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At least 127 records · Page 7

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DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Resonance Suppression based on Predictive Control of Grid-following Inverters with LCL Filter in Weak Grid Condition

This paper presents an effective resonance suppression control when grid interactive inverter with LCL filter experience weak grid conditions. The resonance suppression mechanism is based on finite-set model predictive control (FSMPC) with adaptive cost function to alter the controller objectives seamlessly. The large parasitic impedance and low short circuit ratio (SCR) of weak grid challenges the operation of gridconnected inverters. Specifically, the LCL filter resonance may get excited, resulting in collapse of the inverter operation. To address this issue, an effective active damping approach is implemented in the proposed control. In the proposed active damping scheme for resonance suppression, the feedback currents are switched based on the operating conditions of inverter. During the stiff grid conditions, grid current serves as feedback to the controller. While in the weak grid conditions, the inverter current is selected as feedback signal. The toggling action between these two feedback currents is determined by comparing moving RMS of grid current with threshold current as constraint in the cost function of the proposed MPC scheme. The threshold current for toggling action is based on the reference active and reactive power setpoints plus an acceptable band of variation. The theoretical analysis is verified by several case studies.

Umar, Muhammad Farooq↗

DOE OSTI2020

Identifying Photoinduced Dipolar Polarization and Orbit–Orbit Interaction between Excitons in Organic–Inorganic Hybrid Perovskites

Abstract Photoinduced polarization and orbit–orbit interaction are important issues in hybrid perovskites toward developing optoelectronic functionalities. This paper identifies that photoinduced polarization occurs in hybrid perovskites with mixed‐cation methylammonium (MA)/formamidinium (FA) (MA x FA (1− x ) PbI 3 ) by measuring bulk polarization at 1 MHz in a magnetic field. Interestingly, when the internal dipole moment is increased upon increasing the MA:FA ratio, the photoinduced dipolar polarization can be substantially enhanced, clarifying the controversial issue of whether photoexcitation can induce a dielectric polarization within dipolar polarization regime in hybrid perovskites. Furthermore, upon increasing photoinduced dipolar polarization, it is found that the intrinsic orbit–orbit interaction between excitons can be increased, revealed by monitoring photocurrent change (Δ J sc ) upon switching the photoexcitation between linear and circular polarizations. This presents that organic cations are directly involved in the orbit–orbit interaction within band structures. Clearly, the studies provide an insightful understanding of the dipole moment effects on photoinduced dipolar polarization and orbit–orbit interaction between excitons in hybrid perovskites toward controlling the optoelectronic properties.

Dou, Yixuan↗

DOE OSTI2020

Organometallic Synthesis of Bimetallic Cobalt‐Rhodium Nanoparticles in Supported Ionic Liquid Phases (Co x Rh 100− x @SILP) as Catalysts for the Selective Hydrogenation of Multifunctional Aromatic Substrates

Abstract The synthesis, characterization, and catalytic properties of bimetallic cobalt‐rhodium nanoparticles of defined Co:Rh ratios immobilized in an imidazolium‐based supported ionic liquid phase (Co x Rh 100− x @SILP) are described. Following an organometallic approach, precise control of the Co:Rh ratios is accomplished. Electron microscopy and X‐ray absorption spectroscopy confirm the formation of small, well‐dispersed, and homogeneously alloyed zero‐valent bimetallic nanoparticles in all investigated materials. Benzylideneacetone and various bicyclic heteroaromatics are used as chemical probes to investigate the hydrogenation performances of the Co x Rh 100− x @SILP materials. The Co:Rh ratio of the nanoparticles is found to have a critical influence on observed activity and selectivity, with clear synergistic effects arising from the combination of the noble metal and its 3d congener. In particular, the ability of Co x Rh 100− x @SILP catalysts to hydrogenate 6‐membered aromatic rings is found to experience a remarkable sharp switch in a narrow composition range between Co 25 Rh 75 (full ring hydrogenation) and Co 30 Rh 70 (no ring hydrogenation).

