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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

GoldSim E-Area Low-Level Waste Lacility Vadose Zone Model Benchmarking

This report documents the development and benchmarking of the E-Area Low-Level Waste Facility (ELLWF) GoldSim Engineered and Slit Trench (ET and ST) vadose zone models. Subsequent activities (beyond the scope of this effort) will couple the GoldSim-based vadose zone models to the GoldSim aquifer model, with the intent of performing stochastic analyses that couple all pertinent fate and transport processes from the ground surface up to the 100-m Point of Assessment (POA). The benchmarking presented within this report focuses on the Slit Trench 06 (ST06) bydrostratigraphic location that resides within the center set of slit trenches. These GoldSim-based vadose zone models are generic models capable of being benchmarked to any of the other trench locations within E-Area.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2024

Performance Assessment for the Disposal of Low-Level Waste in the 200 West Area Burial Grounds (Annual Summary Report - FY 23)

This annual review provides the projected dose estimates of radionuclide inventories disposed in the 200 West Area Low-Level Waste Burial Grounds (LLBGs) since September 26, 1988. All the trenches in these burial grounds except two have remained inactive since 2005. The only active trenches that continue to receive low-level and mixed low-level waste are Trenches 31 and 34 that are located in the southern portion of the 218-W-5 Burial Ground. During this reporting period (fiscal year 2023, from October 1, 2022, through September 30, 2023), waste was disposed in these two trenches.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2024

Performance Assessment for the Disposal of Low-Level Waste in the 200 East Area Burial Grounds (Annual Summary Report - FY 23)

This annual review provides the projected dose estimates of radionuclide inventories disposed in the 200 East Area Low-Level Waste Burial Grounds (LLBGs) since September 26, 1988. All trenches in these burial grounds except one have remained inactive since 2005. Trench 94 located in 218-E-12B Burial Ground is the only active trench that is dedicated for disposal of U.S. Navy reactor compartments. During this reporting period (fiscal year 2023, from October 1, 2022, through September 30, 2023), no reactor compartments were disposed in Trench 94.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2026

Annual Summary Report (FY 2025) Performance Assessment for the Disposal of Low-Level Waste in the 200 West Area Burial Grounds

This annual review provides the projected dose estimates of radionuclide inventories disposed in the 200 West Area Low-Level Waste Burial Grounds (LLBGs) since September 26, 1988. All the trenches in these burial grounds except two have remained inactive since July 2004. The only active trenches that continue to receive low-level and mixed low-level waste are Trenches 31 and 34 that are located in the southern portion of the 218-W-5 Burial Ground. During this reporting period (fiscal year 2025, from October 1, 2024, through September 30, 2025), waste was disposed in Trench 31 only.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2026

Annual Summary Report (FY 2025) Performance Assessment for the Disposal of Low-Level Waste in the 200 East Area Burial Grounds

This annual review provides the projected dose estimates of radionuclide inventories disposed in the 200 East Area Low Level Burial Grounds (LLBGs) since September 26, 1988. All trenches in these burial grounds except one have remained inactive since July 2004. Trench 94 located in 218-E-12B Burial Ground is the only active trench, which is dedicated for disposal of U.S. Navy reactor compartments. During this reporting period (fiscal year 2025, from October 1, 2024, through September 30, 2025), two reactor compartments were disposed in Trench 94.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
NASA NTRS1985

True polar wander and plate-driving forces

The nature of net torques applied to the lithosphere by ridge and trench forces as implied by the absence of recent true polar wander is explored. The 'ridge push' and 'trench pull' forces and the potential net torques on the global lithosphere contributed by each of these forces are discussed. It is shown that the relative magnitudes of the net torques contributed by ridge and trench forces are constrained by the absence of true polar wander during the Cenozoic and by the magnitudes of basal shear stresses on the faster moving plates. It is suggested that the lack of recent true polar wander may be due at least in part to the coincidence of a near cancellation of net torques contributed by ridge and trench forces.

Davis, D. M.↗
NASA NTRS1986

A simple tectonic model for crustal accretion in the Slave Province: A 2.7-2.5 Ga granite greenstone terrane

A prograding (direction unspecified) trench-arc system is favored as a simple yet comprehensive model for crustal generation in a 250,000 sq km granite-greenstone terrain. The model accounts for the evolutionary sequence of volcanism, sedimentation, deformation, metamorphism and plutonism, observed througout the Slave province. Both unconformable (trench inner slope) and subconformable (trench outer slope) relations between the volcanics and overlying turbidities; and the existence of relatively minor amounts of pre-greenstone basement (microcontinents) and syn-greenstone plutons (accreted arc roots) are explained. Predictions include: a varaiable gap between greenstone volcanism and trench turbidite sedimentation (accompanied by minor volcanism) and systematic regional variations in age span of volcanism and plutonism. Implications of the model will be illustrated with reference to a 1:1 million scale geological map of the Slave Province (and its bounding 1.0 Ga orogens).

