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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. In this work, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.

36 MATERIALS SCIENCE↗

Evaluation of a 5kW Solid Oxide Electrolysis Cell Stack

Electrolysis is the process of combining water and energy to produce oxygen and hydrogen gas. A solid oxide electrolysis cell (SOEC) is a type of high-temperature electrochemical cell used to yield hydrogen from steam. Many of these cells are put together to form an SOEC stack which operates between 600°C and 1000°C. There are several electrochemical methods for producing hydrogen, but the benefit of high-temperature electrolysis (HTE) in SOECs is they exhibit very high electrical efficiency and the potential for harnessing excess heat from other industrial processes such as nuclear power generation, fertilizer production, and chemical production.

08 - HYDROGEN↗

arco (Assembled Resource-Constrained Optimization) [SWR-26-030]

Arco (Assembled Resource-Constrained Optimization) is a memory-smart optimization DSL and solver for LP and MIP problems on constrained hardware. The software is an optimization framework built around a KDL-based domain-specific language and a CLI compiler/solver. You write optimization models in .kdl files, and the arco CLI compiles, validates, inspects, and solves them. Language bindings (Python today, more planned) provide programmatic access to the same engine. Built for harder optimization problems on constrained resources, Arco is intentional about every allocation, careful with stack and heap behavior, and relentless about minimizing memory usage so more systems can run real workloads. Arco is built primarily for internal use within our organization. You are welcome to try it, but we make no guarantees about API stability or robustness at this stage

Sanchez Perez, Pedro Andres [National Laboratory o↗

Exploring the Use of Flexible Circuit Boards to the Increase Power Density of a Rotary Triboelectric Nanogenerator

EExpansion on previous triboelectric nanogenerator (TENG) research that investigated a freestanding rotary TENG. The previous prototype used a single printed circuit board (PCB) stator with exposed copper electrodes and an arcylic rotor with vinyl-cut fluorinated ethylene propylene (FEP) wedges. The second generation prototype again used a PCB stator but used a flexible PCB rotor consisting of alternating polyamide and copper wedges. This prototype was assembled in a stacked configuration, with the intent of increasing current output. Results indicated that the internal resistance of the prototype was decreased, allowing for higher current output. However, degradation of the power output was observed, which led to decay testing of the prototypes. To overcome charge decay, a self-exciting design is suggested as further work.

42 ENGINEERING↗

Signature of Correlated Insulator in Electric Field Controlled Superlattice

On a two-dimensional crystal, a “superlattice” with nanometer-scale periodicity can be imposed to tune the Bloch electron spectrum, enabling novel physical properties inaccessible in the original crystal. While creating 2D superlattices by means of nanopatterned electric gates has been studied for band structure engineering in recent years, evidence of electron correlations-which drive many problems at the forefront of physics research-remains to be uncovered. Here, in this work, we demonstrate signatures of a correlated insulator phase in Bernal-stacked bilayer graphene modulated by a gate-defined superlattice potential, manifested as resistance peaks centered at integer multiples of single electron per superlattice unit cell carrier densities. The observation is consistent with the formation of a stack of flat low-energy bands due to the superlattice potential combined with inversion symmetry breaking. Our work paves the way to custom-designed superlattices for studying band structure engineering and strongly correlated electrons in 2D materials.

36 MATERIALS SCIENCE↗

Fabrication of pristine 2D heterostructures for scanning probe microscopy

Material-by-design has been a long-standing aspiration that has recently become a reality. Such designer materials have been repeatedly demonstrated using the top-down approach of mechanical exfoliation and stacking, leading to a variety of artificial 2D heterostructures with new properties that are otherwise unattainable. Consequently, tremendous research frontiers in physics, chemistry, engineering, and life science have been created. While thousands of layered crystals exist in nature, only a few dozen of them with manageable chemical-stability have been made into heterostructures using this method. Moreover, experimental investigations of materials that have received limited exploration in the 2D realm, such as cuprates, halides, and perovskites, along with their heterostructures, have been fundamentally hindered by their rapid chemical degradation. Another critical challenge imposed by exfoliating and stacking 2D layers in ambient environment is the absorption of itinerant gas molecules that further contaminate sensitive 2D interfaces in the heterostructures. Such contamination and compromised material properties significantly hinder surface-sensitive local probes—scanning probe microscopy (SPM)—that often require nanometer to atomic scale surface cleanliness. In this article, we aim to provide a technical review of recent development toward 2D materials and heterostructure fabrication in more controlled environments that are suitable for SPM characterizations. These include the development of more efficient mechanical exfoliation and dry-transfer techniques, as well as the incorporation of 2D material exfoliation and transfer in inert gas, low vacuum, and, eventually, ultra-high vacuum environments. Finally, we provide an outlook on the remaining challenges and opportunities in ultra-clean 2D material fabrication techniques.

