Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GaP”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,261 records · Page 70

Doped NiO: The mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole and electron doping at low doping levels such that the system remains insulating using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole doping than under electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction-band edge are indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard U interaction even though the global band gap is predominantly a charge-transfer-type gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Symmetry-breaking polymorphous descriptions for correlated materials without interelectronic U

Correlated materials with open-shell d- and f-ions having degenerate band edge states show a rich variety of interesting properties ranging from metal-insulator transition to unconventional superconductivity. The textbook view for the electronic structure of these materials is that mean-field approaches are inappropriate, as the interelectronic interaction U is required to open a band gap between the occupied and unoccupied degenerate states while retaining symmetry. We show that the latter scenario often defining what Mott insulators are, is in fact not needed for the 3d binary oxides MnO, FeO, CoO, and NiO. The mean-field-like band theory can indeed lift such degeneracies in the binaries when nontrivial unit cell representations (polymorphous networks) are allowed to break symmetries, in conjunction with a recently developed non-empirical exchange and correlation density-functional without an on-site interelectronic interaction U. We explain how density-functional theory (DFT) in the polymorphous representation achieves band gap opening in correlated materials through a separate mechanism to the Mott-Hubbard approach. Here, we show the method predicts magnetic moments and gaps for the four binary monoxides in both the antiferromagnetic and paramagnetic phases, offering an effective alternative to symmetry-conserving approaches for studying a range of functionalities in open d- and f-shell complex materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Prediction of superconductivity and topological aspects in single-layer β -Bi 2 Pd

Topological superconductors, characterized by topologically nontrivial states residing in a superconducting gap, are a recently discovered class of materials having Majorana fermions. The interplay of superconductivity and topological states gives rise to opportunities for achieving such topological superconductors in condensed matter systems. Up to now, several single-material topological superconductors in this form have been theoretically predicted and experimentally confirmed. Here, using the first-principles calculations, we study the superconducting single-layer β-Bi 2 Pd. In this work, the electronic density of states near Fermi level of this monolayer are dominated by the Bi-p and Pd-d orbitals, forming a two-band Fermi surface with multiclass sheets. The presence of soft phonon bands, in cooperation with the electron susceptibility, accounts for electron-phonon superconductivity of single-layer β-Bi 2 Pd. With the centrosymmetric structure, single-layer β-Bi 2 Pd possesses a continuous gap over the whole Brillouin zone and topological Dirac-like states at its one-dimensional boundary. The present findings would lead to the expectation of one-dimensional topological superconductivity and Majorana bound states in a monolayer candidate of β-Bi 2 Pd with intrinsic full-gap superconductivity.

36 MATERIALS SCIENCE↗

Quasiparticle self-consistent $GW$ energy band calculations for $\mathrm{Ge_3N_4}$ phases

Quasiparticle self-consistent GW (G Green's function, W screened Coulomb interaction) band structure calculations are presented for the α, β, and γ phases of Ge 3 N 4 . The GW corrections to the gap are substantial and the gaps are found to be 3.85, 3.86, and 3.56 eV for α, β, γ respectively, at the experimental lattice constants. Only the β phase has a direct gap. The α and β phases, which are closely related to each other in crystal structure, are consequently also found to have rather similar band structures. Nonetheless, some significant differences are found near the valence band maximum, which are related to the different interlayer interactions in the c direction. In the cubic spinel phase, the conduction band minima of s and p character are found close to each other. Effective masses are calculated for the relevant valence and conduction band edges and for the cubic case analyzed in terms of the Kohn-Luttinger effective Hamiltonian. Finally, the optical response functions from direct interband transitions are calculated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Second-order nonlinear optical and linear ultraviolet-visible absorption properties of the type-II multiferroic candidates RbFe( A O 4 ) 2 ( A = Mo, Se, S)

