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At least 127 records · Page 7

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NASA NTRS1995

B-ISBN Onboard Processing Fast Packet Switch Developed

Future satellite communications applications will require a packet-switched onboard satellite processing system to route packets at very high speeds from uplink beams to different downlink beams. The rapid emergence of point-to-multipoint services, and the important role of satellites in a national and global information infrastructure, makes the multicast function essential to a fast packet switch (FPS). NASA Lewis Research Center's Digital System Technology Branch has been studying possible architectures for high-speed onboard-processing satellite systems. As part of this research, COMSAT Laboratories developed a broadband integrated services digital network (B-ISDN) fast packet switch for Lewis that was delivered on December 1994. The fast packet switch consists of eight inputs and eight outputs that can receive and transmit data, respectively, at a rate of 155 Mbps. The switch features multiple priorities (three) and multiple-size (three) satellite virtual cells that are similar to ATM cells in length (52 bytes). In addition, the fast packet switch features a congestion-control algorithm that allows users to set different thresholds for individual destination ports, thus throttling back the traffic from the transmitting port.

Source record↗

NASA NTRS2005

Ka-Band, MEMS Switched Line Phase Shifters Implemented in Finite Ground Coplanar Waveguide

Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.

Scardelletti, Maximilian C.↗

NASA NTRS2008

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Stuart, Thomas A.↗

NASA NTRS2009

MEMS switches having non-metallic crossbeams

A RF MEMS switch comprising a crossbeam of SiC, supported by at least one leg above a substrate and above a plurality of transmission lines forming a CPW. Bias is provided by at least one layer of metal disposed on a top surface of the SiC crossbeam, such as a layer of chromium followed by a layer of gold, and extending beyond the switch to a biasing pad on the substrate. The switch utilizes stress and conductivity-controlled non-metallic thin cantilevers or bridges, thereby improving the RF characteristics and operational reliability of the switch. The switch can be fabricated with conventional silicon integrated circuit (IC) processing techniques. The design of the switch is very versatile and can be implemented in many transmission line mediums.

Scardelletti, Maximillian C↗

NASA NTRS2011

MOSFET Switching Circuit Protects Shape Memory Alloy Actuators

A small-footprint, full surface-mount-component printed circuit board employs MOSFET (metal-oxide-semiconductor field-effect transistor) power switches to switch high currents from any input power supply from 3 to 30 V. High-force shape memory alloy (SMA) actuators generally require high current (up to 9 A at 28 V) to actuate. SMA wires (the driving element of the actuators) can be quickly overheated if power is not removed at the end of stroke, which can damage the wires. The new analog driver prevents overheating of the SMA wires in an actuator by momentarily removing power when the end limit switch is closed, thereby allowing complex control schemes to be adopted without concern for overheating. Either an integral pushbutton or microprocessor-controlled gate or control line inputs switch current to the actuator until the end switch line goes from logic high to logic low state. Power is then momentarily removed (switched off by the MOSFET). The analog driver is suited to use with nearly any SMA actuator.

Gummin, Mark A.↗

NASA NTRSDate not supplied

Asymmetric Flow State Switching in the Space Launch System Block 2 Liftoff Environment

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using force measurements, two-component particle image velocimetry, and tuft flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tuft visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗

NASA NTRSDate not supplied

Asymmetric Flow State Switching on the Space Launch System (SLS) Block 2 Crew Vehicle

An in-depth investigation was conducted at the NASA Langley Research Center 14- by 22-Foot Subsonic Tunnel to evaluate flow state switching in the liftoff flow environment of the Space Launch System Block 2 Crew launch vehicle using side force measurements, two-component particle image velocimetry, and tufts flow visualization. Multimodal flow states were observed in the gap flow between the centerbody and solid rocket boosters at a range of incoming flow angles and were characterized for the relative strength of state switches. When flow switches occur, the flow is predominantly bimodal, but trimodal flow states are observed with the launch tower downstream of the vehicle. Tufts visualization indicates three-dimensionality during flow state switching, which initiates at one part of the gap and quickly transitions throughout the length of the booster. Due to the long time scales between switches, statistics such as frequency of flow state switches and converged state probabilities cannot be established without significantly increased acquisition times.

