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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Carbon nanotubes in high-performance perovskite photovoltaics and other emerging optoelectronic applications

Here, we take a look back at the successful integration of carbon nanotubes (CNT) into high-efficiency solar cells based on metal-halide perovskites (MHPs). In addition to these successes, we identify critical questions and issues that remain to be addressed for the functionality of CNTs in MHP-based solar cells. Finally, we look forward toward potential future opportunities for CNT/MHP interfaces, in both new types of photovoltaic devices and other emerging optoelectronic applications.

14 SOLAR ENERGY↗
DOE OSTI2020

Molecular Optoelectronics (Final Technical Report)

The project developed new theoretical tools for analysis of nanodevices subjected to external optical and bias driving. Traditional theoretical techniques for molecular optoelectronics are either based on kinetic schemes or utilize quasiparticle description. The former fails to account for quantum mechanics of the system-bath interface and may fail qualitatively when used in open interacting systems. The latter is inconvenient in (usual for molecular optical spectroscopy) many body states description of the system. We developed a new technique - the Hubbard nonequilibrium Green's functions method - which allows to avoid shortcomings of standard theoretical approaches. The Hubbard NEGF was applied to analysis of experimental measurements of photoinduced current and bias-induced electroluminescence in STM molecular junctions. We also demonstrated practical usefulness of the Hubbard NEGF within newly proposed universal theory of current-induced forces for nonadiabatic molecular dynamics which generalizes celebrated Head-Gordon and Tully expression for electronic friction. Finally, following latest trends in laser techniques we studied local responses (local fluxes and local noise spectroscopy) of biased junctions as a source of information not accessible by total responses (total fluxes and noises) of the system.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Multifunctional Optoelectronic-Spintronic Device Based on Hybrid Organometal Trihalide Perovskites

A novel “hybrid” optoelectronic–spintronic (O-S) device that contains an organometal trihalide perovskite (OTP)-based solar cell or light-emitting diode coupled to an inorganic spin valve is presented. The synergy between the OTP and spin valve components results in two new functionalities: nonlinear magnetophotoconductivity and hysteretic magnetoelectroluminescence.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Synthesis, Photophysical, Electrochemical and Thermal Investigation of Anthracene Doped 2-Naphthol Luminophors and their Thin Films for Optoelectronic Devices

A series of novel luminophors of 2-naphthol by doping anthracene were prepared using conventional solid state reaction technique. The photophysical, electrochemical and thermal properties were studied by Fluorescence spectroscopy, XRD, SEM, TGA-DSC and by Cyclic Voltammetry techniques. The thin films were characterized by Fluorescence spectroscopy. XRD study of fine grained powders exhibited sharp peaks which specify crystallinity and homogeneity of the doped luminophors. The fluorescence spectra of doped 2-naphthol exhibited emission of anthracene at 413 nm i.e. blue emission with instantaneous fluorescence quenching of 2-NP due to excitation energy transfer (EET). Electrochemical data specify that the HOMO and LUMO energy levels of the synthesized luminophors are in the range of 5.55–5.71 eV and 3.03–3.24 eV, respectively. TGA-DSC study confirmed thermal stability of prepared luminophors. Hence, overall study proposes that these luminophors seems applicable to be used as n-type materials for Optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Structural, Magnetic, and Optoelectronic Properties of CuMnSe{sub 2}-Chalcopyrite: DFT + U and Hybrid Functional Investigation

The work presented in this manuscript is a study of structural, magnetic, and optoelectronic properties of CuMnSe{sub 2}-chalcopyrite by FP-(L)APW + lo method using semilocal and hybrid functional. Structural properties such as cell parameters, bulk modulus, and its pressure derivative, as well as the cohesive energy and total energy of the unit cell were determined for the three magnetic phases (AFM, FM, and NM) from which it has been found that CuMnSe{sub 2}-chalcopyrite is ferromagnetic. The studied elastic properties confirm the mechanical stability of CuMnSe{sub 2} in its chalcopyrite structure. Electronic properties, such as the band gap energy, density of states, and charge density, and magnetic properties, such as Hubbard term estimation, magnetic moment, and polarization of the CuMnSe{sub 2}, have been predicted by several methods (GGA-PBEsol + U{sub eff}, GGA-PBEsol-(mBJ) + U{sub eff}, and hybrid functional). Optical properties such as the analysis of the dielectric function and the prediction of the refractive index and birefringence variations were also studied.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Towards fully self-consistent optoelectronic simulation of planar devices

