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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Silicon carbide semiconductor device fabrication and characterization

A number of basic building blocks i.e., rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films were fabricated and characterized. Gold forms a rectifying contact on beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it was possible to utilize Au contact diodes for electrically characterizing SiC films. Preliminary work indicates that sputtered Pt or Pt/Si contacts on beta SiC films are someways superior to Au contacts. Sputtered Pt layers on alpha SiC films form excellent rectifying contacts, whereas Ni layers following anneal at approximately 1050 C provide an ohmic contact. It has demonstrated that ion implantation of Al in substrates held at 550 C can be successfully employed for the fabrication of rectifying junction diodes. Feasibility of fabricating pnpn diodes and platinum gated MESFETs on alpha SiC films was also demonstrated.

Davis, R. F.↗
NASA NTRS2001

NASA Ames Research Center 60 MW Power Supply Modernization

The NASA Ames Research Center 60 MW DC Power Supply was built in 1974 to provide controlled DC power for the Thermophysics Facility Arc Jet Laboratory. The Power Supply has gradually losing reliability due to outdated technology and component life limitation. NASA has decided to upgrade the existing rectifier modules with contemporary high-power electronics and control equipment. NASA plans to complete this project in 2001. This project includes a complete replacement of obsolete thyristor stacks in all six rectifier modules and rectifier bridge control system. High power water-cooled thyristors and freewheeling diodes will be used. The rating of each of the six modules will be 4000 A at 5500 V. The control firing angle signal will be sent from the Facility Control System to six modules via fiberoptic cable. The Power Supply control and monitoring system will include a Master PLC in the Facility building and a Slave PLC in each rectifier module. This system will also monitor each thyristor level in each stack and the auxiliary equipment.

Choy, Yuen Ching↗
DOE OSTI2020

Harmonics and Stability Evaluation of Converter-Interfaced Combined Heat and Power Units

Grid integration of medium-sized combined heat and power (CHP) units is challenging due to strict grid codes and conventional generators lack of control flexibility to meet these grid codes. Adding a two-stage ac-dc-ac power electronics interface between the generator and the utility grid will accelerate the interconnection process of CHP units. For the dc-ac stage, a voltage source converter (VSC) has been widely used as a grid-tied inverter because of its fast control and low total harmonics distortion (THD). In this paper, several topologies of generator-side rectifiers for ac-dc power conversion are explored and analyzed. The harmonics impact of various rectifiers on the CHP generator are evaluated. The overall cost of the electrical system, when using various types of rectifiers, is assessed and the VSC back-to-back converter interface configuration is found to be optimal. The overall system stability is also examined using small-signal impedance analysis to assess potential instability issues at the system level.

CHP, Harmonics, Generator Rectifier Unit, DC Imped↗
DOE OSTI2025

Erosion of high-Z refractory coatings for helicon plasma source window

Proto-MPEX (Materials Plasma Exposure eXperiment), a linear plasma device (LPD), using a high power radio frequency (RF) (⩾100 kW, 13.56 MHz) helicon plasma source, has suffered RF sheath-induced window erosion. The sputtered impurities from the window surface transport toward the downstream target affecting plasma-material interaction studies. The rectified sheath voltage formed was high enough to cause window erosion by light ions due to its low-Z components (e.g. Si 3 N 4 and AlN). Hence, we are proposing impurity mitigation strategies, which involve the application of a Faraday screen to lower the rectified sheath voltage and the application of high-Z refractory coatings on the existing window plasma-facing surface. In this work, we report the erosion of two different coatings, i.e., tantalum oxide (Ta 2 O 5 ) and hafnium oxide (HfO 2 ) on a silicon nitride (Si 3 N 4 ) window material under conditions of low-energy deuterium (D) ion impact, well below the Ta 2 O 5 sputtering energy threshold (i.e. 250 eV). The test samples were RF-biased and exposed to a high D-ion fluence (∼10 26 m −2 ) in Plasma Interaction with Surface Component Experimental Station (PISCES-A) LPD. The experimentally measured sputtering yields of the high-Z refractory coatings below the sputtering energy threshold of Ta 2 O 5 indicate an increased erosion due to the plasma impurities, especially due to oxygen. Improving the vacuum level could reduce the oxygen impurities and increase the lifespan of the coated helicon window for plasma operation. Post-surface analysis indicates no preferential erosion of oxygen or enrichment of the high-Z surface component. This is likely due to an effective energy transfer from the impurity ion for sputtering of the high-Z component in the coating. With the reduced rectified sheath voltage at the window surface and improved vacuum conditions, the proposed high-Z refractory coatings offer a promising solution for reducing window erosion in future MPEX plasma operations at ORNL.

