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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Influence of gadolinium doping on structural, optical, and electronic properties of polymeric graphitic carbon nitride

Polymeric graphitic carbon nitride (gCN) materials have received great attention in the fields of photo and electrocatalysis due to their distinct properties in metal-free systems with high physicochemical stability. Nevertheless, the activity of undoped gCN is limited due to its relatively low specific surface area, low conductivity, and poor dispersibility. Doping Gd atoms in a gCN matrix is an efficient strategy to fine-tune its catalytic activity and its electronic structure. Herein, the influence of various wt% of gadolinium (Gd) doped in melon-type carbon nitride was systematically investigated. Gadolinium-doped graphitic carbon nitride (GdgCN) was synthesized by adding gadolinium nitrate to dicyandiamide during polymerization. The X-ray diffraction (XRD) and transmission electron microscopy (TEM) results revealed that the crystallinity and the morphological properties are influenced by the % of Gd doping. Furthermore, X-ray photoelectron spectroscopy (XPS) studies revealed that the gadolinium ions bonded with nitrogen atoms. Complementary density functional theory (DFT) calculations illustrate possible bonding configurations of Gd ions both in bulk material and on ultrathin melon layers and provide evidence for the corresponding bandgap modifications induced by gadolinium doping.

36 MATERIALS SCIENCE↗
DOE OSTI2025

MXene/graphitic carbon nitride-supported metal selenide for all-solid-state flexible supercapacitor and oxygen evolution reaction

We report a new type of combination of rare earth metal selenides (Ce 2 Se 3 and Er 2 Se 3 ) with a Ti 3 C 2 T x /S-doped graphitic carbon nitride heterostructure for bifunctional application in flexible supercapacitors and oxygen evolution reactions. The incorporation of S-doped graphitic carbon nitride in MXenes reduced the layer stacking tendency of both two-dimensional sheets and eliminated volume expansion by forming a heterostructure. Cerium and erbium rare earth metal centers induce reactive surface sites, whereas binary layers of Ti 3 C 2 T x /S-doped graphitic carbon nitride provide a conducting matrix for the homogeneous growth of the metal selenides. The assembled all-solid-state flexible asymmetric supercapacitor exhibited a high specific capacitance of 60 F g –1 , an energy density of 10.1 W h kg –1 (volumetric energy density: 0.9 mW h cm –3 ) at 2 A g –1 , and 100% capacitance retention after 10 000 charge–discharge cycles with good flexibility for real-time applications. Furthermore, the optimum nanohybrid showed a low overpotential of 280 mV and a Tafel slope of 99 mV dec –1 with durable electrocatalytic performance. Furthermore, this work is the first to investigate the bifunctional energy efficiency of rare earth metal selenides grown over MXene materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Aluminum scandium nitride films for piezoelectric transduction into silicon at gigahertz frequencies

Recent advances in the growth of aluminum scandium nitride films on silicon suggest that this material platform could be applied for quantum electromechanical applications. Here, we model, fabricate, and characterize microwave frequency silicon phononic delay lines with transducers formed in an adjacent aluminum scandium nitride layer to evaluate aluminum scandium nitride films, at 32% scandium, on silicon interdigital transducers for piezoelectric transduction into suspended silicon membranes. We achieve an electromechanical coupling coefficient of 2.7% for the extensional symmetric-like Lamb mode supported in the suspended material stack and show how this coupling coefficient could be increased to at least 8.5%, which would further boost transduction efficiency and reduce the device footprint. The one-sided transduction efficiency, which quantifies the efficiency at which the source of microwave photons is converted to microwave phonons in the silicon membrane, is 10% at 5 GHz at room temperature and, as we discuss, there is a path to increase this toward near-unity efficiency based on a combination of modified device design and operation at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermo-optic properties of silicon-rich silicon nitride for on-chip applications

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10 −4 K -1 . Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.