Rengshausen, Simon↗

DOE OSTI2020

Dispersion of cryogenic hydrogen through high-aspect ratio nozzles

Liquid hydrogen is increasingly being used as a delivery and storage medium for stations that provide compressed gaseous hydrogen for fuel cell electric vehicles. In efforts to provide scientific justification for separation distances for liquid hydrogen infrastructure in fire codes, the dispersion characteristics of cryogenic hydrogen jets (50–64 K) from high aspect ratio nozzles have been measured at 3 and 5 bar abs stagnation pressures. These nozzles are more characteristic of unintended leaks, which would be expected to be cracks, rather than conventional round nozzles. Spontaneous Raman scattering was used to measure the concentration and temperature field along the major and minor axes. Within the field of interrogation, the axis-switching phenomena was not observed, but rather a self-similar Gaussian-profile flow regime similar to room temperature or cryogenic hydrogen releases through round nozzles. The concentration decay rate and half-widths for the planar cryogenic jets were found to be nominally equivalent to that of round nozzle cryogenic hydrogen jets indicating a similar flammable envelope. The results from these experiments will be used to validate models for cryogenic hydrogen dispersion that will be used for simulations of alternative scenarios and quantitative risk assessment.

08 HYDROGEN↗

DOE OSTI2020

Design Optimization for Weighted Conduction Loss Minimization in a Dual-Active-Bridge-Based PV Microinverter

This manuscript presents a harmonic-superposition based frequency-domain approach for analysis and optimal design of a single-stage DAB-based DC-AC converter used in low-voltage DC to high voltage AC applications, such as PV microinverter. Specifically, two topological variations and correspondingly different modulation strategies involving up to four control variables (three phase shifts and switching frequency) are analyzed. Optimal trajectories of control variables are determined that result in minimized transformer RMS current at a given average power, while enforcing near-uniform ZVS. To make the design process holistic, an outer optimization loop is used to determine optimal values for the power transfer inductance (integrated as the transformer’s leakage inductance) and turns ratio, which minimize the weighted-average conduction loss contribution to the microinverter’s CEC efficiency. Based on the optimization analyses, a 400 W microinverter prototype is built and experimental results at one operating point are presented, achieving a measured efficiency of 92.8%.

14 SOLAR ENERGY↗

DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗

DOE OSTI2023

Amorphous Metal Ribbon (AMR) and Metal Amorphous Nanocomposite (MANC) Materials Enabled High Power Density Vehicle Motor Applications (Final Technical Report)

A collaborative team from Carnegie Mellon Univ. (CMU), North Carolina State Univ. (NCSU) and Metglas, South Carolina have studied new high speed motors (HSMs) with high-power density for traction motor applications. These are enabled by hybrid designs, including Flux Switching with Permanent Magnets (FSWPM) motors, exploiting permanent magnets without heavy rare earths (RE-lean) and high induction/high resistivity soft magnetic materials that allow for high switching frequencies needed to increase power densities. Team members include Michael E. McHenry, Prof. Materials Science & Eng., CMU, with > 30 years experience in magnetic materials development; Subashish Bhattacharya, Prof. Electrical Eng. and Freedom Center Director at NCSU with > 30 years experience in development of power electronic components and systems and Eric Theisen, Director of Research at Metglas, the only US located supplier of AMR and MANC materials. The team offers novel axial motor architectures exploiting soft magnetic materials (SMMs) that switch with low loss at high frequencies and heavy rare earth free permanent magnets that address materials criticality issues, supply chain risks, and high costs for traction motors. Axial-flux permanent magnet motors (APFM), offer efficiency improvements reducing rotor losses and also significantly higher power density. Axial-flux construction requires less core material, high torque-to-weight ratio. Since AFPM machines have thin magnets, they are smaller than radial flux motors making them attractive in space-limited applications. Noise and vibration are less and planar air gaps are easily adjusted. Flexibility in air-gap direction allows many topologies.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Effect of modeled time horizon on quantifying the need for long-duration storage