Materials Science↗

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗

Unraveling the dislocation–precipitate interactions in high-entropy alloys

The precipitates play a significant role in not only enhancing the strength, but also maintaining the high toughness in alloys. However, the interactions of the nanoscale precipitates with dislocations in the high entropy alloys (HEAs) are difficult to observe directly by in-situ TEM experiments due to the limits of the resolution and time. Here, using atomic simulations we report the synergistic strengthening of the coherent precipitate and atomic-scale lattice distortion in the HEAs at cryogenic/elevated temperatures. The effects of temperature, chemical disorder, precipitate spacing, precipitate size, elemental segregation, and dislocation-cutting number on the critical stress for the dislocation to overcome a row of precipitates are studied. A random stacking fault energy landscape along the slip plane, the lattice distortion at different temperatures, and the interface/surface energy at various crystallographic orientations are obtained. Compared with the traditional metals and alloys, HEAs have the severe atomic-scale lattice distortions to generate the local high tensile/compressive stress fields. This complex stress causes the dislocation line to bend, and thus improves the dislocation slip resistance, resulting in the strong solid-solution strengthening. The stacking fault strengthening induced by the obvious difference of the stacking fault energies between the HEA matrix and precipitate (within the inner of the HEA matrix), and the formation of the antiphase domain boundary contribute to the high strength. The precipitate embedded by the solute atoms produces the strong lattice distortion to enhance the dislocation slip resistance at high temperatures. Hence, the current results provide the mechanistic insight into the phenomenon that the coherent precipitate combined with the severe atomic-scale lattice distortion can enhance the strength at cryogenic/elevated temperatures to further broaden the scope of applications of advanced HEAs.

36 MATERIALS SCIENCE↗

Multilayer Lateral Heterostructures of Van Der Waals Crystals with Sharp, Carrier–Transparent Interfaces

Abstract Research on engineered materials that integrate different 2D crystals has largely focused on two prototypical heterostructures: Vertical van der Waals stacks and lateral heterostructures of covalently stitched monolayers. Extending lateral integration to few layer or even multilayer van der Waals crystals could enable architectures that combine the superior light absorption and photonic properties of thicker crystals with close proximity to interfaces and efficient carrier separation within the layers, potentially benefiting applications such as photovoltaics. Here, the realization of multilayer heterstructures of the van der Waals semiconductors SnS and GeS with lateral interfaces spanning up to several hundred individual layers is demonstrated. Structural and chemical imaging identifies {110} interfaces that are perpendicular to the (001) layer plane and are laterally localized and sharp on a 10 nm scale across the entire thickness. Cathodoluminescence spectroscopy provides evidence for a facile transfer of electron‐hole pairs across the lateral interfaces, indicating covalent stitching with high electronic quality and a low density of recombination centers.

36 MATERIALS SCIENCE↗

Qualification of ANSI/HPS N13.1-2011 Mixing Criteria by Computational Fluid Dynamics Modeling for the 3430 Building Fan Addition and Increased Ventilation Capacity

Additional ventilation capacity has been designed for the 3430 Building filtered exhaust stack system. The updated system will increase the number of fans from two to three and include new ductwork with a larger diameter to integrate the new fan into the existing stack. Stack operations will involve running various fan combinations at any given time. The air monitoring system of the existing two-fan stack previously was found to comply with the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999 standard. Full-scale, three-dimensional computational fluid dynamics (CFD) modeling was used to evaluate the modified three-fan system for compliance with the ANSI/HPS N13.1-2011 standard, which essentially is equivalent to the ANSI/HPS N13.1-1999 standard. The four mixing criteria evaluated are 1) flow angle, 2) velocity, 3) gas tracer, and 4) particle tracer. Benchmarking of the CFD modeling methodology showed good agreement with previous testing used to qualify the stack, and modeling of the existing two-fan system showed good agreement with test data collected from the 3430 Building stack. Modeling was performed to develop a suitable three-fan design. Initial modeling of the three-fan design and basic ductwork showed that flow angles and velocity uniformity were acceptable; however, the gas tracer and particle tracer mixing results were not acceptable. To meet ANSI/HPS N13.1-2011 criteria, an air blender was added to the stack design.