Nejadriahi, Hani↗
DOE OSTI2020

Disorder effects in nitride semiconductors: impact on fundamental and device properties

Abstract Semiconductor structures used for fundamental or device applications most often incorporate alloy materials. In “usual” or “common” III–V alloys, based on the InGaAsP or InGaAlAs material systems, the effects of compositional disorder on the electronic properties can be treated in a perturbative approach. This is not the case in the more recent nitride-based GaInAlN alloys, where the potential changes associated with the various atoms induce strong localization effects, which cannot be described perturbatively. Since the early studies of these materials and devices, disorder effects have indeed been identified to play a major role in their properties. Although many studies have been performed on the structural characterization of materials, on intrinsic electronic localization properties, and on the impact of disorder on device operation, there are still many open questions on all these topics. Taking disorder into account also leads to unmanageable problems in simulations. As a prerequisite to address material and device simulations, a critical examination of experiments must be considered to ensure that one measures intrinsic parameters as these materials are difficult to grow with low defect densities. A specific property of nitride semiconductors that can obscure intrinsic properties is the strong spontaneous and piezoelectric fields. We outline in this review the remaining challenges faced when attempting to fully describe nitride-based material systems, taking the examples of LEDs. The objectives of a better understanding of disorder phenomena are to explain the hidden phenomena often forcing one to use ad hoc parameters, or additional poorly defined concepts, to make simulations agree with experiments. Finally, we describe a novel simulation tool based on a mathematical breakthrough to solve the Schrödinger equation in disordered potentials that facilitates 3D simulations that include alloy disorder.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Design, Modeling, and Testing of a Novel Inductor for Electric Vehicles: Iron Nitride Soft Magnetic Composites

New technology for electric vehicles (EVs) must meet the requirements of higher energy usage, lower costs, and more sustainable source materials. One promising material for EV power system components is iron nitride (IN) soft magnetic composites (SMCs) because of their competitive magnetic properties and high abundance of the source materials. As part of an ongoing program at Sandia National Laboratories, this project focused on using computer modeling to optimize the prototyping process for an iron nitride SMC toroidal inductor to reach a target inductance of 600 μH. Four inductors with different combinations of wiring (26 AWG and 20 AWG) and vol% loading of iron nitride (65 vol% and 50 vol%) were fabricated at Cal Poly and characterized using an LCR meter. These inductors were also modeled using COMSOL Multiphysics™ with the Magnetic Fields module. The inductance data from the experiment and the model show that the 65 vol% IN prototypes and models agree with about 8% difference, while the 50 vol% IN samples show about a 9% difference between the prototype and the model. These results suggest that the model can predict inductance with both accuracy and precision with low confidence for the given sample size of four. An additional parameter of AC resistance is studied but the AC resistance results from the inductors and from the model generally do not agree closely, suggesting that the current model used in the project does not fully capture the mechanisms behind AC resistance of the inductor. With the focus of the project on inductance, the percent difference results of less than 9% across the four inductors that were tested increases confidence in the model’s predictive capabilities for inductance only. Using the inductance results from both the model and experiment, the final suggested inductor design is a 65 vol% core with 150 windings of 20 AWG wire that is 8 cm across and 1.5 cm tall to reach the inductance goal of 600 μH based on analysis using the optimized COMSOLTM model.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2020

Nitride- and oxide-modified electrode compositions and their methods of making

Compositions and methods of making compositions are provided for nitride- and/or oxide-modified electrode compositions. In certain embodiments, the nitride- and/or oxide-modified compositions have the general formula M 1-z M′ z OaF 3-x N y . Such compositions may be used as bulk or surface compositions, and used in a battery as the anode or cathode. In other embodiments, the electrode includes a surface coating composition selected from metal nitrides and metal oxides, and a core composition having the formula M 1-z M′ z OaF 3-x N y , or an oxide fluoride.

