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All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Normal and abnormal turbulent transport in a stratified medium

The influences of memory effects, coupling between velocity and temperature fluctuations and tensorial transport properties on momentum and heat transfers in turbulent flow which do not follow the Boussinesq relation are examined. It is shown that the memory effect, represented by the Lagrangian of the velocity gradients, can account for the decoupling between the flux and the gradient, while the tensorial properties of the transport coefficients allow a normal Boussinesq-type transfer with memory and anomalous counter-gradient or gradient-less transport.

Tchen, C.-M.↗
DOE OSTI2015

Non-Markovian effect on remote state preparation

Memory effect of non-Markovian dynamics in open quantum systems is often believed to be beneficial for quantum information processing. In this work, we employ an experimentally controllable two-photon open system, with one photon experiencing a dephasing environment and the other being free from noise, to show that non-Markovian effect may also have a negative impact on quantum tasks such as remote state preparation: For a certain period of controlled time interval, stronger non-Markovian effect yields lower fidelity of remote state preparation, as opposed to the common wisdom that more information leads to better performance. As a comparison, a positive non-Markovian effect on the RSP fidelity with another typical non-Markovian noise is analyzed. Consequently, the observed dual character of non-Markovian effect will be of great importance in the field of open systems engineering.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Surface Treatment Strategies for Mitigating Gas Hydrate & Asphaltene Formation, Growth, and Deposition in Flowloops

Abstract Numerous solids including gas hydrates, waxes, and asphaltenes have the potential to form in the production lines of gas and oil fields. This creates a highly non-ideal scenario as the accumulation of said species leads to flow assurance issues, especially with long-term processes like deposition. Since an ever-increasing amount of material is deposited in place at the pipe surface, production stoppage or active mitigation efforts become inevitable. The latter production issues result in increased safety risks and operational expenditures. Therefore, a cost-effective, passive deposition mitigation technology, such as a pipeline coating or surface treatment is especially appealing. The ability to address multiple pipeline flow assurance issues simultaneously without actively disrupting production would represent a dramatic step forward in this area. This study is part of a long-term ongoing effort that evaluates the performance and application of an omniphobic surface treatment for solids deposition prevention in industrially relevant systems. In particular, this specific work concentrates on the efficacy and robustness of the treatment under fully flowing conditions. The apparatuses utilized for this include two flowloops: a lab-scale, high-pressure flowloop for gas hydrate and surface treatment durability studies, and a bench-scale, atmospheric pressure loop for crude oil and asphaltene experiments. Film growth in high-pressure flowloop tests corroborated previous reports of delayed gas hydrate nucleation observed in rocking cells. Without the aid of the memory effect, treated oil-dominated experiments never experienced hydrate formation, spending upwards of a week in the hydrate stability zone (at the subcooled/fluid test conditions). Subsequent tests which utilized the memory effect then revealed that the hydrate formation rate reduced in the presence of the surface treatment compared to a bare stainless-steel surface. This testing was part of a larger set of trials conducted in the flowloop, which lasted about one year. The surface treatment durability under flowing conditions was evaluated during this time. Even after experiencing ∼4000 operating hours and 2 full pressure cycles, no evidence of delamination or damage was detected. Finally, as part of an extension to previous work, corroded surface asphaltene deposition experiments were performed in a bench-top flowloop. Treated experiments displayed an order of magnitude reduction in both total oil (all fractions of crude oil) and asphaltene fraction deposited.

