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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Collisional space-charge-limited current with monoenergetic velocity: From Child–Langmuir to Mott–Gurney

All theories coupling electron emission theories ultimately approach the space-charge-limited current (SCLC) in vacuum, given by the Child–Langmuir (CL) law, for sufficiently high voltage, or the Mott–Gurney (MG) law for finite electron mobility and high (but not infinite) voltage. These analyses demonstrate the presence of an SCLC regime that cannot be described by either CL or MG. Here, we derive an exact solution for SCLC for general electron mobility and nonzero velocity. We recover the traditional CL with nonzero initial velocity at high voltage. For low mobility (or infinite collision frequency), we derive corrections to the MG law that depend on the ratio of initial velocity to the product of collision frequency and gap distance or initial velocity to drift velocity for low and high voltage, respectively. Increasing collisionality decreases the correction to SCLC for nonzero velocity, indicating that these corrections are less important for low-mobility materials (e.g., solids) than high-mobility materials (e.g., air or vacuum). For a given gap distance (collision frequency), increasing the collision frequency (gap distance) increases the voltage necessary to make the gap appear more like vacuum. These results provide a generalized SCLC for both collisionality and initial velocity when assessing the transitions between electron emission mechanisms.

Physics↗
DOE OSTI2021

High-Current Density Durability of Pt/C and PtCo/C Catalysts at Similar Particle Sizes in PEMFCs

The durability of carbon supported PtCo-alloy based nanoparticle catalysts play a key role in the longevity of proton-exchange membrane fuel cells (PEMFC) in electric vehicle applications. To improve its durability, it is important to understand and mitigate the various factors that cause PtCo-based cathode catalyst layers (CCL) to lose performance over time. These factors include i) electrochemical surface area (ECSA) loss, ii) specific activity loss, iii) H + /O 2 -transport changes and iv) Co 2+ contamination effects. We use a catalyst-specific accelerated stress test (AST) voltage cycling protocol to compare the durability of Pt and PtCo catalysts at similar average nanoparticle size and distribution. Our studies indicate that while Pt and PtCo nanoparticle catalysts suffer from similar magnitudes of electrochemical surface area (ECSA) losses, PtCo catalyst shows a significantly larger cell voltage loss at high current densities upon durability testing. The distinctive factor causing the large cell voltage loss of PtCo catalyst appears to be the secondary effects of the leached Co 2+ cations that contaminate the electrode ionomer. A 1D performance model has been used to quantify the cell voltage losses arising from various factors causing degradation of the membrane electrode assembly (MEA).

08 HYDROGEN↗
DOE OSTI2025

Influence of Control and Limiter Schemes on Sequence-Domain Fault Models of Grid-Forming Inverter-Interfaced Distributed Generators

Unlike synchronous generators, the fault response of grid-forming (GFM) inverter-interfaced distributed generators (IIDGs) is notably governed by the selection of control and current limiting strategies rather than inherent physical traits. While recent research has focused on the sequence domain fault model of GFM IIDGs, a research gap exists in elucidating the influence of control and current limiting schemes on this model's characteristics. This article aims to fill this void by examining how different control and current limiting schemes influence the positive and negative sequence impedances in the phasor-domain fault model of GFM IIDGs. This investigation encompasses droop-based, virtual synchronous machine-based, and virtual oscillator-based reference generation controls alongside rotating and stationary reference-frame-based voltage controls. Furthermore, saturation-based, latching-based, circular and virtual impedance-based current limiting schemes are analyzed. To achieve this goal, a thorough numerical simulation study is conducted. Findings indicate that outer reference generation controls exhibit minimal impact. Conversely, the choice of voltage control and various current limiting schemes emerge as the predominant factors shaping the sequence models of GFM IIDGs. These analyses and results are instrumental in devising reliable protection strategies within inverter-based grids, as a comprehensive understanding of electrical elements in the sequence domain is imperative for effective protective measures.

current limiters↗
DOE OSTI2024

Voltage and temperature effects on low cobalt lithium-ion battery cathode degradation

