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At least 127 records · Page 7

Body of Knowledge for Silicon Carbide Power Electronics

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Silicon Carbide Power Electronics↗

Cybersecurity Challenges in Low-Inertia Power-Electronics-Dominated Grids

Here, the low inertia characteristics of the power electronics dominated grid (PEDG) introduces challenges while restoring voltage and frequency to their nominal values. These stability challenges create new cybersecurity vulnerabilities that are not thoroughly discussed in the literature. Cyber events such as false data injection (FDI), denial of service (DoS), man-in-the-middle attacks, stealthy attacks, and advanced persistent threats target PEDG to disrupt grid stability or gain financial benefits. The low inertia of PEDG (< 2s) compared to traditional grids (~10s) exacerbates these vulnerabilities. In response to stealthy attacks on state variables that supervisory layers cannot detect until significant harm occurs, the low inertia characteristics of PEDG offer substantial stealthy attack surfaces. To counteract such threats, PEDG must be equipped with ultra-fast real-time anomaly detection system and trajectory prediction mechanism to achieve effective cyberattack resiliency.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Thermal and Mechanical Design of a High-Voltage Power Electronics Package: Preprint

Thermal and mechanical design aspects of a power electronic package with 5-kV GaN devices are presented. Through finite element analyses, the impact of different cooling configurations and device location on the thermal performance and reliability of the package was investigated. It was found that placing the devices closer to the direct-bond-copper substrate as opposed to a centered approach in the proposed double-sided-cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

27 ARPA - Advanced Research Projects Agency-Energy↗

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗

The 5-kW arcjet power electronics

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Gruber, R. P.↗

5-kW arcjet power electronics

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Gruber, R. P.↗

Advanced Power Electronics Designs - Reliability and Prognostics (Keystone Project 1)

The primary deliverable for this project will be to construct a power electronics package utilizing an organic electrically insulating substrate material with a direct chip-to-chip interconnect technology and demonstrate superior thermal performance and greater reliability under thermal cycling, thermal aging, vibration, power cycling, and electrical high-potential evaluation over traditional packages.

47 OTHER INSTRUMENTATION↗

Advanced Power Electronics Designs - Reliability and Prognostics (Keystone Project 1)

The primary deliverable for this project will be to construct a power electronics package utilizing an organic electrically insulating substrate material with a direct chip-to-chip interconnect technology and demonstrate superior thermal performance and greater reliability under thermal cycling, thermal aging, vibration, power cycling, and electrical high-potential evaluation over traditional packages.

ADVANCED PROPULSION SYSTEMS↗

Advanced Power Electronics Designs - Reliability and Prognostics (Keystone Project 1)

The primary deliverable for this project will be to construct a power electronics package utilizing an organic electrically insulating substrate material with a direct chip-to-chip interconnect technology and demonstrate superior thermal performance and greater reliability under thermal cycling, thermal aging, vibration, power cycling, and electrical high-potential evaluation over traditional packages.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗

Intrusion Detection for Cybersecurity of Power Electronics Dominated Grids: Inverters PQ Set-Points Manipulation

This work provides cybersecurity analytics for a high photovoltaic (PV) penetrated distribution network, representing future power electronics dominated grid (PEDG). Firstly, the impact of active and reactive power (PQ) set-points manipulation on the network is studied. Then, an intrusion detection system (IDS) is developed for identifying the potentially compromised PV inverters in the network. The proposed IDS is based on defining the normal, safe, and abnormal operation regions of the PV inverters from point of view of the steady state voltage stability of the network. These three-operation regions are identified by utilizing active power, reactive power, and voltage (PQV) limits of each specific grid-following inverter in the network. Each grid-following inverter's PQV contour includes the information of network topology, inverter ratings, and inverter controller. The developed PQ limits are integrated into the centralized secondary control layer for realization of the proposed IDS. Furthermore, the proposed secondary control layer is capable of providing remedial actions during an anomaly event to enhance the grid resiliency. The theoretical analyses are verified by several attack scenarios for a network of grid-following inverters.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Body of Knowledge for Gallium Nitride Power Electronics

Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.

