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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Comparison of CCM- and CRM-Based Boost Parallel Active Power Decoupler for PV Microinverter

Single-phase inverter or rectifier systems often make use of an active power decoupler (APD) to balance the mismatch between constant dc power and fluctuating ac power. This article deals with the comparison of continuous conduction mode (CCM) and critical conduction mode (CRM) operation-based design of a parallel boost-type APD for photovoltaic microinverter applications. From a design perspective, multiobjective analysis of efficiency, volume, and cost is explored within a decision space including planar inductors, gallium nitride based devices, film capacitors, switching frequency, and modulation (CCM vs. CRM). The theoretical study analyzes all possible design configurations within CCM and CRM and identifies Pareto-optimal designs, from which the selected CRM design can achieve reduced system volume and lower cost with the use of smaller inductor core, while operating with similar California Energy Commission efficiency drop as the selected CCM design. From a control perspective, a pulsewidth modulation based control strategy is proposed to implement closed-loop CRM modulation that does not rely on zero-crossing detection. Furthermore, closed-loop systems are designed for the optimal CCM and CRM realizations, and the final system characteristics are compared. Experimental results, obtained using two separate 40-V, 400-W hardware prototypes for CCM and CRM, are presented to verify the analyses.

42 ENGINEERING↗
NASA NTRS1979

Modelling switching-time effects in high-frequency power conditioning networks

Power transistor networks which switch large currents in highly inductive environments are beginning to find application in the hundred kilohertz switching frequency range. Recent developments in the fabrication of metal-oxide-semiconductor field-effect transistors in the power device category have enhanced the movement toward higher switching frequencies. Models for switching devices and of the circuits in which they are imbedded are required to properly characterize the mechanisms responsible for turning on and turning off effects. Easily interpreted results in the form of oscilloscope-like plots assist in understanding the effects of parametric studies using topology oriented computer-aided analysis methods.

Owen, H. A.↗
DOE OSTI2020

Alternating Current Photovoltaic Effect

It is well known that the photovoltaic effect produces a direct current (DC) under solar illumination owing to the directional separation of light-excited charge carriers at the p–n junction, with holes flowing to the p-side and electrons flowing to the n-side. In this study, we found that apart from the DC generated by the conventional p–n photovoltaic effect, there is another new type of photovoltaic effect that generates alternating current (AC) in the nonequilibrium states when the illumination light periodically shines at the junction/interface of materials. The peak current of AC at high switching frequency can be much higher than that from DC. The AC cannot be explained by the established mechanisms for conventional photovoltaics; instead, it is suggested to be a result of the relative shift and realignment between the quasi-Fermi levels of the semiconductors adjacent to the junction/interface under the nonequilibrium conditions, which results in electron flow in the external circuit back and forth to balance the potential difference between two electrodes. By virtue of this effect, the device can work as a high-performance broadband photodetector with extremely high sensitivity under zero bias; it can also work as a remote power source providing extra power output in addition to the conventional photovoltaic effect.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Spin Waves and Magnetic Exchange Hamiltonian in CrSBr

Abstract CrSBr is an air‐stable two‐dimensional (2D) van der Waals semiconducting magnet with great technological promise, but its atomic‐scale magnetic interactions—crucial information for high‐frequency switching—are poorly understood. An experimental study is presented to determine the CrSBr magnetic exchange Hamiltonian and bulk magnon spectrum. The A ‐type antiferromagnetic order using single crystal neutron diffraction is confirmed here. The magnon dispersions are also measured using inelastic neutron scattering and rigorously fit the excitation modes to a spin wave model. The magnon spectrum is well described by an intra‐plane ferromagnetic Heisenberg exchange model with seven nearest in‐plane exchanges. This fitted exchange Hamiltonian enables theoretical predictions of CrSBr behavior: as one example, the fitted Hamiltonian is used to predict the presence of chiral magnon edge modes with a spin‐orbit enhanced CrSBr heterostructure.