03 NATURAL GAS↗
DOE OSTI2025

Anodized Aluminum Oxide Membrane Ionic Memristors

Memory effect in ion transport (IT) at the solid–solution interface is uniquely attractive in that the conductance depends on or “memorizes” the previous states. Hysteretic and rectified transport properties offer exciting potential to developing advanced iontronics and neuromorphic functions, improving the efficiency of energy conversion and electrochemical processes, and overcoming the selectivity-throughput bottleneck in the enrichment of low abundant species for environment- and energy-friendly separations, among others. Herein, memory effects are discovered in the rectified electrokinetic IT through anodized aluminum oxide (AAO) membranes containing densely packed highly ordered nanochannels (10 10 per cm 2 ). Characteristic memristor responses of pinched current–potential loops are resolved in voltammetric experiments and successfully reproduced through finite element simulation. Excitatory and inhibitory conductance states are shown to arise from the enrichment and depletion of mobile charge carriers. Structurewise, the transport symmetry is broken by the barrier oxide layer (BOL) on the one end of the cylindrical nanochannels across the AAO membranes. Charge selectivity is attributed to the gradient(s) of the space charge density across the BOL characterized by depth profiling via X-ray photoelectron spectroscopy analysis. The space charge gradient(s) overcomes the fundamental limitation of widely exploited surface charge effects to enable intense rectification and hysteresis prevailing at very high ionic concentrations up to 1–2 M. A new strategy is developed for controlling the preferential IT direction and selectivity via counterion intercalation and extraction/exchange. Mechanistic understanding is further confirmed through parameter variations such as potential scan rate and ionic strength, which also demonstrates convenient controls of the related functions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Suppressing heating rate-dependent martensitic stabilization in ductile Cu-Al-Mn shape memory alloys by Ni addition: An experimental and first-principles study

Highlights: • Additional nearest neighbor bond between Ni and Al atoms was produced theoretically in the Cu-Al-Mn-Ni (Ni≤2 at.%) alloys. • Shape memory effect of Cu-Al-Mn alloys heated at 20 K/min was improved from 85% to 92% after the addition of 2 at.% Ni. • Addition of 2 at.% Ni can suppress heating rate-dependent martensitic stabilization in Cu-Al-Mn alloys heated at 0.01 K/min. - Abstract: The present paper aims to suppress the heating rate-dependent martensitic stabilization of ductile Cu-Al-Mn shape memory alloys through restricting the mobility and thus the behavior of vacancies. A combined study based on first-principles calculation and experimental results were presented to unveil the effect of Ni addition into ternary Cu-Al-Mn alloys on the bonding force between atoms. The results showed that additional nearest neighbor bond between Ni and Al atoms in quaternary Cu-Al-Mn-Ni alloys can be produced. The addition of Ni (≤2 at.%) into ternary Cu-Al-Mn alloys can not only efficiently increase the shape memory effect, but also suppress the occurrence of heating rate-dependent martensitic stabilization. The addition of 2 at.% Ni improved the shape memory effect of ternary Cu-Al-Mn alloys from 85% to 92% when heated at 20 k/min. The shape memory effect of ternary Cu-Al-Mn alloys dropped to 10% as the heating rate decreased to 1 K/min, but it remain at 92% even when the heating rate was sufficiently lowered to 0.01 K/min after the addition of 2 at.% Ni.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structure of oxides prepared by decomposition of layered double Mg–Al and Ni–Al hydroxides

Abstracts: Thermal decomposition of Mg–Al and Ni–Al layered double hydroxides LDH at temperatures lower than 800 °C leads to the formation of oxides with different structures. Mg–Al oxide has a very defective structure and consists of octahedral layers as in periclase MgO and mixed octahedral–tetrahedral layers as in spinel MgAl{sub 2}O{sub 4}. Mixed Ni–Al oxide has a sandwich-like structure, consisting of a core with Al-doped NiO-like structure and some surface layers with spinel NiAl{sub 2}O{sub 4} structure epitaxial connected with the core. Suggested models were verified by simulation of X-ray diffraction patterns using DIFFaX code, as well as HRTEM, IR-, UV-spectroscopies, and XPS. - Graphical abstract: In the Mg–Al layered double hydroxide Al{sup 3+} ions migrate into interlayers during decomposition. The Mg–Al oxide represents sequence of octahedral and octahedral–tetrahedral spinel layers with vacancies. The Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers as a result of migration of Al{sup 3+} ions on the surface. The models explain the presence and absence of “memory effect” for the Mg–Al and Ni–Al oxides, respectively. - Highlights: • We study products of Mg(Ni)–Al LDH decomposition by calcination at 500(400)–800 °C. • In Mg–Al/Ni–Al LDH Al ions migrate into interlayers/on the surface during decomposition. • Mg–Al oxide represents sequence of periclase- and spinel-like layers with vacancies. • Ni–Al oxide has a sandwich-like structure with NiO-like core and surface spinel layers. • The models explain the presence/absence of “memory effect” for Mg–Al/Ni–Al oxides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Diagnosing and Destroying Non-Markovian Noise