Motivated by the search for type-II multiferroics, in this work, we present a comprehensive optical study of a complex oxide family of type-II multiferroic candidates: RbFe(MoO 4 ) 2 , RbFe(SeO 4 ) 2 , and RbFe(SO 4 ) 2 .We employ rotationalanisotropy second harmonic generation spectroscopy (RA SHG), a technique sensitive to point symmetries, to address discrepancies in literature-assigned point/space groups and to identify the correct crystal structures. At room temperature we find that our RA SHG patterns rotate away from the crystal axes in RbFe(AO 4 ) 2 ( A = Se, S), which identifies the lack of mirror symmetry and in-plane two-fold rotational symmetry. Also, the SHG efficiency of RbFe(SeO 4 ) 2 is two orders of magnitude stronger than RbFe(AO 4 )2 ( A = Mo, S), which suggests broken inversion symmetry. Additionally, we present temperature-dependent linear optical characterizations near the band edge of this family of materials using ultraviolet-visible absorption spectroscopy. Included is experimental evidence of the band gap energy and band gap transition type for this family. Subband gap absorption is also presented, which reveals prominent optical transitions, some with an unusual central energy temperature dependence. Furthermore, we find that by substituting the A site in RbFe(AO 4 ) 2 ( A = Mo, Se, S), the aforementioned transitions are spectrally tunable. Finally, we discuss the potential origin and impact of these tunable transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

GW band structure of monolayer MoS 2 using the SternheimerGW method and effect of dielectric environment

Monolayers of transition-metal dichalcogenides (TMD) hold great promise as future nanoelectronic and optoelectronic devices. An essential feature for achieving high device performance is the use of suitable supporting substrates, which can affect the electronic and optical properties of these two-dimensional (2D) materials. Here, we perform many-body GW calculations using the SternheimerGW method to investigate the quasiparticle band structure of monolayer MoS 2 subject to an effective dielectric screening model, which is meant to approximately describe substrate polarization in real device applications. We show that, within this model, the dielectric screening has a sizeable effect on the quasiparticle band gap, for example the gap renormalization is as large as 250 meV for MoS 2 with model screening corresponding to SiO 2 . Within the G 0 W 0 approximation, we also find that the inclusion of the effective screening induces a direct band gap, in contrast to the unscreened monolayer. We also find that the dielectric screening induces an enhancement of the carrier effective masses by as much as 27% for holes, shifts plasmon satellites, and redistributes quasiparticle weight. Our results highlight the importance of the dielectric environment in the design of 2D TMD-based devices.

36 MATERIALS SCIENCE↗

Harmonic generation predominantly from a single spin channel in a half metal

Harmonic generation in atoms and molecules has reshaped our understanding of ultrafast phenomena beyond the traditional nonlinear optics and has launched attosecond physics. Harmonics from solids represent a new frontier, where both majority and minority spin channels contribute to harmonics. This is true even in a ferromagnet whose electronic states are equally available to optical excitation. In this work, we demonstrate that harmonics can be generated {mostly} from a single spin channel in half metallic chromium dioxide. An energy gap in the minority channel greatly reduces the harmonic generation, so harmonics predominantly emit from the majority channel, with a small contribution from the minority channel. However, this is only possible when the incident photon energy is well below the energy gap in the minority channel, so all the transitions in the minority channel are virtual. The onset of the photon energy is determined by the transition energy between the dipole-allowed transition between the O-$2p$ and Cr-$3d$ states. Harmonics mainly from a single spin channel can be detected, regardless of laser field strength, as far as the photon energy is below the minority band energy gap. This prediction should be tested experimentally

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Open momentum space method for the Hofstadter butterfly and the quantized Lorentz susceptibility

Here we develop a generic k ∙ p open momentum space method for calculating the Hofstadter butterfly of both continuum (moiré) models and tight-binding models, where the quasimomentum is directly substituted by the Landau level (LL) operators. By taking a LL cutoff (and a reciprocal lattice cutoff for continuum models), one obtains the Hofstadter butterfly with in-gap spectral flows. For continuum models such as the moiré model for twisted bilayer graphene, our method gives a sparse Hamiltonian, making it much more efficient than existing methods. The spectral flows in the Hofstadter gaps can be understood as edge states on a momentum space boundary, from which one can determine the two integers (t ν , s ν ) of a gap ν satisfying the Diophantine equation. The spectral flows can also be removed to obtain a clear Hofstadter butterfly. While t ν is known as the Chern number, our theory identifies s ν as a dual Chern number for the momentum space, which corresponds to a quantized Lorentz susceptibility γ xy = eBs ν .

