A new thin-film apparatus for depositing induction devices and LC circuits
New apparatus for depositing thin film electrical components and related microcircuitry
SPACECRAFT COMPONENT↗
SEARCH · Engineering Papers
Results for “vacuum electron devices”
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Introduction of Chalcogenide Glasses to Additive Manufacturing: Nanoparticle Ink Formulation, Inkjet Printing, and Phase Change Devices Fabrication
Abstract Chalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
The transition from field emission to collisional space-charge limited current with nonzero initial velocity
Abstract Multiple electron emission mechanisms often contribute in electron devices, motivating theoretical studies characterizing the transitions between them. Previous studies unified thermionic and field emission, defined by the Richardson-Laue-Dushman (RLD) and Fowler–Nordheim (FN) equations, respectively, with the Child-Langmuir (CL) law for vacuum space-charge limited current (SCLC); another study unified FN and CL with the Mott-Gurney (MG) law for collisional SCLC. However, thermionic emission, which introduces a nonzero injection velocity, may also occur in gas, motivating this analysis to unify RLD, FN, CL, and MG. We exactly calculate the current density as a function of applied voltage over a range of injection velocity (i.e., temperature), mobility, and gap distance. This exact solution approaches RLD, FN, and generalized CL (GCL) and MG (GMG) for nonzero injection velocity under appropriate limits. For nonzero initial velocity, GMG approaches zero for sufficiently small applied voltage and mobility, making these gaps always space-charge limited by either GMG at low voltage or GCL at high voltage. The third-order nexus between FN, GMG, and GCL changes negligibly from the zero initial velocity calculation over ten orders of magnitude of applied voltage. These results provide a closed form solution for GMG and guidance on thermionic emission in a collisional gap.
42 ENGINEERING↗
Influence of Copper Composition on Cu 2 BaSn(S,Se) 4 Solution-Deposited Films and Photovoltaic Devices with Over 5% Efficiency
Cu 2 BaSn(S,Se) 4 is currently in the spotlight for prospective environmentally friendly, stable, thin-film solar cell application, with demonstrated device power conversion efficiency (PCE) exceeding 5% for vacuum-deposited absorbers. As suggested by first-principles calculations, experimental studies involving related Cu 2 ZnSn(S,Se) 4 and Cu(In,Ga)(S,Se) 2 absorbers prove that the detailed chemical composition typically plays a sensitive role in altering defects and electronic properties of these complicated compound semiconductors. Herein, the copper composition of Cu 2 BaSn(S,Se) 4 has been systematically modified, employing a solution-based deposition approach, to provide a more complete picture of the phase stability and optoelectronic property sensitivity for this material. X-ray diffraction and scanning electron microscopy show that phase purity is preserved over a film Cu content range of nominally 0.94 ≤ [Cu]/[Ba + Sn] ≤ 1.01. Terahertz spectroscopy and Hall effect measurements reveal that the majority carrier hole density of ~10 13 cm –3 and mobility (~5 cm 2 /V s), as well as the minority carrier lifetime (a bulk lifetime of 180 ps and a surface recombination velocity >106 cm/s), are nominally independent of Cu content. The champion PCEs exceed 4.7% for all copper compositions in the phase-pure region, with a record value of 5.1%, similar to the reported values for record vacuum-deposited devices. Furthermore, these results suggest that Cu 2 BaSn(S,Se) 4 films and solar cells (at the current performance level) may be less sensitive to Cu stoichiometry compared to kesterite materials and therefore may provide a more stable material platform to prepare thin-film solar cells.
(CBTSSe)↗
Vacuum system design, construction, and operation for the Cornell High Energy Synchrotron Source upgrade
During the summer and fall 2018, the Cornell High Energy Synchrotron Source (CHESS), underwent an upgrade that recast the facility as primarily a low emittance X-ray source. The upgrade replaced one sixth of the Cornell Electron Storage Ring (CESR) with six double-bend achromats, featuring four novel CHESS Compact Undulator (CCU) insertion devices, and switched CESR to single particle beam operation. At the time of this writing, the upgraded storage ring has achieved the CHESS-U design goal of operating with 200 mA of positron current at 6.0 GeV beam energy. Additionally, seven out of eleven CHESS-U beamlines are currently in X-ray user operation. The construction and the commissioning of the new section of the CESR accelerator required novel solutions to design, fabrication, and vacuum system operations. Significant design considerations and efforts were made to minimize X-ray ‘dark-time’, returning to operation less than 1 year. This paper describes the important milestones of the process, the solutions implemented, and the present status of CHESS-U.