2D materials↗
DOE OSTI2023

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

New wide band gap semiconductors are needed to increase the power, voltage, and switching frequency limits of power electronic devices. A recent computational search identified a family of ultrawide band gap (4.8-7.8 eV) group-III orthoborates as promising materials for power electronics, assuming n-type doping could be attained. In this report we test this assumption by investigating the defect chemistry and dopability of rhombohedral calcite-structured AlBO 3 , GaBO 3 , and InBO 3 using first-principles calculations. Of the three, we find InBO 3 to have the most potential for n-type doping without significant compensation by native acceptor defects. Furthermore, Zr is predicted to readily substitute for In and behave as a shallow donor with maximal net donor concentrations exceeding 1 x 10 18 cm -3 under growth conditions typical for this class of materials. We also demonstrate thin film growth of InBO3 and measure its absorption onset, which we find to be consistent with theory. Ultimately, our results confirm the promise of InBO 3 as an n-type ultrawide band gap semiconductor and point to alloying with GaBO 3 and AlBO 3 for further optimization of band gap and electron concentration for high-power applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

GaN‐based split phase transformer‐less PV inverter with auxiliary ZVT circuit

This paper explores performance enhancement of the common ground dynamic dc‐link (CGDL) inverter for single phase photovoltaic (PV) applications by a combination of gallium nitride (GaN) devices, split phase topology, coupled inductors, and zero voltage transition (ZVT) scheme. The CGDL inverter has the inherent advantage of minimised dc‐link capacitance and negligible leakage current due to the common ground configuration, but its reported efficiency was usually lower because of the higher dc‐link voltage used for the reduction of decoupling capacitance to a great extent. To solve the efficiency problem, in this study, a soft switching circuit is proposed for the first stage, while a coupled inductor integrated magnetics is incorporated in the second stage to reduce inductor loss, volume, and cost. Both of these topological improvements combined with the use of GaN devices facilitate in achieving high efficiency without compromising converter power density. Extensive experimental results are provided from a GaN based 1 kVA hardware prototype to demonstrate the superior performance of the CGDL inverter attaining a peak efficiency of 98.7% and a California Energy Commission efficiency of 98.5% at 75/50 kHz switching frequency.

Xia, Yinglai↗
DOE OSTI2020

First-principles study and experimental characterization of metal incorporation in germanium telluride

Germanium telluride is a well-known phase change material (PCM) used in non-volatile memory cells and radio frequency switches. Controlling the properties of GeTe for improved PCM device performance has sometimes been achieved by doping and/or alloying with metals, often at concentrations greater than 10 at. % and using non-equilibrium methods. Here, since switching PCMs between the low-resistance crystalline and high-resistance amorphous states requires a heating cycle, the stability of metal-incorporated GeTe (Ge 0.5–x M x Te 0.5 ) films is also critical to practical implementation of these materials in electronic and optoelectronic devices. In this work, we use both density-functional theory and experimental characterization methods to probe the solubility and critical properties of Ge 0.5–x M x Te 0.5 films. Using first-principles calculations, we determine the enthalpy of formation for GeTe with 2.08, 4.17, and 6.25 at. % of Cu, Fe, Mn, Mo, and Ti and show trends between the stability of the Ge 0.5–x M x Te 0.5 systems and the atomic position, composition, and distribution of the metal atoms in the GeTe matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs

The poor thermal properties of Aluminum–Gallium Nitride (AlGaN) channel High Electron Mobility Transistors (HEMTs) on sapphire limit the device’s maximum switching frequency due to high channel temperatures. Extracting the correct thermal time constants can provide guidelines for the device’s safe frequency operation. This study experimentally quantifies the impact of pulse width and duty cycle on the transient thermal dynamics of multi-finger AlGaN channel HEMTs. In most transient thermal metrology, lock-in averaging approaches are leveraged to increase signal-to-noise ratio and measure the device’s relative temperature rise. Assuming no heat accumulation, the temperature rise is used to quantify the device’s thermal resistance under continued pulsed biasing. For devices grown on sapphire substrates, however, heat accumulation leads to elevated reference temperatures and causes the differential measurement to underestimate the peak temperature. This study demonstrates the capability of transient Gate Resistance Thermometry (tGRT) to measure the absolute temperature, which is required to precisely evaluate the device’s thermal resistance. When an absolute temperature measurement is not feasible (such as thermoreflectance imaging), a solution is proposed to derive the peak temperature under pulsed biasing based on the differential temperature under pulsing and the steady-state thermal resistance (which is typically easier to obtain). Finally, additional tGRT (without averaging) is performed to demonstrate the temperature-dependent thermal time constants required to minimize heat accumulation effects.

Field effect transistors↗
DOE OSTI2026

Flashlamp drive system for a high-energy 10–100 kHz pulse-burst Nd:YAG laser

We present the design of the flashlamp drive system for the NG100 laser, a 1 J/pulse, 10–100 kHz, pulse-burst Nd:YAG laser system being developed for application in a Thomson scattering plasma diagnostic. This flashlamp drive system is under active development, with a prototype now being constructed. The flashlamp drive system is modular, with each module capable of driving a series pair of linear flashlamps. Each drive module contains and is controlled by a dedicated Analog Regulator Controller. Thus each module is independently operable and controllable. This modular approach imposes no intrinsic limit to the number of modules that may be applied to drive the flashlamp pairs in a laser system. Each flashlamp drive module has a switch-regulated topology. An 1800 V main capacitor bank provides 25 kJ of energy storage, while a lower voltage output capacitor bank provides filtering and the initial energy delivered to the flashlamps at the start of the drive pulse. The main bank is recharged after each flashlamp drive pulse. As energy is drawn from the output bank by the flashlamps, an IGBT switching regulator feeds current from the main bank through an inductor to replenish the output capacitor bank. The rate of replenishment is feedback-controlled to maintain a regulated supply of power to the flashlamp load, with a setpoint range of 0.07 to 1.65 MW. An Analog Regulator Controller produces two-state variable pulse width feedback switching of the regulator IGBT. The switching frequency is ≤ 20 kHz, dynamically adjusted to limit ripple of the flashlamp power to ±3% statistical standard deviation of mean. For development or troubleshooting, each module is operable independent of the laser digital control system (microcontroller and FPGA).

Plasma diagnostics - interferometry↗
DOE OSTI2020

A Novel AC to AC Wireless Power Transfer System for EV Charging Applications

In this paper, a novel ac to ac wireless power transfer (WPT) system is introduced for electric vehicle (EV) charging applications to reduce cost and design complexity. The presented wireless power transfer concept achieves unity power factor (UPF) on the grid-side by using a hybrid frequency ac / ac converter without an additional converter stage and closed loop control compared to the conventional systems. Due to inherent merit of the proposed ac / ac converter, ac input with 60 Hz grid frequency can be directly transferred to the load by superimposing with high frequency switching signal through the wireless coils. To validate the theoretical analysis of the proposed WPT system, the experimental results of the proposed converter are provided for 650 W output power by using 6 inches air gap between the couplers with the input of 110 VRMS ac source. The system overall efficiency is measured 89 % achieving 0.99 power factor (PF) and 1.5 % current total harmonic distortion (THD).