Long-Duration Energy Storage (LDES) has gained interest due to its key role in attaining a decarbonized, low-cost, and stable grid driven by variable renewable electricity (VRE). Currently, there is a wide range of LDES technologies being developed to provide electricity with 8+ hours of consecutive discharge. However, current capacity expansion models used in long-term planning processes rarely consider low cost LDES as a candidate technology. If they do, the storage balancing horizon (SBH) of the model usually only considers non-consecutive 1-day periods that do not capture the potential of LDES to shift energy across multiple days or even seasons. Addressing these limitations in existing models, this work explores the ways in which the optimal energy storage changes when increasing the number of consecutive days in the SBH and how these changes will impact planners who are determining the future roles of energy storage. Our analysis uses SWITCH, an open-source capacity expansion model with a high spatial resolution for the entire Western Electricity Coordinating Council (WECC) in a zero-carbon scenario in 2050. We find that the number of consecutive days in the SBH changes both the total selected power and energy capacity of LDES when storage energy and power capacity overnight costs are $\$$13 USD/kWh (or less) and $113 USD/kW, respectively. We also find that the amount of required energy in storage to drive a future VRE-driven WECC grid ranges from 2.5 TWh to 16.0 TWh depending on the length of the SBH. The optimal storage duration (energy to power ratio) we obtain ranges from 10 h to 620 h among all the scenarios. Furthermore, depending on the storage cost assumption, we observe different charge/discharge patterns when varying the length of the SBH. Given our results, we anticipate that as more LDES technologies become commercially available, it will be critical to increase the length of the SBH to fully capture the benefits of LDES assets in long-term planning processes of high VRE-driven grids.

42 ENGINEERING↗

DOE OSTI2025

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs

The poor thermal properties of Aluminum–Gallium Nitride (AlGaN) channel High Electron Mobility Transistors (HEMTs) on sapphire limit the device’s maximum switching frequency due to high channel temperatures. Extracting the correct thermal time constants can provide guidelines for the device’s safe frequency operation. This study experimentally quantifies the impact of pulse width and duty cycle on the transient thermal dynamics of multi-finger AlGaN channel HEMTs. In most transient thermal metrology, lock-in averaging approaches are leveraged to increase signal-to-noise ratio and measure the device’s relative temperature rise. Assuming no heat accumulation, the temperature rise is used to quantify the device’s thermal resistance under continued pulsed biasing. For devices grown on sapphire substrates, however, heat accumulation leads to elevated reference temperatures and causes the differential measurement to underestimate the peak temperature. This study demonstrates the capability of transient Gate Resistance Thermometry (tGRT) to measure the absolute temperature, which is required to precisely evaluate the device’s thermal resistance. When an absolute temperature measurement is not feasible (such as thermoreflectance imaging), a solution is proposed to derive the peak temperature under pulsed biasing based on the differential temperature under pulsing and the steady-state thermal resistance (which is typically easier to obtain). Finally, additional tGRT (without averaging) is performed to demonstrate the temperature-dependent thermal time constants required to minimize heat accumulation effects.

Field effect transistors↗

DOE OSTI2025

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗

DOE OSTI2024

A magnetic diagnostic suite for the Pegasus-III experiment

Pegasus-III is an ultralow aspect ratio spherical tokamak providing a dedicated US experiment for comparative solenoid-free startup studies. A new magnetic diagnostic suite for equilibrium and low frequency (<200 kHz) magnetohydrodynamic mode analysis has been installed. These new diagnostics address the significant challenges of measuring magnetic field in a high noise environment with the majority constrained to fit in an 8 mm diagnostic gap on the high field side. Electrostatic switching noise generated by the 16 independent current feedback-controlled power supplies produces dV cm /dt ~ 1 kV/μs and volt level common mode noise on the magnetics. Immunity to this switching noise is accomplished through differential signal runs and signal processing, along with end-to-end electromagnetic interference shielding. The magnetic measurements are simultaneously digitized at 1 MHz and conditioned by precision 8 pole Butterworth filters with a corner frequency of 200 kHz to prevent aliasing down to the 16-bit level over the full passband. Ex-vessel calibrations of the B p coils were completed with a typical uncertainty of <0.5%. Stray toroidal field pickup from coil misalignment or positioning errors is corrected using a physics-based model. Comparisons of the corrected measurements to modeling agree to within 1.3% on average. This is within the 1.5% measurement uncertainty that a sensitivity analysis determined is needed for accurate fast boundary and equilibrium reconstruction.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2026