Nearly every protocol used to analyze the performance of quantum information processors is based on an assumption that the errors experienced by the device during logical operations are constant in time and are insensitive to external contexts. This assumption is pervasive, rarely stated, and almost always wrong. Quantum devices that do behave this way are termed "Markovian:' but nearly every system we have ever probed has displayed drift or crosstalk or memory effects they are all non-Markovian. Strong non-Markovianity introduces spurious effects in characterization protocols and violates assumptions of the fault-tolerance threshold theorems. This SAND report details a three year laboratory-directed research and development (LDRD) project entitled, "Diagnosing and Destroying non-Markovian Noise in Quantum Information Processors." This program was initiated to build tools to study non-Markovian dynamics and quantum systems and develop robust methodologies for eliminating it. The program achieved a number of notable successes, including the first statistically rigorous protocol for identifying and characterizing drift in quantum systems, a formalism for modeling memory effects in quantum devices, and the successful suppression of drift in a Sandia trapped-ion quantum processor.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Kondo enabled transmutation between spinons and superconducting vortices: Origin of magnetic memory in 4 H b − TaS 2

Recent experiments [Persky , ] demonstrate a magnetic memory effect in 4 H b − TaS 2 above its superconducting transition temperature, where Abriokosov vortices are spontaneously generated by lowering the temperature at zero magnetic field after field training the normal state. Motivated by the experiment, we propose the chiral quantum spin liquid (QSL) stabilized in the constituent layers of 4 H b − TaS 2 as a mechanism. We model 4 H b − TaS 2 as coupled layers of the chiral QSL and the superconductor. Through the Kondo coupling between the localized moments and conduction electrons, there is mutual transmutation between spinons and vortices during the thermal-cycling process, which yields the magnetic memory effect observed in experiments. We also propose a mechanism to stabilize chiral and nematic superconductivity in 4 H b − TaS 2 through the Kondo coupling of conduction electrons to the chiral QSL. Our picture suggests 4 H b − TaS 2 as an exciting platform to explore the interplay between QSL and superconductivity through the Kondo effect. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

How to describe collective decay of uncoupled modes in the input–output formalism

We extend the input–output formalism to study the behavior of uncoupled discrete modes (bosonic cavity modes and fermionic qubits) when they decay to the same Markovian continuum. When the continuum interacts with only a single mode, this decay is irreversible. However, when multiple modes decay to the same Markovian continuum they develop correlations and decay collectively. In the input–output formalism these correlations manifest in additional terms in the quantum Langevin equation. For two modes, this collective decay can dramatically extend the lifetimes of both modes (Dicke subradiance) and, within the single-mode subsystem, induces non-Markovian memory effects including energy backflow.

Propp, Tzula B. (ORCID:0000000277481434)↗
DOE OSTI2022

A stilbene–strontium iodide based radioxenon detection system for monitoring nuclear explosions

