferred but not directly observed. Surprising dynamic variations of the concentration of these hydrocarbons impels questions about their origin. Here, some possible explanations are presented and some tentative conclusions are drawn. This work updates the conceptual model of “clean graphene” and offers refinements to the description of e-beam induced hydrocarbon deposition.

atomic fabrication↗
DOE OSTI2026

Mechanism of H 2 plasma-enabled reduction of hematite thin films

Hydrogen plasma is gaining significant interest as a promising pathway for direct iron ore reduction and for lowering process temperatures but the reduction mechanism remains poorly understood. In this work we analyzed the plasma and thermal reduction of thin-film hematite (Fe 2 O 3 ) at temperatures below 340 °C using X-ray diffraction and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Plasma reduced the incubation period by an order of magnitude and increased the reduction rate by a factor of 2.6 compared to thermal reduction. Plasma-produced H-atoms facilitate the formation of numerous iron nucleation sites, bypassing the energetically unfavorable dissociative adsorption of H 2 on iron oxide. These iron nuclei can autocatalyze the reduction of the surrounding hematite via a hydrogen spillover mechanism. Our results demonstrate that plasma-derived H-atoms primarily impact the initial nucleation-limited stage. These new insights provide a mechanistic framework that can aid the implementation and optimization of hydrogen plasma-assisted iron oxide reduction at reduced temperatures.

08 HYDROGEN↗
DOE OSTI2023

Machine-Guided Design of Oxidation-Resistant Superconductors for Quantum Information Applications

Decoherence in superconducting qubits has long been attributed to two-level systems arising from the surfaces and interfaces present in real devices. A recent significant step in reducing decoherence was the replacement of superconducting niobium by superconducting tantalum, resulting in a tripling of transmon qubit lifetimes (T1). The identity, thickness, and quality of the native surface oxide, is thought to play a major role, as tantalum only has one oxide whereas niobium has several. Here we report the development of a thermodynamic metric to rank materials based on their potential to form a well-defined, thin, surface oxide. We first computed this metric for known binary and ternary metal alloys using data available from the Materials Project and experimentally validated the strengths and limits of this metric through the preparation and controlled oxidation of eight known metal alloys. Then we trained a convolutional neural network to predict the value of this metric from atomic composition and atomic properties. This allowed us to compute the metric for materials that are not present in the Materials Project, including a large selection of known superconductors, and, when combined with Tc, allowed us to identify new candidate superconductors for quantum information science and engineering (QISE) applications. We tested the oxidation resistance of a pair of these predictions experimentally. Our results are expected to lay the foundation for the tailored and rapid selection of improved superconductors for QISE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1979

Polycrystalline silicon on tungsten substrates

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Bevolo, A. J.↗
NASA NTRS1984

Microstructures and properties of rapidly solidified alloys

The microstructure and properties of rapidly solidified aluminum alloys were researched. The effects of powder and flake chemistry and morphology and alternative consolidation processing parameters are being conducted. Samples of the powders being utilized were obtained for comprehensive metallurgical characterization. Seven aluminum alloys in the form of thin foils were studied by a variety of techniques including optical metallography, scanning electron microscope, and transmission electron microscope. Details of the microstructural characteristics are presented along with a discussion of the solidification process. A better understanding of the microstructure of the rapidly solidified aluminum alloys prepared by a variety of techniques such as roller quenching, the vacuum atomized procedure, ultrasonically atomized in inert atmospheres, and atomized in flue gas was provided.

Shechtman, D.↗
DOE OSTI2020

Structure and Desorption Kinetics of Acetonitrile Thin Films on Pt(111) and on Graphene on Pt(111)

Acetonitrile thin films were prepared on Pt(111) and on graphene on Pt(111) using molecular beam techniques. Temperature programed desorption (TPD) experiments of acetonitrile on Pt(111) displayed first-order kinetics for monolayer desorption and zero-order kinetics for multilayer desorption. We used reflection adsorption infrared spectroscopy (RAIRS) to characterize the orientation of the monolayer on Pt(111). Acetonitrile molecules have been shown to adopt a bridging structure where the C=N bond breaks to form two single bonds to underlying platinum atoms. When Tdeposition = 120 K our RAIRS spectra are consistent with this bridging configuration. However, when Tdeposition was lowered to 60 K molecules retained the C=N bond and adopted a vertical orientation with the nitrogen closest to the platinum. On graphene, the TPD experiments show that both the monolayer and multilayer desorb with zero-order kinetics. Our RAIRS spectra suggest that the monolayer consists of acetonitrile molecules oriented with their molecular axes parallel to the graphene substrate. This orientation did not change when Tdeposition was varied from 60 to 120 K. Our results provide a more complete picture of how acetonitrile molecules interact with Pt(111) and with graphene surfaces.