42 ENGINEERING↗

Van der Waals heterostructures

The integration of dissimilar materials into heterostructures has become a powerful tool for engineering interfaces and electronic structure. The advent of two-dimensional (2D) materials brought unprecedented opportunities for novel heterostructures in the form of van der Waals stacks, laterally stitched 2D layers, and more complex layered and 3D architectures. This Primer provides an overview of state-of-the-art methodologies for producing such van der Waals heterostructures, focusing on the two fundamentally different strategies, top-down deterministic assembly and bottom-up synthesis. For both approaches, successful techniques, advantages, and limitations are discussed. As important as the fabrication itself is the characterization of the resulting engineered materials, for which a range of analysis techniques covering structure, composition, and emerging functionality are highlighted. Examples of the properties of artificial van der Waals structures include optoelectronics and plasmonics, twistronics, and unique functionality arising from the generalization of van der Waals assembly from 2D- to 3D-crystalline components. Lastly, current issues of reproducibility, limitations, and opportunities for future breakthroughs in terms of enhanced homogeneity, interfacial purity, feature control, and ultimately orders of magnitude increased complexity of van der Waals heterostructures are discussed.

36 MATERIALS SCIENCE↗

Transformational Solid Oxide Fuel Cell (SOFC) Technology

This project was conducted under the Co-operative Agreement No. DE-FE0027584 with the US Department Energy to developed advanced Solid Oxide Fuel Cell (SOFC) Technologies. The overall objective of this project was to advance SOFC technology at the cell and stack level to enhance cell robustness and durability, increase performance, and reduce balance-of-plant (BOP) requirements. By reducing system complexity combined with the increases in power density and efficiency, the ultimate goal of the project was to increased reliability and to reduce capital and operating costs of installed systems. The project was focused on pathways that will reduce the cost of the SOFC cell and stack, including the following areas: Robust, redox tolerant cell technology Lower cost cell manufacturing through advances in cell design, which will reduce the amount of material, energy and time used in the fabrication of SOFCs High performance, low temperature electrolyte based on improvement of established materials Innovative SOFC stack architecture which truly integrates Balance of Plant functionality into the stack level design Thermal management of the fuel cell stack for increased durability and expanded window of operation Novel stack design amenable for use in sub-MW to multi-MW-scale power plants and having low replacement cost The incorporation of balance-of-plant (BOP) equipment into the stack platform increased the economic viability of smaller scale systems. The project objectives were met by a multi-prong approach, including new cell design complemented with modifications to existing cell technology, as well as a new stack design incorporating components typically included in the BOP, such as heat exchangers, oxidizer, fuel reformers, and recycle systems. The project culminated with demonstration of a stack test validating the viability of the cell and stack improvements. A cost model was also developed to estimate costs for the advanced stack technology at high volume manufacturing levels. The net outcome of the project is SOFC cell and stack technology with costs significantly below current DOE targets without compromising and, in some cases, improving on the performance and degradation rate demonstrated with the current state-of-the-art stack design. The results of this project advanced the reliability, robustness, and endurance of low-cost SOFC technology that ultimately are ready to be deployed in coal power systems with greater than 60 percent efficiency (based on higher heating value of fuel) and the capability for ≥97% CO 2 capture at a cost-of-electricity that is approximately 40 percent below presently available Integrated Gasification Combined Cycle systems.

03 NATURAL GAS↗

Modulation of recombination zone position for white perovskite/organic emitter hybrid light-emitting devices

We report metal halide perovskites present specific challenges as emitters in large area, surface emission lighting devices. Among these challenges is the vast difference in carrier mobilities between the perovskite and many organic buffer layers typically used in such device fabrication as transport and blocking layers. This can make it difficult to engineer recombination to achieve white emitting devices generally. However, in this work, we introduce unique modulation of excitonic confinement within the perovskite layer of the device stack to control overall placement of the recombination zone. This results in a white light emitter that is bright and highly tunable, providing a path to realize white perovskite related light-emitting devices.