Hoffman, P. F.↗
NASA NTRS1992

Evidence for retrograde lithospheric subduction on Venus

Annular moats and outer rises around large Venus coronas such as Artemis, Latona, and Eithinoha are similar in arcuate planform and topography to the trenches and outer rises of terrestrial subduction zones. On earth, trenches and outer rises are modeled as the flexural response of a thin elastic lithosphere to the bending moment of the subducted slab; this lithospheric flexure model also accounts for the trenches and outer rises outboard of the major coronas on Venus. Accordingly, it is proposed that retrograde lithospheric subduction may be occurring on the margins of the large Venus coronas while compensating back-arc extension is occurring in the expanding coronas interiors. Similar processes may be taking place at other deep arcuate trenches or chasmata on Venus such as those in the Dali-Diana chasmata area of aestern Aphrodite Terra.

Sandwell, David T.↗
NASA NTRS1996

Impingement-Current-Erosion Characteristics of Accelerator Grids on Two-Grid Ion Thrusters

Accelerator grid sputter erosion resulting from charge-exchange-ion impingement is considered to be a primary cause of failure for electrostatic ion thrusters. An experimental method was developed and implemented to measure erosion characteristics of ion-thruster accel-grids for two-grid systems as a function of beam current, accel-grid potential, and facility background pressure. Intricate accelerator grid erosion patterns, that are typically produced in a short time (a few hours), are shown. Accelerator grid volumetric and depth-erosion rates are calculated from these erosion patterns and reported for each of the parameters investigated. A simple theoretical volumetric erosion model yields results that are compared to experimental findings. Results from the model and experiments agree to within 10%, thereby verifying the testing technique. In general, the local distribution of erosion is concentrated in pits between three adjacent holes and trenches that join pits. The shapes of the pits and trenches are shown to be dependent upon operating conditions. Increases in beam current and the accel-grid voltage magnitude lead to deeper pits and trenches. Competing effects cause complex changes in depth-erosion rates as background pressure is increased. Shape factors that describe pits and trenches (i.e. ratio of the average erosion width to the maximum possible width) are also affected in relatively complex ways by changes in beam current, ac tel-grid voltage magnitude, and background pressure. In all cases, however, gross volumetric erosion rates agree with theoretical predictions.

Barker, Timothy↗
NASA NTRS1995

Alaska Crustal Deformation: Finite Element Modeling Constrained by Geologic and Very Long Baseline Interferometry Data

We compute crustal motions in Alaska by calculating the finite element solution for an elastic spherical shell problem. The method we use allows the finite element mesh to include faults and very long baseline interferometry (VLBI) baseline rates of change. Boundary conditions include Pacific-North American (PA-NA) plate motions. The solution is constrained by the oblique orientation of the Fairweather-Queen Charlotte strike-slip faults relative to the PA-NA relative motion direction and the oblique orientation from normal convergence of the eastern Aleutian trench fault systems, as well as strike-shp motion along the Denali and Totschunda fault systems. We explore the effects that a range of fault slip constraints and weighting of VLBI rates of change has on the solution. This allows us to test the motion on faults, such as the Denali fault, where there are conflicting reports on its present-day slip rate. We find a pattern of displacements which produce fault motions generally consistent with geologic observations. The motion of the continuum has the general pattern of radial movement of crust to the NE away from the Fairweather-Queen Charlotte fault systems in SE Alaska and Canada. This pattern of crustal motion is absorbed across the Mackenzie Mountains in NW Canada, with strike-slip motion constrained along the Denali and Tintina fault systems. In south central Alaska and the Alaska forearc oblique convergence at the eastern Aleutian trench and the strike-shp motion of the Denali fault system produce a counterclockwise pattern of motion which is partially absorbed along the Contact and related fault systems in southern Alaska and is partially extruded into the Bering Sea and into the forearc parallel the Aleutian trench from the Alaska Peninsula westward. Rates of motion and fault slip are small in western and northern Alaska, but the motions we compute are consistent with the senses of strike-slip motion inferred geologically along the Kaltag, Kobuk Trench, and Thompson Creek faults and with the normal faulting observed in NW Alaska near Nome. The nonrigid behavior of our finite element solution produces patterns of motion that would not have been expected from rigid block models: strike-slip faults can exist in a continuum that has motion mostly perpendicular to their strikes, and faults can exhibit along-strike differences in magnitudes and directions.

