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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Exploring the Adoption Challenges of Post-Quantum Cryptography in EV Charging Infrastructure

The rapid evolution of electric vehicle (EV) technology and the corresponding growth of the Electric Vehicle Charging Infrastructure (EVCI) brings to light significant cybersecurity concerns, notably in the context of emerging post-quantum computing capabilities. This report, prepared by Pacific Northwest National Laboratory (PNNL) under the U.S. Department of Energy contract, delves into the challenges associated with integrating Post-Quantum Cryptography (PQC) into EVCI to safeguard against potential quantum computing threats. Post-quantum computers will eventually be able to invalidate technologies secured through public key cryptography. As part of this effort, the primary gaps and challenges in the EVCI were investigated with a focus on comparing traditional algorithms against PQC algorithms. One of the notable findings was that the P-521 algorithm was frequently surpassed in performance by PQC algorithms. This document provides a thorough examination of the hurdles the industry can expect when transitioning to PQC within the EVCI, such as interoperability concerns, the computational and memory demands of PQC algorithms, and the organizational readiness for such a transition. It emphasizes the necessity of a forward-thinking approach to cybersecurity, advocating for early and strategic engagement among EVCI stakeholders to ensure a seamless and cost-effective migration to quantum-resistant cryptographic standards. Through this report, the authors aim to catalyze awareness and action among policymakers, industry leaders, and cybersecurity professionals towards fortifying the EVCI against emerging quantum threats, thereby securing the infrastructure essential for the future of electric mobility.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2024

Cycle equivalence classes, orthogonal Weingarten calculus, and the mean field theory of memristive systems

Abstract It has been recently noted that for a class of dynamical systems with explicit conservation laws represented via projector operators, the dynamics can be understood in terms of lower dimensional equations. This is the case, for instance, of memristive circuits. Memristive systems are important classes of devices with wide-ranging applications in electronic circuits, artificial neural networks, and memory storage. We show that such mean-field theories can emerge from averages over the group of orthogonal matrices, interpreted as cycle-preserving transformations applied to the projector operator describing Kirchhoff’s laws. Our results provide insights into the fundamental principles underlying the behavior of resistive and memristive circuits and highlight the importance of conservation laws for their mean-field theories. In addition, we argue that our results shed light on the nature of the critical avalanches observed in quasi-two-dimensional nanowires as boundary phenomena.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stacking-engineered ferroelectricity in bilayer boron nitride

Stacking a ferroelectric Properties of layered van der Waals structures can depend sensitively on the stacking arrangement of constituent layers. This phenomenon has been exploited to engineer superconducting, correlated insulator, and magnetic states. Two groups now show that ferroelectricity can also be engineered through stacking: Parallel-stacked bilayers of hexagonal boron nitride exhibit ferroelectric switching even though the bulk material is not ferroelectric (see the Perspective by Tsymbal). To explore these phenomena, Yasuda et al. used transport measurements, whereas Vizner Stern et al. focused on atomic force microscopy. Science , abd3230 and abe8177, this issue p. 1458 and p. 1462 ; see also abi7296, p. 1389

Science & Technology - Other Topics↗
DOE OSTI2022

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. In this report we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a two-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3% with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Emergent Quantum Magnetism and Cryogenic Spin-Memory in Twisted Bilayer Graphene

Recently developed techniques for assembling moiré heterostructures have enabled unprecedented control of the interlayer interactions within the heterostructure, allowing for the realization of strongly correlated electronic states. The experimentally realized states, to date, include a variety of topological states, superconductivity, and strange metal behavior. However, the phenomenology varies significantly from sample to sample. Here we will present microscopy techniques for further characterization of both the progenitor exfoliated materials and the composite moiré heterostructure. The application of these techniques has allowed for an unprecidented degree of characterization in ambient conditions. Additionally we will explore the use of resistively detected electron spin resonance (ESR) as a novel probe for spin order in moirés. While our results do not show clearly dispersive features that would unambiguously evince spin excitations within the sample, the technique is still promising.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗
DOE OSTI2024