Degradation of low cobalt lithium-ion cathodes was tested using a full factorial combination of upper cut-off voltage (4.0 V and 4.3 V vs. Li/Li + ) and operating temperature (25 °C and 60 °C). Half-cell batteries were analyzed with electrochemical and microstructural characterization methods. Electrochemical performance was assessed with galvanostatic cycling, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS) supported by distribution of relaxation times (DRT) analysis. Electrode microstructure was characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray absorption near edge structure (XANES) imaging. Higher cut-off voltage cycling shows presence of NiO x formation, a low diffusivity rock-salt phase, in both CV and XRD data. XRD patterns confirmed that the rock-salt phase was beginning to form at the low cut-off voltage at high temperature, but in much lower intensity than at the high cut-off voltage. Higher temperature accelerates degradation processes at both voltages. Degradation factors at high temperature include NiO x formation, cathode material dissolution, and electrolyte decomposition. SEM analysis suggests that supporting phases may isolate and disconnect active material particles reducing capacity retention and battery life cycle. DRT analysis and XANES imaging show that both high temperature samples revealed a NiO x phase based on an increased diffusive impedance and a visible shift in the XANES spectra. The low cut-off voltage, high temperature sample showed a split peak and shift to lower energies indicating early formation of the NiO x phase. The diffusive impedance, which hinders intercalation and deintercalation, is driven by the formation of the NiO x phase. While primarily driven by cut-off voltage, elevated temperature also contributes to this degradation mechanism.

electrochemical impedance spectroscopy↗
DOE OSTI2026

Unveiling the High‐Voltage Reactivity and Gas Evolution With Aluminum‐Based Chloride and Oxychloride Catholytes in Solid‐State Sodium Batteries

All-solid-state sodium batteries (ASSBs) employing halide solid electrolytes (SEs) offer a cost-effective and energy-dense alternative to conventional liquid electrolyte systems. However, their high voltage (>4 V vs. Na/Na + ) performance remains limited by interfacial instability between the cathode active material (CAM) and the SE. We present here the electrochemical and interfacial behaviors of crystalline NaAlCl 4 and amorphous sodium–aluminum–oxychloride (NACO) SEs when combined with NaNi 0.5 Mn 0.5 O 2 cathode. While oxygen incorporation in NACO enhances ionic conductivity by nearly three orders of magnitude relative to NaAlCl 4 , it does not improve high-voltage cycling stability. Cells employing NACO exhibit accelerated capacity fade, increased cell impedance growth, and intrinsic oxygen evolution above 4.5 V vs. Na 3 Sn, as revealed by operando electrochemical mass spectrometry. In contrast, the NaAlCl 4 -based cells show no detectable gas release, underscoring their superior high-voltage stability and safety. Time-of-flight secondary-ion mass spectrometry confirms the formation of Al─O and Ni/Mn─Cl species, respectively, in the SE and CAM, indicating redox-driven anion exchange that contributes to kinetic hindrance of high-voltage phase transitions. The findings establish that while oxygen incorporation enhances ionic transport, it can compromise interfacial stability, suggesting pure chloride SEs may offer a more robust and intrinsically safer pathway for developing high-energy ASSBs.

25 ENERGY STORAGE↗
DOE OSTI2020

Correlated Electrical and Chemical Nanoscale Properties in Potassium-Passivated, Triple-Cation Perovskite Solar Cells

Perovskite semiconductors are an exciting class of materials due to their promising performance outputs in photovoltaic devices. To boost their efficiency further, researchers introduce additives during sample synthesis, such as KI. However, it is not well understood how KI changes the material and, often, leaves precipitants. To fully resolve the role of KI, multiple microscopy techniques are applied and the electrical and chemical behavior of a Reference (untreated) and a KI-treated perovskite are compared. Upon correlation between electrical and chemical nanoimaging techniques, it is discovered that these local properties are linked to the macroscopic voltage enhancement of the KI-treated perovskite. The heterogeneity revealed in both the local electrical and chemical responses indicates that the additive partially migrates to the surface, yet surprisingly does not deteriorate the performance locally, rather, the voltage response homogeneously increases. The research presented within provides a diagnostic methodology, which connects the nanoscale electrical and chemical properties of materials, relevant to other perovskites, including multication and Pb-free alternatives.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evaluation of Optimal Net Load Management in Microgrids Using Hardware-in-the-Loop Simulation

This paper presents the performance evaluation of a net load management (NLM) engine that balances load and generation in an isolated community to power a critical facility after a grid interruption event (e.g., the loss of a large generation unit). This NLM engine is particularly important for microgrid systems because it provides a high-speed, cost-optimal control solution to coordinate grid-forming inverters and to dispatch grid-following inverters and deferrable loads in microgrid systems to enhance grid resilience and reliability. The NLM algorithm cost-optimally dispatches the grid-following inverters and deferrable loads based on the demanded power and load priorities, and the grid-forming inverters use droop control to form system voltages and share active and reactive power. A controller-hardware-in-the-loop platform is developed to evaluate the control performance of the NLM algorithm with two sequential contingency events of lost generation units. The experimental results indicate that the NLM engine can maintain system stability, achieve the targeted system voltage and frequency, and balance load and generation to serve the critical facility with improved system resilience and reliability.