Commissioning of the Power Supplies and Coils of the SMART Tokamak

The small aspect ratio tokamak (SMART) is a spherical tokamak (ST) that offers unique capabilities for studying the potential of negative triangularity. It has been designed, constructed, and is currently being operated by the Plasma Science Fusion Technology (PSFT) Laboratory at the University of Seville. SMART has a total of 21 coils, organized into seven independent circuits and driven by five modular power supplies (PS). The PS operation relies on switching converter technology based on IGBT and supercapacitors (SCs). The PS delivers predefined current waveforms to the copper coil system consisting of the central solenoid (CS), 12 toroidal field (TF) coils, three series pairs of poloidal field (PF) coils, and two independent PF coils. This study details the commissioning and validation of the PS toroidal and solenoid coils, as well as the assembly of coils in SMART. The maximum rated current and slope were measured, along with the series impedance of the coils, the output current ripple, and the noise levels. The internal parameters of the SCs were measured, and optimized current profiles were proposed to enhance overall performance. A comparison has been made between the theoretical values and the experimental results, providing insight into the performance of the PS and areas for improvement.

Power electronics↗

DOE OSTI2020

Comprehensive Efficiency Analysis of Current Source Inverter Based SPM Machine Drive System for Traction Applications

A current-source inverter (CSI) has the natural capability of boosting the output voltage which is a notable advantage over voltage source inverter (VSI) in traction drive applications. This paper investigates the voltage boosting feature of the CSI to improve the overall efficiency of the CSI-based surface permanent magnet (SPM) machine drive system in the constant power region. The effects of the boost function on the total system losses, including the machine copper loss, core loss, and magnet loss, as well as the device conduction and switching loss in the CSI and dc/dc converter, are described using analytical models. The operating characteristics of the machine and CSI are validated by 2-D finite-element analysis (FEA) and simulations. Based on the loss model, the effects of the modulation index on the overall drive system losses and power factor have been analyzed. A genetic algorithm has been used to optimize the CSI's boost ratio, demonstrating that the drive system efficiency can be increased by 1% to 2.5% along the constant-power regime envelope by using the boost function.

current source inverter, genetic algorithm, SPM ma↗

DOE OSTI2023

20-kV GaN Switch Technology Demonstrated in High-Efficiency Medium-Voltage Power Module

GaN holds significant potential as a material for vertical p-n diodes, enabling the realization of devices with reverse breakdown voltages of 5 kV or higher. Carbon serves as the primary compensating dopant in the growth process, incorporated into GaN during metalorganic chemical vapor deposition (MOCVD) growth. The level of carbon incorporation depends on several factors, including growth rate, ammonia flow, temperature, pressure, and trimethylgallium (TMGa) flow. Through guided empirical modeling, the carbon incorporation in GaN growth could be predicted using a single parameter based on the ratio of ammonia flow to the growth rate. This model accurately predicts carbon concentrations ranging from 1x10 17 to 5x10 14 cm -3 while maximizing growth rates. Other extrinsic dopants have either been reduced below the threshold of consideration or modeled using similar single-parameter relationships. By identifying the dominant extrinsic dopants and accounting for them, an intrinsic defect with a concentration of 2.2x10 15 cm -3 was identified. By combining these relationships, growth conditions for n-GaN were optimized, resulting in electron concentrations as low as 1x10 15 cm -3 . Leveraging these techniques, p-n diodes were grown, achieving a reverse breakdown voltage as high as 3.1 kV.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Suppression of the vacuum space-charge effect in fs-photoemission by a retarding electrostatic front lens