Bridges, Craig A.↗
DOE OSTI2022

Efficiency Improvement Progress in Green, Yellow and Red III Nitride LEDs

Large improvements in the efficiencies of visible light emitting diodes (LEDs) have been realized over the last decade. Extending the range of wavelengths over which efficient emission can be realized continues to be a goal of active research. Efficiency droop refers to a non-thermal decrease in internal quantum efficiency with increasing current density that affects III-nitride LEDs in general, but more severely those with longer emission wavelengths. The so-called green gap is mainly related to the wavelength dependence of efficiency droop. The peak EQE in commercial green LEDs exceeds 60% but corresponds to a current density that is an order of magnitude lower than required for applications. In this presentation, we will review some of the underlying physics that contribute to the wavelength dependence of droop. We will discuss some challenges in the development of long wavelength III-nitride LEDs and possible strategies to mitigate efficiency droop based on the understanding that nonradiative Auger recombination is the root cause. One general strategy is to engineer the multi-quantum well active region to minimize the average carrier density. Another approach is to design wells with a more favorable balance between the radiative and Auger coefficients. Finally, we will present the current status of the performance of green, yellow and red III-Nitride LEDs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2022

Machine learning prediction and experimental verification of Pt-modified nitride catalysts for ethanol reforming with reduced precious metal loading

Ethanol is the smallest molecule containing C–O, C–C, C–H, and O–H bonds present in biomass-derived oxygenates. The development of inexpensive and selective catalysts for ethanol reforming is important towards the renewable generation of hydrogen from biomass. Transition metal nitrides (TMN) are interesting catalyst support materials that can effectively reduce precious metal loading for the catalysis of ethanol and other oxygenates. Herein theoretical and experimental methods were used to probe platinum-modified molybdenum nitride (Pt/Mo 2 N) surfaces for ethanol reforming. Computations using density-functional theory and machine learning predicted monolayer Pt/Mo 2 N to be highly active and selective for ethanol reforming. Temperature-programmed desorption (TPD) experiments verified that ethanol primarily underwent decomposition on Mo 2 N, and the reaction pathway shifted to reforming on Pt/Mo 2 N surfaces. Additionally, high-resolution electron energy loss spectroscopy (HREELS) results further indicated that while Mo2N decomposed the ethoxy intermediate by cleaving C–C, C–O, and C–H bonds, Pt-modification preserved the C–O bond, resulting in ethanol reforming.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

First-Principles Predictions of Out-of-Plane Group IV and V Dimers as High-Symmetry, High-Spin Defects in Hexagonal Boron Nitride

Hexagonal boron nitride (h-BN) has been recently found to host a variety of quantum point defects, which are promising candidates as single-photon sources for solid-state quantum nanophotonic applications. Most recently, optically addressable spin qubits in h-BN have been the focus of intensive research due to their unique potential in quantum computation, communication, and sensing. However, the number of high-symmetry, high-spin defects that are desirable for developing spin qubits in h-BN is highly limited. Here, we combine density functional theory (DFT) and quantum embedding theories to show that out-of-plane X N Y i dimer defects (X, Y = C, N, P, and Si) form a new class of stable C 3v spin-triplet defects in h-BN. We find that the dimer defects have a robust 3 A 2 ground state and 3 E excited state, both of which are isolated from the h-BN bulk states. We show that 1 E and 1 A shelving states exist and they are positioned between the 3 E and 3 A 2 states for all the dimer defects considered in this study. To support future experimental identification of the X N Y i dimer defects, we provide extensive characterization of the defects in terms of their spin and optical properties. We predict that the zero-phonon line of the spin-triplet X N Y i defects lies in the visible range (800 nm to 500 nm). We compute the zero-field splitting of the dimers’ spin to range from 1.79 GHz (Si N P i o ) to 29.5 GHz (C N N i o ). Furthermore, our results broaden the scope of high-spin defect candidates that would be useful for the development of spin-based solid-state quantum technologies in two-dimensional hexagonal boron nitride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Transforming Boron Carbon Nitride: A Carbon-to-Oxygen Switch to Boost Propane Oxidative Dehydrogenation