Electrode Elastic Modulus as the Dominant Factor in the Capping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

The discovery of ferroelectricity in hafnia based thin films has catalyzed significant research focused on understanding the ferroelectric property origins and means to increase stability of the ferroelectric phase. Prior studies have revealed that biaxial tensile stress via an electrode “capping effect” is a suspected ferroelectric phase stabilization mechanism. This effect is commonly reported to stem from a coefficient of thermal expansion (CTE) incongruency between the hafnia and top electrode. Despite reported correlations between ferroelectric phase fraction and electrode CTE, the thick silicon substrate dominates the mechanics and CTE-related stresses, negating any dominant contribution from an electrode CTE mismatch toward the capping effect. In this work, these discrepancies are reconciled, and the origin of these differences deriving from electrode elastic modulus, not CTE, is demonstrated. Pt/M/TaN/Hf 0.5 Zr 0.5 O 2 /TaN/Si devices, where M is platinum, TaN, iridium, tungsten, and ruthenium, were fabricated. Sin 2 (ψ)-based X-ray diffraction measurements of biaxial stress in the HZO layer reveal a strong correlation between biaxial stress, remanent polarization, and electrode elastic modulus. Conversely, a low correlation exists between the electrode CTE, HZO biaxial stress, and remanent polarization. A higher elastic modulus enhances the resistance to electrode elastic deformation, which intensifies the capping effect during crystallization, and culminates in the tandem restriction of out-of-plane hafnia volume expansion and preferential orientation of the polar c-axis normal to the plane. These behaviors concomitantly increase the ferroelectric phase stability and polarization magnitude. This work provides electrode material selection guidelines toward the development of high-performing ferroelectric hafnia into microelectronic devices, such as nonvolatile memories.

36 MATERIALS SCIENCE↗
DOE OSTI2021

NRC Multiphysics Analysis Capability Deployment FY21: Part 3

This report details the progress and activities of Idaho National Laboratory (INL) on the Nuclear Regulatory Commission (NRC) project “Development and Modeling Support for Advanced Non-Light Water Reactors.” The deliverables completed for this report are: Deliverable 1c: the capability to model gas mixtures was added to Pronghorn. A test problem mimicking the conditions achieved in a depressurized loss of forced cooling (DLOFC) event was solved with both RELAP-5 and Pronghorn. Pronghorn employed a finite vol ume method with the Kurganov-Tadmor discretization. The comparison between the mass fraction spatial profiles computed with RELAP-5 and Pronghorn clearly shows the presence of numerical artifacts (i.e., overly diffusive behavior at low Mach numbers). We confirmed that the problem disappears at higher Mach numbers. We recommend future work on the implementation of a low Mach finite volume formulation to better treat low Mach number problems. Deliverable 2a: we demonstrated two approaches to model the radiation/conduction/natural convection heat transfer across a stagnant gas for the PBMR-400 design using Pronghorn. The first approach is based on the net radiation method, which relies on the computation of view factors with the Multiphysics Object-Oriented Simulation Environment (MOOSE) ray tracing capability. The second method is a traditional thermal resistance approach. The test problems include both 2D and 3D geometries. In all cases, the results show very good agreement during a DLOFC transient. This confirms that the faster thermal resistance method produces solutions that are equivalent to the net radiation method for this geometry. Deliverable 3d: we demonstrated the use of the advection kernel for the delayed neutron precursor equation in Griffin with a 2D MSFR model. The results appear physical but further verification is recommended. We also recommend the addition of conjugate heat transfer to compute the temperatures and model the thermomechanic behavior of the reflectors and other structures. Significant memory and performance issues were encountered in the 3D axisymmetric model. Future work is recommended in this area. Task 8g: this task allows multidimensional MOOSE applications to be coupled to system codes (RELAP-7 and SAM). We implemented a faster multiphysics iteration coupling algorithm, which provides an overall 6× acceleration of the 3D-1D coupling of the core multidi- mensional fluid flow solver and the 1D primary and secondary loop model.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2026

