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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Silicon production process evaluations

Chemical engineering analysis of the HSC process (Hemlock Semiconductor Corporation) for producing silicon from dichlorosilane in a 1,000 MT/yr plant was continued. Progress and status for the chemical engineering analysis of the HSC process are reported for the primary process design engineering activities: base case conditions (85%), reaction chemistry (85%), process flow diagram (60%), material balance (60%), energy balance (30%), property data (30%), equipment design (20%) and major equipment list (10%). Engineering design of the initial distillation column (D-01, stripper column) in the process was initiated. The function of the distillation column is to remove volatile gases (such as hydrogen and nitrogen) which are dissolved in liquid chlorosilanes. Initial specifications and results for the distillation column design are reported including the variation of tray requirements (equilibrium stages) with reflux ratio for the distillation.

Source record↗
NASA NTRS1982

Silicon production process evaluations

Chemical engineering analysis was continued for the HSC process (Hemlock Semiconductor Corporation) in which solar cell silicon is produced in a 1,000 MT/yr plant. Progress and status are reported for the primary engineering activities involved in the preliminary process engineering design of the plant base case conditions (96%), reaction chemistry (96%), process flow diagram (85%), material balance (85%), energy balance (60%), property data (60%), equipment design (40%), major equipment list (30%) and labor requirements (10%). Engineering design of the second distillation column (D-02, TCS column) in the process was completed. The design is based on a 97% recovery of the light key (TCS, trichlorosilane) in the distillate and a 97% recovery of the heavy key (TET, silicon tetrachloride) in the bottoms. At a reflux ratio of 2, the specified recovery of TCS and TET is achieved with 20 trays (equilibrium stages, N=20). Respective feed tray locations are 9, 12 and 15 (NF sub 1 = 9, NF sub 2 = 12,, and NF sub 3 = 15). A total condenser is used for the distillation which is conducted at a pressure of 90 psia.

Source record↗
NASA NTRS2009

A Survey of Terrestrial Approaches to the Challenge of Lunar Dust Containment

Numerous technical challenges exist to successfully extend lunar surface exploration beyond the tantalizing first steps of Apollo. Among these is the challenge of lunar dust intrusion into the cabin environment. Addressing this challenge includes the design of barriers to intrusion as well as techniques for removing the dust from the cabin atmosphere. Opportunities exist for adapting approaches employed in dusty industrial operations and pristine manufacturing environments to cabin environmental quality maintenance applications. A survey of process technologies employed by the semiconductor, pharmaceutical, food processing, and mining industries offers insight into basic approaches that may be suitable for adaptation to lunar surface exploration applications.

Aguilera, Tatiana↗
NASA NTRS1999

Validity of the Relation Between Spontaneous and Stimulated Emissions in Semiconductors

The Einstein relation between spontaneous emission and absorption was originally derived for a system consists of a two-state subsystem representing matter and harmonic fields representing radiation. The derivation is based on the detailed balance between these two subsystems under thermal equilibrium. The relationship was later investigated in connection with the interactions between radiation field and solids or semiconductors. The simple derivation dose not hold for semiconductors in general. In certain limiting cases, simple relation was obtained. The validity of this relation is important not only because of its fundamental role connecting two of the most fundamental optical processes in semiconductors, but mostly also because of its wide use as a practical method to measure the optical gain of a semiconductor. The validity of this relation for semiconductors has been an issue of controversial for some time. In this paper we numerically examine the validity of this relationship for several different lineshapes including Lorentzian, Gaussian, Sech, and a convoluted double Lorentzians (CDL). We find out that at relatively low density above transparency level, all first three lineshapes violate the Einstein relation. The relation is approximately valid at high density. At very high density, the validity of the Einstein relation holds well for all three lineshapes. The reason behind this observation is explained. The CDL lineshape has been shown analytically to obey the Einstein relationship previously. We show that for a 2D semiconductor with parabolic bands, the CDL lineshape can be integrated analytically. This analytic lineshape is compared with a simple Lorentzian lineshape.

Ning, Cun-Zheng↗
NASA NTRS2018

Modification of Radiator Pigments by Atomic Layer Deposition (ALD)

The optical and physical properties of spacecraft radiator coatings are dictated by orbital environmental conditions. For example, coatings must adequately dissipate charge buildup when orbital conditions, such as polar, geostationary or gravity neutral, result in surface charging. Current dissipation techniques include depositing a layer of ITO (indium tin oxide) on the radiator surface in a high temperature process. Other examples include the application of variable emittance coatings such as the use of VO2 to optimize radiator size, allowing for a decrease in heater power budget. The application of these enhanced coatings must be such that the properties in question are tailored to mission-specific requirements. Modification of these coatings can be accomplished during coating application preprocessing by using a deposition technique prevalent in the semiconductor micro processing industry called Atomic Layer Deposition (ALD). The preprocessing is rendered directly on the coating dry pigment before binding. ALD is a cost effective nano-manufacturing technique that allows for the conformal coating of substrates with atomic-level thickness control in a benign temperature and pressure environment. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates ranging from glass, polymers, aerogels, metals, powders, and other high aspect-ratio micro- and nano-structures. By providing atomic-level control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels and pores is achievable. We have demonstrated a method for the ALD of In2O3 and ITO films on a variety of substrates from Si(100) wafers, glass slides, and on Z93P pigments (patent pending). The results indicate excellent growth of 4-22 nm thick films demonstrating an order of magnitude decrease in resistivity on the pigments.