Asa, Erdem↗
DOE OSTI2021

Adaptive Time-Division Multiplexing Driving System for Solid State Lighting with Multiple Tunable Channels

Next generation solid state lighting enables unlimited control of light and serve much broader functions beyond the basic lighting for illuminance. The emerging lighting for productivity, well-being, healthcare, and growth have revolutionized the scope of lighting. To empower this unlimited controllability, a multi-channel tunable power-electronics driver is essential but has not been satisfactorily addressed so far. Existing solutions are lossy, large, and expensive, due to introduction of additional buck power conversion stages. This paper proposes a time-division multiplexing (TDM) LED driving system which eliminates those buck stages. The proposed design can directly pair with off-the-shelf pulse width modulated (PWM) controllers and since it inherits entire feature sets, it can achieve low loss at standby and at dimmed condition. The simple analog implementation avoids usage of expensive DSPs/MCU. GaN’s high switching frequency capability can push up the multiplexing frequency so a GaN-based flyback was built and proved the concept.

Xue, Lincoln↗
DOE OSTI2025

Wireless Pulse-Width Modulation Control of Power Converters Using Ultra-Wideband Technology for Distributed High-Voltage Systems

In this study, we present a new approach for wireless pulse-width modulation (PWM) control of a power converter, applicable to numerous power converters within a complex electrical distribution system. This method eliminates the need for multiple physical connections of gating/PWM signals among distributed converter modules. By using ultra-wideband-based communication, the PWM control signals can be wirelessly transmitted from a central controller to multiple converters simultaneously and seamlessly. System stability is thoroughly analyzed, and experimental results validate the efficacy of the wireless control scheme for a buck converter operating at a 50-kHz switching frequency. The minimum latency obtained from this setup is 5.38 ..mu..s. This control concept offers easier implementation of distributed control in high-voltage power systems, especially in multilevel architectures, even under harsh conditions with ambient noise.

ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2023

Efficiency and Output Power Sensitivity to Control Parameter Variations in an LCC-Series Wireless Power Transfer System

In wireless power transfer (WPT) systems, output power (Pout) can be controlled through input parameters such as, input voltage (Vin) , duty cycle (d) , and switching frequency (fsw) . The impact of these control parameters on the overall system efficiency has not been explored in previous studies. This paper focuses on the efficiency (η) and Pout sensitivity to these control parameter variations in an LCC-Series tuned WPT system. There are multiple combinations of Vin, d , and fsw that can achieve a specified target Pout . However, it is important to determine the optimal combination of these control variables that will yield the maximum η for a target Pout . A MATLAB/Simulink model is built to calculate and measure η and Pout . In order to achieve this result, several simulations are run where Vin,d , and fsw are swept across a wide range to cover all possible combinations. MATLAB's Sensitivity Analysis toolbox is used to evaluate how the parameters influence the model's output. Finally, an experimental prototype is implemented. The optimal values acquired using the sensitivity analysis is then plugged into the hardware prototype and compared with the simulation. The results obtained confirm the validity of the proposed method.

Harave, Sudarshan↗
DOE OSTI2026

Self-Cooling Multiferroic Magnetic Devices

Increasing switching frequency reduces magnetic volume, but conventional ferrites, used from tens to hundreds of kilohertz, cannot sustain the temperature and frequency ranges demanded by current and emerging wide bandgap and ultrawide bandgap devices. Here, this work presents a novel magnetic material architecture combining nanocrystalline magnetic material and multiferroic layers for megahertz power conversion. The high saturation flux density of nanocrystalline alloys supports miniaturization but is traditionally constrained by excessive losses above 10 kHz. A revolutionary multiferroic material with solid-state cooling via caloric materials is defined that will enable the next generation of magnetic devices for wide-bandgap-integrated designs. This letter highlights the fundamental physics behind this capability alongside early development of a finite element analysis for the multiferroic-based magnetic device using ANSYS, showing that the core achieves more uniform thermal distribution and reduces peak temperature by 9 ° C compared to conventional ferrites.