2-dimensional systems↗

Collective excitations and quantum incompressibility in electron-hole bilayers

In this study, we apply quantum continuum mechanics to the calculation of the excitation spectrum of a coupled electron-hole bilayer. The theory expresses excitation energies in terms of ground-state intra- and interlayer pair correlation functions, which are available from quantum Monte Carlo calculations. The final formulas for the collective modes deduced from this approach coincide with the formulas obtained in the “quasilocalized particle approximation” by Kalman et al. [G. Kalman, V. Valtchinov, and K. I. Golden, Phys. Rev. Lett. 82 , 3124 (1999) ], and likewise the theory predicts the existence of gapped excitations in the charged channel, with the gap arising from electron-hole correlation. An immediate consequence of the gap is that the static density-density response function of the charged channel vanishes as q 2 for wave vector q → 0 , rather than linearly in q , as commonly expected. In this sense, the system is incompressible . This feature, which has no analog in the classical electron-hole plasma, is consistent with the existence of an excitonic ground state and implies the existence of a discontinuity in the chemical potential of electrons and holes when the numbers of electrons and holes are equal. It should be experimentally observable by monitoring the densities of electrons and holes in response to potentials that attempt to change these densities in opposite directions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantum oscillation of thermally activated conductivity in a monolayer WTe 2 -like excitonic insulator

Recently, quantum oscillation of the resistance in insulating monolayer WTe 2 was reported. An explanation in terms of gap modulation in the hybridized Landau levels of an excitonic insulator was also proposed by one of us. However, the previous picture of gap modulation in the Landau levels spectrum was built on a pair of well nested electron and hole Fermi surfaces, while the monolayer WTe 2 has one hole and two electron Fermi pockets with relative anisotropy. In this work we demonstrate that for system like monolayer WTe 2 , the excitonic insulating state arising from the coupled one hole and two electron pockets possesses a finite region in interaction parameter space that shows gap modulation in a magnetic field. In this region, the thermally activated conductivity displays the 1/B periodic oscillation and it can further develop into discrete peaks at low temperature, in agreement with the experimental observation. We show that the relative anisotropy of the bands is a key parameter and the quantum oscillations decrease rapidly if the anisotropy increases further than the realistic value for monolayer WTe 2 .

2-dimensional systems↗

Full versus quasiparticle self-consistency in vertex-corrected GW approaches

Here, using seven semiconductors/insulators with band gaps covering the range from 1 eV to 10 eV we systematically explore the performance of two different variants of self-consistency associated with famous Hedin's system of equations: the full self-consistency and the so called quasi-particle approximation to it. The pros and cons of these two variants of self-consistency are sufficiently well documented in literature for the simplest GW approximation to the Hedin's equations. Our study, therefore, aims primarily at the level of theory beyond GW approximation, i.e. at the level of theory which includes vertex corrections. Whereas quasi-particle self-consistency has certain advantages at GW level (well known fact), the situation becomes quite different when vertex corrections are included. In the variant with full self-consistency, vertex corrections (both for polarizability and for self energy) systematically reduce the calculated band gaps making them closer to the experimental values. In the variant with quasi-particle self-consistency, however, an inclusion of the same diagrams has considerably larger effect and calculated band gaps become severely underestimated. Different effect of vertex corrections in two variants of self-consistency can be related to the Z-factor cancellation which plays positive role in quasi-particle self-consistency at GW level of theory but appears to be destructive for the quasi-particle approximation when higher order diagrams are included. Second result of our study is that we were able to reproduce the results obtained with the Questaal code using our FlapwMBPT code when the same variant of self-consistency (quasi-particle) and the same level of vertex corrections (for polarizability only, static approximation for screened interaction, and Tamm-Dancoff approximation for the Bethe-Salpeter equation) are used.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Possible unconventional pairing in ( Ca , Sr ) 3 ( Ir , Rh ) 4 Sn 13 superconductors revealed by controlling disorder

Here we study the evolution of temperature-dependent resistivity with added pointlike disorder induced by 2.5 MeV electron irradiation in stoichiometric compositions of the “3-4-13” stannides, (Ca,Sr) 3 (Ir,Rh) 4 Sn 13 . Three of these cubic compounds exhibit a proposed microscopic coexistence of charge density wave (CDW) order and superconductivity (SC), while Ca 3 Rh 4 Sn 13 does not develop CDW order. As expected, the CDW transition temperature T CDW is universally suppressed by irradiation in all three compositions. The superconducting transition temperature, T c , behaves in a more complex manner. In Sr 3 Rh 4 Sn 13 , it increases initially in a way consistent with a direct competition of CDW and SC, but quickly saturates at higher irradiation doses. In the other three compounds, T c is monotonically suppressed by irradiation. The strongest suppression is found in Ca 3 Rh 4 Sn 13 , which does not have CDW order. We further examine this composition by measuring the London penetration depth λ(T), from which we derive the superfluid density. The result unambiguously points to a weak-coupling, full single gap, isotropic superconducting state. Therefore we must explain two seemingly incompatible experimental observations: a single isotropic superconducting gap and a significant suppression of T c by nonmagnetic disorder. We conduct a quantitative theoretical analysis based on a generalized Anderson theorem which points to an unconventional multiband s +– -pairing state where the sign of the order parameter is different on one (or a small subset) of the smaller Fermi surface sheets but remains isotropic and overall fully gapped.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electronic structure of intrinsic defects in c -gallium nitride: Density functional theory study without the jellium approximation

