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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,261 records · Page 70
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Atomic layer deposition of (K,Na)(Nb,Ta)O{sub 3} thin films

Thin films of complex alkali oxides are frequently investigated due to the large range of electric effects that are found in this class of materials. Their piezo- and ferroelectric properties also place them as sustainable lead free alternatives in optoelectronic devices. Fully gas-based routes for deposition of such compounds are required for integration into microelectronic devices that need conformal thin films with high control of thickness- and composition. The authors here present a route for deposition of materials in the (K,Na)(Nb,Ta)O{sub 3}-system, including the four end members NaNbO{sub 3}, KNbO{sub 3}, NaTaO{sub 3}, and KTaO{sub 3}, using atomic layer deposition with emphasis on control of stoichiometry in such mixed quaternary and quinary compunds.

42 ENGINEERING↗
DOE OSTI2018

Systems and related methods for determining self-discharge currents and internal shorts in energy storage cells

Systems and methods for determining self-discharge currents in an energy storage cell and detecting internal shorts are disclosed. A system includes a DC voltage source configured to provide a constant test voltage selected to be less than an open-circuit voltage of an energy storage cell to the energy storage cell. The system also includes a current measuring device operably coupled between the DC voltage source and the energy storage cell, and control circuitry operably coupled to the current measuring device. A method includes applying the constant test voltage, and measuring the test current flowing between the DC voltage source and the energy storage cell until after the test current switches from a negative current to a positive current. The method also includes determining a self-discharge current of the energy storage cell by analyzing the measured test current with computational models that capture physical processes tied to the test methods.

25 ENERGY STORAGE↗
DOE OSTI2016

Electrically controlled band gap and topological phase transition in two-dimensional multilayer germanane

Electrically controlled band gap and topological electronic states are important for the next-generation topological quantum devices. In this letter, we study the electric field control of band gap and topological phase transitions in multilayer germanane. We find that although the monolayer and multilayer germananes are normal insulators, a vertical electric field can significantly reduce the band gap of multilayer germananes owing to the giant Stark effect. The decrease of band gap eventually leads to band inversion, transforming them into topological insulators with nontrivial Z{sub 2} invariant. The electrically controlled topological phase transition in multilayer germananes provides a potential route to manipulate topologically protected edge states and design topological quantum devices. This strategy should be generally applicable to a broad range of materials, including other two-dimensional materials and ultrathin films with controlled growth.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Recent progress in the development of liquid metal plasma facing components for magnetic fusion devices

One of the most critical challenges for future fusion reactors is to develop longevity plasma-facing components (PFCs) exposed to extremely high heat and neutron loads. As opposed to those employing solid metals, PFCs with flowing liquid metals (LM) have shown self-healing, heat removal and good impurity control capabilities, all essential to fusion devices. Recently, significant progress in LM-PFC development has been reported globally, with data from several magnetic fusion devices. These studies reveal that LM-PFCs can endure extreme heat fluxes while maintaining plasma compatibility. New design concepts have been proposed and numerically analyzed, advancing models for liquid PFCs in future reactors. Despite existing technical challenges, these developments suggest that LM-PFCs hold promise for future fusion applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Advances in terahertz solid-state physics and devices

Terahertz (THz) science and technology have attracted tremendous attention owing to their potential applications in areas including high-speed communications, nondestructive evaluation, biological and medical sensing, and national security.1,2 Terahertz waves bridge electronics and photonics, as well as classical and quantum physics, making them equally attractive for fundamental studies of novel physical phenomena. To realize a broad range of real terahertz applications, it is essential to develop compact solid- state devices for terahertz sources, detectors, modulators, and compact systems. These devices often employ quantum materials and heterostructures and can incorporate other features including carrier transfer using atomic layer epitaxy, micro- and electromechanical systems, plasmonic resonators, and metamaterials. To optimize these devices, we have to understand and control ultrafast carrier dynamics in these advanced materials. Furthermore, we have organized a Special Topic in the Journal of Applied Physics to highlight the state-of-the-art in terahertz solid-state devices while also unveiling the properties of these materials on an ultrafast timescale.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

MARIAH PCAP data for Validation Demonstration

This dataset holds simulated PCAP (packet capture) data from the SCEPTRE validation demonstration model as a set of pairwise communications between devices via specific protocols. All connections should be assumed to be symmetric, as this data is an aggregation of the true PCAP. A mapping is also provided associating each IP address with its true device type.

cyber-physical system↗
DOE OSTI2022

A review of zirconia oxygen, NO x , and mixed potential gas sensors – History and current trends

Zirconia-based electrochemical sensors have revolutionized oxygen monitoring and combustion control. Here, these robust, solid-state devices are found in virtually every internal combustion engine today providing feedback information for tight air to fuel ratio control thus minimizing unwanted emissions and improving engine efficiency. Variations on the sensor design and operational mode enable the measurement of nitrogen oxides to part per million levels, providing control information for exhaust after-treatment systems. Emerging designs include the development of "gas analyzers on a chip" capable of monitoring oxygen, carbon monoxide, nitrogen oxides, ammonia and hydrocarbons.