ITO↗
NASA NTRS1995

Sub-ppb Oxygen Contaminant Detection in Semi-Conductor Processing

Gaseous contaminants such as oxygen, water vapor, nitrogen and hydrocarbons are often present in the processing environment in semiconductor device fabrication and in containerless materials processing. The contaminants arise as a result of outgassing from hot surfaces or they may be part of the impurities in commercial ultra-high purity gases. Among these gaseous contaminants, oxygen is the most reactive and, therefore, has the most adverse effects on the end product. There has been an intense effort at the Jet Propulsion Laboratory to develop different types of oxygen sorbents to reduce oxygen concentration in a microgravity processing environment to sub-ppb (parts-per-billion) levels. Higher concentrations can lead to rapid surface oxide formation, hence reducing the quality of semiconductor devices. If the concentration of oxygen in a processing chamber at 1000oC is in the ppb level, it will only take approximately 10 seconds for an oxide layer to form on the surface of a sample. The interaction of oxygen with the water surface can lead to the formation of localized defects in semi-conductor devices, hence decreasing the manufacturing yield. For example, efficient production of 64 Mb RAM chips requires contaminations below ppb levels. This paper describes a technique for measuring trace quantities of oxygen contaminants by recording the monoatomic negative ions, O-, using mass spectrometry. The O- formation from the e--O2 interaction utilizes the electron dissociative attachment method that is greatly enhanced at the resonant energy (6.8 eV). The device combines a small gridded electron ionizer with a compact mass spectrometer. The concentrations of oxygen have been measured using the method of standard additions by diluting O2 in N2. The lowest detection limit obtained was 1.2 kHz (O- count rate) at a concentration of 10-10, corresponding to 0.1 ppb.

Sub-ppb Contaminant↗
NASA NTRS1979

Thermally grown oxide and diffusions for automatic processing of integrated circuits

A totally automated facility for semiconductor oxidation and diffusion was developed using a state-of-the-art diffusion furnace and high temperature grown oxides. Major innovations include: (1) a process controller specifically for semiconductor processing; (2) an automatic loading system to accept wafers from an air track, insert them into a quartz carrier and then place the carrier on a paddle for insertion into the furnace; (3) automatic unloading of the wafers back onto the air track, and (4) boron diffusion using diborane with plus or minus 5 percent uniformity. Processes demonstrated include Wet and dry oxidation for general use and for gate oxide, boron diffusion, phosphorous diffusion, and sintering.

Kennedy, B. W.↗
NASA NTRS1997

Advances in Submillimeter Semiconductor-Based Device Designs and Processes

Planar submillimeter circuits are slowly replacing whisker-contacted devices at frequencies above 100 GHz, but in many cases the size constraints brought on by the short wavelengths associated with high frequency operation have not been adequeately addressed. Also, reproducibility becomes more important as we make the transition from tunable, whisker-based circuits to more monolithic designs. We are continuing to develop new circuites with more reproducible characteristics.

Submillimeter Semiconductor↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗
NASA NTRS1972

Economic analysis of crystal growth in space

Many advanced electronic technologies and devices for the 1980's are based on sophisticated compound single crystals, i.e. ceramic oxides and compound semiconductors. Space processing of these electronic crystals with maximum perfection, purity, and size is suggested. No ecomonic or technical justification was found for the growth of silicon single crystals for solid state electronic devices in space.

Ulrich, D. R.↗
NASA NTRS1979

CMOS circuit-fabrication handbook

Report describes complementary metal-oxide-semiconductor (CMOS) process used to fabricate integrated circuits at Marshall Space Flight Center. It also presents general discussions of circuit design, mask making packaging, and testing.

Bouldin, D. L.↗
NASA NTRS1982

Vacuum Head Removes Sanding Dust

Vacuum sander prevents sanding dust from entering a work area, since dust particles are drawn off as quickly as they are produced. Tool is useful where dust presents health hazards, interferes with such processes as semiconductor manufacture, or could destroy wet paint or varnish finishes. Could be used to sand such materials as lead paint.

Bengle, C. G.↗
NASA NTRS1979

Semiconductor technology program. Progress briefs

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Bullis, W. M.↗
NASA NTRS1980

Semiconductor technology program. Progress briefs

Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

Bullis, W. M.↗
NASA NTRS1981

Semiconductor technology program: Progress briefs

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Galloway, K. F.↗
NASA NTRS1985

Energy Stability of Thermocapillary Convection in Models of the Float Zone Process

The energy-stability of thermocapillary convection in models of the float-zone, crystal-growing process was studied. Stability limits, as functions of pertinent parameters, that will identify conditions which will not allow the existence of an undesirable oscillatory flow instability were determined. Such instabilities may occur in the space processing of semiconductor materials. The determination of the stability limits will involve two sets of numerical computations: (1) solution of the nonlinear governing equations together with the appropriate boundary conditions to determine the basic state (in general, velocity, pressure and temperature fields and the displacement of free surfaces and interfaces); and (2) solution of a nonlinear Euler-Lagrange systems for the energy-stability limit. Both computations, while difficult, should be within the scope of available computer capability and available concepts in numerical analysis. Finite-element methods are attractive candidates for the numerical work.

Neitzel, G. P.↗