Lundgren, Paul↗
NASA NTRS2002

Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

Hwang, Helen H.↗
NASA NTRS2004

Web Growth Used to Confine Screw Dislocations to Predetermined Lateral Positions in 4H-SiC Epilayers

Silicon-carbide- (SiC-) based power devices could enable substantial aerospace electronics benefits over today's silicon-based electronics. However, present-day SiC wafers contain electrically harmful dislocations (including micropipes) that are unpredictably distributed in high densities across all commercial 4H- and 6H-SiC wafers. The NASA Glenn Research Center recently demonstrated a crystal growth process that moves SiC wafer dislocations to predetermined lateral positions in epitaxial layers so that they can be reproducibly avoided during subsequent SiC electronic device fabrication. The process starts by reactive ion etching mesa patterns with enclosed trench regions into commercial on-axis (0001) 4H- or 6H-SiC substrates. An example of a pregrowth mesa geometry with six enclosed triangular-shaped trench regions is shown. After the etch mask is stripped, homoepitaxial growth is carried out in pure stepflow conditions that enable thin cantilevers to grow laterally from the tops of mesas whose pregrowth top surfaces are not threaded by substrate screw dislocations. The image in the bottom figure shows the postgrowth structure that forms after the lateral cantilevers expand to coalesce and completely roof over each of the six triangular trench regions. Atomic force microscope (AFM) measurements of the roof revealed that three elementary screw dislocation growth spirals, each shown in the AFM insets of the bottom image on the previous page, formed in the film roof at three respective points of cantilever film coalescence. The image above shows the structure following an etch in molten potassium hydroxide (KOH) that produced surface etch pits at the dislocation defects. The larger KOH etch pits--S1, S2, and S3--shown in this image correspond to screw dislocations relocated to the final points of cantilever coalescence. The smaller KOH etch pits are consistent with epilayer threading edge dislocations from the pregrowth substrate mesa (P1, P3, and P4) and a final cantilever coalescence point (P2). No defects (i.e., no etch pits) are observed in other cantilevered portions of the film surface. On the basis of the principle of dislocation Burgers vector conservation, we hypothesize that all vertically propagating substrate dislocations in an enclosed trench region become combined into a single dislocation in the webbed film roof at the point of final roof coalescence. The point of final roof coalescence, and therefore the lateral location of a webbed roof dislocation, can be designed into the pregrowth mesa pattern. Screw dislocations with predetermined lateral positions can then be used to provide the new growth steps necessary for growing a 4H/6H-SiC epilayer with a lower dislocation density than the substrate. Devices fabricated on top of such films can be positioned to avoid the preplaced dislocations.

Powell, J. Anthony↗
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
NASA NTRS2009

The Phoenix Mars Lander Robotic Arm

The Phoenix Mars Lander Robotic Arm (RA) has operated for over 150 sols since the Lander touched down on the north polar region of Mars on May 25, 2008. During its mission it has dug numerous trenches in the Martian regolith, acquired samples of Martian dry and icy soil, and delivered them to the Thermal Evolved Gas Analyzer (TEGA) and the Microscopy, Electrochemistry, and Conductivity Analyzer (MECA). The RA inserted the Thermal and Electrical Conductivity Probe (TECP) into the Martian regolith and positioned it at various heights above the surface for relative humidity measurements. The RA was used to point the Robotic Arm Camera to take images of the surface, trenches, samples within the scoop, and other objects of scientific interest within its workspace. Data from the RA sensors during trenching, scraping, and trench cave-in experiments have been used to infer mechanical properties of the Martian soil. This paper describes the design and operations of the RA as a critical component of the Phoenix Mars Lander necessary to achieve the scientific goals of the mission.

