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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The nanoscale light control for absorption enhancement of organic photovoltaic (OPV) devices inevitably produces strongly non-uniform optical fields. These non-uniformities due to the localized optical modes are a primary route toward absorption enhancement in OPV devices. Therefore, a rigorous modeling tool taking into account the spatial distribution of optical field and carrier generation is necessary. Presented here is a comprehensive numerical model to describe the coupled optical and electrical behavior of plasmon-enhanced polymer:fullerene bulk heterojunction (BHJ) solar cells. In this model, a position-dependent electron-hole pair generation rate that could become highly non-uniform due to photonic nanostructures is directly calculated from the optical simulations. By considering the absorption and plasmonic properties of nanophotonic gratings included in two different popular device architectures, and applying the Poisson, current continuity, and drift/diffusion equations, the model predicts quantum efficiency, short-circuit current density, and desired carrier mobility ratios for bulk heterojunction devices incorporating nanostructures for light management. In particular, the model predicts a significant degradation of device performance when the carrier species with lower mobility are generated far from the collecting electrode. Consequently, an inverted device architecture is preferred for materials with low hole mobility. This is especially true for devices that include plasmonic nanostructures. Additionally, due to the incorporation of a plasmonic nanostructure, we use simulations to theoretically predict absorption band broadening of a BHJ into energies below the band gap, resulting in a 4.8% increase in generated photocurrent.
Abstract Not Provided
Alkali antimonides have a long history as visible-light-sensitive photocathodes. This work focuses on the process of fabrication of the bi-alkali photocathodes, K{sub 2}CsSb. In-situ synchrotron x-ray diffraction and photoresponse measurements were used to monitor phase evolution during sequential photocathode growth mode on Si(100) substrates. The amorphous-to-crystalline transition for the initial antimony layer was observed at a film thickness of 40 Å . The antimony crystalline structure dissolved upon potassium deposition, eventually recrystallizing upon further deposition into K-Sb crystalline modifications. This transition, as well as the conversion of potassium antimonide to K{sub 2}CsSb upon cesium deposition, is correlated with changes in the quantum efficiency.
Here, we present x-ray resonant magnetic dichroism and x-ray resonant magnetic scattering measurements of the temperature dependence of magnetism in Pr-doped La-Ca-Mn-O films grown on (110) NdGaO{sub 3} substrates. We observed thermal hysteresis of the ferromagnetism in one film that also showed large thermal hysteresis of ∼18 K in transport measurements. While in a second film of a different nominal chemistry, which showed very small thermal hysteresis ∼3 K in transport measurements, no thermal hysteresis of the ferromagnetism was observed. These macroscopic properties are correlated with evolution of surface magnetization across metal insulator transition for these films as observed by soft x-ray resonant magnetic scattering measurements.
In situ x-ray absorption spectroscopy (XAS) provides element specific characterization of both crystalline and amorphous phases and enables direct correlations between electrochemical performance and structural characteristics of cathode and anode materials. In situ XAS measurements are very demanding to the design of the experimental setup. We have developed the sample chamber that provides electrical connectivity and inert atmosphere for the operating electrochemical cells and also accounts for x-ray interactions with chamber and the cell materials. The design of the sample chamber for in situ measurements is presented along with the example XAS spectra from the anode materials in operating pouch cells at Zn and Sn K-edges measured.in fluorescence and transmission modes respectively.
The bulk and 2-dimensional (2D) electrical transport properties of heavily Mg-doped p-type GaN films grown on AlN buffer layers by Metal Modulated Epitaxy are explored. Distinctions are made between three primary p-type conduction mechanisms: traditional valence band conduction, impurity band conduction, and 2D conduction within a 2D hole gas at a hetero-interface. The bulk and 2D contributions to the overall carrier transport are identified and the relative contributions are found to vary strongly with growth conditions. Films grown with III/V ratio less than 1.5 exhibit high hole concentrations exceeding 2 × 10{sup 19} cm{sup −3} with effective acceptor activation energies of 51 meV. Films with III/V ratios greater than 1.5 exhibit lower overall hole concentrations and significant contributions from 2D transport at the hetero-interface. Films grown with III/V ratio of 1.2 and Mg concentrations exceeding 2 × 10{sup 20} cm{sup −3} show no detectable inversion domains or Mg precipitation. Highly Mg-doped p-GaN and p-AlGaN with Al fractions up to 27% similarly exhibit hole concentrations exceeding 2 × 10{sup 19} cm{sup −3}. The p-GaN and p-Al{sub 0.11}Ga{sub 0.89}N films show broad ultraviolet (UV) photoluminescence peaks, which intercept the valence band, supporting the presence of a Mg acceptor band. Finally, a multi-quantum-well light-emitting diode (LED) and p-i-n diode are grown, both of which demonstrate rectifying behavior with turn-on voltages of 3–3.5 V and series resistances of 6–10 Ω without the need for any post-metallization annealing. The LED exhibits violet-blue luminescence at 425 nm, while the p-i-n diode shows UV luminescence at 381 nm, and both devices still show substantial light emission even when submerged in liquid nitrogen at 77 K.
