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The third-order nonlinear intersubband absorption in a semiconductor quantum well is studied theoretically using the density matrix formalism including intrasubband relaxation. It is shown that the peak absorption is reduced by half for an optical intensity 1 MW/sq cm for the well size L = 126.5 A with 3.0 x 10 to the 16th/cu cm electrons.
A monolithically integrated guided-wave modulator has been realized by using molecular-beam epitaxial regrowth and ion-milling techniques. The guiding and modulating regions consist, respectively, of In-doped GaAs and GaAs/In(0.34)Ga(0.66)As strained-layer multiquantum wells. Modulation is achieved by field-enhanced electroabsorption in the multiquantum wells. The insertion loss of the modulator is 0.9 dB, and the transmission loss in the guides is less than or equal to 1 dB/cm. The temporal response of similar GaAs/InGaAs as-grown photodiodes to pulsed laser excitation is characterized by a rise time of 115 psec.
Proposed high-performance spatial light modulator consists of multiple-quantum-well, strain-layer superlattice similar to one described in accompanying article, "Strain-Layer-Superlattice Light Modulator" (NPO-16915). Device differs from other one, operates in transmission rather than in resonant reflection and therefore includes only one stack of GaAs/InAs layers having total thickness less than penetration depth (1 to 2 micrometer) of optical modulating signal. Alternating, semitransparent semiconductor layers contain space-charge barriers forming quantum wells. Modulating light (with photon energy greater than semiconductor band gap) induces photovoltaic action, which affects transmission of modulated light (having photon energy less than band gap).
The first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped In(x)Ga(1-x)As/GaAs multiple quantum well structure is reported. Differential absorption of approximately 10,000/cm is observed in the quantum wells of the test structure at saturation pump powers. Photoluminescence and time-resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.
A novel approach to determining absorption coefficients in thin films using luminescence is described. The technique avoids many of the difficulties typically encountered in measurements of thin samples, Fabry-Perot effects, for example, and can be applied to a variety of materials. The absorption edge for GaAs/AlGaAs multiple quantum well structures, with quantum well widths ranging from 54 to 193 A is examined. Urbach (1953) parameters and excitonic linewidths are tabulated.
A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.
High spatial resolution H I measurements of a high-latitude FIR cirrus cloud (l = 9 deg, b = 51 deg) were obtained with the Arecibo 310 m telescope. The cloud is well isolated spatially and has a velocity well-separated from other H I clouds, providing an ideal laboratory for studying diffuse interstellar clouds. The Iv(100)/N(H) and Iv(60)/Iv(100) ratios are consistent with the Draine and Anderson model which includes a distribution of grain sizes down to 3 A. The small grains undergo transient heating and affect the 60 micron FIR continuum emission. Current models, however, underpredict Iv(12)/Iv(100) and Iv(25)/Iv(100) by more than a factor of 2. The effects small grains have on the thermal equilibrium of diffuse interstellar clouds are discussed.
The intial results of a program aimed at developing low-cost diode laser arrays for use as solid-state laser pumps are reported. MOCVD is used to demonstrate excellent run-to-run reproducibility in emission wavelength, threshold current density, and quantum efficiency. For this first experimental series, J(th) values of approximately 1310 Amps/sq cm were obtained for broad-area unthinned devices from the growth runs. Differential quantum efficiencies of between 41 percent and 47 percent were measured on the non-facet-coated devices from all four runs. Single quantum well, separate confinement heterostructure lasers fabricated from wafers grown in the same MOCVD reactor exhibited near single-mode emission, with J(th) values of approximately 300 Amps/sq cm. Photoluminescence data confirm quantum well widths of 80 A and 150 A for two different MOCVD growth runs.
Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.
Proposed multiple-quantum-well intersubband semiconductor device detects photons over broader range of wavelengths. Device is stack of substacks, each of which contains quantum-well layers sensitive to different narrow band of wavelengths. Bandwidth and detectivity increased.
Radiometric, density of states (material), and thermal considerations are used to obtain the figure of merit of the quantum-well GaAs/GaAlAs infrared detectors described by Smith et. al. The results are compared with HgCdTe, the present industry standard, as well as with recent experiments at other laboratories.