Bonitz, Robert↗
DOE OSTI2025

V‐Groove Si Nanopatterning for the Direct Epitaxy of Orientation‐Patterned III–V Nonlinear Optical Crystals

Orientation‐patterned (OP) III–V semiconductors—used as quasi‐phase‐matched crystals for nonlinear optics applications—are typically epitaxially grown on expensive III–V substrates using a complex process requiring three separate epitaxy steps. In this work, a method is demonstrated for growing orientation‐patterned III–V crystals on Si substrates through V‐groove nanopatterning and a single epitaxial growth. V‐groove Si allows for suppression of random antiphase domain formation that is typical of III–V growth on (001)‐oriented Si through the use of (111)‐faceted trenches patterned on (001)‐oriented Si substrates. By alternating the directions of the V‐groove trenches between [110] and [10], antiphase boundaries can be selectively induced at the boundaries between the two directions of trenches due to the difference in symmetry between the III–V material and Si. This approach allows for a greatly simplified process for growing OP‐III‐Vs and more broadly is a new, robust approach for precisely patterning antiphase boundaries of arbitrary shape and length scales down to 50 nm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

2-D moving mesh modeling of lithium dryout in open surface liquid metal flow applications

Liquid lithium displays increasing promise as a replacement for solid plasma facing components (PFCs) in fusion device applications. The Liquid Metal Infused Trench (LiMIT) system, developed at the University of Illinois (UIUC), has demonstrated how thermoelectric magnetohydrodynamics (TEMHD) can be harnessed to drive liquid lithium flow in an open surface PFC. However, in the highest heat flux applications, large local acceleration is created via TEMHD, and the sudden increase in velocity can cause the liquid level to expose the underlying solid, eliminating the protective benefits of the lithium. In order to study potential mitigation strategies, a 2-D COMSOL Multiphysics model was developed using the moving mesh module to capture free surface flow. The model depicts the development of the dryout phenomenon for 2 test cases – slow (1 cm/s) and medium (10 cm/s) flow in 5 mm deep trenches – including the liquid level reduction under the high heat flux and the pileup of slower flow both upstream and downstream of the heat stripe. The effectiveness of trench shaping dryout mitigation strategies is examined. For the slow flow case, it is shown that a 1.8 mm ledge placed under the heat stripe will stop dryout, and for the medium flow case, a 2.7 mm ledge is required to mitigate the effect. This model can be used to identify strategies for increasing the viable heat load for open surface liquid lithium PFCs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Net lithium deposition and dominant self-sputtering in lithium tokamak experiment-β with a liquid lithium wall

We observed enhanced net lithium deposition and lithium erosion, possibly dominated by physical sputtering of lithium by lithium-ion bombardment, on the outer plasma-facing surface in the Lithium Tokamak eXperiment-β (LTX-β) during liquid lithium wall operations. Silicon crystal samples with micro-trenches (30 μm × 30 μm × 2–7 μm deep) were exposed to hydrogen plasmas in LTX-β for solid and liquid lithium wall operations. Post-mortem analysis using X-ray photoelectron spectroscopy combined with argon ion sputtering measured net lithium deposition of 8.2 or 21 nm on the silicon crystal surface exposed for ~ 50 repeated shots of ~ 50-ms hydrogen plasma discharges during the liquid lithium wall operations at a vessel temperature of 475 K. Energy dispersive X-ray spectroscopy measured oxygen concentration patterns on the micro-trench floors, which were due to oxidized lithium deposition. Using the inhomogeneous oxygen concentration pattern caused by an ion-shadowing effect associated with the micro-trench’s geometric structure, we determined a polar incident ion direction of 68.4 ± 1.6° referenced to the surface normal direction. This observation was well-explained by the hypothesis that self-sputtering of Li was a dominant lithium erosion source in addition to lithium sputtering by hydrogen bombardment.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Confined Growth of DNA-Assembled Superlattice Films

Here, we study the assembly of DNA-functionalized nanocubes under lateral confinement in microscale square trenches on a DNA-functionalized substrate. Microfocus small-angle X-ray scattering (SAXS) and scanning electron microscopy (SEM) are used to characterize the superlattices (SLs). The results indicate that nanocubes form simple-cubic SLs with square-prism morphology and a (100) out-of-plane orientation to maximize DNA bonding. In-plane, SLs align with the template, exposing their {100} side facets, and the degree of alignment depends on trench size. Interestingly, the distribution of in-plane orientations determined from SAXS and SEM do not agree, indicating that the internal and external structures of the SLs differ. To understand this discrepancy, X-ray ptychography is employed to image the internal structures of the SLs, revealing that SLs which appear to be single-crystalline in SEM may have subsurface grain boundaries, depending on trench size. SEM reveals that the SLs grow via nucleation and growth of randomly oriented domains, which then coalesce; this mechanism explains the observed dependence of alignment and defect structure on size. Interestingly, crystallization occurs via an unusual growth mode, whereby continuous SL layers grow on top of several misoriented islands. Overall, this work elucidates the effect of lateral confinement on the crystallization of DNA-functionalized nanoparticles and shows how X-ray ptychography can be used to gain insight into nanoparticle crystallization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