Atmospheric measurement of noble gases has been extensively used for monitoring clandestine nuclear weapon explosions for many years. The ratios of four xenon isotopes of interest ( 131 mXe, 133 mXe, 133 Xe, and 135 Xe) help in discriminating regular reactor operations from nuclear tests. A new coincidence-based detection system using stilbene and strontium iodide [SrI 2 (Eu)] for electron and photon detection respectively was developed at Oregon State University to address some of the challenges of the radioxenon systems deployed in the field such as memory effect, and poor energy resolution. Silicon photomultipliers (SiPMs) were used for sensing optical photons from all scintillation media. Real-time coincidence identification was achieved using the eight-channel digital pulse processor. The detection system was evaluated using lab check sources and Oregon State TRIGA reactor irradiated radioxenon samples. A 48-hour background coincidence spectrum was collected yielding a coincidence count rate and background rejection rate of 0.0174 ± 0.0003 counts per second (cps) and 98.9% respectively. The minimum detectable concentration (MDC) of the system was evaluated to be 0.11 ± 0.01, 0.13 ± 0.02, 0.20 ± 0.02, and 0.73 ± 0.08 for 131 mXe, 133 mXe, 133 Xe, and 135 Xe respectively. The memory effect of the detection system was found to be 0.069 ± 0.015%, which is almost a 70-fold reduction compared to traditional plastic scintillators. Here, the detection elements, custom-designed electronics, and the detector response to radioxenon are detailed in this work.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

A PIPS + SrI 2 (Eu) detector for atmospheric radioxenon monitoring

The PIPS–SrI 2 (Eu) is a prototype atmospheric radioxenon detection system designed at Oregon State University in support of international efforts towards monitoring clandestine nuclear weapon testing activities. This detector aims to address some shortcomings found in currently deployed beta–gamma atmospheric radioxenon detection systems, such as lackluster energy resolution and memory effect, by employing modern detection materials and readout. The system uses a PIPSBox, a silicon-based gas cell, for electron detection, and a pair of ultrabright, D-shaped SrI 2 (Eu) scintillators coupled to silicon photomultipliers for photon detection. A custom eight-channel digital pulse processor equipped with a field programmable gate-array (FPGA) identifies electron–photon coincidences between the volumes in near real-time. Gas samples of the four radioxenon isotopes of interest were independently measured with the PIPS–SrI 2 (Eu) detection system to determine energy resolution and efficiency. Application of FPGA-based coincidence discrimination in near real-time reduced the ambient background count rate by 95.85 ± 0.04%. Using parameters from the Xenon International gas processing unit and assuming a blank sample and zero memory effect the minimum detectable concentrations (MDCs) for the isotopes were calculated to be 0.12 ± 0.03, 0.27 ± 0.05, 0.15 ± 0.02, and 1.00 ± 0.08 mBq/m 3 air for 131m Xe, 133 Xe, 133m Xe, and 135 Xe, respectively. These MDC estimates compare well with other radioxenon detection systems employed in the International Monitoring System (IMS) and indicate that the PIPS–SrI 2 (Eu) is in compliance with the Comprehensive Nuclear Test-Ban-Treaty Organization (CTBTO) sensitivity requirement of ≤ 1 mBq/m 3 for 133 Xe.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2019

Evaluation of a semiconductor-based atmospheric radioxenon detection system

A prototype radioxenon detection system for beta–gamma coincidence measurements has been designed using a PIPSBox and a pair of coplanar CdZnTe (CZT) detectors. Coincidence events are identified in real-time using a Field-Programmable Gate Array (FPGA). The measurement of 131m Xe and studies on electron backscatter and memory effect in the PIPSBox have been presented previously; this paper details the measurement of 133/133m Xe, 135 Xe, and background. Here, absolute efficiencies were determined, regions of interest were defined, and Minimum Detectable Concentrations (MDC) for all four radioxenon isotopes were calculated. When neglecting interferences between the radioxenons, the prototype system has an estimated MDC of 0.61 ± 0.15 mBq/m 3 for 133 Xe when using gas processing parameters associated with Xenon International, satisfying the CTBTO requirement for sensitivity of ≤1 mBq/m 3 for 133 Xe. Simulation suggests that by increasing number of CZT detectors used by a factor of 16, the MDCs of the system can be improved by a factor of 2-3. The design shows great promise for future improvement and expansion due to its exceptional energy resolution, high background rejection rate, room temperature operation, minimal memory effect, and simple readout electronics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Anomalous magnetic noise in an imperfectly flat landscape in the topological magnet Dy 2 Ti 2 O 7