Heteroepitaxial control of thickness, strain, and domain architecture in few-layer ferroelectric tin monochalcogenides

Thin-film epitaxy and epitaxial strain have been widely exploited to tune domain configurations, switching behavior, and ferroic properties in conventional three-dimensional ferroelectric thin films; however, its application to controlling the properties of two-dimensional (2D) ferroelectrics has remained largely unexplored. Here, using SnX (X = Se, S) as a model system, we demonstrate heteroepitaxial control of thickness, strain state, and domain architecture in few-layer ferroelectric SnX via growth on monolayer MoS2 van der Waals (vdW) templates. Compared with conventional growth, MoS2-templated heteroepitaxy promotes epitaxial alignment, yielding ultrathin SnSe films with improved crystalline quality, full areal coverage, and enlarged lateral dimensions. Strong interfacial epitaxial coupling induces pronounced in-plane strain and stabilizes a hierarchical ferroelastic domain architecture, in which long-range 90° stripe domains are further subdivided into nanoscale rotational variants, as revealed by scanning transmission electron microscopy and synchrotron X-ray microscopy. Piezoresponse force microscopy and second-harmonic polarimetry confirm robust in-plane polarization, while ferroelectricity in SnSe is established through polarization-electric field hysteresis and nonvolatile ferroelectric resistive switching with on/off ratios approaching 1000. A nonvolatile, switchable ferroelectric diode effect further evidences direct coupling between polarization and charge transport. Notably, ferroelectric switchability exhibits a strong thickness dependence and is preserved only below ∼10 layers. This vdW heteroepitaxial strategy is further extended to ferroelectric SnS. The seamless heteroepitaxial integration of 2D ferroelectrics with CMOS-compatible, wafer-scale MoS2 templates provides a general and scalable route for strain-enabled structural and ferroelectric engineering in emerging memory and low-power optoelectronic applications.

Wang, Yueyin↗
DOE OSTI2024

Enhanced read resolution in reconfigurable memristive synapses for Spiking Neural Networks

Abstract The synapse is a key element circuit in any memristor-based neuromorphic computing system. A memristor is a two-terminal analog memory device. Memristive synapses suffer from various challenges including high voltage, SET or RESET failure, and READ margin issues that can degrade the distinguishability of stored weights. Enhancing READ resolution is very important to improving the reliability of memristive synapses. Usually, the READ resolution is very small for a memristive synapse with a 4-bit data precision. This work considers a step-by-step analysis to enhance the READ current resolution or the read current difference between two resistance levels for a current-controlled memristor-based synapse. An empirical model is used to characterize the $${\hbox {HfO}}_{2}$$ HfO 2 based memristive device. $$1\textrm{st}$$ 1 st and $$2\textrm{nd}$$ 2 nd stage device of our proposed synapse design can be scaled to enhance the READ current margin up to $$\sim$$ ∼ 4.3 $$\times$$ × and $$\sim$$ ∼ 21%, respectively. Moreover, READ current resolution can be enhanced with run-time adaptation techniques such as READ voltage scaling and body biasing. The READ voltage scaling and body biasing can improve the READ current resolution by about 46% and 15%, respectively. TENNLab’s neuromorphic computing framework is leveraged to evaluate the effect of READ current resolution on classification, control, and reservoir computing applications. Higher READ current resolution shows better accuracy than lower resolution even when facing different levels of read noise.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗
DOE OSTI2020

