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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Facile synthesis of high surface area molybdenum nitride and carbide

The synthesis of high surface area γ-Mo{sub 2}N and α-Mo{sub 2}C is reported (116 and 120 m{sup 2}/g) without the temperature programmed reduction of MoO{sub 3}. γ-Mo{sub 2}N was prepared in an NH{sub 3}-free synthesis using forming gas (7 at% H{sub 2}, N{sub 2}-balance) as the reactive atmosphere. Three precursors were studied ((NH{sub 4}){sub 6}Mo{sub 7}O{sub 24}·4H{sub 2}O, (NH{sub 4}){sub 2} Mg(MoO{sub 4}){sub 2}, and MgMoO{sub 4}) along with the sacrificial support method (SSM) as a means of reducing the particle size of Mo{sub 2}N and Mo{sub 2}C. In situ X-ray diffraction (XRD) studies were carried out to identify reaction intermediates, the temperature at which various intermediates form, and the average domain size of the Mo{sub 2}N products. Materials were synthesized in bulk and further characterized by XRD, HRTEM, XPS, and BET. - Highlights: • Facile synthesis of γ-Mo2N and α-Mo2C with surface area exceeding 100 m{sup 2}/g. • Sacrificial support method was used to achieve these high surface areas. • Materials can serve as catalysts or supports in (electro)chemical processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Air stable n-doping of WSe{sub 2} by silicon nitride thin films with tunable fixed charge density

Stable n-doping of WSe{sub 2} using thin films of SiN{sub x} deposited on the surface via plasma-enhanced chemical vapor deposition is presented. Positive fixed charge centers inside SiN{sub x} act to dope WSe{sub 2} thin flakes n-type via field-induced effect. The electron concentration in WSe{sub 2} can be well controlled up to the degenerate limit by simply adjusting the stoichiometry of the SiN{sub x} through deposition process parameters. For the high doping limit, the Schottky barrier width at the metal/WSe{sub 2} junction is significantly thinned, allowing for efficient electron injection via tunneling. Using this doping scheme, we demonstrate air-stable WSe{sub 2} n-MOSFETs with a mobility of ∼70 cm{sup 2}/V s.

36 MATERIALS SCIENCE↗
DOE OSTI2014

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Review of using gallium nitride for ionizing radiation detection

With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by {sup 14}N(n,p){sup 14}C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