grid-following inverter↗
DOE OSTI2022

Evaluation of Optimal Net Load Management in Microgrids Using Hardware-in-the-Loop Simulation

This presentation discusses the performance evaluation of a net load management (NLM) engine that balances load and generation in an isolated community to power a critical facility after a grid interruption event (e.g., the loss of a large generation unit). This NLM engine is particularly important for microgrid systems because it provides a high-speed, cost-optimal control solution to coordinate grid-forming inverters and to dispatch grid-following inverters and deferrable loads in microgrid systems to enhance grid resilience and reliability. The NLM algorithm cost-optimally dispatches the grid-following inverters and deferrable loads based on the demanded power and load priorities, and the grid-forming inverters use droop control to form system voltages and share active and reactive power. A controller-hardware-in-the-loop platform is developed to evaluate the control performance of the NLM algorithm with two sequential contingency events of lost generation units. The experimental results indicate that the NLM engine can maintain system stability, achieve the targeted system voltage and frequency, and balance load and generation to serve the critical facility with improved system resilience and reliability.

droop control↗
DOE OSTI2024

Performance and Durability of Heavy-Duty Fuel Cell Systems with an Advanced Ordered Intermetallic ORR Alloy Catalyst and Novel Support

Ordered PtCo intermetallic (OIM) catalyst (L1 0 -PtCo/C) is a promising candidate as the oxygen reduction reaction (ORR) catalyst in hybrid fuel cell systems (FCS) for class-8 heavy duty (HD) trucks. Compared to a baseline annealed Pt on high surface area carbon (a-Pt/HSC) catalyst, its mass activity (MA) is 71% higher initially and 144% higher after 90,000 potential cycles in an accelerated stress test (AST). Analysis of the AST data indicates that the ORR kinetic constants do not change with aging and the degradation in the OIM catalyst activity is linearly proportional to the loss in the electrochemically active surface area (ECSA). Several operational strategies are investigated to mitigate catalyst degradation and achieve 25,000-h electrode lifetime and 2.5 kW g −1 Pt utilization on a HD truck duty cycle including load sharing with the hybrid battery, regulating the radiator fan power to maintain the coolant temperature close to 60 °C, clipping the maximum cell voltage below 850 mV, limiting the ECSA loss to 55%, and oversizing the active area of the membrane electrode assemblies by 20%. Drive cycle simulations indicate that the lifetime average voltage degradation rate is about 1.8 μV h −1 and the integrated stack and FCS drive cycle efficiencies decrease by 3.5 to 3.9%.

25 ENERGY STORAGE↗
DOE OSTI2022

A study of electroactive polyvinyl chloride (PVC) gel actuators through the use of the electric modulus formalism and cyclic linear voltage sweeps

The conductivity and dielectric properties are integral to the function of polyvinyl chloride (PVC) gel actuators. The frequency-dependent properties of PVC gel actuators are investigated here in terms of their impedance, permittivity, and for the first time, electric modulus. The data shows that PVC gels’ conductive properties are just as, if not more, important as their dielectric properties in electromechanical transduction applications. The electrode polarization (EP) and its impact on the impedance and dielectric spectra of PVC gels, as well as the developed asymmetric space charge at the anode, are discussed. The electric modulus and tan δ spectra are used for the fitting of Cole-Cole (CC) and Debye relaxation models for gels of varying plasticizer content. The electrostatic adhesive force for PVC gels of varying plasticizer is also measured, indicating large electrostatic adhesion (>2 N cm -2 ). A cyclic linear voltage sweep is used to clarify the dynamics of space charge within the gels. The peak current (associated with space charge development) is seen to be concurrent with the onset of mechanical deformation, showing the asymmetric charge as the origin of electromechanical transduction. Additionally, the maximum charge transferred (as measured by the integration of current over time) before space charge development is found to correlate with the electrostatic adhesive force measured for the gels, pointing to a new method of characterizing PVC gels for actuation.

