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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The general architecture of the imaging array, some merits of HgCdTe-on-sapphire as a detector material, and the current status of the laboratory tests and the Short Wave Infrared (SWIR) camera are described.
A development status evaluation is presented for solid-state self-scanned imaging arrays applicable to NASA space science missions, giving attention to the visible and IR spectral range (0.5-1000 microns). Shortward of 1.1 micron, Si CCDs will continue to be used. Beyond 10 microns, the challenge for NASA researchers lies in the development of a class of detectors that can dispense with the conventional cooling to below 10 K. Above 25 microns, extrinsic Ge detectors will be used, and beyond 200 microns, a novel extrinsic material such as GaAs will have to be developed for this application.
A frame-transfer silicon charge-coupled-device (CCD) imager has been developed that can be closely abutted to other imagers on three sides of the imaging array. It is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1-MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-Ohm-cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.
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Applications were demonstrated for hybrid silicon infrared CCD arrays in both ground and space based astronomical instrumentation. The primary goal was to provide a point of departure for both instrument designs and further development of the device. The test device is an indium doped silicon (Si:In) version of the 32 x 32 Rockwell 30331 surface channel hybrid silicon IRCCD. The device structure and a typical instrument interface are shown. The motivation for further study is presented along with a discussion in detail of some of the issues.
PIN photodiodes fabricated from indium gallium arsenide lattice-matched to indium phosphide substrates (In(.53)Ga(.47)As/InP) exhibit low reverse saturation current densities (JD < 10(exp -8) A/sq cm), and high shunt resistance-area products (RoA > 10(exp 6) omega-sq cm) at T=290K. Backside-illuminated, hybrid-integrated InGaAs FPAs are sensitive from 0.9 micrometers to 1.7 micrometers. 290K detectivities, D(*), greater than 10(exp 14) cm-(square root of Hz/W) are demonstrated. This represents the highest room temperature detectivity of any infrared material. The long wavelength cutoff (1.7 micrometers) makes In(.53)Ga(.47)As an idea match to the available airglow that has major peaks at 1.3 micrometers and 1.6 micrometers. The short wavelength 'cut-on' at 0.9 micrometers is due to absorption in the InP substrate. We will report on new InGaAs FPA epitaxial structures and processing techniques. These have resulted in improved performance in the form of a 10 x increase in detectivity and visible response via removal of the InP substrate. The resulting device features visible and SWIR response with greater than 15% quantum efficiency at 0.5 micrometers while maintaining the long wavelength cutoff. Imaging has been demonstrated under overcast starlight/urban glow conditions with cooling provided by a single stage thermoelectric cooler. Details on the material structure and device fabrication, quantitative characterization of spectral response and detectivity, as well as examples of night vision imagery are presented.
The 200-micrometer to 3-mm wavelength range has great astronomical and cosmological significance. Science goals include characterization of the cosmic microwave background, measurement of the Sunyaev-Zel'dovich effect in galaxy clusters, and observations of forming galaxies. Cryogenic bolometers are the most sensitive broadband detectors in this frequency range. Because single bolometer pixels are reaching the photon noise limit for many observations, the development of large arrays will be critical for future science progress. Voltage-biased superconducting bolometers (VSBs) have several advantages compared to other cryogenic bolometers. Their strong negative electrothermal feedback enhances their linearity, speed, and stability. The large noise margin of the SQUID readout enables multiplexed readout schemes, which are necessary for developing large arrays. In this paper, we discuss the development of a large absorber-coupled array, a frequency-domain SQUID readout multiplexer, and an antenna-coupled VSB design.
The GaAs/AlGaAs based Quantum Well Infrared Photodetectors (QWIPs) afford greater flexibility than the usual extrinsically doped semiconductor IR detectors because the wavelength of the peak response and cutoff can be continuously tailored over any wavelength between 6-20 micrometers. The spectral band width of these detectors can be tuned from narrow (DELTA)lamba/lamba approx. 10 %)) to wide (DELTA)lamba/lamba approx. 50 %) allowing various applications. Also, QWIP offers multi-color infrared cameras which is capable of simultaneously acquiring images in different infrared bands. Each pixel of such array consists of vertically stacked, independently readable, QWIP detectors sensitive in different narrow infrared bands. In this article, we discuss the development and results of the 640 x 512 dual-band and four-band QWIP FPAs.
Low noise performance of IR detectors is required, even in the presence of charged particles. Galactic cosmic rays, trapped protons & solar energetic particles. Particle induced transients identified as an important source of noise on ESA's ISO satellite. Also observed on NICMOS Instrument on NASA% Hubble Space Telescope. Tools to analyse particle induced transients have been developed. To date, comparisons of model have been made to flight data for a HgCdTe array exposed to trapped protons, and to a Si array exposed to laboratory protons. We report ground based proton transient measurements in a modem LWlR HgCdTe array operating under cryogenic conditions. Demonstration of charge collection mechanisms. Provide benchmarks for modeling tools.
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In this presentation, we will discuss the development of this large format broadband infrared FPA based on a GaAs/AlGaAs materials system and its performance in quantum efficiency, noise equivalent differential temperature, uniformity, and operability.
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In this paper, we discuss the development of very sensitive very long wavelength infrared (VWIR).
Long wavelength infrared (LWIR) detectors, 8 mm to 12 mm, are of a great interest for variety of.
Long wavelength infrared (LWIR) detectors are of a great interest for variety of space-borne.
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