RF bias↗
DOE OSTI2024

Radiofrequency sheath rectification on WEST: application of the sheath-equivalent dielectric layer technique in tokamak geometry *

Radiofrequency sheath rectification is a phenomenon relevant to the operation of Ion Cyclotron Range of Frequencies (ICRFs) actuators in tokamaks. Techniques to model the sheath rectification on 3D ICRF antenna geometries have only recently become available (Shiraiw et al 2023 Nucl. Fusion 63 026024; Beers et al 2021 Phys. Plasmas 28 093503). In this work, we apply the 'sheath-equivalent dielectric layer' technique, used previously only on linear devices (Beers et al 2021 Phys. Plasmas 28 103508), in tokamak geometry, computing rectified sheath potentials on the WEST ICRF antenna. Advancing the state of the art in sheath rectification modeling, we compute the sheath potentials not just on the limiters, but also on the Faraday Screen bars. The calculations show a peak rectified DC potential of 300 V on the limiters and 500 V on the Faraday screen. Assuming a typical sputtering yield curve, the RF sheath rectification increases the sputtering yield from the limiters by a factor of 2.6 w.r.t. the sputtering due to the non-rectified thermal sheath.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Direct Power Control of Back to Back Modular Multilevel Converter with Advanced Grid Support Functions for Grid Forming Application

Possibility of using back-to-back modular multilevel converter system with a direct power control architecture has been investigated in this paper. The rectifier side is controlled to be in grid following mode whereas the inverter side is controlled in grid forming mode. Both the sides’ local controllers use Lyapunov energy function based architecture to accomplish the objective of active and reactive power control as well as maintaining a fixed user defined voltage over the dc bus on the rectifier side. Therefore, the proposed direct power control architecture has embedded dc bus control architecture to maintain fixed user defined value of the capacitors. Similar architecture is implemented on the inverter side to accomplish either voltage control during grid forming or power control during grid following. Advanced grid support functionalities based on IEEE-1547-2018 is implemented and utilized to generate the reference values for either the rectifier or the inverter sides. The overall system is modeled based on MATLAB/Simulink and PLECS domain and various important case studies to verify the efficacy of the overall system has been presented.

direct power control (DPC)↗
DOE OSTI2025

Intercell Power Transformer for Power Balancing of Polyphase Wireless Power Transfer Systems

Polyphase wireless power transfer (PWPT) systems experience receiver side imbalances in misaligned conditions. This paper proposes a method for power balancing in PWPT systems, specifically addressing the challenges caused by receivers coil unequal coupling. An intercell power transformer (IPT) is introduced at the receiver side to mitigate the effects of coil mismatch. Simulations of the PWPT system incorporating IPT demonstrate its effectiveness in enhancing power distribution. For voltage-fed rectifiers (VFR), the IPT increases the conduction angle, resulting in higher output power. In current- fed rectifiers (CFR), the IPT promotes uniform power sharing among rectifiers, thereby reducing electrical stress on semiconductor devices and passive components. Simulation results indicate that, under coil misalignment, the IPT improves output power by approximately 49% for VFRs and 44% for CFRs compared to conventional PWPT systems without IPT.

Wojda, Rafal [ORNL] (ORCID:0000000286609268)↗
NASA NTRS1971

Efficiency/reliability design requirements at low output voltage levels.

Higher efficiency and reliability are needed in the rectification used to produce low output voltages. To this end, the application of driven synchronous rectifier circuits is investigated. One reliability problem of such circuits, the ?double-on' resulting from storage time, is illustrated for low output voltages obtained from rectification of the square-wave outputs of low input voltage converters. A comparison of the rectification efficiency and reliability of driven transistor synchronous rectifiers with that of barrier diodes indicates that the choice of rectifiers in low output voltage applications is dependent on both the source and output voltage levels of the application.

Pasciutti, E. R.↗
NASA NTRS1974

LC-oscillator with automatic stabilized amplitude via bias current control

A stable excitation supply for measurement transducers is described. It consists of a single-transistor oscillator with a coil connected to the collector and a capacitor connected from the collector to the emitter. The output of the oscillator is rectified and the rectified signal acts as one input to a differential amplifier; the other input being a reference potential. The output of the amplifier is connected at a point between the emitter of the transistor and ground. When the rectified signal is greater than the reference signal, the differential amplifier produces a signal of polarity to reduce bias current and, consequently, amplification.

Hamlet, J. F.↗
NASA NTRS1975

Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts.

Cordes, L. F.↗
NASA NTRS1981

Power converter

A dc-to-dc converter employs four transistor switches in a bridge to chop dc power from a source, and a voltage multiplying diode rectifying ladder network to rectify and filter the chopped dc power for delivery to a load. The bridge switches are cross coupled in order for diagonally opposite pairs to turn on and off together using RC networks for the cross coupling to achieve the mode of operation of a free running multivibrator, and the diode rectifying ladder is configured to operate in a push-pull mode driven from opposite sides of the multivibrator outputs of the ridge switches. The four transistor switches provide a square-wave output voltage which as a peak-to-peak amplitude that is twice the input dc voltage, and is thus useful as a dc-to-ac inverter.