47 OTHER INSTRUMENTATION↗
DOE OSTI2016

Advanced WEC Dynamics and Controls, Test 1

Numerous studies have shown that advanced control of a wave energy converter's (WEC's) power take off (PTO) can provide significant increases (on the order of 200-300%) in WEC energy absorption. Transitioning these control approaches from simplified paper studies to application in full-scale devices remains an open and extremely challenging problem will be central to creating economically competitive WECs and delivering clean renewable energy to the US electrical grid. The Advanced WEC Dynamics and Controls project is targeted on assisting WEC developers to apply novel control systems for their devices and thus achieving major increases in performance and economic viability. The success of any control strategy is based directly upon the availability of a reduced-order model with the ability to accurately capture the dynamics of the system with sufficient accuracy. A model-scale WEC was designed and fabricated for use in studies to advance the state-of-the-art in WEC controls. This test, which is the first in a series of planned tests, focused on system identification (system ID) and model validation.

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

Wave Tank Testing Report for Controls Validation of a Heaving Point Absorber

The core objectives of this project is to improve the power capture of three different wave energy conversion (WEC) devices by more than 50% using an advanced control system and validate the attained improvements using wave tank and full scale testing. In parallel, we will bring along the development of a wave prediction system that is required to enable effective control and test it at full scale. The purposes of this report are to: 1. Plan and document the 1/25th scale device testing at the wave-tank facility; 2. Document the test article, setup and methodology, sensor and instrumentation, mooring, electronics, wiring, and data flow and quality assurance; 3. Communicate the testing results between the associated members; 4. Facilitate reviews that will help to ensure all aspects (risk, safety, testing procedures, etc.); 5. Provide a systematic guide to setting up, executing and decommissioning the experiment.

16 TIDAL AND WAVE POWER↗
DOE OSTI2015

LaAlO{sub 3} thickness window for electronically controlled magnetism at LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces

Complex-oxide heterostructures exhibit rich physical behavior such as emergent conductivity, superconductivity, and magnetism that are intriguing for scientific reasons as well as for potential technological applications. It was recently discovered that in-plane magnetism at the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface can be electronically controlled at room temperature. Here, we employ magnetic force microscopy to investigate electronically controlled ferromagnetism at the LAO/STO interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c. Magnetic signatures are observed only within a thickness window 8 u.c. ≤ t ≤ 25 u.c. Within this window, the device capacitance corresponds well to the expected geometric value, while for thicknesses outside this window, the capacitance is strongly suppressed. The ability to modulate electronic and magnetic properties of LAO/STO devices depends on the ability to control carrier density, which is in turn constrained by intrinsic tunneling mechanisms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe 3- x GeTe 2 and the ferroelectric In 2 Se 3 . It is observed that gate voltages applied to the Fe 3- x GeTe 2 /In 2 Se 3 heterostructure device modulate the magnetic properties of Fe 3- x GeTe 2 with significant decrease in coercive field for both positive and negative voltages. Raman spectroscopy on the heterostructure device shows voltage-dependent increase in the in-plane In 2 Se 3 and Fe 3- x GeTe 2 lattice constants for both voltage polarities. Thus, the voltage-dependent decrease in the Fe 3- x GeTe 2 coercive field, regardless of the gate voltage polarity, can be attributed to the presence of in-plane tensile strain. This is supported by density functional theory calculations showing tensile-strain-induced reduction of the magnetocrystalline anisotropy, which in turn decreases the coercive field. Our results demonstrate an effective method to realize low-power voltage-controlled vdW spintronic devices utilizing the magnetoelectric effect in vdW ferromagnetic/ferroelectric heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Will Stochastic Devices Play Nice With Others in Neuromorphic Hardware?: There’s More to a Probabilistic System Than Noisy Devices

Achieving brain-like efficiency in computing requires a co-design between the development of neural algorithms, brain-inspired circuit design, and careful consideration of how to use emerging devices. The recognition that leveraging device-level noise as a source of controlled stochasticity represents an exciting prospect of achieving brain-like capabilities in probabilistic neural algorithms, but the reality of integrating stochastic devices with deterministic devices in an already-challenging neuromorphic circuit design process is formidable. Here, we explore how the brain combines different signaling modalities into its neural circuits as well as consider the implications of more tightly integrated stochastic, analog, and digital circuits. Further, by acknowledging that a fully CMOS implementation is the appropriate baseline, we conclude that if mixing modalities is going to be successful for neuromorphic computing, it will be critical that device choices consider strengths and limitations at the overall circuit level.