The Kirchhoff approximation for the case of well-developed seas is analyzed. In this peculiar case, the equilibrium range in the wave number spectrum corresponds to a cascade pattern in the surface geometry. Its high wave number cutoff is shown to be a major factor of the radar backscatter. This intrinsic scale is evaluated, and both the geometrical and the physical optics terms are related to major parameters of wind-wave dynamics. The range of validity of the Kirchhoff approximation and the relative importance of the diffraction correction are analyzed. Finally, the radar cross section sigma exp 0 of well-developed seas is compared with that of poorly developed seas. The great qualitative difference shown in the wind speed dependence of sigma exp 0 for these two regimes is pointed out as a source of a considerable error trend recently discovered in satellite altimeter wind measurements.
Strong optically induced absorption modulation has been achieved in a periodically delta-doped InGaAs/GaAs multiple quantum well structure. The use of delta-doping has enabled efficient modulation in short-period structures using a low-power semiconductor laser. With an excitation intensity of 100 mW/sq cm an absolute quantum well absorption change of more than 9000 cm has been measured corresponding to a differential absorption change as high as 58 percent at the excitonic resonance.
The Mariner 9 UV spectrometer scanned from 2100 to 3500 Angstroms in one of its two spectral channels every 3 seconds with a spectral resolution of 15 Angstroms and an effective field-of-view of approximately 300 km(exp 2). The only gaseous absorption in the 2000 to 3000 Angstrom region was assumed to come from the Hartley band system of ozone, and therefore the amount of ozone was inferred by fitting this absorption feature with laboratory data of ozone absorption. Mars O3 as inferred from these spectra shows strong seasonal and latitudinal variation, with column abundances ranging from 0.2 microns at equatorial latitudes to 60 microns over the northern winter polar latitudes. The detectability limit of the spectrometer was approximately 3 microns. I use a radiative transfer model based on the discrete ordinate method to calculate synthetic radiance spectra. When typical amounts of dust and cloud are present, significant underestimation of O3 occurs. A factor of 3 times as much O3 is needed to generate the same spectrum for cloudy, dusty atmospheres as for a clear atmosphere. If the scattering properties of Martian clouds and dust were well known, then their appearance would not be a problem, as a model would be capable of retrieving the O3 abundance. However, these properties are not well known, which raises doubts about the effectiveness of the current UV spectroscopy technique used to measure O3. Spatial and temporal variability in temperature and water vapor have been claimed to account for the scatter of the data points. However, water vapor is a small source of odd hydrogen in the winter polar atmosphere, and may not account for most of the variability. Masking by clouds and dust may also account for some of the observed O3 variability, because the nature and opacity of the clouds and dust in the polar hood change dramatically in latitude and even on a day-to-day basis. As the maximum O3 abundance resides near the surface, spacecraft must be able to observe through the entire cloud and dust abundance in order to actually see the total O3 column abundance. If reflectance spectroscopy is used, as on Mariner 9, then the cloud and the airborne dust must be traversed twice; first by the incoming solar flux down to the surface, and then once again upon reflection from the surface out to the spacecraft.
Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.
A 980-nm-ridge waveguide pseudomorphic InGaAs/GaAs/AlGaAs single-quantum-well laser with a maximum single-ended output power of 240 mW from a facet-coated device is fabricated from a graded-index separate-confinement heterostructure grown by molecular-beam epitaxy. The laser oscillates in the fundamental spatial mode, allowing 22 percent coupling efficiency into a 1.55-micron single-mode optical fiber. Life testing at an output power of 30 mW per facet from uncoated devices reveals a superior reliability to GaAs/AlGaAs quantum-well lasers but also the need for protective facet coatings for long term reliability at power levels required for pumping Er-doped fiber amplifiers.
Absorption data are presented for 2-4-monolayer InAs/GaAs single quantum wells obtained at 77 K using a polarization-based measurement technique. The special contribution of the optical loss features arising from bulk GaAs was minimized using the polarization selectivity of absorption in single quantum wells. The double structure observed in the spectra is attributed to transitions involving confined heavy holes and both confined and unconfined electron states.
The longest-wavelength quantum-well IR photodetector ever achieved, with a cutoff wavelength of 19 microns, is demonstrated. Detailed measurements and an in-depth analysis of the noise, optical gain, detectivity, quantum efficiency, and quantum-well escape probability are also discussed.