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At least 1,261 records · Page 70

Model predictive control for active insulation in building envelopes

Active insulation systems (AISs) refer to building envelopes with insulation materials that can change their thermal conductivity and are coupled with thermal mass to reduce building energy consumption and peak power. In this research, a novel optimal control approach is proposed to evaluate the maximum theoretical energy and cost-saving potential of AISs. A time-varying model predictive control (TV-MPC) controller was used to optimally select the AIS mode and simultaneously determine the operation of the heating, ventilation and air conditioning (HVAC) system so that the maximum saving potential of the entire system can be realized. To comprehensively evaluate the power shifting flexibility of AISs, two optimization objectives—minimizing weekly electric energy consumption and minimizing weekly electricity cost—were considered. The summer season simulation results show that under the first objective, more than 50% electric and thermal energy was saved when the upper boundary of the indoor air temperature was set to 25 °C. Furthermore under the second optimization objective, 38% of the cost was saved. It can be expected that the developed approach can be easily applied to multiple types of AISs with different mechanisms.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Thermal conductivity measurements and modeling of ceramic fiber insulation materials

Ceramic fiber insulation materials are used in numerous applications (e.g. aerospace, fire protection, and military) for their stability and performance in extreme environments. However, the thermal properties of these materials have not been thoroughly characterized for many of the conditions that they will be exposed to, such as high temperatures, pressures, and alternate gaseous atmospheres. The resulting uncertainty in the material properties can complicate the design of systems using these materials. In this study, the thermal conductivity of two ceramic fiber insulations, Fiberfrax T-30LR laminate and 970-H paper, was measured as a function of atmospheric temperature and compression in an air environment using the transient plane source technique. Furthermore, a model is introduced to account for changes in thermal conductivity with temperature, compression, and ambient gas. The model was tuned to the collected experimental data and results are compared. Lastly, the tuned model is also compared to published data sets taken in argon, helium, and hydrogen environments and agreement is discussed.

36 MATERIALS SCIENCE↗

Development of a high-temperature inorganic synthetic foam with recycled fly-ash cenospheres for thermal insulation brick manufacturing

In this study, a novel inorganic synthetic solid foam composed of recycled fly-ash cenospheres (FACs) is developed with low-density, good thermal insulation performance, and reasonable mechanical strength. The manufacturing process utilizes low-fraction clay binder materials diluted in water, enabling a self-assembling mechanism assisted by natural capillary effect to form minimal contacts among the FACs. The microstructure and minimal contact formation were confirmed by optical and electron microscope imaging. Both thermal and mechanical properties of the fly-ash cenosphere synthetic solid foam (FAC-SSF) materials were experimentally studied as functions of key material parameters including cenosphere particle size and clay content. A numerical model was developed to predict the effective thermal conductivity of FAC-SSF using a three-step homogenization method which takes into account different thermal percolation paths within the material. The inorganic synthetic foam developed has the potential for thermal insulation applications taking advantage of their relatively simple, low-cost, and scalable manufacturing process, minimal use of binder materials, and relatively high mechanical strength and highly tailorable properties.

42 ENGINEERING↗

Laser strengthening of additive manufactured edge seal for vacuum insulated glazing with micro-size glass frit

Sealing of glass edge is a key step in developing cost-effective and durable vacuum insulated glazing for the drive towards net-zero energy buildings. In this study, to achieve a high-strength sealing with scalable and low-cost processing, we investigated a novel sealing method based on additive manufacturing and laser process and reported quantitative analysis of the laser assisted method sealing strength and the requirement of vacuum insulation glazing. Micro-size glass frits in printing ink and a continuous-wave laser curing were employed to allow the formation of a hermetic bonding layer with low thermal budget. Controlling various sealing parameters including laser traveling speed, spot diameter, and laser power, the water seepage and mechanical strength of the resulting glass-to-glass bonding were examined. Through the response surface methodology, we identified the optimized sealing condition where the bonding strength reached 5.68 MPa. A comparation of the bonding strength between thermal sealing method and laser-assisted method has been analyzed as well.