Black, J. M.↗
NASA NTRS1988

Dependence of image grey values on topography in SIR-B images

This paper focuses on the use of a high resolution digital elevation model (DEM) to aid in rectifying and enhancing synthetic aperture radar images. Using a synthetic backscatter image, the SIR-B images are manually rectified and resampled to remove geometric distortions caused by topography. In a second step, an improved reflectance function of incidence angle is derived from the DEM and the rectified image and this function is used to reduce radiometric effects of topography yielding an albedo image which clearly shows the thematic, as opposed to topographic content of the image. The procedure is tested on four SIR-B images of a scene in Argentina (crossover point) that is imaged under different azimuth and incidence angles. The similarity of the resulting images indicates that the procedure effectively reduces artefacts from the images that are dependent on topography.

Domik, G.↗
NASA NTRS1996

Study of a High Voltage Ion Engine Power Supply

A complete laboratory breadboard version of a ion engine power converter was built and tested. This prototype operated on a line voltage of 80-120 Vdc, and provided output ratings of 1100 V at 1.8 kW, and 250 V at 20 mA. The high-voltage (HV) output voltage rating was revised from the original value of 1350 V at the beginning of the project. The LV output was designed to hold up during a 1-A surge current lasting up to 1 second. The prototype power converter included a internal housekeeping power supply which also operated from the line input. The power consumed in housekeeping was included in the overall energy budget presented for the ion engine converter. HV and LV output voltage setpoints were commanded through potentiometers. The HV converter itself reached its highest power efficiency of slightly over 93% at low line and maximum output. This would dip below 90% at high line. The no-load (rated output voltages, zero load current) power consumption of the entire system was less than 13 W. A careful loss breakdown shows that converter losses are predominately Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) conduction losses and HV rectifier snubbing losses, with the rectifier snubbing losses becoming predominant at high line. This suggests that further improvements in power efficiency could best be obtained by either developing a rectifier that was adequately protected against voltage overshoot with less snubbing, or by developing a pre-regulator to reduced the range of line voltage on the converter. The transient testing showed the converter to be fully protected against load faults, including a direct short-circuit from the HV output to the LV output terminals. Two currents sensors were used: one to directly detect any core ratcheting on the output transformer and re-initiate a soft start, and the other to directly detect a load fault and quickly shut down the converter for load protection. The finished converter has been extensively fault tested without failure. The finished converter has been packaged suitable for use as a laboratory prototype for further testing. The finished converter is readily transportable. An article on design issues for high voltage converters for ion engines is included as an attachement.

Stuart, Thomas A.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (< 250 V) 4H-SiC p(sup +)n Junction Diodes--Part II: Dynamic Breakdown Properties: Dynamic Breakdown Properties - Part 2

This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5 x 10(exp -4) sq cm 4H-SiC p(sup +)n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 microseconds. 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, IGBT's, etc.) remains to be investigated.

Neudeck, Philip G.↗
NASA NTRS1983

Unity power factor switching regulator

A single or multiphase boost chopper regulator operating with unity power factor, for use such as to charge a battery is comprised of a power section for converting single or multiphase line energy into recharge energy including a rectifier (10), one inductor (L.sub.1) and one chopper (Q.sub.1) for each chopper phase for presenting a load (battery) with a current output, and duty cycle control means (16) for each chopper to control the average inductor current over each period of the chopper, and a sensing and control section including means (20) for sensing at least one load parameter, means (22) for producing a current command signal as a function of said parameter, means (26) for producing a feedback signal as a function of said current command signal and the average rectifier voltage output over each period of the chopper, means (28) for sensing current through said inductor, means (18) for comparing said feedback signal with said sensed current to produce, in response to a difference, a control signal applied to the duty cycle control means, whereby the average inductor current is proportionate to the average rectifier voltage output over each period of the chopper, and instantaneous line current is thereby maintained proportionate to the instantaneous line voltage, thus achieving a unity power factor. The boost chopper is comprised of a plurality of converters connected in parallel and operated in staggered phase. For optimal harmonic suppression, the duty cycles of the switching converters are evenly spaced, and by negative coupling between pairs 180.degree. out-of-phase, peak currents through the switches can be reduced while reducing the inductor size and mass.