Instruments & Instrumentation↗
DOE OSTI2024

Fast ion studies in the extended high-performance high β P plasma on EAST

Comprehending and optimizing fast ion behaviors is critical for the enhancement of performance in Experimental Advanced Superconducting Tokamak (EAST). This study explores the potential benefits of several factors that can improve the fast ion confinement. First, experiments show the change in the direction of the NBI2 from counter-I p to co-I p leads to a significant reduction in fast ion losses. TRANSP/NUBEAM simulation and tomography results based on fast-ion D-alpha measurements reveal that after the neutral beam injection (NBI) upgrade, the beam ion prompt loss is reduced by approximately 50%. Second, the upgraded ion cyclotron resonant frequency (ICRF) antenna at the N-port features twice the coupling resistance of the original antennas at EAST. This improved ICRF power coupling has enhanced the synergistic heating effect of NBI + ICRF, where the ICRF wave field accelerates beam ions at the harmonics. Experiments demonstrate that NBI + ICRF synergistic not only enhances plasma neutron yield and β P , but also accelerates beam ions to hundreds of keV. Further, the electron density and the neutral beam voltage have been optimized to reduce the fast ion slowing-down time and beam ion losses. Experimental and simulation results indicate that increasing the electron density reduces beam ion losses and enhances the bootstrap current fraction. While higher beam voltage results in a slight decrease in beam power absorption, it can increase the fraction of bootstrap current. With the understanding of these optimization of fast ion confinement, experiments have demonstrated fully non-inductive operation at high density (n e /n G ∼ 0.67, β P ∼ 3.1, β N ∼ 2.1, H 98,y2 ∼ 1.2) even without the support of co-I p beam NBI2. This investigation presents a potential regime to enhance fast ion confinement and extend performance in the high β P plasma for future experiments.

EAST tokamak↗
DOE OSTI2021

Photogating-driven enhanced responsivity in a few-layered ReSe 2 phototransistor

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (I ph ) at an effective illumination intensity (P eff ). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe 2 ). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, V g = 60 V and P eff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Impact of metal diffusion, lattice distortions, native defects, and ambient on dielectric breakdown in Ni–Ga 2 O 3 Schottky diodes

Ga 2 O 3 unipolar devices are of high interest due to their ~8 MV/cm predicted breakdown fields, which have not yet been achieved due to premature device failure. Pre- and post-failure defect analysis of Ni–Ga 2 O 3 Schottky diodes in ultrahigh vacuum (UHV) and air were performed using depth-resolved cathodoluminescence, high angle annular dark field scanning transmission electron microscopy, and energy dispersive x-ray analysis to understand the physical mechanisms that precede premature breakdown. The breakdown voltage in UHV was dramatically reduced by nearly 40% compared with the breakdown in air. This reduction in the breakdown voltage correlated with post-breakdown differences in Ni distribution, indicating that the coordination and bonding of Ni contribute strongly to electrical behavior in Ni–Ga 2 O 3 Schottky diodes. Breakdown studies in UHV revealed that Ni diffuses away more from the metal–semiconductor interface than with air breakdown, where Ni localizes more near the interface, indicative of the preferential formation of a Ni oxide under O-poor conditions. These measurements also identified the formation of divacancy-interstitial complexes and their characteristic luminescence signature ~150 nm from the interface, the densities of which correlated with breakdown fields. These findings show that electric-field-induced degradation occurs via the rearrangement of native point defects, which act as an additional precursor to device failure. Macroscopically, they show the impact of both vacuum conditions and metal reactivity on Ga 2 O 3 device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Boosting the External Quantum Efficiency of AlGaN-Based Metal–Semiconductor–Metal Ultraviolet Photodiodes by Electrode Geometry Variation

Fast aluminum-gallium-nitride–based metal–semiconductor–metal ultraviolet photodiodes were successfully designed, fabricated, and characterized using conventional photolithography techniques. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the device performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Furthermore, based on the independently measured Hall mobility and electric field, we evaluated the carrier transit time of the devices as 1.31 ps with bias-voltage–independent external quantum efficiency of 1198% in photoconductive mode at 19.5 V and 70% at 60 V for n -doped and intrinsic devices, respectively.

42 ENGINEERING↗
DOE OSTI2021

Maximum Power Reference Tracking Algorithm for Power Curtailment of Photovoltaic Systems

This paper presents an algorithm for power curtailment of photovoltaic (PV) systems under fast solar irradiance intermittency. Based on the Perturb and Observe (P&O) technique, the method contains an adaptive gain that is compensated in real-time to account for moments of lower power availability. In addition, an accumulator is added to the calculation of the step size to reduce the overshoot caused by large irradiance swings. A testbed of a three-phase single-stage, 500 kVA PV system is developed on the OPAL-RT eMEGAsim real-time simulator. Field irradiance data and a regulation signal from PJM (RTO) are used to compare the performance of the proposed method with other techniques found in the literature. Results indicate an operation with smaller overshoot, less dc-link voltage oscillations, and improved power reference tracking capability.