Noise generated by motion of charge and spin provides a unique window into materials at the atomic scale. From temperature of resistors to electrons breaking into fractional quasiparticles, “listening” to the noise spectrum is a powerful way to decode underlying dynamics. Here, we use ultrasensitive superconducting quantum interference device (SQUIDs) to probe the puzzling noise in a frustrated magnet, the spin-ice compound Dy 2 Ti 2 O 7 (DTO), revealing cooperative and memory effects. DTO is a topological magnet in three dimensions—characterized by emergent magnetostatics and telltale fractionalized magnetic monopole quasiparticles—whose real-time dynamical properties have been an enigma from the very beginning. We show that DTO exhibits highly anomalous noise spectra, differing significantly from the expected Brownian noise of monopole random walks, in three qualitatively different regimes: equilibrium spin ice, a “frozen” regime extending to ultralow temperatures, and a high-temperature “anomalous” paramagnet. We present several distinct mechanisms that give rise to varied colored noise spectra. In addition, we identify the structure of the local spin-flip dynamics as a crucial ingredient for any modeling. Thus, the dynamics of spin ice reflects the interplay of local dynamics with emergent topological degrees of freedom and a frustration-generated imperfectly flat energy landscape, and as such, it points to intriguing cooperative and memory effects for a broad class of magnetic materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Initial transient stage of pin-to-pin nanosecond repetitively pulsed discharges in air

In this work, evolution of parameters of nanosecond repetitively pulsed (NRP) discharges in pin-to-pin configuration in air was studied during the transient stage of initial 20 discharge pulses. Gas and plasma parameters in the discharge gap were measured using coherent microwave scattering, optical emission spectroscopy, and laser Rayleigh scattering for NRP discharges at repetition frequencies of 1, 10, and 100 kHz. Memory effects (when perturbations induced by the previous discharge pulse would not decay fully until the subsequent pulse) were detected for the repetition frequencies of 10 and 100 kHz. For 10 kHz NRP discharge, the discharge parameters experienced significant change after the first pulse and continued to substantially fluctuate between subsequent pulses due to rapid evolution of gas density and temperature during the 100 μs inter-pulse time caused by intense redistribution of the flow field in the gap on that time scale. For 100 kHz NRP discharge, the discharge pulse parameters reached a new steady-state at about five pulses after initiation. Further, this new steady-state was associated with well-reproducible parameters between the discharge pulses and substantial reduction in breakdown voltage, discharge pulse energy, and electron number density in comparison to the first discharge pulse. For repetition frequencies 1–100 kHz considered in this work, the memory effects can be likely attributed to the reduction in gas number density and increase in the gas temperature that cannot fully recover to ambient conditions before subsequent discharge pulses.

42 ENGINEERING↗
DOE OSTI2018

Influence of high energy ball milling on structural parameters, cation distribution and magnetic enhancement of nanosized Co0.3Zn0.7Fe2O4

Highlights: • Magnetic enhancement in mechanically activated nanosized Co{sub 0.3}Zn{sub 0.7}Fe{sub 2}O{sub 4} ferites. • Influence of crystal structure, cation distribution and stress anisotropy on magnetic and hyperfine properties. • A simple method for estimation of cation distribution of ferrites has been proposed. • Probing core-shell type magnetic structure of ferrite nanoparticles by infield Mössbauer and dc magnetic measurement. • Memory effect in the dc magnetization. - Abstract: Herein, we report the role of mechanical activation in modifying the structural, microstructural, magnetic and hyperfine parameters of nanosized Co{sub 0.3}Zn{sub 0.7}Fe{sub 2}O{sub 4} having average particle size ∼16.6 nm synthesized via coprecipitation method followed by high energy ball milling with cation distribution (Zn{sup 2+}{sub 0.61}Fe{sup 3+}{sub 0.39}){sub A} [Co{sup 2+}{sub 0.3}Zn{sup 2+}{sub 0.09}Fe{sup 3+}{sub 1.61}]{sub B}O{sub 4}. The values of the blocking temperature and Curie temperature of the sample are 220 and 270 K, respectively. The values of saturation magnetization at 300 and 5 K are 59 and 88 emu g{sup −1}and those of the coercivity at 100 and 5 K are 400 and 5000 Oe, respectively. The values of the magnetic parameters of the sample are greater than those of its counterparts synthesized by chemical methods. A model for precise estimation of the cation distribution of ferrites has been proposed. Moreover, the memory effect obtained in the dc magnetization of the sample can be used for generating, storing and retrieving binary bit pattern.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of phase transformation on the microstructures and magnetostriction of Fe-Ga and Fe-Ga-Zn ferromagnetic shape memory alloys