42 ENGINEERING↗
DOE OSTI2014

Enhanced Confinement Scenarios Without Large Edge Localized Modes in Tokamaks: Control, Performance, and Extrapolability Issues for ITER

Large edge localized modes (ELMs) typically accompany good H-mode confinement in fusion devices, but can present problems for plasma facing components because of high transient heat loads. Here the range of techniques for ELM control deployed in fusion devices is reviewed. The two baseline strategies in the ITER baseline design are emphasized: rapid ELM triggering and peak heat flux control via pellet injection, and the use of magnetic perturbations to suppress or mitigate ELMs. While both of these techniques are moderately well developed, with reasonable physical bases for projecting to ITER, differing observations between multiple devices are also discussed to highlight the needed community R & D. In addition, recent progress in ELM-free regimes, namely Quiescent H-mode, I-mode, and Enhanced Pedestal H-mode is reviewed, and open questions for extrapolability are discussed. Finally progress and outstanding issues in alternate ELM control techniques are reviewed: supersonic molecular beam injection, edge electron cyclotron heating, lower hybrid heating and/or current drive, controlled periodic jogs of the vertical centroid position, ELM pace-making via periodic magnetic perturbations, ELM elimination with lithium wall conditioning, and naturally occurring small ELM regimes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Voltage-controllable generator of pure spin current: A three-terminal model

Three-terminal devices have been frequently proposed to generate the pure spin current. However, the controllability and stability of pure spin current still needs to be improved. In this paper, a three-terminal device, composed of a ferromagnetic metallic lead and two nonmagnetic semiconductor leads coupled with a quantum dot, is employed to study the properties of electron spin transport. The results show that when the external voltage on one of nonmagnetic semiconductor leads is adjusted to a proper range, a pure spin current plateau or a fully spin-polarized current plateau appears in another nonmagnetic semiconductor lead. In a wide range of external voltage, the pure spin current or the spin-polarized current is kept unchanged. Since the change of temperature may considerably influence the spin-polarization of current and is inevitable actually, we studied the corresponding compensation to keep the pure spin current unchanged. Furthermore, the effect of device parameters on the pure spin current is also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

A Reference Governor for Plasma-Shape Control in Tokamaks

Tokamaks are torus-shaped devices where a high-temperature, ionized gas (i.e. a plasma) is confined by means of helical magnetic fields. The ultimate goal of tokamaks is producing net electrical energy by means of nuclear-fusion reactions within the plasma. The shape of the plasma inside the tokamak is closely related with its confinement characteristics and, therefore, with the produced fusion power. In order to achieve and maintain plasma shapes that maximize the fusion yield, feedback controllers have been successfully developed during the years. However, machine-protection and plasma-stability requirements impose hard constraints on the plasma-shape targets that can be safely achieved by a feedback controller. In this work, a reference governor is proposed to provide, in real time, plasma-shape targets that fulfill the aforementioned safety requirements. The reference governor calculates such plasma-shape targets in response to changes in the state of the closed-loop system, as well as disturbances in the plasma energy and current. Here, the reference-governor design is based on a dynamical model of the plasma electromagnetic response. Simulation tests of the reference governor have been carried out for different plasma scenarios in the DIII-D tokamak to emulate realistic cases where safety may be compromised.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Cache-based communication between execution threads of a data processing system

A virtual link buffer provides communication between processing threads or cores. A first cache is accessible by a first processing device and a second cache accessible by a second processing device. An interconnect structure couples between the first and second caches and includes a link controller. A producer cache line in the first cache stores data produced by the first processing device and the link controller transfers data in the producer cache line to a consumer cache line in the second cache. Each new data element is stored at a location in the producer cache line indicated by a store position or tail indicator that is stored at a predetermined location in the same cache line. Transferred data are loaded from a location in the consumer cache line indicated by a load position or head indicator that is stored at a predetermined location in the same consumer cache line.

Beard, Jonathan Curtis↗
DOE OSTI2020

Topological materials by molecular beam epitaxy

Topology appears across condensed matter physics to describe a wide array of phenomena which could alter, augment, or fundamentally change the functionality of many technologies. Linking the basic science of topological materials to applications requires producing high-quality thin films. This will enable combining dissimilar materials while utilizing dimensionality, symmetry, and strain to create or control the electronic phase, as well as platforms to fabricate novel devices. Yet, one of the longstanding challenges in the field remains understanding and controlling the basic material properties of epitaxial thin films. Here, we discuss how understanding the fundamental properties of topological materials grown by molecular beam epitaxy (MBE) is key to deepening the knowledge of the basic physics, while developing a new generation of topological devices. A focus will be on the MBE growth of intrinsic materials, creation, and control of superconducting and magnetic topological phases. Addressing these questions in the coming decade will undoubtedly uncover many surprises as new materials are discovered and their growth as high-quality thin films is refined.

2d quantum materials↗