desorption tin films, molecules, thin films, desor↗
NASA NTRS1994

Method for forming single phase, single crystalline 2122 BCSCO superconductor thin films by liquid phase epitaxy

A substantially single phase, single crystalline, highly epitaxial film of Bi.sub.2 CaSr.sub.2 Cu.sub.2 O.sub.8 superconductor which has a T.sub.c (zero resistance) of 83 K is provided on a lattice-matched substrate with no intergrowth. This film is produced by a Liquid Phase Epitaxy method which includes the steps of forming a dilute supercooled molten solution of a single phase superconducting mixture of oxides of Bi, Ca, Sr, and Cu having an atomic ratio of about 2:1:2:2 in a nonreactive flux such as KCl, introducing the substrate, e.g., NdGaO.sub.3, into the molten solution at 850.degree. C., cooling the solution from 850.degree. C. to 830.degree. C. to grow the film and rapidly cooling the substrate to room temperature to maintain the desired single phase, single crystalline film structure.

Pandey, Raghvendra K.↗
DOE OSTI2021

Electronic growth of Pd(111) nanostructures on MoS 2

Quantum confinement effects can induce the formation of discrete nanostructures with well-defined preferred heights in thin metallic films. In most systems, such electronic growth modes are weak and limited to cryogenic conditions. Recently, however, we have discovered that metals grown upon van der Waals surfaces can exhibit electronic growth at, or even above, room temperature to spontaneously form well-defined and highly stable nanostructures. Here, we explore the initial stages of room temperature deposition of Pd onto MoS 2 . We found that, even for minimal thicknesses, Pd spontaneously formed discrete islands with three atomic layers. The islands maintained this preferred height for nominal coverages below three atomic layers. At higher coverages, the preferred height switched abruptly to six atomic layers. Unlike previous studies using Au or Ag, the islands did not increase laterally with coverage but rather increased in number with lateral size remaining about the same. The preferred heights in Pd/MoS 2 correlate to the Pd Fermi surface topography and are also consistent with thicknesses showing minima in the density of states at the Fermi level, which suggest that the electronic growth modes are the driving factors in these self-assembled Pd nanostructures. The Pd system shows a preference for island nucleation compared to Au and Ag which grow laterally with increasing coverage. Furthermore, this is likely related to differences in bonding at the interface as Pd is typically much more reactive than Ag or Au.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Semi-metallic SrIrO 3 films using solid-source metal-organic molecular beam epitaxy

Perovskite SrIrO 3 films and its heterostructures are very promising, yet less researched, avenues to explore interesting physics originating from the interplay between strong spin–orbit coupling and electron correlations. Elemental iridium is a commonly used source for molecular beam epitaxy (MBE) synthesis of SrIrO 3 films. However, elemental iridium is extremely difficult to oxidize and evaporate while maintaining an ultra-high vacuum and a long mean free path. Here, we calculated a thermodynamic phase diagram to highlight these synthesis challenges for phase-pure SrIrO 3 and other iridium-based oxides. We addressed these challenges using a novel solid-source metal-organic MBE approach that rests on the idea of modifying the metal-source chemistry. Phase-pure, single-crystalline, coherent, epitaxial (001) pc SrIrO 3 films on (001) SrTiO 3 substrate were grown. Films demonstrated semi-metallic behavior, Kondo scattering, and weak antilocalization. Our synthesis approach has the potential to facilitate research involving iridate heterostructures by enabling their atomically precise syntheses.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
NASA NTRS1982

Ellipsometric studies of sputtered silicon nitride on n-GaAs

Ellipsometry, which is the study of optical systems through their effect on polarized light, is a nondestructive technique offering extremely high sensitivity and in situ operation. One of the intriguing possibilities is to make use of the high sensitivity of ellipsometry for studying the very thin interface between an insulating film and a semiconductor substrate. Researchers have been especially interested in native or anodic oxides. In a recent study, Aspnes and Theeten used ellipsometry to study the interface between silicon and its thermally grown oxide, SiO2. These authors were able to conclude that the interface consisted of a 7 +/- 2 A graded region of atomically mixed silicon and oxygen. In this paper we report both analysis and experimental results for the system: sputtered silicon nitride on (100) n-type gallium arsenide.

