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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
NASA NTRS2016

Space Launch System Base Heating Test: Tunable Diode Laser Absorption Spectroscopy

This paper describes the Tunable Diode Laser Absorption Spectroscopy (TDLAS) measurement of several water transitions that were interrogated during a hot-fire testing of the Space Launch Systems (SLS) sub-scale vehicle installed in LENS II. The temperature of the recirculating gas flow over the base plate was found to increase with altitude and is consistent with CFD results. It was also observed that the gas above the base plate has significant velocity along the optical path of the sensor at the higher altitudes. The line-by-line analysis of the H2O absorption features must include the effects of the Doppler shift phenomena particularly at high altitude. The TDLAS experimental measurements and the analysis procedure which incorporates the velocity dependent flow will be described.

Parker, Ron↗
NASA NTRS2016

Space Launch System Base Heating Test: Tunable Diode Laser Absorption Spectroscopy

This paper describes the Tunable Diode Laser Absorption Spectroscopy (TDLAS) measurement of several water transitions that were interrogated during a hot-fire testing of the Space Launch Systems (SLS) sub-scale vehicle installed in LENS II. The temperature of the recirculating gas flow over the base plate was found to increase with altitude and is consistent with CFD results. It was also observed that the gas above the base plate has significant velocity along the optical path of the sensor at the higher altitudes. The line-by-line analysis of the H2O absorption features must include the effects of the Doppler shift phenomena particularly at high altitude. The TDLAS experimental measurements and the analysis procedure which incorporates the velocity dependent flow will be described.

Parker, Ron↗
NASA NTRS2015

Development and Preliminary Tests of an Open-Path Airborne Diode Laser Absorption Instrument for Carbon Dioxide

Carbon dioxide (CO2) is well known for its importance as an atmospheric greenhouse gas, with many sources and sinks around the globe. Understanding the fluxes of carbon into and out of the atmosphere is a complex and daunting challenge. One tool applied by scientists to measure the vertical flux of CO2 near the surface uses the eddy covariance technique, most often from towers but also from aircraft flying specific patterns over the study area. In this technique, variations of constituents of interest are correlated with fluctuations in the local vertical wind velocity. Measurement requirements are stringent, particularly with regard to precision, sensitivity to small changes, and temporal sampling rate. In addition, many aircraft have limited payload capability, so instrument size, weight, and power consumption are also important considerations. We report on the development and preliminary application of an airborne sensor for the measurement of atmospheric CO2. The instrument, modeled on the successful DLH (Diode Laser Hygrometer) series of instruments, has been tested in the laboratory and on the NASA DC-8 aircraft. Performance parameters such as accuracy, precision, sensitivity, specificity, and temporal response are discussed in the context of typical atmospheric variability and suitability for flux measurement applications. On-aircraft, in-flight data have been obtained and are discussed as well. Performance of the instrument has been promising, and continued flight testing is planned during 2016.

Diskin, Glenn S.↗
NASA NTRS1995

A theoretical analysis of steady-state photocurrents in simple silicon diodes.

A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems...

Edmonds, Larry↗
NASA NTRS2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.

Heavy ions↗
NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗
NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.

Focused X-ray↗
NASA NTRS2022

Mechanisms of Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Single Event Transients in an Epitaxial Silicon Diode

Heavy ion-, focused X ray-, and pulsed laser induced single event effects in an epitaxial silicon diode were simulated using Sentaurus Technology Computer Aided Design (TCAD). The variation of the potential with time in simulation agrees with previous experimental data, which suggests that the different radiation sources result in different amounts of potential modulation. The charge generation spatial profile strongly affects the potential modulation. The longitudinal range and starting location of generated charge most strongly impacts the amount of potential modulation, while the radial width has a slight effect, and the temporal duration of charge injection has negligible impact on potential modulation

Kaitlyn L. Ryder↗
NASA NTRS2018

Technology Demonstration Mission (TDM) evolvable Cryogenics (eCryo) Project Structural Heat Intercept, Insulation and Vibration Evaluation Rig (SHIIVER) Diode Rake Assembly and Installation

NASA designed, assembled and installed a temperature diode rake into the SHIIVER test article for use of measuring liquid and gaseous hydrogen temperatures. Several special steps were taken to ensure that fluid temperatures were measured as opposed to structural temperatures. This document outlines design practices and methodologies that have become standard practice at Glenn Research Center to ensure the measurement of fluid temperatures for cryogenic systems research.

Cryogenic Fluid Management↗
DOE OSTI2020

Deep photoenhanced wet material etching using high-power ultraviolet light emitting diodes

Methods and systems for etching a substrate using photoenhanced wet etching techniques are described. At least one light emitting diode source is used to create a high intensity of ultraviolet light at the surface of the substrate or at one or more layers formed on the substrate. Etching rates in GaN substrates and GaN layers are improved by an order of magnitude over conventional systems. Systems and methods for forming a device structure free of a substrate are described. The device structure is grown or applied over a release layer on a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device structure from the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Organic light-emitting diodes comprising grating structures and light extraction layers

Embodiments described herein generally relate to organic light-emitting diodes (OLEDs) comprising a substrate, a light extraction layer, a first electrode, one or more organic layers, and a second electrode. In some embodiments, the light extraction layer is positioned between the substrate and the first electrode. According to some embodiments, an interface between the light extraction layer and the first electrode comprises a grating structure. The grating structure may, in certain cases, promote outcoupling of light generated within the OLED (e.g., through diffraction).

So, Franky Fat Kei↗
DOE OSTI2021

Organic light emitting diode with split emissive layer

An organic light emitting diode (OLED) device includes an emissive layer having a first sublayer with a first emitter as a dopant, a second sublayer with a second emitter as a dopant, and a third sublayer with a third emitter as a dopant. The second sublayer is between the first sublayer and the third sublayer. A concentration of the first emitter in the first sublayer exceeds a concentration of the third emitter in the third sublayer, and the concentration of the third emitter in the third sublayer exceeds a concentration of the second emitter in the second sublayer.

Li, Jian-Jun↗
DOE OSTI2023

Engineered current-density profile diode laser

The present technology can be used to control the current injection profile in the longitudinal direction of a high-power diode laser in order to optimize current densities as a function of position in the cavity to promote higher reliable output power and increase the electrical to optical conversion efficiency of the device beyond the level which can be achieved without application of this technique. This approach can be utilized, e.g., in the fabrication of semiconductor laser chips to improve the output power and wall plug efficiency for applications requiring improved performance operation.

Leisher, Paul O.↗