The performance of time-resolved photoemission experiments at fs-pulsed photon sources is ultimately limited by the e–e Coulomb interaction, downgrading energy and momentum resolution. Here, we present an approach to effectively suppress space-charge artifacts in momentum microscopes and photoemission microscopes. A retarding electrostatic field generated by a special objective lens repels slow electrons, retaining the k-image of the fast photoelectrons. The suppression of space-charge effects scales with the ratio of the photoelectron velocities of fast and slow electrons. Fields in the range from -20 to 01100 V/mm for E kin = 100 eV to 4 keV direct secondaries and pump-induced slow electrons back to the sample surface. Ray tracing simulations reveal that this happens within the first 40 to 3 μm above the sample surface for E kin = 100 eV to 4 keV. An optimized front-lens design allows switching between the conventional accelerating and the new retarding mode. Time-resolved experiments at E kin = 107 eV using fs extreme ultraviolet probe pulses from the free-electron laser FLASH reveal that the width of the Fermi edge increases by just 30 meV at an incident pump fluence of 22 mJ/cm2 (retarding field -21 V/mm). For an accelerating field of +2 kV/mm and a pump fluence of only 5 mJ/cm 2 , it increases by 0.5 eV (pump wavelength 1030 nm). At the given conditions, the suppression mode permits increasing the slow-electron yield by three to four orders of magnitude. The feasibility of the method at high energies is demonstrated without a pump beam at E kin = 3830 eV using hard x rays from the storage ring PETRA III. The approach opens up a previously inaccessible regime of pump fluences for photoemission experiments.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Scalable photonic integrated circuits for high-fidelity light control

Advances in laser technology have driven discoveries in atomic, molecular, and optical (AMO) physics and emerging applications, from quantum computers with cold atoms or ions, to quantum networks with solid-state color centers. This progress is motivating the development of a new generation of optical control systems that can manipulate the light field with high fidelity at wavelengths relevant for AMO applications. These systems are characterized by criteria: (C1) operation at a design wavelength of choice in the visible (VIS) or near-infrared (IR) spectrum, (C2) a scalable platform that can support large channel counts, (C3) high-intensity modulation extinction and (C4) repeatability compatible with low gate errors, and (C5) fast switching times. Here, we provide a pathway to address these challenges by introducing an atom control architecture based on VIS-IR photonic integrated circuit (PIC) technology. Based on a complementary metal–oxide–semiconductor fabrication process, this atom-control PIC (APIC) technology can meet system requirements (C1)–(C5). As a proof of concept, we demonstrate a 16-channel silicon-nitride-based APIC with (5.8±0.4)ns response times and >30dB extinction ratio at a wavelength of 780 nm.

Menssen, Adrian J.↗

DOE OSTI2024

Reversible two-way tuning of thermal conductivity in an end-linked star-shaped thermoset

Polymeric thermal switches that can reversibly tune and significantly enhance their thermal conductivities are desirable for diverse applications in electronics, aerospace, automotives, and medicine; however, they are rarely achieved. Here, we report a polymer-based thermal switch consisting of an end-linked star-shaped thermoset with two independent thermal conductivity tuning mechanisms—strain and temperature modulation—that rapidly, reversibly, and cyclically modulate thermal conductivity. The end-linked star-shaped thermoset exhibits a strain-modulated thermal conductivity enhancement up to 11.5 at a fixed temperature of 60 °C (increasing from 0.15 to 2.1 W m –1 K –1 ). Additionally, it demonstrates a temperature-modulated thermal conductivity tuning ratio up to 2.3 at a fixed stretch of 2.5 (increasing from 0.17 to 0.39 W m –1 K –1 ). When combined, these two effects collectively enable the end-linked star-shaped thermoset to achieve a thermal conductivity tuning ratio up to 14.2. Moreover, the end-linked star-shaped thermoset demonstrates reversible tuning for over 1000 cycles. The reversible two-way tuning of thermal conductivity is attributed to the synergy of aligned amorphous chains, oriented crystalline domains, and increased crystallinity by elastically deforming the end-linked star-shaped thermoset.

42 ENGINEERING↗