42 ENGINEERING↗

Preparation and thermal insulation analysis of SiCw-SiC foam with hollow skeletons via carbon foam template CVI method

Highlights: • SiC{sub w}-SiC foams with hollow skeleton were synthesized by chemical vapor infiltration of SiC film and SiC whiskers using flexible carbon foam as template. • The SiC{sub w}-SiC foams possess a large number of smaller pores due to the segmentation effect of the SiC whiskers. • SiC{sub w}-SiC foam exhibits an excellent thermal insulation property at high temperature. - Abstract: SiC{sub w}-SiC foams with hollow skeleton were synthesized by a simple procedure that consisted of the chemical vapor infiltration (CVI) and oxidation process. Flexible carbon foam was employed as CVI template. A typical structure of SiC{sub w}-SiC foams consisting of SiC supporter with hollow skeleton structure accompanying numerous crooked SiC whiskers was obtained after burning out carbon skeleton of the carbon foam during oxidation process. SiC{sub w}-SiC foams have a density of 0.11 ≤ ρ ≤ 0.12 g/cm{sup 3}, porosity ≥ 96% and a thermal conductivity at room temperature between 0.040 and 0.075 W/m·K. Thermal conductivity of the SiC{sub w}-SiC foams moderately increased with elevation of temperature, indicating that these foams with larger amount of whiskers exhibit excellent thermal insulation property at elevated temperature.

36 MATERIALS SCIENCE↗

Tunable high spin Chern-number insulator phases in strained Sb monolayer

High spin Chern-number insulators (HSCI) have emerged as a novel 2D topological phase of condensed matter that is beyond the classification of topological quantum chemistry. The HSCI phase with two pairs of gapless helical edge states is robust even in the presence of spin–orbit coupling due to the protection of a “hidden” feature spectrum topology. Here, in this work, we report the observation of a semimetallic Sb monolayer carrying the same band topology as HSCI with the spin Chern number equal to 2. Our calculations further indicate a moderate lattice strain can make Sb monolayer an insulator or a semimetal with a tunable spin Chern number from 0 to 3. The results suggest strained Sb monolayers as a promising platform for exploring exotic properties of the HSCI topological matter.

36 MATERIALS SCIENCE↗

An All-Ceramic, Anisotropic, and Flexible Aerogel Insulation Material

To exploit the high-temperature superinsulation potential of anisotropic thermal management materials, the incorporation of ceramic aerogel into the aligned structural networks is indispensable. Yet, the long-standing obstacle to exploring ultralight superinsulation ceramic aerogels is the inaccessibility of its mechanical elasticity, stability, and anisotropic thermal insulation. Here, we report a recoverable, flexible ceramic fiber-aerogel composite with anisotropic lamellar structure, where the interfacial cross-linking between ceramic fiber and aerogel is important in its superinsulation performance. The resulting ultralight aerogel composite exhibits a density of 0.05 g/cm 3 , large strain recovery (over 50%), and low thermal conductivity (0.0224 W m –1 K –1 ), while its hydrophobicity is achieved by in situ trichlorosilane coating with the water contact angle of 135°. The hygroscopic tests of such aerogel composites demonstrate a reversible thermal insulation. The mechanical elasticity and stability of the anisotropic composites, with its soundproof performance, shed light on the low-cost superelastic aerogel manufacturing with scalability for energy saving building applications.

36 MATERIALS SCIENCE↗

Robust Large Gap Two-Dimensional Topological Insulators in Hydrogenated III–V Buckled Honeycombs

A large gap two-dimensional (2D) topological insulator (TI), also known as a quantum spin Hall (QSH) insulator, is highly desirable for low-power-consuming electronic devices owing to its spin-polarized backscattering-free edge conducting channels. Although many freestanding films have been predicted to harbor the QSH phase, band topology of a film can be modified substantially when it is placed or grown on a substrate, making the materials realization of a 2D TI challenging. In this work we report a first-principles study of possible QSH phases in 75 binary combinations of group III (B, Al, Ga, In, and Tl) and group V (N, P, As, Sb, and Bi) elements in the 2D buckled honeycomb structure, including hydrogenation on one or both sides of the films to simulate substrate effects. A total of six compounds (GaBi, InBi, TlBi, TlAs, TlSb, and TlN) are identified to be nontrivial in unhydrogenated case; whereas for hydrogenated case, only four (GaBi, InBi, TlBi, and TlSb) remains nontrivial. The band gap is found to be as large as 855 meV for the hydrogenated TlBi film, making this class of III–V materials suitable for room temperature applications. TlBi remains topologically nontrivial with a large band gap at various hydrogen coverages, suggesting the robustness of its band topology against bonding effects of substrates.