Paduani, Victor↗
DOE OSTI2022

Interdigitated electrode geometry variation and external quantum efficiency of GaN/AlGaN-based metal-semiconductor-metal UV photodetectors

Aluminum gallium-nitride (Al x Ga 1–x N)-based metal–semiconductor–metal (MSM) ultraviolet photodetectors photodetectors (PD’s) have been successfully designed and fabricated using conventional photolithography techniques and tested experimentally to study their spectral sensitivity across different Al content, x, with x varying from 0 to 0.3. (Al)GaN-based UV PD’s have wide and tunable direct band gaps. The ability to easily select the photodetected wavelength by simply varying the aluminum content of GaN thin film (Al x Ga 1–x N) is a significant advantage of these group III–V compounds. Typically, MSM PD’s grown on (Al)GaN thin films result in ultrafast photodetection because of their highly mobile carriers. These devices are limited by the carrier transit time due to the negligible capacitance presented by the interdigitated fingers. Various electrode geometries were fabricated to investigate the influence of metal contact shapes on the devices’ performance indices with emphasis on the response speed and bias-voltage–independent efficiency. Here, coupled with the independently measured Hall mobility and electric field, we computed the carrier transit time of the devices to be as short as 1.31 ps and the bias-voltage–independent external quantum efficiencies were as high as 70% at 60 V for n-doped and intrinsic devices when operated in the reverse bias regime. Here, (Al x )Ga 1–x N photodetectors were designed to explore spectral sensitivity by altering x from 0 to 0.3.

42 ENGINEERING↗
DOE OSTI2021

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with an 3rd party certified efficiency of 23.4 % was fabricated via MOCVD growth on an ex-situ produced Si sub cell. The drastic efficiency improvement over the authors previous peer-reviewed demonstration of such a device architecture is examined. Critical advancements in top cell design to maximize short wavelength response were critical in enabling improved top cell response. An in-depth analysis of this champion tandem cell has identified key loss mechanisms which elucidate the pathway for further efficiency gains. First, voltage dependent collection efficiency in the GaAsP top cell is the primary cause of fill factor losses currently limiting efficiency. Analysis of spectrally resolved I–V measurements and analytical device modeling and indicate poor diffusion length due to elevated dislocation densities as the likely cause for the voltage dependent collection efficiency. Second, modeling for the GaAs 0.75 P 0.25 top cell, using experimental data at multiple dislocation densities, provides quantitative understanding of the current and voltage losses associated with threading dislocations providing a clear efficiency pathway with reduction in dislocation density. Finally, Si subcell modeling identifies the pathway for further Si subcell advances over the present, simplistic design, which has yet to employ the known benefits of rear surface texture or dielectric passivation.

14 SOLAR ENERGY↗
DOE OSTI2024

A method to observe field-region oxide charge and inter-electrode isolation from CV-characteristics of n-on-p devices

Abstract N-on-psilicon sensors will be utilized in the Compact Muon Solenoid (CMS) detector's tracker and High Granularity Calorimeter (HGCAL) in the High Luminosity upgrade of the Large Hadron Collider (HL-LHC). Among their several advantages in terms of radiation hardness over the traditionalp-on-nsensors in the extreme radiation environment of the HL-LHC are electron collection instead of holes and overlapping maxima of weighting and electric fields at the charge-collecting electrodes. The disadvantage of the multi-channel SiO 2 -passivatedn-on-psensors is the generation of an inversion layer under the Si/SiO 2 -interface by a positive interface-oxide-charge (N ox ) that at high densities can compromise the position resolution by creating a conduction channel between the electrodes. This issue is typically addressed by including additional isolnts (p-stp,p-spray) between n + -electrodes. Focusing on the guard-ring regions ofn-on-psensors where no isolation implants are applied between the electrodes, a capacitance-voltage (CV) characterization study of both 6-inch wafer test diodes and 8-inch HGCAL prototype and pre-series sensors showed a distinct threshold voltage (V th,iso ) in theCV-characteristics of a biased n + -electrode when its enclosing guard-ring was left floating. When reproduced by simulations, the measuredV th,iso was found to contain information on the field-regionN ox and indicate the threshold where the two electrodes become electrically isolated by the influence of the reverse bias voltage. Together with previous studies on the inter-electrode isolation of irradiatedn-on-psensors, the results indicate that position sensitiven-on-psensors without isolation implants may be feasible in future HEP experiments.

Instruments & Instrumentation↗