43 PARTICLE ACCELERATORS↗
Assessment of Blocking Contacts in Suppressing Polarization Effects in CsPbBr 3 Perovskite Detectors
The CsPbBr 3 perovskite has garnered significant attention as a room-temperature semiconductor for hard radiation detection due to straightforward synthesis, scalable crystal growth, low cost, and excellent energy resolution. However, despite these advantages, at ambient temperature, CsPbBr 3 devices may experience performance deterioration and irreversible failure due to “polarization” induced by electromigration of ions to electrical connections on the device. In this study, we tested several contact materials and their optimization deposition techniques to assess the stability of high-performance CsPbBr 3 γ-ray detectors. Metals, with low work functions (Ti, In, Sn, Sb, Pb, Bi, Al, Au, and TiC) and high-work-function (Au or Pt) contacts, were used to form different Schottky junctions using vacuum thermal evaporation, electron-beam evaporation, and sputtering methods. These detectors were tested in intermittent and continuous modes to assess their stability. Among the tested detectors, the Bi/CLB/Pt electrode configuration demonstrated superior stability, operating effectively for 11 months under periodic testing and 16 days under continuous testing. In contrast, other configurations functioned only for a few months under intermittent conditions. Upon incorporating a ~40-nm-thick TiC passivation layer on the anode side (Bi/TiC/CLB/Pt), the CLB device operated continuously for 36 days without degradation. In many cases, the failure mode of the devices was due to the degradation of the anode. Here, the chemical changes in the fresh and deteriorated anodes were characterized using scanning electron microscopy and energydispersive X-ray spectroscopy
CsPbBr3 perovskite↗
The SCEPTRE facility: Improved simulation of the space environment through the application of advanced technology
SCEPTRE (Space Combined Effects Primary Test Research Equipment) is the Air Force Materials Laboratory's primary device for performance testing of spacecraft thermal control materials. It has been undergoing a major upgrade in the last two years aimed at making it capable of simulating the synergistic effects of vacuum, ultraviolet radiation, and electron radiation. In the course of this work, a number of advances have been made in the areas of computer data processing, solar simulation, and the analysis of test results.
Ruley, J. D.↗
Scanning SQUID microscopy in a cryogen-free dilution refrigerator
We report a scanning superconducting quantum interference device (SQUID) microscope in a cryogen-free dilution refrigerator with a base temperature at the sample stage of at least 30 mK. The microscope is rigidly mounted to the mixing chamber plate to optimize thermal anchoring of the sample. The microscope housing fits into the bore of a superconducting vector magnet, and our design accommodates a large number of wires connecting the sample and sensor. Through a combination of vibration isolation in the cryostat and a rigid microscope housing, we achieve relative vibrations between the SQUID and the sample that allow us to image with micrometer resolution over a 150 μm range while the sample stage temperature remains at base temperature. To demonstrate the capabilities of our system, we show images acquired simultaneously of the static magnetic field, magnetic susceptibility, and magnetic fields produced by a current above a superconducting micrometer-scale device.
47 OTHER INSTRUMENTATION↗
Sensor Amplifier for the Venus Ground Ambient
Previous Venus Landers employed high temperature pressure vessels, with thermally protected electronics, to achieve successful missions, with a maximum surface lifetime of 127 minutes. Extending the operating range of electronic systems to the temperatures (480 C) and pressures (90 bar) of the Venus ground ambient would significantly increase the science return of future missions. Toward that end, the current work describes the innovative design of a sensor preamplifier, capable of working in the Venus ground ambient and designed using commercial components (thermionic vacuum tubes, wide band gap transistors, thick film resistors, advanced high temperature capacitors, and monometallic interfaces) To identify commercial components and electronic packaging materials that are capable of operation within the specified environment, a series of active devices, passive components, and packaging materials were screened for operability at 500C, assuming a 10x increase in the mission lifetime. In addition. component degradation as a function of time at 500(deg)C was evaluated. Based on the results of these preliminary evaluations, two amplifiers were developed.
