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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
NASA NTRS1968

Surface effects and submerged features

Investigating color and thermal anomalies, wave refraction effects, and time differences of reflected laser pulses for identification and location of submerged features

Polcyn, F. C.↗
NASA NTRS1982

Correction of lunar seismograms for instrumental and near-surface effects and constraints on the velocity structure of the lunar interior

Long-period lunar seismograms were studied with the aim of identifying consistent sets of direct shear and secondary wave arrivals, thus constraining the velocities in the lunar mantle and the depths of the velocity discontinuities. Two velocity models were used to locate the natural impacts and the shallow moonquakes and to obtain the travel time residuals. Seismic sections were made of the radial, transverse, and vertical components of ground motion for impacts, shallow, and deep moonquakes in order to search for consistent sets of secondary wave arrivals. No conclusive set of secondary arrivals could be recognized on the seismic sections and thus the velocities and depths of the velocity discontinuities cannot be severely constrained by secondary arrivals. It is likely that the crust is thinner than 50 km and that a first-order discontinuity separates the upper and lower crust at a depth of between 20 and 30 km.

Horvath, P.↗
NASA NTRS1983

An experimental investigation of control surface effectiveness and real-gas simulation for biconics

Aerodynamic coefficients, pressure distributions, and oil-flow patterns measured on spherically blunted, 13 degrees/7 degrees on-axis and bent biconics at Mach 6 and 10 in air are compared. Angle of attack, referenced to the axis of the aft cone, was varied from zero to 40 degrees. The effect of deflection of base-mounted flaps on aerodynamic characteristics was examined at Mach 10. Real-gas effects on aerodynamic coefficients, pressure distributions and shock detachment distance were simulated by testing the biconic models in Mach 6 air and Mach 6 CF4 flows. (Density ratio equal to 5.3 for air and 12 for CF4.) The on-axis biconic is stable but cannot be trimmed at angles of attack above zero with the assumed center of gravity and flap configuration. Flaps on the bent biconic produced a stable and trim configuration for angles of attack from zero to 23 degrees. A significant effect of density ratio on aerodynamic coefficients, pressure distribution, and shock detachment distance was observed.

Miller, C. G.↗
NASA NTRS1997

Design of a Minimum Surface-Effect Tendon-Based Microactuator for Micromanipulation

A piezoelectric (PZT) stack-based actuator was developed to provide a means of actuation with dynamic characteristics appropriate for small-scale manipulation. In particular, the design incorporates a highly nonlinear, large-ratio transmission that provides approximately two orders of magnitude motion amplification from the PZT stack. In addition to motion amplification, the nonlinear transmission was designed via optimization methods to distort the highly non-uniform properties of a piezoelectric actuator so that the achievable actuation force is nearly constant throughout the actuator workspace. The package also includes sensors that independently measure actuator output force and displacement, so that a manipulator structure need not incorporate sensors nor the associated wires. Specifically, the actuator was designed to output a maximum force of at least one Newton through a stroke of at least one millimeter. For purposes of small-scale precision position and/or force control, the actuator/sensor package was designed to eliminate stick-slip friction and backlash. The overall dimensions of the actuator/sensor package are approximately 40 x 65 x 25 mm.

Goldfarb, Michael↗