Peng, Y. K.↗
DOE OSTI2023

Vapor–Phase Synthesis of Electrocatalytic Covalent Organic Frameworks

The inability to process many covalent organic frameworks (COFs) as thin films plagues their widespread utilization. Herein, a vapor-phase pathway for the bottom-up synthesis of a class of porphyrin-based COFs is presented. This approach allows integrating electrocatalysts made of metal-ion-containing COFs into the electrodes’ architectures in a single-step synthesis and deposition. By precisely controlling the metal sites at the atomic level, remarkable electrocatalytic performance is achieved, resulting in unprecedentedly high mass activity values. How the choice of metal atoms, i.e., cobalt and copper, can determine the catalytic activities of POR-COFs is demonstrated. The theoretical data proves that the Cu site is highly active for nitrate conversion to ammonia on the synthesized COFs.

25 ENERGY STORAGE↗
DOE OSTI2020

Enhanced positive and negative exchange bias in FeF 2 /Ni with dusted interfaces

An enhanced exchange bias was found in FeF 2 /Ni interfaces by inserting dusting of Pd and Cu atoms. We have used an ultrathin wedge to investigate systematically the effect of a discontinuous nonmagnetic spacer between the antiferromagnetic and ferromagnetic layers. Negative and positive exchange biases are symmetric and maximized for less than two angstroms of the nonmagnetic layer. Moreover, the dusting reduces the field cooling threshold to switch between the negative and the positive exchange bias. This finding demonstrates that nonmagnetic dusted layers can improve the interfacial exchange energy density in antiferromagnetic/ferromagnetic heterostructures and modify the bulk antiferromagnetic domain structure. Other dusting materials such as Ag, Ti, V, and SiO 2 showed no enhancement in FeF 2 /Ni bilayers, which indicates the atomic sensitivity of this effect.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1986

Spacecraft mass spectrometer ion source employing field emission cathodes

An ion source that utilizes a pair of thin-film field emission cathodes to provide current for electric impact ionization is studied. The field emission cathodes are composed of microscopically small needle tips and an extraction electrode; the cathodes generate a 200-eV, 0.1-mA electron beam. The multistep process for the manufacturing of the field emission cathodes is examined. The operation of the ion source, which ionizes atoms and molecules that enter the mass spectrometer with a ram velocity of about 80 km/sec, is described.

Curtis, C. C.↗
NASA NTRS1990

High mass resolution isochronous time-of-flight spectrograph for three-dimensional space plasma measurements

By combining a toroidal electrostatic analyzer with a novel cylindrically symmetric isochronous time-of-flight mass spectrometer, an instrument was developed that simultaneously determines the three-dimensional distribution function of ions and differentiates species. The ion mass is determined to high resolution (M/Delta-M greater than 50) from the time of flight within a harmonic field configuration defined by hyperboloid equipotential surfaces. A second conventional time-of-flight channel makes use of particles leaving the thin entrance foil as neutrals. An additional solid state detector in which the neutrals are stopped allows the total energy and thereby the ionic charge of the incident ions to be determined as well. Information from the neutral and the ion channels can be combined to determine the total mass of an incident molecular ion and the mass of one atomic fragment.

Moebius, E.↗
NASA NTRS2001

Spectroscopic Determination of the Physical Conditions in Hot, Optically Thin Sources

This annual report covers the period from Oct 1, 2000 to Sep 30, 2001. The Astrophysics Plasma Emission Code and Database (APEC/APED), developed in part under this grant, have been upgraded to Version 1.1 and are now beginning to be used outside our research group in applications to X-ray spectral data from Chandra and XMM-Newton. These models represent the best theoretical data currently available and are reasonably complete below about 30 angstroms. Stellar coronae are being used to benchmark the atomic data in APED as part of the Emission Line Project. Initial results suggest that the models for most of the strongest lines are in good agreement with the observations, including the H-like and He-like emission from dominant elements and the Fe L shell emission, both near 1 keV and in the extreme ultraviolet near 100 eV. At this point in time, we define 'good agreement' at the level of accuracy expected from the atomic physics, approximately 20-30%. In order to benchmark the spectral models beyond the canonical theoretical accuracy, we are working closely with the Chandra gratings calibration group to ensure that we are using the optimal calibration, primarily effective areas and line response functions.

Brickhouse, N.↗
DOE OSTI2023

The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites

Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO2 substrate processing significantly improves the performance of (FAPbI3)0.97(MAPbBr3)0.03 by reducing micro-strain in the SnO2 lattice, allowing distribution of K+ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K+ at the perovskite/SnO2 interface, indicating K+ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.

conductive atomic force microscopy↗