Rippel, Wally E.↗
NASA NTRS2009

Monitoring Disasters by Use of Instrumented Robotic Aircraft

Efforts are under way to develop data-acquisition, data-processing, and data-communication systems for monitoring disasters over large geographic areas by use of uninhabited aerial systems (UAS) robotic aircraft that are typically piloted by remote control. As integral parts of advanced, comprehensive disaster- management programs, these systems would provide (1) real-time data that would be used to coordinate responses to current disasters and (2) recorded data that would be used to model disasters for the purpose of mitigating the effects of future disasters and planning responses to them. The basic idea is to equip UAS with sensors (e.g., conventional video cameras and/or multispectral imaging instruments) and to fly them over disaster areas, where they could transmit data by radio to command centers. Transmission could occur along direct line-of-sight paths and/or along over-the-horizon paths by relay via spacecraft in orbit around the Earth. The initial focus is on demonstrating systems for monitoring wildfires; other disasters to which these developments are expected to be applicable include floods, hurricanes, tornadoes, earthquakes, volcanic eruptions, leaks of toxic chemicals, and military attacks. The figure depicts a typical system for monitoring a wildfire. In this case, instruments aboard a UAS would generate calibrated thermal-infrared digital image data of terrain affected by a wildfire. The data would be sent by radio via satellite to a data-archive server and image-processing computers. In the image-processing computers, the data would be rapidly geo-rectified for processing by one or more of a large variety of geographic-information- system (GIS) and/or image-analysis software packages. After processing by this software, the data would be both stored in the archive and distributed through standard Internet connections to a disaster-mitigation center, an investigator, and/or command center at the scene of the fire. Ground assets (in this case, firefighters and/or firefighting equipment) would also be monitored in real time by use of Global Positioning System (GPS) units and radio communication links between the assets and the UAS. In this scenario, the UAS would serve as a data-relay station in the sky, sending packets of information concerning the locations of assets to the image-processing computer, wherein this information would be incorporated into the geo-rectified images and maps. Hence, the images and maps would enable command-center personnel to monitor locations of assets in real time and in relation to locations affected by the disaster. Optionally, in case of a disaster that disrupted communications, the UAS could be used as an airborne communication relay station to partly restore communications to the affected area. A prototype of a system of this type was demonstrated in a project denoted the First Response Experiment (Project FiRE). In this project, a controlled outdoor fire was observed by use of a thermal multispectral scanning imager on a UAS that delivered image data to a ground station via a satellite uplink/ downlink telemetry system. At the ground station, the image data were geo-rectified in nearly real time for distribution via the Internet to firefighting managers. Project FiRE was deemed a success in demonstrating several advances essential to the eventual success of the continuing development effort.

Wegener, Steven S.↗
NASA NTRS2011

Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

The majority of solid tantalum capacitors are produced by high-temperature sintering of a fine tantalum powder around a tantalum wire followed by electrolytic anodization that forms a thin amorphous Ta2O5 dielectric layer and pyrolysis of manganese nitrite on the oxide to create a conductive manganese dioxide electrode. A contact to tantalum wire is used as anode terminal and to the manganese layer as a cathode terminal of the device. This process results in formation of an asymmetric Ta -- Ta2O5 -- MnO2 capacitor that has different characteristics at forward (positive bias applied to tantalum) and reverse (positive bias applied to manganese cathode) voltages. Reverse bias currents might be several orders of magnitude larger than forward leakage currents so I-V characteristics of tantalum capacitors resemble characteristics of semiconductor rectifiers. Asymmetric I-V characteristics of Ta -- anodic Ta2O5 systems have been observed at different top electrode materials including metals, electrolytes, conductive polymers, and manganese oxide thus indicating that this phenomenon is likely related to the specifics of the Ta -- Ta2O5 interface. There have been multiple attempts to explain rectifying characteristics of capacitors employing anodic tantalum pentoxide dielectrics. A brief review of works related to reverse bias (RB) behavior of tantalum capacitors shows that the mechanism of conduction in Ta -- Ta2O5 systems is still not clear and more testing and analysis is necessary to understand the processes involved. If tantalum capacitors behave just as rectifiers, then the assessment of the safe reverse bias operating conditions would be a relatively simple task. Unfortunately, these parts can degrade with time under reverse bias significantly, and this further complicates analysis of the I-V characteristics and establishing safe operating areas of the parts. On other hand, time dependence of reverse currents might provide additional information for investigation of the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

Teverovsky, Alexander A.↗
DOE OSTI2022

Power management for wireless nodes

A system includes a rectifier having an input configured to receive a variable AC input voltage and convert the AC input voltage to a rectified output voltage. A power converter has an input coupled to receive the rectified output voltage and to provide a DC supply voltage at an output thereof. A low drop-out regulator has an input coupled to receive the supply voltage and is configured provide a regulated voltage. A sensor is coupled to receive the regulated voltage as a power source and is configured to sense a condition and provide sensor data indicative of the sensed condition.

Feng, Philip X. L.↗