Photon recycling plays an important role in various optoelectronic devices, such as thin-film solar cells and intracavity double-diode structures presently studied for electroluminescent cooling. However, a complete description of photon recycling requires developing fully self-consistent simulation tools of photon and electronic charge transport in realistic device structures. In this paper, we describe a possible route towards such simulation tools in planar devices by combining the radiative transfer (RT) equation of photon transport with the drift-diffusion (DD) equations of electron and hole dynamics. We investigate the feasibility of the approach by selected proof-of-principle device studies. The results indicate that combining the RT and DD models not only yields the expected device characteristics, but also produces new insight into the pertinent local emission and absorption properties within the device structures. In particular, the model allows to accurately investigate how emission directivity and saturation affect the coupling coefficient in the double diode structures, showing that the main contribution to the coupling coefficient arises from the reflectivity of the top contact. For completeness, we also discuss how interference affects photon transport in resonant devices by an example calculation using the quantized fluctuational electrodynamics framework, paving way for self-consistent modeling tools that also account for wave-optical effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Reduced Graphene Oxide–Cadmium Zinc Sulfide Nanocomposite with Controlled Band Gap for Large-Area Thin-Film Optoelectronic Device Application

Herein, we report the one pot single step solvothermal synthesis of reduced grapheme oxide–cadmium zinc sulfide (RGO–Cd{sub 0.5}Zn{sub 0.5}S) composite. The reduction in graphene oxide (GO), synthesis of Cd{sub 0.5}Zn{sub 0.5}S (mentioned as CdZnS in the text) nanorod and decoration of CdZnS nanorods onto RGO sheet were done simultaneously. The structural, morphological and optical properties were studied thoroughly by different techniques, such as XRD, TEM, UV–Vis and PL. The PL intensity of CdZnS nanorods quenches significantly after the attachment of RGO, which confirms photoinduced charge transformation from CdZnS nanorods to RGO sheet through the interface of RGO–CdZnS. An excellent photocurrent generation in RGO–CdZnS thin-film device has been observed under simulated solar light irradiation. The photocurrent as well as photosensitivity increases linearly with the solar light intensity for all the composites. Our study establishes that the synergistic effect of RGO and CdZnS in the composite is capable of getting promising applications in the field of optoelectronic devising.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

First principles study of structural, optoelectronic and thermoelectric properties of Cu{sub 2}CdSnX{sub 4} (X = S, Se, Te) chalcogenides

Highlights: • Copper based quaternary chalcogenides are important for optoelectronic devices. • The WC-GGA shows that the materials are metallic in nature. • The EV-GGA predicts better band gaps compared to WC-GGA. • Absorption peaks are high in the visible and ultraviolet energy regions. • All the semiconductors have figure of merit above 0.70. - Abstract: In this work, structural, electronic, optical and thermoelectric properties of Cu{sub 2}CdSnX{sub 4} (X = S, Se, Te) have been studied through the full potential linearized augmented plane wave method. Calculated ground state lattice parameters are in good agreement with the experimental results. Lattice constant and bulk moduli vary inversely by replacing the anion X from S to Te in Cu{sub 2}CdSnX{sub 4}. The WC-GGA shows that the materials are metallic in nature. The EV-GGA predicts better band gaps compared to WC-GGA. The calculated bandgap values are 1.8, 1.06 and 0.8042 for Cu{sub 2}CdSnX{sub 4}, Cu{sub 2}CdSnX{sub 4}, Cu{sub 2}CdSnX{sub 4} respectively. Cd-d, Sn-s and X-p states contribute significantly in the density of states of the compounds. Absorption peaks and optical conductivity is high in the visible and ultraviolet energy regions. All the semiconductors have figure of merit above 0.70. The optical and thermoelectric properties clearly show that Cu{sub 2}CdSnX{sub 4} are potential candidates in the fields of solar cell and thermoelectric technology.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Optoelectronic Properties of Strontium and Barium Copper Sulfides Prepared by Combinatorial Sputtering