42 ENGINEERING↗

Investigation of the notch sensitivity of tailorable long fiber discontinuous prepreg composite laminates

Tailorable discontinuous fiber composite laminates provide relative formability beyond that of continuous fiber laminates, while achieving improved mechanical performance over comparable stochastic systems. Here, in this work, the notch sensitivity of engineered prepreg platelet molded composite (PPMC) laminates is investigated using the open-hole tension (OHT) test and compared to available data for stochastic PPMCs and continuous fiber laminates made with the same material. The press-formed thermoplastic composites (AS4/PEKK) were molded with a quasi-isotropic stacking sequence. The discontinuous PPMC laminate was found to be notch insensitive with OHT strengths ranging from 145.4 MPa (CV $=$ 7%) for d/w $=$ 0.5 to 229.3 MPa (CV $=$ 9%) for d/w $=$ 0.25. The highly ordered meso-structure of the engineered PPMC laminate yields comparatively excellent mechanical properties for relatively thin laminates in contrast to stochastic systems. Both net- and gross-section failures were observed for d/w $=$ 0.25, which suggests that the engineered PPMC laminates studied here maintain a degree of inherent, internal stress concentrations that compete with those caused by geometric features such as a circular hole. Computational simulations of the OHT tests with explicitly represented platelets were found to be in good agreement with experimental measurements. The progressive failure analysis was used to conduct a numerical investigation of the stacking sequence and platelet meso-morphology.

36 MATERIALS SCIENCE↗

Influence of side-chain isomerization on the isothermal crystallization kinetics of poly(3-alkylthiophenes)

Flexible alkyl side chain in conjugate polymers (CPs) improves the solubility and promotes solution processability, in addition, it affects interchain packing and charge mobilities. Despite the well-known charge mobility and morphology correlation for these semi-crystalline polymers, there is a lack of fundamental understanding of the impact of side chain on their crystallization kinetics. In the present work, isothermal crystallization of five poly(3-alkylthiophene-2,5-diyl) (P3ATs) with different side-chain structures were systematically investigated. To suppress the extremely fast crystallization and trap the sample into amorphous glass, an advanced fast scanning chip calorimetry technique, which is able to quench the sample with few to tens thousands of K/s, was applied. Results show that the crystallization of P3ATs was greatly inhibited after incorporation of branched side chains, as indicated by a dramatic up to six orders of magnitude decrease in the crystallization rate. The suppressed crystallization of P3ATs were correlated with an increased π–π stacking distance due to unfavorable side-chain steric interaction. This research provides a pathway to use side-chain engineering to control the crystallization behavior for CPs, thus to control device performance.

36 MATERIALS SCIENCE↗

Method of fabricating a three-dimensionally patterned mechanical energy absorptive material

A three-dimensionally patterned energy absorptive material and fabrication method having multiple layers of patterned filaments extrusion-formed from a curable pre-cursor material and stacked and cured in a three-dimensionally patterned architecture so that the energy absorptive material produced thereby has an engineered bulk property associated with the three-dimensionally patterned architecture.

Duoss, Eric B.↗

Topological d -wave superconductivity in two dimensions

Despite intensive searches for topological superconductors, the realization of topological superconductivity remains under debate. Previous proposals for the topological s-wave, p-wave, and chiral d-wave superconductivity have both advantages and disadvantages. In this review, we discuss two-dimensional topological superconductivity based on the non-chiral d-wave superconductors. It is shown that the noncentrosymmetric d-wave superconductors become topological superconductors under an infinitesimal Zeeman field without fine-tuning of parameters. Additionally, Floquet engineering for introducing the Zeeman field in a controllable way is also proposed. When the two-dimensional noncentrosymmetric superconductors are stacked to recover the global inversion symmetry, the field-induced parity transition may occur, and the high-field odd-parity superconducting state realizes various topological phases depending on the stacking structures. Two-dimensional heterostructures of strongly correlated electron systems, which have been developed by recent experiments, are proposed as a platform of the high-temperature topological superconductivity and the interplay of topology and strong correlations in superconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