Unconventional ferroelectricity in moiré heterostructures

Although all matter is composed of component particles, these particles can arrange themselves in various ways, giving rise to emergent phenomena that can be surprisingly rich and often cannot be understood by studying only the individual constituents. Discovering and understanding novel forms of emergence in quantum materials, especially in those where multiple degrees of freedom or energy scales are delicately balanced, is of great fundamental interest to condensed matter research. In this work, we report on the surprising observation of emergent ferroelectricity in graphene-based moiré heterostructures. Ferroelectric materials exhibit an electrically-switchable electric dipole, which is usually formed by spatial separation between the averaged centers of positive and negative charge within the unit cell. Based on this, it is difficult to imagine graphene, a material composed only of carbon atoms, exhibiting ferroelectricity. However, in this work, we indeed realize switchable ferroelectricity in Bernal-stacked bilayer graphene sandwiched between two hexagonal boron nitride (BN) layers. By introducing a moiré superlattice potential (via aligning bilayer graphene with the top and/or bottom BN crystals), we observe prominent and robust hysteretic behavior of the graphene resistance with an externally applied out-of-plane displacement field. Our systematic transport measurements reveal rich and striking response as a function of displacement field and electron filling, not previously observed in any 2D systems, and beyond the framework of conventional ferroelectrics. We further directly probe the ferroelectric polarization through a nonlocal monolayer graphene sensor. Our results suggest an unconventional, odd parity electronic ordering in the bilayer graphene/BN moiré system. This emergent moiré ferroelectricity may pave the way for ultrafast, programmable, and atomically thin carbon-based memory devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

The phylogenetic roots of addiction: compulsive drug seeking, natural and drug-sensitive reward, and the acquisition of learned habits

Our rational faculties permit us humans to maximize the utility of our actions. We perform a fundamental type of cost-benefit analysis in which we frame a problem, assign values to the different paths, and then choose from among a set of available options, the course that promises the most favorable outcome. So why then does addiction appear to be so impervious to the associated costs, so unaffected by undesired consequences, and ultimately so resistant to cognitive oversight? The answer may likely be found in the fact that the drivers for compulsive drug seeking and drug taking are located in affective brain circuits, circuits that are structured and patterned by learning with repeated activation. These deep processes exhibit significant resistance to control by our cognitive faculties. The general consensus is that addiction arises from mechanisms that overvalue the magnitude of reward, discount the associated risks, and thereby bias individuals towards compulsive pursuit of addictive drugs. Behavioral disruption and dependence appear to arise at the intersection of a number of connected but separate phenomena: expectations for the occurrence of specific events, behaviors that seek encounters with them, the ability to notice and learn nonrandom, co-occurring conditions, the prediction and valuation of consequences, the forming of enduring memories, and the drivers of focused behavior through compulsion, habits, and acquired routines. It is important to recognize that each one of these individual faculties are present and well developed across the entire phylogenetic tree of bilateral metazoans. The goal of this special volume is dedicated to exploring the degree to which inherent elements can account for addiction and addiction-associated phenomena. In much of the literature on addiction, the underlying processes are often viewed as distinctly mammalian, arising, in part, from the strong cognitive capacities of this taxon. Some phenomena may even be regarded to exist only in primates, or even solely in humans. This supposition arises from the fact that studies are conducted almost exclusively in mammals and primates, while evolutionary antecedents of the behavior are rarely considered. A more comprehensive perspective that examines drug reward and reinforcement in a wider range of organisms demonstrates that many of the component traits are actually well developed across the greater metazoan lineage, and they may well predate the emergence of a mammalian clade by a wide margin. The collection of papers assembled here supports the notion that the capacity to associate cues and quences has not arisen in mammals de novo. Rather, the neural mechanisms for detecting contingencies and for predicting future outcomes are very deeply rooted across broad phylogenetic divisions. Our understanding of an ability to associate paired events has been enriched by work in invertebrate preparations in both classical and operant conditioning scenarios [Cook and Carew, 1986, 1989a, 1989b]. The ability to learn allows us to connect cues and behavioral actions to their associated consequences. Pavlovian conditioning enriches surrounding cues with predictive value. Outcomes with positive valence generate appetitive responses and approach to the associated cues, while those perceived as aversive bring cue avoidance and withdrawal. Humans are not the only life forms capable of such short- and long-term modulations of behavior