Hexagonal boron nitride (h-BN) catalysts exhibit high alkene selectivity in the oxidative dehydrogenation of propane (ODHP). Nevertheless, the conversion-selectivity trade-off persisted primarily due to the low density of oxygen-containing boron active species, while simple and controllable modification strategies for h-BN still face challenges. Herein, we developed an in situ carbon-to-oxygen switch strategy within a tailored boron carbon nitride (BCN) framework, in which uniformly embedded B–C 3 were transformed into B–O 3 via oxidative treatment (denoted as BNO x ). The structural evolution from B–C 3 to B–O 3 was well characterized by spectroscopy and soft X-ray absorption techniques. The resulting BNO x catalysts, enriched with B–O 3 units, demonstrated performance in ODHP, achieving a propane conversion of 50.4% with 32.7% olefin yield at 500 °C. Density functional theory (DFT) calculations confirmed that B–O 3 species preferentially lower activation barriers, rendering the process thermodynamically more favorable. In conclusion, this work introduced an in situ reconstruction method for atomic-level heteroatom-engineered h-BN catalysts, opening an avenue for advanced catalyst design across energy conversion systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates

Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the very limited studies on single crystalline systems. To expand the potential materials for these systems, this work explores the deposition of zirconium nitride superconducting thin films on GaN substrates at various temperatures using molecular beam epitaxy. A general trend of decreasing superconducting critical temperature is observed as the deposition temperature is reduced. The optical properties reveal a transition from metallic to dielectric behavior with colder deposition. The plasma frequency of the metallic films is also observed to be a function of growth temperature. These results pave the way for the integration of a highly tunable metal nitride with a well-established semiconductor system.

36 MATERIALS SCIENCE↗
DOE OSTI2020

3D Hybrid Plasmonic Framework with Au Nanopillars Embedded in Nitride Multilayers Integrated on Si

Integration of nanoscale photonic and plasmonic components on Si substrates is a critical step toward Si-based integrated nanophotonic devices. Herein, a set of unique complex 3D metamaterials with intercalated nanolayered and nanopillar structures with tunable plasmonic and optical properties on Si substrates is designed. More specifically, the 3D metamaterials combine metal (Au) nanopillars and alternating metal-nitride (Au-TiN and Au-TaN) nanolayers, epitaxially grown on Si substrates. The ultrafine Au nanopillars ( d ≈ 3 nm) continuously grow throughout all the nanolayers with high epitaxial quality. Novel optical properties, such as highly anisotropic optical property, high absorbance covering the entire visible spectrum regime, and hyperbolic property in the visible regime, are demonstrated. Furthermore, a waveguide based on a silicon nitride (Si 3 N 4 ) ridge with a multilayer structure is successfully fabricated. The demonstration of 3D nanoscale metamaterial design integrated on Si opens up a new route toward tunable metamaterials nanostructure designs with versatile material selection for various optical components in Si integrated photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photophysics of Intrinsic Single‐Photon Emitters in Silicon Nitride at Low Temperatures

A robust process for fabricating intrinsic single-photon emitters in silicon nitride is recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with technologically mature silicon nitride photonics platforms. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2 to 300 K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent broadening of the zero-phonon lines. At 4.2 K, spectral diffusion is found to be the main broadening mechanism, while spectroscopy time series reveal zero-phonon lines with instrument-limited linewidths.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators

Niobium nitride (NbN) is a useful material for fabricating detectors because of its high critical temperature and relatively high kinetic inductance. In particular, NbN can be used to fabricate nanowire detectors and mm-wave transmission lines. When deposited, NbN is usually sputtered, leaving room for concern about uniformity at small thicknesses. In this work, we present atomic layer deposition niobium nitride (ALD NbN) as an alternative technique that allows for precision control of deposition parameters such as film thickness, stage temperature, and nitrogen composition. Atomic-scale control over film thickness admits a high degree of uniformity for films 4–30 nm thick; control over deposition temperature gives rise to growth rate changes, which can be used to optimize film thickness and critical temperature. In order to charac- terize ALD NbN in the radio-frequency regime, we construct single-layer micro- wave resonators and test their performance as a function of stage temperature and input power. ALD processes can admit high resonator quality factors, with ≥ 43% of resonators above Q i = 10 6 , which in turn increase detector multiplexing capabilities. i Furthermore, we find critical temperatures in the range of 7.5–10.9 K that vary as a function of cycle count and deposition temperature.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

CALPHAD modeling of uranium nitride (UN) fabrication routes enabled by first-principles calculations