Here, we report the first nonjellium, systematic, density functional theory (DFT) study of intrinsic and extrinsic defects and defect levels in zinc-blende (cubic) gallium nitride. We use the local moment counter charge (LMCC) method, the standard Perdew-Becke-Ernzerhoff (PBE) exchange-correlation potential, and two pseudopotentials, where the Ga 3$\textit{d}$ orbitals are either in the core ($d^0$) or explicitly in the valence set ($d^{10}$). We studied 64, 216, 512, and 1000 atom supercells, and demonstrated convergence to the infinite limit, crucial for delineating deep from shallow states near band edges, and for demonstrating the elimination of finite cell-size errors. Contrary to common claims, we find that exact exchange is not required to obtain defect levels across the experimental band gap. As was true in silicon, silicon carbide, and gallium arsenide, the extremal LMCC defect levels of the aggregate of defects yield an effective LMCC defect band gap that is within 10% of the experimental gap (3.3 eV) for both pseudopotentials. We demonstrate that the gallium vacancy is more complicated than previously reported. There is dramatic metastability–a nearest-neighbor nitrogen atom shifts into the gallium site, forming an antisite, nitrogen vacancy pair, which is more stable than the simple vacancy for positive charge states. Our assessment of the $d^0$ and $d^{10}$ pseudopotentials yields minimal differences in defect structures and defect levels. The better agreement of the $d^0$ lattice constant with experiment suggests that the more computationally economical $d^0$ pseudopotentials are sufficient to achieve the fidelity possible within the physical accuracy of DFT, and thereby enable calculations in larger supercells necessary to demonstrate convergence with respect to finite size supercell errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Intrinsic and doping-enhanced superconductivity in monolayer 1 H − TaS 2 : Critical role of charge ordering and spin-orbit coupling

The interplay of superconductivity with charge density wave (CDW) in metallic transition-metal dichalcogenides has been widely debated, and viable strategies manipulating these quantum states in the two-dimensional (2D) limit remain unclear. Using the ab initio anisotropic Migdal-Eliashberg theory, we successfully explain the superconductivity observed in monolayer 1H-TaS 2 by simultaneously determining its precise CDW structure and treating the marked modification of electron-phonon interaction and critical temperature T c by spin-orbit coupling effects. With this paradigm, we further show that electron doping weakens the CDW order leading to increased T c up to 11 K, along with a single-gap to two-gap superconductivity transition due to the suppression of the CDW gap. By contrast, a low hole doping barely affects the CDW but still yields a significantly enhanced superconducting order, implying their good coexistence. Combined with the synergistic behavior of CDW and superconductivity, which cooperate upon TaS 2 thickness reduction causing an unusual rise of T c , our results unravel diversified interactions between the two collective orders in ultrathin TaS 2 , being competition, coexistence or cooperation depending on external stimuli, which provide key clues for controlling correlated states in devices based on 2D CDW superconductors.

36 MATERIALS SCIENCE↗

Composition-transferable machine learning potential for LiCl-KCl molten salts validated by high-energy x-ray diffraction

Unraveling the liquid structure of multicomponent molten salts is challenging due to the difficulty in conducting and interpreting high-temperature diffraction experiments. Here, motivated by this challenge, we developed composition-transferable Gaussian approximation potential (GAP) for molten LiCl-KCl. A DFT-SCAN accurate GAP is active-learned from only ~1100 training configurations drawn from 10 unique mixture compositions enriched with metadynamics. The GAP-computed structures show strong agreement across high-energy x-ray diffraction experiments, including for a eutectic not explicitly included in model training, thereby opening the possibility of composition discovery.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A-type antiferromagnetic order in semiconducting EuMg 2 Sb 2 single crystals