Recent calculations predict a super-thermal-conductivity of ~2000 Wm -1 K -1 , comparable to that of diamond, in cubic boron arsenide (BAs) crystals, which may offer inexpensive insulators with super-thermal-conductivity for microelectronic device applications. We have synthesized and characterized here single crystals of BAs with a zinc blende cubic structure and lattice parameters of a = 4.7830(7) Å. A relatively high thermal conductivity of ~200 Wm -1 K -1 is obtained, close to those of best non-carbon crystal insulators, such as SiC, although still an order of magnitude smaller than the value predicted. Based on our XPS, X-ray single crystal diffraction, and Raman scattering results, steps to achieve the predicted super-thermal conductivity in BAs are proposed.
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We use a sample of diphoton+dijet events to measure the effective cross section of double parton interactions, which characterizes the area containing the interacting partons in proton-antiproton collisions, and find it to be σeff=19.3±1.4(stat)±7.8(syst) mb. The sample was collected by the D0 detector at the Fermilab Tevatron collider in pp¯ collisions at s=1.96 TeV and corresponds to an integrated luminosity of 8.7 fb-1.
FABP5 was recently found to intracellularly transport endocannabinoid signaling lipids. The structures of FABP5 complexed with two endocannabinoids and an inhibitor were solved. Human FABP5 was found to dimerize via a domain-swapping mechanism. This work will help in the development of inhibitors to raise endocannabinoid levels. In addition to binding intracellular fatty acids, fatty-acid-binding proteins (FABPs) have recently been reported to also transport the endocannabinoids anandamide (AEA) and 2-arachidonoylglycerol (2-AG), arachidonic acid derivatives that function as neurotransmitters and mediate a diverse set of physiological and psychological processes. To understand how the endocannabinoids bind to FABPs, the crystal structures of FABP5 in complex with AEA, 2-AG and the inhibitor BMS-309403 were determined. These ligands are shown to interact primarily with the substrate-binding pocket via hydrophobic interactions as well as a common hydrogen bond to the Tyr131 residue. This work advances our understanding of FABP5–endocannabinoid interactions and may be useful for future efforts in the development of small-molecule inhibitors to raise endocannabinoid levels.
The ongoing changes in the generation resource mix, driven by the rapid adoption of inverter-based resources (IBR) as well as the early retirement of synchronous generators, are bringing new challenges to the planning and operation of bulk electric power systems. Consequently, there is an increasing need to understand, design, and quantify the reliability service provision from IBRs by performing integrated scheduling and dynamic simulations. However, test systems that have consistent scheduling and dynamic models rarely exist largely because of the decoupled nature of the two simulations on a synchronous generator-dominated system. This paper develops the dynamic model of a reduced Western Electricity Coordinating Council (WECC) system. In conjunction with the existing scheduling model, it is suitable for integrating scheduling and dynamic simulations. The reduced 240-bus WECC model reflects the generation resource mix of the Western Interconnection as of 2018. Moreover, the developed dynamic model is validated against field frequency events measured by FNET/GridEye and preserves the dominant inter-area oscillation mode in WECC.
Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.
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Abstract Insufficiently calibrated forest parameters of the Soil & Water Assessment Tool (SWAT) may introduce uncertainties to water resource projections in forested watersheds. In this study, we improved SWAT forest parameterization and phosphorus cycling representations to better simulate forest ecosystems in the St. Croix River basin, and we further examined how those improvements affected model projections of streamflow, sediment, and nitrogen export under future climate conditions. Simulations with improved forest parameters substantially reduced model estimates of water, sediment, and nitrogen fluxes relative to those based on default parameters. Differences between improved and default projections can be attributed to the enhanced representation of forest water consumption, nutrient uptake, and protection of soil from erosion. Better representation of forest ecosystems in SWAT contributes to constraining uncertainties in water resource projections. Results of this study highlight the importance of improving SWAT forest ecosystem representations in projecting delivery of water, sediment, and nutrients from land to rivers in response to climate change, particularly for watersheds with large areas of forests. Improved forest parameters and the phosphorus weathering algorithms developed in this study are expected to help enhance future applications of SWAT to investigate hydrological and biogeochemical consequences of climate change.