Venus electronics↗
Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices
Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.
Raman↗
Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons
Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.
36 MATERIALS SCIENCE↗
Neutron Detectors for Scattering Applications
The book covers, for the first time, the most common neutron detectors used in neutron scattering facilities and all of those in use at Oak Ridge National Lab. The first two chapters describe the facilities, instruments and the critical detector parameters needed by various instruments. The third chapter focuses on the key components of the 3He-based linear position sensitive detectors as well as on their electronics, which require particular attention to signal-processing and noise reduction. The fourth chapter is dedicated to the 3He alternatives where scintillators play a critical role. Finally, chapter 5 covers emerging neutron detection technologies including semiconductors, vacuum-based devices and their associated readouts, which will be required in the future for high rate and high-resolution neutron detectors.
Diawara, Yacouba↗
Low-Cost Detection of Thin Film Stress during Fabrication
NASA's Marshall Space Flight Center has developed a simple, cost-effective optical method for thin film stress measurements during growth and/or subsequent annealing processes. Stress arising in thin film fabrication presents production challenges for electronic devices, sensors, and optical coatings; it can lead to substrate distortion and deformation, impacting the performance of thin film products. NASA's technique measures in-situ stress using a simple, noncontact fiber optic probe in the thin film vacuum deposition chamber. This enables real-time monitoring of stress during the fabrication process and allows for efficient control of deposition process parameters. By modifying process parameters in real time during fabrication, thin film stress can be optimized or controlled, improving thin film product performance.
Nabors, Sammy A.↗
Bessel Tube to Capture Lunar Volatiles
Current arts to create linear motion or acceleration of fine particles and molecules into devices such as mass spectrometers and vacuum pumps rely on the pressure difference created by a pinhole or mechanical processes. However, in an environment of vacuum, these approaches do not create such a pressure differential to drive and move fine particles and molecules. In some cases, electrostatic or magnetic processes may work to create the desired motion. A cylindrical harmonic of electric field, which is widely used in electron accelerators, offers a unique capability to capture and induce a linear motion of molecules and particles when electrically charged. Generally, lunar volatiles are electrostatically charged. The idea to capture and collect the lunar volatiles by creating a drift axis of motion using a cylindrical harmonic field has led to the development of a device concept, called a Bessel Tube. The Bessel Tube concept ingests fine particles, gaseous atoms, and gaseous molecules and guides them along an extraction tube for collection, separation, and analysis. The Bessel Tube concept for lunar volatile collection is discussed.
Bessel Tube↗
Molecular Beam Epitaxy of Monocrystalline GaAs on Water-Soluble NaCl Thin Films
The goal of this project was to demonstrate the feasibility of employing an epitaxial NaCl thin film as a water-soluble release layer for III-V photovoltaic devices and GaAs substrate reuse. Over the course of this project efforts were focused on: 1) achieving crystalline NaCl thin films on GaAs (100) substrate, 2) exploring the growth parameters for subsequent GaAs on NaCl thin films in effort to improve crystallinity of the semiconductor layer, 3) deposition and removal of single crystalline solar cell devices from the parent substrate, and 4) improving morphology and reducing large scale defects in the removed layers to fabricate a working a solar cell device. There was no previous work on direct integration of GaAs/NaCl/GaAs heterostructures at the time of this study. We used molecular beam epitaxy (MBE) to deposit both the alkali halide salt and subsequent III-V material in the same chamber, with no vacuum break. Single crystalline GaAs films were achieved on NaCl layers through careful tuning of the growth parameters and exposure to the reflection high energy electron diffraction (RHEED) beam. Dissolution of the NaCl layer in water provided rapid release of the semiconductor layer from the substrate. Monocrystalline solar cells were grown on the III-V templates using MBE and dynamic hydride vapor phase epitaxy (HVPE). However, the extended time at elevated temperatures required for the cell growth resulted in large area defects from fusion of the semiconductor overlayer to the substrate, causing shorts in fabricated devices. By changing the way that the template layer was grown, the density of these defects could be reduced. Unfortunately, the defects were not reduced to a level allowing for fabrication of a working device.