The phase transformation and magnetostriction of bulk Fe{sub 73}Ga{sub 27} and Fe{sub 73}Ga{sub 18}Zn{sub 9} (at. %) ferromagnetic shape memory alloys (FSMs) were investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD), and a magnetostrictive-meter setup. For the Fe{sub 73}Ga{sub 27} FSM alloy solution treated at 1100 °C for 4 h and quenched in ice brine, the antiphase boundary segments of the D0{sub 3} domain were observed in the A2 (disordered) matrix, and the Fe{sub 73}Ga{sub 27} FSM alloy had an optimal magnetostriction (λ{sub ‖}{sup s }= 71 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). In Fe{sub 73}Ga{sub 27} FSM alloy as-quenched, aged at 700 °C for 24 h, and furnace cooled, D0{sub 3} nanoclusters underwent phase transformation to an intermediate tetragonal phase (i.e., L1{sub 0}-like martensite) via Bain distortion, and finally L1{sub 2} (Fe{sub 3}Ga) structures precipitated, as observed by TEM and XRD. The L1{sub 0}-like martensite and L1{sub 2} phases in the aged Fe{sub 73}Ga{sub 27} FSM alloy drastically decreased the magnetostriction from positive to negative (λ{sub ‖}{sup s }= −20 × 10{sup −6} and λ{sub ⊥}{sup s }= −8 × 10{sup −6}). However, in Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy as-quenched and aged, the phase transformation of D0{sub 3} to an intermediate tetragonal martensite phase and precipitation of L1{sub 2} structures were not found. The results indicate that the aged Fe{sub 73}Ga{sub 18}Zn{sub 9} FSM alloy maintained stable magnetostriction (λ{sub ‖}{sup s }= 36 × 10{sup −6} and λ{sub ⊥}{sup s }= −31 × 10{sup −6}). Adding Zn can improve the ferromagnetic shape memory effect of aged Fe{sub 73}Ga{sub 18}Zn{sub 9} alloy, which may be useful in application of the alloy in high temperature environments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Polarized photoluminescence of nc-Si–SiO{sub x} nanostructures

The effect of photoluminescence polarization memory in nc-Si–SiO{sub x} light-emitting structures containing Si nanoparticles (nc-Si) in an oxide matrix is for the first time studied. The polarization properties of continuous and porous nanostructures passivated in HF vapors (or solutions) are studied. It is established that the polarization memory effect is manifested only after treatment of the structures in HF. The effect is also accompanied by a shift of the photoluminescence peak to shorter wavelengths and by a substantial increase in the photoluminescence intensity. It is found that, in anisotropic nc-Si–SiO{sub x} samples produced by oblique deposition in vacuum, the degree of linear photoluminescence polarization in the sample plane exhibits a noticeable orientation dependence and correlates with the orientation of SiO{sub x} nanocolumns forming the structure of the porous layer. These effects are attributed to the transformation of symmetrically shaped Si nanoparticles into asymmetric elongated nc-Si particles upon etching in HF. In continuous layers, nc-Si particles are oriented randomly, whereas in porous structures, their preferential orientation coincides with the orientation of oxide nanocolumns.

36 MATERIALS SCIENCE↗