Optically transparent materials with p-type electrical conductivity can facilitate the development of transparent electronics and improve the efficiency of photovoltaic solar cells. Sulfide materials represent an interesting alternative to oxides for these applications due to better hole transport properties. We prepare transparent and conductive Ba-Cu-S thin films by combinatorial cosputtering and characterized for their composition, structure, and optoelectronic properties. The conductivity and transparency of these films are found to be strongly dependent on their chemical composition and the substrate temperature during growth. The conductivity of BaCu 2 S 2 and BaCu 4 S 3 can reach 53 S/cm (at 250 °C) and 74 S/cm (at 200 degrees C), respectively, which is higher than their solution processed/bulk counterparts. The 90% reflectance corrected transmittance is achieved in the wavelength range 600-1000 nm for BaCu 2 S 2 and 650-1000 nm for BaCu 4 S 3 (at 250 °C). These electrical and optical properties are comparable with other recently presented transparent p-type conductors, while the 200-350 degrees C processing temperature is low enough to be used in semiconductor devices with limited thermal budgets. Some attempts have been made to synthesize the related Sr-Cu-S materials, following the theoretical suggestion of their potential as transparent p-type conductors, but these attempts resulted only in phase-separated SrS and CuxS phases. Alloying BaCu 2 S 2 with Sr on the Ba site on the other hand increases the conductivity to >100 S/cm while only slightly compromising the transparency of the material. To explain the difference between the Ba and the Sr containing copper sulfides, the lower bounds on the SrCu 2 S 2 and SrCu 4 S 3 formation enthalpies are estimated. While the doping of the Ba-Cu-S materials presented here is too large for application in transparent electronics, it is promising for potential use as p-type contact layers in thin film solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Lattice Expansion in Hybrid Perovskites: Effect on Optoelectronic Properties and Charge Carrier Dynamics

Hybrid halide perovskites frequently undergo structural expansion which significantly affects their electronic properties and in particular charge carrier dynamics. Various stimuli such as residual strain, light illumination, compositional engineering may deform the soft lattices of these materials. It is essential to atomistically model how geometric changes modify electronic characteristics important for applications such as light harvesting or lighting. Using ab initio simulations, here we investigate the structural dynamics and optoelectronic properties of FAPbI 3 under tensile strain. The applied strain leads to elongation of the Pb-I bonds and a reduction of PbI 6 octahedra tilting, which manifests as a blue-shifts in band gaps. Nonadiabatic molecular dynamics simulations further reveal that charge carrier recombination rates moderately slow down in these expanded lattices. Complex influences of lattice dynamics on elastic and inelastic electron-phonon scattering results in longer carrier lifetime which is advantageous for efficient solar cells. By providing detailed information on the structure-property relationships, this work emphasizes the role of controlled lattice expansion on enhancing the electronic functionalities of hybrid perovskites.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Giant Mechano-Optoelectronic Effect in an Atomically Thin Semiconductor