2D topological insulators↗

Chemical disorder in topological insulators: A route to magnetism tolerant topological surface states

Here, we show that the chemical inhomogeneity in ternary three-dimensional topological insulators preserves the topological spin texture of their surface states against a net surface magnetization. The spin texture is that of a Dirac cone with helical spin structure in the reciprocal space, which gives rise to spin-polarized and dissipation-less charge currents. Thanks to the nontrivial topology of the bulk electronic structure, this spin texture is robust against most types of surface defects. However, magnetic perturbations break the time-reversal symmetry, enabling magnetic scattering and loss of spin coherence of the charge carriers. This intrinsic incompatibility precludes the design of magnetoelectronic devices based on the coupling between magnetic materials and topological surface states. We demonstrate that the magnetization coming from individual Co atoms deposited on the surface can disrupt the spin coherence of the carriers in the archetypal topological insulator Bi 2 Te 3 , while in Bi 2 Se 2 Te the spin texture remains unperturbed. This is concluded from the observation of elastic backscattering events in quasiparticle interference patterns obtained by scanning tunneling spectroscopy. The mechanism responsible for the protection is investigated by energy resolved spectroscopy and ab initio calculations, and it is ascribed to the distorted adsorption geometry of localized magnetic moments due to Se–Te disorder, which suppresses the Co hybridization with the surface states.

3D topological insulators↗

Gate-Induced Metal–Insulator Transition in MoS 2 by Solid Superionic Conductor LaF 3

Electric-double-layer (EDL) gating with liquid electrolyte has been a powerful tool widely used to explore emerging interfacial electronic phenomena. Due to the large EDL capacitance, a high carrier density up to 10 14 cm –2 can be induced, directly leading to the realization of field-induced insulator to metal (or superconductor) transition. However, the liquid nature of the electrolyte has created technical issues including possible side electrochemical reactions or intercalation, and the potential for huge strain at the interface during cooling. In addition, the liquid coverage of active devices also makes many surface characterizations and in situ measurements challenging. Here, we demonstrate an all solid-state EDL device based on a solid superionic conductor LaF 3 , which can be used as both a substrate and a fluorine ionic gate dielectric to achieve a wide tunability of carrier density without the issues of strain or electrochemical reactions and can expose the active device surface for external access. Based on LaF 3 EDL transistors (EDLTs), we observe the metal–insulator transition in MoS 2 . Interestingly, the well-defined crystal lattice provides a more uniform potential distribution in the substrate, resulting in less interface electron scattering and therefore a higher mobility in MoS 2 transistors. Finally, this result shows the powerful gating capability of LaF 3 solid electrolyte for new possibilities of novel interfacial electronic phenomena.

36 MATERIALS SCIENCE↗

Superconductor-Insulator Transitions in Exfoliated Bi 2 Sr 2 CaCu 2 O 8+δ Flakes

The recently developed solid electrolyte not only allows for substantial charge carrier modulation, which is crucial for realizing emergent quantum phenomena, but also offers a facile platform to integrate with surface sensitive probes, such as tunneling spectroscopy. Here, we apply this unique technique to address the superconductor-insulator transition (SIT) in mechanically exfoliated Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) by transport and tunneling measurements. Back-gating via the solid electrolyte engenders intercalation of lithium ions into BSCCO, inducing a reversible SIT. Through tunneling spectroscopy across a graphite (G)/BSCCO heterojunction, we further observe that a symmetric pseudo-gap persists deep in the insulating regime, indicative of a percolative transition. The combination of the field effect modulation and spectroscopic study is applicable to a large variety of two-dimensional (2D) materials for gaining deeper insights into the many-body physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Atomically Thin CrCl 3 : An In-Plane Layered Antiferromagnetic Insulator

The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date, the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. In this work, we demonstrate that atomically thin CrCl 3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is, the polarization is in the plane of each layer and has no preferred direction within it. Ligand-field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl 3 /graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance, we obtain an effective magnetic phase diagram for the bilayer. Our findings suggest that CrCl 3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices.