Lee J. Mears↗

DOE OSTI2025

Design and Commission of Solid State Switch Driver in SLAC Subbooster Modulator

The LINAC sub-booster modulator is a pulsed power supply to provide a 30kV pulse to drive a klystron in SLAC LINAC. It has utilized vacuum tetrode as pulse switch for more than 60 years. With the vacuum tetrode availability becoming less and its cost surging, a natural choice is to use solid state switch in this pulsed power modulator. To commission solid state switch in LINAC sub-booster modulator, a driver board is designed to drive a BEHLKE HTS-LC2 series MOSFET based switches. The design concept and some concerns in design will be presented. The driver board is universal for all HTS-LC2 series switches because they share the same driver signals and connections. After the driver is commissioned, two AI systems are introduced to design one core part of the driver, the results are presented here. During the commission of the driver board in the LINAC sub-booster modulators, some problems happened and were addressed.

AI Circuit Design↗

DOE OSTI2024

Giant resistance switch in twisted transition metal dichalcogenide tunnel junctions

Resistance switching in multilayer structures are typically based on materials possessing ferroic orders. Here, in this work, we predict an extremely large resistance switching based on the relative spin–orbit splitting in twisted transition metal dichalcogenide (TMD) monolayers tunnel junctions. Because of the valence band spin splitting which depends on the valley index in the Brillouin zone, the perpendicular electronic transport through the junction depends on the relative reciprocal space overlap of the spin-dependent Fermi surfaces of both layers, which can be tuned by twisting one layer. Our quantum transport calculations reveal a switching resistance larger than 10 6 % when the relative alignment of TMDs goes from 0° to 60° and when the angle is kept fixed at 60° and the Fermi level is varied. By creating vacancies, we evaluate how inter-valley scattering affects the efficiency and find that the resistance switching remains large (10 4 %) for typical values of vacancy concentration. Not only should this resistance switching be observed at room temperature due to the large spin splitting, but our results also show how twist angle engineering and control of van der Waals heterostructures could be used for next-generation memory and electronic applications.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Cavity-assisted magnetization switching in a quantum spin-phonon chain

Néel order switching in antiferromagnets has typically required intense optical driving, leading to substantial heating and limited efficiency. By placing antiferromagnets inside a terahertz-driven optical cavity, we propose a multi-particle mechanism for Néel order switching that benefits from reduced heating. Our analysis reveals that phonons are indispensable to this mechanism. A driven cavity mode couples to a spin-phonon chain, with all excitations dissipating energy through external baths. Mean-field analysis shows that cavity photons induce sublattice spin-density imbalance—an intrinsic symmetry-breaking effect absent without the cavity. Contrary to known (1–10 V/nm) laser fields required to switch the Néel order, our mechanism enables switching at remarkably low laser fields (1–5 V/μm), selectively targeting low-energy and perpendicular magnon modes. By virtue of the suppressed heating, the switching remains highly tunable through laser fluence, damping, and photon loss, establishing a low-dissipation route toward cavity-assisted opto-spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2009

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

plasma-enhanced chemical vapor deposition (PECVD).↗

NASA NTRS2008

Carbon Nanotube Switches for Communication and Memory Applications

Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.

memory devices↗

DOE OSTI2025

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗

DOE OSTI2024

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal Gd x Co 100-x . Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the Gd x Co 100-x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted Gd x Co 100-x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗

NASA NTRS1975

Exciter switch

A new exciter switch assembly has been installed at the three DSN 64-m deep space stations. This assembly provides for switching Block III and Block IV exciters to either the high-power or 20-kW transmitters in either dual-carrier or single-carrier mode. In the dual-carrier mode, it provides for balancing the two drive signals from a single control panel located in the transmitter local control and remote control consoles. In addition to the improved switching capabilities, extensive monitoring of both the exciter switch assembly and Transmitter Subsystem is provided by the exciter switch monitor and display assemblies.

Mcpeak, W. L.↗

NASA NTRS1976

The dc-to-dc converters employing staggered-phase power switches with two-loop control

A switched inductor voltage is coupled to a sense winding in each phase, and all sense windings are connected in series to one of two feedback loops to provide a signal that indicates when one of the power switches is on as the principal determinant of switching instants. A sequencer is triggered each time a pulse generator is triggered to turn on a different power switch in sequence at each switching instant.

Wester, G. W.↗

NASA NTRS1978

High-power RF switch

Switch designed for vacuum environments can handle 5 kilowatts of microwave power. Arcing between conductors is prevented by filling gaps with Teflon rather than with inert gas as in conventional switches. Thus, switch is not susceptible to gas leakage, problem faced by conventional switches in high-vacuum applications. Compact three-port switch, developed for microwave radar transmitters aboard spacecraft, is operated by depressing spring-mounted insulating pins that can be remotely actuated by relay. When pin is depressed, it routes microwave signals to selected output port.

Caro, E. R.↗