Soft magnetic materials↗
DOE OSTI2021

High-Fidelity Models and Fast EMT Simulation Algorithms for Isolated Multi-port Autonomous Reconfigurable Solar power plant (MARS)

The integration of hybrid photovoltaic (PV) and energy storage system (ESS) based plants has become a promising way of solving the intermittency of PV plants and providing frequency support to the power grid. The multi-port autonomous reconfigurable solar power plant (MARS) can integrate the PV systems and ESSs to an ac grid and dc lines. The proposed isolated MARS incorporates an isolated converter that connects to the PV arrays and is based on the dual active bridge (DAB) converter. The high frequency switching in the DAB and the means to control the DAB converter using delays between switching signals lead to the need for a small timestep in simulations. Moreover, several hundreds of modules that include a DAB converter are present in the MARS. The small timestep and the presence of several hundreds of modules lead to a significant rise in the overall simulation time. To address this issue, simulation algorithms like numerical stiffness-based hybrid discretization and the hysteresis relaxation technique are applied to the switched system model of isolated MARS. Additionally, an event-driven interpolating method is introduced to help increase the minimum timestep to simulate the conventional DAB converter model while maintaining high accuracy in the simulation results. The developed model is validated by comparison with its reference model built in the PSCAD/EMTDC and MATLAB software environments using library components.

Xia, Qian↗
DOE OSTI2021

Electrical and Thermal Performance of Ga₂O₃–Al₂O₃–Diamond Super-Junction Schottky Barrier Diodes

The design space of Ga 2 O 3 -based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction device concept, which can alleviate the constraints associated with Ga 2 O 3 -based devices. The improvements achieved using the proposed device concept are demonstrated through electrical and thermal simulations of Ga 2 O 3 –Al 2 O 3 –diamond-based super-junction Schottky barrier diodes (SJ-SBDs) and non-punch-through or conventional Schottky barrier diodes (NP-SBDs). The SJ-SBD enables operation below the R ON -breakdown voltage limit of Ga 2 O 3 NP-SBD, enabling >4 kV blocking voltage at R ON of 1–3 mΩ cm 2 . Here, the maximum switching frequency of SJ-SBD may be only a few kHz, as it is limited by the activation energy of acceptors (0.39 eV) in the diamond. Crucially, compared with NP-SBD, the use of diamond also results in ~60% reduction in temperature rise during static power dissipation. Polycrystalline diamond (PCD) properties depend on detailed microstructure and benefits compared to ideal Ga 2 O 3</sub NP-SBD arise for diamond critical fields ≥6 MV/cm and thermal conductivities as low as 50–150 W/(m • K).

36 MATERIALS SCIENCE↗
DOE OSTI2020

A Generic Multivector Model Predictive Control With Symmetric Pulse Pattern for Hybrid Multilevel Converters

This article presents a generic multivector model predictive control (MV-MPC) method that has the potential to be applied to all hybrid multilevel converters (HMCs). It first locates the reference voltage vector in the 120° oblique coordinate to select the three adjacent voltage vectors to be applied over one control cycle. Then, the current tracking is guaranteed through duty cycle optimization and dc capacitor voltages are balanced by evaluating possible switching sequences that belong to the voltage vectors with optimal duty cycles. At last, the optimal switching sequence with a symmetric five- or seven-segment pulse pattern is generated using an external modulator. Here, the proposed generic MV-MPC can significantly improve the quality of the output current, while achieving a constant equivalent switching frequency at the same time. Experimental studies on an all silicon carbide HMC prototype, i.e., an active neutral point clamped converter with cascaded H-bridge, are presented to validate the effectiveness of the proposed MV-MPC strategy.

42 ENGINEERING↗
DOE OSTI2020

Paralleling of LLC Resonant Converters

The LLC resonant converter is a popular, variable switching frequency DC-DC converter that may be controlled using two methods: charge and frequency control. In this paper, the application of LLC resonant converters to input-parallel, output-parallel system is studied. In this respect, the models of output-port I-V characteristics and small-signal output impedance of the charge controlled LLC converter are proposed. In addition, a mathematical framework is developed for droop-based paralleled DC-DC systems. Here, it distinctly identifies the output DC voltage and circulating current modes of stability, even in systems comprising of non-identical converters.

42 ENGINEERING↗