Gallium Nitride Power Electronics↗

Thermomechanical Reliability Aspects of Automotive Power Electronics: Current Status and Future Trends

Common failure locations (e.g., wire bonds, solder interface) and mechanisms within traditional automotive power electronics package designs and reliability concerns associated with packaging at higher temperatures and higher heat fluxes will be discussed. Examples of packaging solutions that increase mechanical reliability will be presented and state-of-health (SOH) estimation using offline and online (in situ) techniques will be described.

ADVANCED PROPULSION SYSTEMS,DIRECT ENERGY CONVERSI↗

High-Temperature Passive Power Electronics

In many future NASA missions - such as deep-space exploration, the National AeroSpace Plane, minisatellites, integrated engine electronics, and ion or arcjet thrusters - high-power electrical components and systems must operate reliably and efficiently in high-temperature environments. The high-temperature power electronics program at the NASA Lewis Research Center focuses on dielectric and insulating material research, the development and characterization of high-temperature components, and the integration of the developed components into a demonstrable 200 C power system - such as an inverter. NASA Lewis has developed high-temperature power components through collaborative efforts with the Air Force Wright Laboratory, Northrop Grumman, and the University of Wisconsin. Ceramic and film capacitors, molypermalloy powder inductors, and a coaxially wound transformer were designed, developed, and evaluated for high-temperature operation.

Source record↗

Prognostics of Power Electronics, Methods and Validation Experiments

Abstract Failure of electronic devices is a concern for future electric aircrafts that will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. As a result, investigation of precursors to failure in electronics and prediction of remaining life of electronic components is of key importance. DC-DC power converters are power electronics systems employed typically as sourcing elements for avionics equipment. Current research efforts in prognostics for these power systems focuses on the identification of failure mechanisms and the development of accelerated aging methodologies and systems to accelerate the aging process of test devices, while continuously measuring key electrical and thermal parameters. Preliminary model-based prognostics algorithms have been developed making use of empirical degradation models and physics-inspired degradation model with focus on key components like electrolytic capacitors and power MOSFETs (metal-oxide-semiconductor-field-effect-transistor). This paper presents current results on the development of validation methods for prognostics algorithms of power electrolytic capacitors. Particularly, in the use of accelerated aging systems for algorithm validation. Validation of prognostics algorithms present difficulties in practice due to the lack of run-to-failure experiments in deployed systems. By using accelerated experiments, we circumvent this problem in order to define initial validation activities.

Kulkarni, Chetan S.↗

Advanced Power Electronics Components

This paper will give a description and status of the Advanced Power Electronics Materials and Components Technology program being conducted by the NASA Glenn Research Center for future aerospace power applications. The focus of this research program is on the following: 1) New and/or significantly improved dielectric materials for the development of power capacitors with increased volumetric efficiency, energy density, and operating temperature. Materials being investigated include nanocrystalline and composite ceramic dielectrics and diamond-like carbon films; 2) New and/or significantly improved high frequency, high temperature, low loss soft magnetic materials for the development of transformers/inductors with increased power/energy density, electrical efficiency, and operating temperature. Materials being investigated include nanocrystalline and nanocomposite soft magnetic materials; 3) Packaged high temperature, high power density, high voltage, and low loss SiC diodes and switches. Development of high quality 4H- and 6H- SiC atomically smooth substrates to significantly improve device performance is a major emphasis of the SiC materials program; 4) Demonstration of high temperature (> 200 C) circuits using the components developed above.

Schwarze, Gene E.↗

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging.

ADVANCED PROPULSION SYSTEMS↗

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

High temperature operation of wide bandgap devices continue to be a challenge for the power electronics packages. Thermal performance and reliability are important factors that determine the viability of a bonded interface for operation at high temperatures. In this presentation, we present the technical approach and key results from the research on sintered silver, transient liquid phase alloy, and polymeric materials. A lifetime prediction model that incorporates the thermomechanical behavior of sintered silver at 200C was developed. The copper-aluminum transient alloy completed 350 thermal cycles from -40C to 200C and little increase in the defect level was observed. In addition to material research, we initiated a time-series analysis on the scanning acoustic microscope images of eutectic solder to explore statistical forecasting methods and machine learning techniques. Initial results that report the accuracy of a few different statistical models are presented.

ADVANCED PROPULSION SYSTEMS↗