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

StressNet - Deep learning to predict stress with fracture propagation in brittle materials

Abstract Catastrophic failure in brittle materials is often due to the rapid growth and coalescence of cracks aided by high internal stresses. Hence, accurate prediction of maximum internal stress is critical to predicting time to failure and improving the fracture resistance and reliability of materials. Existing high-fidelity methods, such as the Finite-Discrete Element Model (FDEM), are limited by their high computational cost. Therefore, to reduce computational cost while preserving accuracy, a deep learning model, StressNet, is proposed to predict the entire sequence of maximum internal stress based on fracture propagation and the initial stress data. More specifically, the Temporal Independent Convolutional Neural Network (TI-CNN) is designed to capture the spatial features of fractures like fracture path and spall regions, and the Bidirectional Long Short-term Memory (Bi-LSTM) Network is adapted to capture the temporal features. By fusing these features, the evolution in time of the maximum internal stress can be accurately predicted. Moreover, an adaptive loss function is designed by dynamically integrating the Mean Squared Error (MSE) and the Mean Absolute Percentage Error (MAPE), to reflect the fluctuations in maximum internal stress. After training, the proposed model is able to compute accurate multi-step predictions of maximum internal stress in approximately 20 seconds, as compared to the FDEM run time of 4 h, with an average MAPE of 2% relative to test data.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Successful cognitive aging is associated with thicker anterior cingulate cortex and lower tau deposition compared to typical aging

INTRODUCTION There is no consensus on either the definition of successful cognitive aging (SA) or the underlying neural mechanisms. METHODS We examined the agreement between new and existing definitions using: (1) a novel measure, the cognitive age gap (SA-CAG, cognitive-predicted age minus chronological age), (2) composite scores for episodic memory (SA-EM), (3) non-memory cognition (SA-NM), and (4) the California Verbal Learning Test (SA-CVLT). RESULTS Fair to moderate strength of agreement was found between the four definitions. Most SA groups showed greater cortical thickness compared to typical aging (TA), especially in the anterior cingulate and midcingulate cortices and medial temporal lobes. Greater hippocampal volume was found in all SA groups except SA-NM. Lower entorhinal 18 F-Flortaucipir (FTP) uptake was found in all SA groups. DISCUSSION These findings suggest that a feature of SA, regardless of its exact definition, is resistance to tau pathology and preserved cortical integrity, especially in the anterior cingulate and midcingulate cortices. Highlights: Different approaches have been used to define successful cognitive aging (SA). Regardless of definition, different SA groups have similar brain features. SA individuals have greater anterior cingulate thickness and hippocampal volume. Lower entorhinal tau deposition, but not amyloid beta is related to SA. A combination of cortical integrity and resistance to tau may be features of SA.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

Defect-induced formation and frustration-driven multiple magnetic transitions in Gd 2 Co 0.90 Si 2.90

A new ternary compound, Gd 2 Co 0.90 Si 2.90 , has been synthesized in a chemically single phase by deliberately introducing lattice vacancies in the Co and Si sites. The system is characterized by DC magnetization, heat capacity, resistivity and density functional theory (DFT) calculations. Here, a detailed experimental study reveals that the system exhibits an antiferromagnetic transition below T N = 11.3 K followed by spin freezing behaviour below T B ~ 4.8 K. An additional high-temperature magnetic transition could also be detected at T H ~ 150 K, which is short range in character and is associated with defect-induced polarization of the conduction electrons. The spin-glass-like state formation in the system is additionally bolstered by the observation of magnetic relaxation and associated aging phenomena as well as the magnetic memory effect. On the basis of non-equilibrium dynamical behaviour, we argue that the glassy state in this compound favours the hierarchical model over the droplet model. DFT calculations and experimental outcomes establish that the ground state is magnetically frustrated due to the small energy difference between distinct spin configurations having closely spaced ground-state energies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