Eu-based Zintl-phase materials EuA 2 Pn 2 (A = Mg, In, Cd, Zn; Pn = Bi, Sb, As, P) have generated significant recent interest owing to the complex interplay of magnetism and band topology. Here, we investigated the crystallographic, magnetic, and electronic properties of the layered Zintlphase single crystals of EuMg 2 Sb 2 with the trigonal CaAl 2 Si 2 crystal structure (space group $P\bar{3}m1$). Electrical resistivity measurements complemented with angle-resolved photoemission spectroscopy (ARPES) studies and density functional theory (DFT) calculations find an activated behavior with intrinsic conductivity at high temperatures indicating a semiconducting electronic ground state with a narrow energy gap of 370 meV. Magnetic susceptibility and zero-field heat capacity measurements indicate that the compound undergoes antiferromagnetic (AFM) ordering at the Néel temperature T N = 8.0(2) K. Here, zero-field neutron-diffraction measurements reveal that the AFM ordering is A-type where the Eu spins (Eu 2+ , S = 7/2) arranged in ab-plane layers are aligned ferromagnetically in the ab plane and the Eu spins in adjacent layers are aligned antiferromagnetically. Eu-moment reorientation within the ab planes in the trigonal AFM domains associated with a very weak inplane magnetic anisotropy is also evident below T N at low fields < 0.05 T. Although isostructural semimetallic EuMg 2 Bi 2 is reported to host Dirac surface states, the observation of narrow-gap semiconducting behavior in EuMg 2 Sb 2 implies a strong role of spin-orbit coupling (SOC) in tuning the electronic states of these materials. Our DFT studies also suggest, besides the SOC, the more electronegative and smaller Sb than Bi shifts the low-lying conduction bands along the Γ-A direction to higher energy, resulting in an indirect bulk band gap between the Γ and M points for EuMg 2 Sb 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Topological Electronic Structure Evolution with Symmetry Breaking Spin Reorientation in (Fe 1–x Co x )Sn

Topological materials hosting kagome lattices have drawn considerable attention due to the interplay between topology, magnetism, and electronic correlations. The (Fe 1–x Co x )Sn system not only hosts a kagome lattice but has a tunable symmetry-breaking magnetic moment with temperature and doping. In this study, angle-resolved photoemission spectroscopy and first-principles calculations are used to investigate the interplay between the topological electronic structure and varying magnetic moment from the planar to axial antiferromagnetic phases. Here, evidence for a theoretically predicted gap at the Dirac point is revealed in the low-temperature axial phase, but no gap opening is observed across a temperature-dependent magnetic phase transition. However, topological surface bands are observed to shift in energy as the surface magnetic moment is reduced or becomes disordered over time during experimental measurements. The shifting surface bands may preclude the determination of a temperature-dependent bulk gap, but this highlights the intricate connections between magnetism and topology with a surface/bulk dichotomy that can affect material properties and their interrogation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quasiparticle excitations in a one-dimensional interacting topological insulator: Application for dopant-based quantum simulation

Here, we study the effects of electron-electron interactions on the charge excitation spectrum of the spinful Su-Schrieffer-Heeger (SSH) model, a prototype of a one-dimensional bulk obstructed topological insulator. In view of recent progress in the fabrication of dopant-based quantum simulators we focus on experimentally detectable signatures of interacting topology in finite lattices. To this end we use Lanczos-based exact diagonalization to calculate the single-particle spectral function in real space which generalizes the local density of states to interacting systems. Its spatial and spectral resolution allows for the direct investigation and identification of edge states. By studying the noninteracting limit, we demonstrate that the topological in-gap states on the boundary are robust against both finite-size effects as well as random bond and onsite disorder which suggests the feasibility of simulating the SSH model in engineered dopant arrays in silicon. While edge excitations become zero-energy spinlike for any finite interaction strength, our analysis of the spectral function shows that the single-particle charge excitations are gapped out on the boundary. Despite the loss of topological protection, we find that these edge excitations are quasiparticlelike as long as they remain within the bulk gap. Above a critical interaction strength of U c ≈5t these quasiparticles on the boundary lose their coherence which is explained by the merging of edge and bulk states. This is in contrast to the many-body edge excitations which survive the limit of strong coupling, as established in the literature. Our findings show that for moderate repulsive interactions the nontrivial phase of the interacting SSH model can be detected through remnant signatures of topological single-particle states using single-particle local measurement techniques such as scanning tunneling spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