Transition metal dichalcogenides (TMDs) are particularly sensitive to mechanical strain as they are capable of experiencing high atomic displacements without nucleating defects to release excess energy. Promising for photonic applications, it has been shown that as TMDs are scaled to a thickness of one monolayer, the photoluminescence response is dramatically enhanced due to the emergence of a direct electronic band gap, compared with multi-layer or bulk TMDs which typically exhibit indirect band gaps. Recently, mechanical strain has also been predicted to enable direct excitonic recombination in these materials, where large changes in the photoluminescence response will occur during an indirect-to-direct band gap transition brought on by elastic tensile strain. Here, we demonstrate a two orders of magnitude enhancement in the photoluminescence emission intensity in uniaxially strained single crystalline WSe 2 bilayers. Through a theoretical model which includes experimentally relevant system conditions, we determine this amplification to arise from a significant increase in direct excitonic recombination. Adding confidence to the high levels of elastic strain achieved in this report, we observe strain-independent mode-dependent Grüneisen parameters over the entire range of tensile strain (1– 3.59 %) which were obtained as 1.149±0.027, 0.307±0.061, and 0.357±0.103 for the E 2g , A 1g , and A 2 1g optical phonon modes, respectively. Lastly, these results can inform the predictive strain-engineered design of other atomically thin indirect semiconductors, where a decrease in out-of-plane bonding strength will lead to an increase in the strength of strain-coupled optoelectronic effects.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Few-Layer to Multilayer Germanium(II) Sulfide: Synthesis, Structure, Stability, and Optoelectronics

Among 2D/layered semiconductors, group IV monochalcogenides such as SnS(e) and GeS(e) have attracted attention as phosphorene/black phosphorus analogues with anisotropic structures and predicted unusual properties. In contrast to SnS, for which bottom-up synthesis has been reported, few-layer GeS has been realized primarily via exfoliation from bulk crystals. Here, we report the synthesis of large (up to >20 μm), faceted single crystalline GeS flakes with anisotropic properties using a vapor transport process. In situ electron microscopy is used to identify the thermal stability and sublimation pathways, and demonstrates that the GeS flakes are self-encapsulated in a thin, sulfur-rich amorphous GeS x shell during growth. Here, the shell provides exceptional chemical stability to the layered GeS core. In contrast to exfoliated GeS, which rapidly degrades during exposure to air, the synthesized GeS–GeS x core–shell structures show no signs of chemical attack and remain unchanged in air for extended time periods. Measurements of the optoelectronic properties by photoluminescence spectroscopy show a tunable bandgap due to out-of-plane quantum confinement in flakes with thickness below 100 nm. Cathodoluminescence (CL) spectroscopy with nanoscale excitation provides evidence for interfacial charge transfer due to a type II heterojunction between the crystalline core and amorphous shell. Measurements by locally excited CL yield a minority carrier (electron) diffusion length in the p-type GeS core l diff = 0.27 μm, on par with diffusion lengths in the highest-quality layered chalcogenide semiconductors.

42 ENGINEERING↗
DOE OSTI2023

Introduction to Halide Perovskite Optoelectronics

An introduction to the Nanoscale themed collection on halide perovskite nanomaterials for optoelectronic applications, featuring a variety of articles that highlight the latest developments to address ongoing challenges in the field.

halide perovskite nanomaterials↗
DOE OSTI2016

Theoretical investigation of carrier transfer by an optical contacting scheme for optoelectronic application

As a promising charge carrier transfer scheme, optical coupling could potentially improve the performance of an optoelectronic device for energy harvesting based on well developed nanotechnology. By extracting carriers optically, the functional features of the nano-structured material could be better used by minimizing the concerns about its electrical properties. In this paper, we present a rigorous electromagnetic model to analyze the optical carrier transfer problem. The flow of the energy is analyzed carefully by the photon transfer spectrum, and the photon emitters (electron-hole pairs) are assumed in a thermal equilibrium described by Bose-Einstein distribution. The result shows that an energy selective carrier transfer can be optically achieved at the device level by integrating the emitter and receiver into a nano-optical resonator, where both the photon emission and absorption are significantly amplified by a near-field coupling around the resonant frequency. General design and optimization schemes in practice are addressed by examining the influence of the photonic design and an energy dependent emissivity of the emitter, which can be used to develop the optical contacting concept further.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications

The optical properties of intersubband transition in a semipolar AlGaN/GaN single quantum well (SQW) are theoretically studied, and the results are compared with polar c-plane and nonpolar m-plane structures. The intersubband transition frequency, dipole matrix elements, and absorption spectra are calculated for SQW on different semipolar planes. It is found that SQW on a certain group of semipolar planes (55° < θ < 90° tilted from c-plane) exhibits low transition frequency and long wavelength response with high absorption quantum efficiency, which is attributed to the weak polarization-related effects. Furthermore, these semipolar SQWs show tunable transition frequency and absorption wavelength with different quantum well thicknesses, and stable device performance can be achieved with changing barrier thickness and Al compositions. All the results indicate that the semipolar AlGaN/GaN quantum wells are promising candidate for the design and fabrication of high performance low frequency and long wavelength optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Structural and optical properties of silicon rich oxide films in graded-stoichiometric multilayers for optoelectronic devices

Silicon nanocrystals (Si-ncs) are excellent candidates for the development of optoelectronic devices. Nevertheless, different strategies are still necessary to enhance their photo and electroluminescent properties by controlling their structural and compositional properties. In this work, the effect of the stoichiometry and structure on the optical properties of silicon rich oxide (SRO) films in a multilayered (ML) structure is studied. SRO MLs with silicon excess gradually increased towards the top and bottom and towards the center of the ML produced through the variation of the stoichiometry in each SRO layer were fabricated and confirmed by X-ray photoelectron spectroscopy. Si-ncs with three main sizes were observed by a transmission electron microscope, in agreement with the stoichiometric profile of each SRO layer. The presence of the three sized Si-ncs and some oxygen related defects enhances intense violet/blue and red photoluminescence (PL) bands. The SRO MLs were super-enriched with additional excess silicon by Si{sup +} implantation, which enhanced the PL intensity. Oxygen-related defects and small Si-ncs (<2 nm) are mostly generated during ion implantation enhancing the violet/blue band to become comparable to the red band. The structural, compositional, and luminescent characteristics of the multilayers are the result of the contribution of the individual characteristics of each layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 μ m

GaInAsSbBi alloys are grown lattice-matched on GaSb by molecular beam epitaxy demonstrating smooth surface morphologies, >5 μm wavelength photoluminescence emission, and minority carrier lifetimes >1 μs. At a growth temperature of 400 °C, the Ga flux is systematically increased and the Bi flux systematically decreased to identify GaInAsSbBi growth conditions that yield smooth droplet-free surface morphologies. The minority carrier lifetime is evaluated using time-resolved photoluminescence, where it is observed that GaInAsSbBi samples exhibit minority carrier lifetimes comparable to their Bi-free GaInAsSb counterparts, on the order of 1.5–2 μs. The bandgap and Urbach energy are evaluated from steady-state photoluminescence to gain insight into the impact of the incorporated Bi. Coupled with Rutherford backscattering spectrometry measurements of the Bi mole fraction, bandgap reduction rates of 97 meV/% Bi in InAsSbBi and 150 meV/% Bi in GaInAsSbBi are observed, significantly higher than previous evaluations in InAsSbBi (35–55 meV/% Bi). Detailed comparisons of the Bi mole fraction, bandgap energy, and Urbach energy indicate that the bandgap reduction potential in this alloy system is inhibited by the formation of Bi clusters; however, the inclusion of Ga in the quinary alloy is effective in suppressing Bi's tendency to incorporate in clusters for Ga mole fractions >9%, maximizing the bandgap reduction per unit Bi and overall optoelectronic quality.

Atomic force microscopy↗
DOE OSTI2018

Intrinsic Defect Properties in Halide Double Perovskites for Optoelectronic Applications

Lead-free halide double perovskites with the formula of quaternary A 2 + B + B ' 3 + X 6 - have recently attracted intense interest as alternatives to lead-halide-perovskite-based optoelectronic materials for their nontoxicity and enhanced chemical and thermodynamic stability. However, the understanding of intrinsic defect properties and their effects on carrier transport and Fermi level tuning is still limited. In this paper, we show that, by exploring the phase diagram of a halide double perovskite, one can control the effects of intrinsic defects on carrier trapping and Fermi-level pinning. Furthermore, we reveal the ideal growth conditions to grow p type Cs 2 Ag In Cl 6 and Cs 2 Ag Bi Cl 6 as well as semi-insulating Cs 2 Ag Bi Br 6 with low trap density for targeted photovoltaic or visible light/radiation detection application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