14 SOLAR ENERGY↗
A look into the crystal ball: The next 25 years
The PTTI Planning Meeting was born at about the same time as the atomic definition of the unit of time, the second. This use of the cesium resonance was made possible by advances in quantum electronics during the preceding decade which resulted in commercial availability of cesium, rubidium, and hydrogen clocks and frequency standards. Twenty-five years later these types of clocks still are the backbone of time and frequency applications; together with a variety of crystal oscillators, transmitters, and receivers, as well as signal distribution, conditioning and switching systems, atomic clocks are an essential part of the infrastructure of modern navigation and communication technology. The next 25 years undoubtedly will see a pervasive expansion of PTTI into the infrastructure that supports and leverages industrial, social, environmental, defense, and even individual human activities. Speculation as to what capabilities, services, and personal conveniences may become available will be limited by two factors: the degree to which existing device concepts can be made more affordable and reliable, and the ability to miniaturize for purposes of compatibility with electronic integration. With regard to the latter, history teaches us that the required technological breakthrough is unlikely to originate in existing technology; thus, we may expect a paradigm shift in PTTI device concepts not unlike the shift in the 1960s from vacuum tubes to semiconductors.
Hellwig, Helmut↗
AlGaN/GaN Core-Shell Nanofin Diodes on Si Substrates for Vertical GaN Electronics
We demonstrate plasma-assisted MBE selective-area growth of GaN/AlGaN core-shell structures on Si(111) as a path to vertical GaN devices. The selective-area growth enables the full vertical and uniform core-shell fin structures to be realized in a continuous growth without breaking vacuum. TEM images and EDS mapping of the core-shell structures show well-aligned crystal structure and sharp heterointerfaces. Dislocation filtering was observed in STEM imaging of the fin structure. P-N junction diodes fabricated with GaN/AlGaN core-shell structures reveal ideality factors as low as 1.5, and the reverse-bias leakage is consistent with trap-assisted space-charge-limited conduction. While practical challenges exist, including material-related leakage, growth-related challenges and optimization, this demonstration of p-n junction by this method may provide a path to vertical Superjunction device concepts in GaN and related materials.
Xiong, Juncheng [University of Notre Dame, IN (Uni↗
Photon Frequency Conversion in High-Q Superconducting Resonators: Axion Electrodynamics, QED, and Nonlinear Meissner Radiation
High-Q superconducting resonators have been proposed and developed as detectors of light-by-light scattering mediated by the hypothesized axion or virtual electron–positron pairs in quantum electrodynamics: the Euler–Heisenberg (EH) interaction. Photon frequency and mode conversion is central to the scheme for detecting such rare events. Superconducting resonators are nonlinear devices. The Meissner screening currents that confine the electromagnetic fields to the vacuum region of a superconducting RF cavity are nonlinear functions of the EM field at the vacuum–superconducting interface, and as a result can generate source currents and frequency conversion of microwave photons in the cavity. In this report we consider photon frequency and mode conversion in superconducting resonators with high quality factors from Meissner currents in single- and dual-cavity setups proposed for axion and QED searches based on light-by-light scattering. In a single cavity with two pump modes, photon frequency conversion by the Meissner screening current dominates photon generation by the EH interaction for cavities with Q≲1012. The Meissner currents also generate background photons that limit the operation of the resonator for axion detection in three-mode, single-cavity setups. We also consider the leakage of photons from pump modes into the signal mode for both axion- and EH-mediated light-by-light scattering. Photon frequency conversion by the EH interaction can compete with Meissner and leakage radiation in ultra-high-Q cavities that are beyond the current state of the art. Meissner radiation and leakage backgrounds can be suppressed in dual-cavity setups with appropriate choices for pump and spectator modes, as well as the single-cavity setup proposed for heterodyne detection of galactic axion dark matter.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