2D magnetic insulator↗

Electron Doping-Induced Metal–Insulator Transition in LaNiO 3 and Memory Devices

LaNiO 3 (LNO) is the only rare-earth nickelate that does not undergo a temperature-driven insulator-metal transition. Here, we report the successful deposition of epitaxial LNO thin films on LaAlO 3 substrates by a chemical solution deposition method. We report a metal-insulator transition driven by electron doping from hydrogen using catalytic Pd electrodes. A series of in-plane devices with LNO thin films and Pd-Au as the two working terminals were designed and fabricated by photolithography. Further, we report their resistance switching behavior and synaptic multiresistance states under voltage pulses. The results demonstrate the universality of electron doping-driven phase transitions in the rare-earth nickelates and their relevance to emerging memory and computing technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Tailoring Nanoporous Silica and Natural Straw Structural Insulation Composites

Nanoporous silica exhibits ultralow thermal conductivity as a result of its nanoscale pore size, high pore volume, and specific surface area. In this study, we report the self-assembled surfactant-templated synthesis of nanoporous silica, which is integrated with cellulose fibers derived from natural straw to manufacture high thermal insulation and mechanically robust nanocomposites. The nanocomposite shows a low thermal conductivity of 22.5 mW/(m·K), a compressive modulus of 0.93 MPa, and a hydrophobicity with a water contact angle of 125°. Moreover, we observed a marked reduction in water absorption capacity and a carbon footprint of 0.21 kg CO 2 equiv/kg. Here, this study provides a pathway toward the development of nanoporous structural insulation materials for energy-efficient building applications.

36 MATERIALS SCIENCE↗

Achieving Flat-on Primary Crystals by Nanoconfined Crystallization in High-Temperature Polycarbonate/Poly(vinylidene fluoride) Multilayer Films and Its Effect on Dielectric Insulation

To meet the stringent requirements of next-generation film capacitors for power electronics, multilayer films (MLFs) are fabricated with the advantage of achieving high temperature rating, high energy density, and reasonably low loss simultaneously. In this study, a high permittivity polar polymer, poly(vinylidene fluoride) (PVDF), is multilayered with a linear, low loss dielectric polymer such as high-temperature polycarbonate (HTPC). However, the dielectric loss of these MLFs was still high as compared with current state-of-the-art biaxially oriented polypropylene (BOPP) films. The goal of this work is to decrease the dielectric loss and enhance dielectric insulation by achieving flat-on primary PVDF crystals in MLFs via nanoconfined melt-recrystallization. Based on simultaneous small- and wide-angle X-ray scattering experiments, edge-on lamellar crystals were observed for all as-extruded MLFs, regardless of different PVDF layer thicknesses. However, after melting at 180 °C followed by recrystallization, flat-on primary crystals were successfully achieved when the PVDF layer thickness was below 39 nm. Above 78 nm for the PVDF layer, major edge-on primary crystals with minor flat-on secondary crystals were observed. Furthermore, from leakage current, breakdown, lifetime, and electric displacement-electric field loop studies, MLFs with the flat-on primary crystals exhibited reduced loss and enhanced dielectric insulation as compared to as-extruded MLFs and those with edge-on primary/flat-on secondary crystals. This was attributed to the effective blockage of charge carriers by the flat-on PVDF primary crystals and their reduced ferroelectric switching.

36 MATERIALS SCIENCE↗

Nanoscale Control of Intrinsic Magnetic Topological Insulator MnBi 2 Te 4 Using Molecular Beam Epitaxy: Implications for Defect Control

Intrinsic magnetic topological insulators have emerged as a promising platform to study the interplay between the topological surface states and ferromagnetism. This unique interplay can give rise to a variety of exotic quantum phenomena, including the quantum anomalous Hall effect and axion insulating states. Here, in this study, utilizing molecular beam epitaxy (MBE), we present a comprehensive study of the growth of MnBi 2 Te 4 thin films on Si (111), epitaxial graphene, and highly ordered pyrolytic graphite substrates. By combining a suite of in situ characterization techniques, we obtain critical insights into the nanoscale control of MnBi 2 Te 4 epitaxial growth. First, we extract the free energy landscape for the epitaxial relationship as a function of the in-plane angular distribution. Then, by employing an optimized layer-by-layer growth, we determine the chemical potential and Dirac point of the thin film at different thicknesses and how this quantity is manifested by the dopant compensation from different antisite defects. Overall, these results establish a foundation for understanding the growth kinetics of MnBi 2 Te 4 and pave the way for future applications of MBE-grown thin films in emerging topological quantum materials.

36 MATERIALS SCIENCE↗

Gate-Controlled Metal–Insulator Transition in TiS 3 Nanowire Field-Effect Transistors

We explore the electrical characteristics of TiS 3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal–insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ~20–30 cm 2 /(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<~220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS 3 nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB 6

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB 6 . At low temperatures when only surface carriers are present, a clear spin signal is observed. Moreover, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6.

36 MATERIALS SCIENCE↗