The thermochemical details of fabricating uranium nitride (UN) by ammonolysis of uranium tetraflouride (UF 4 ) were determined using density functional theory (DFT) and CALculation of PHAse Diagrams (CALPHAD) computational methods. The thermochemical data of all binary, ternary, and quaternary U-H-N-F phases were computed using DFT, and the data for the phases that have not been measured experimentally, including UN 2 and NH 4 F(g), were combined with existing experimentally-determined data for CALPHAD modeling. The DFT data were benchmarked using experimental Gibbs energy of reaction and experimental thermochemical data for individual species. Phase diagrams relevant to the ammonolysis reaction are depicted, showing regions of stability for solid U-N, U-F and U-N-F phases. An unidentified phase produced in a previous experiment was identified as UN 0.95 F 1.2 (UNF) by comparing its X-ray diffraction spectrum to the experimental spectrum, and its formation during the fabrication of UN from UF 4 is supported by the simulated phase diagram. Here, it is calculated that UN 2 can be produced by the ammonolysis of UF 4 , but requires elevated temperatures, high NH 3 (g) partial pressure, and large amounts of flowing NH 3 (g) to avoid solid flu oride impurities in the uranium nitride. Likewise, U 2 N 3 can be produced instead at temperatures greater than 980 K. The use of silane (SiH 4 ) gas was investigated as a potential additive in the ammonolysis fabrication route to speed removal of fluorine. The addition of SiH 4 (g) offers little advantage to the removal of fluorine, and adds the complication of Si 3 N 4 formation. The use of DFT to fill in missing data to perform CALPHAD calculations demonstrated here allows for the determination of more comprehensive and trustworthy phase diagrams than the use of existing experimental data alone.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Ductility evaluation of nitrided Zircaloy-4 cladding by ring compression testing

Here, this study evaluated the embrittlement of Zircaloy-4 cladding by dry air and dry nitrogen environments as a function of process temperature and duration of exposure. A Netzsch thermogravimetric analyzer was used to measure the mass gain of cladding sections over time with specified temperature and gas flow programs. Oxidation of Zircaloy in dry air produced a brittle ZrO 2 layer with ductile unreacted metal. In contrast, nitridation of Zircaloy had a slower reaction rate but produced a brittle cladding that was more easily breached during ring compression tests. The ring compression tests demonstrated that ductility of Zircaloy cladding decreases as nitrogen pickup increases; a ductile-to-brittle transition occurs near a mass gain of 2.1 wt %. Nitridation showed minimal temperature dependency in ductility degradation, whereas oxidation showed significant temperature dependency in ductility degradation, with severe embrittlement occurring at 1200 °C. Optical micrographs confirmed the formation of uniform ZrN layers (approximately 12 µm thick) on the cladding surface, indicating that cladding embrittlement is primarily the result of nitrogen diffusion rather than metal layer thinning.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Weakening the N–H Bonds of NH 3 Ligands: Triple Hydrogen-Atom Abstraction to Form a Chromium(V) Nitride

Weakening and cleaving N-H bonds is crucial for improving molecular ammonia oxidation catalysts. In this work, we report the synthesis and hydrogen atom abstraction chemistry of bis(ammonia) Cr porphyrin complexes Cr(TPP)(NH 3 ) 2 and Cr(TMP)(NH 3 ) 2 (TPP = 5,10,15,20-tetraphenyl-meso-porphyrin and TMP = 5,10,15,20-tetramesityl-meso-porphyrin) using bulky aryloxyl radicals. The triple hydrogen atom abstraction reaction results in the formation of Cr V (por)(≡N), with the nitride deriving from ammonia, as indicated by UV-Vis and FT-IR spectroscopy, and a single crystal structural determination of Cr(TPP)(≡N). Subsequent oxidation of this chromium(V)-nitrido complex results in the formation of Cr III (por), with scission of the Cr≡N bond. A computational analysis illustrates the progression from Cr II to Cr V and evaluates the energetics of abstracting hydrogen atoms from Cr II -NH 3 to generate Cr V ≡N. The formation and isolation of Cr V (por)(≡N) illustrates the stability of these species and the need to chemically activate the nitride moiety for atom transfer or N-N coupling reactivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