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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Deployment of Autonomous GPS Stations in Marie Byrd Land, Antarctica

During the 1998-1999 Antarctic field season, we installed three autonomous GPS stations in Marie Byrd Land, West Antarctica to measure glacio-isostatic rebound and rates of spreading across the West Antarctic Rift System. The systems collect data throughout the entire year and therefore must function during the warm, relatively mild summer, and cold, harsh winters. They are powered by gel cell batteries that are charged by wind and solar power. The system includes dual data logging capability. We log data at 5 minute intervals within the receiver and at 30 second intervals to a serial data logger. We do not require 365 days of continuous data for well determined crustal velocities, but rather long periods (greater than 24 hours) of continuous data distributed throughout the year. Therefore, for simplicity, we designed the system to accept occasional data interruptions. The batteries, in addition to supplying power, act as a thermal capacitive heat storage device to help regulate the temperatures within the system. This storage system absorbs the majority of the 10-15 watts of power from the receiver and 5 watts from the data logger which helps to maintain temperature for long periods of time. Power is switched off when the temperature within the system enclosure reaches 50'C and is reconnected at 20 C. If battery voltage drops too low the batteries will freeze. Therefore, we cut the power off when the batteries drop to a low voltage of 12.45V. Power is restored at 13.2V. The temperature and power hysteresis allows for a minimum of several days of data to be collected before system shutdowns. A check of all three stations in late January 1999 indicated that the thermal and power control systems are performing as expected. We plan to implement satellite telemetry to the systems during the 2000-2001 season following a year of development.

Donnellan, Andrea↗
NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗
NASA NTRS2003

Detection of High-impedance Arcing Faults in Radial Distribution DC Systems

High voltage, low current arcing faults in DC power systems have been researched at the NASA Glenn Research Center in order to develop a method for detecting these 'hidden faults', in-situ, before damage to cables and components from localized heating can occur. A simple arc generator was built and high-speed and low-speed monitoring of the voltage and current waveforms, respectively, has shown that these high impedance faults produce a significant increase in high frequency content in the DC bus voltage and low frequency content in the DC system current. Based on these observations, an algorithm was developed using a high-speed data acquisition system that was able to accurately detect high impedance arcing events induced in a single-line system based on the frequency content of the DC bus voltage or the system current. Next, a multi-line, radial distribution system was researched to see if the arc location could be determined through the voltage information when multiple 'detectors' are present in the system. It was shown that a small, passive LC filter was sufficient to reliably isolate the fault to a single line in a multi-line distribution system. Of course, no modification is necessary if only the current information is used to locate the arc. However, data shows that it might be necessary to monitor both the system current and bus voltage to improve the chances of detecting and locating high impedance arcing faults

Gonzalez, Marcelo C.↗
NASA NTRS2013

LVGEMS Time-of-Flight Mass Spectrometry on Satellites

NASA fs investigations of the upper atmosphere and ionosphere require measurements of composition of the neutral air and ions. NASA is able to undertake these observations, but the instruments currently in use have their limitations. NASA has extended the scope of its research in the atmosphere and now requires more measurements covering more of the atmosphere. Out of this need, NASA developed multipoint measurements using miniaturized satellites, also called nanosatellites (e.g., CubeSats), that require a new generation of spectrometers that can fit into a 4 ~4 in. (.10 ~10 cm) cross-section in the upgraded satellites. Overall, the new mass spectrometer required for the new depth of atmospheric research must fulfill a new level of low-voltage/low-power requirements, smaller size, and less risk of magnetic contamination. The Low-Voltage Gated Electrostatic Mass Spectrometer (LVGEMS) was developed to fulfill these requirements. The LVGEMS offers a new spectrometer that eliminates magnetic field issues associated with magnetic sector mass spectrometers, reduces power, and is about 1/10 the size of previous instruments. LVGEMS employs the time of flight (TOF) technique in the GEMS mass spectrometer previously developed. However, like any TOF mass spectrometer, GEMS requires a rectangular waveform of large voltage amplitude, exceeding 100 V -- that means that the voltage applied to one of the GEMS electrodes has to change from 0 to 100 V in a time of only a few nanoseconds. Such electronic speed requires more power than can be provided in a CubeSat. In the LVGEMS, the amplitude of the rectangular waveform is reduced to about 1 V, compatible with digital electronics supplies and requiring little power.

Herrero, Federico↗
NASA NTRS2004

Observation of Dust Stream Formation Produced by Low Current, High Voltage Cathode Spots

Macro-particle acceleration driven by low current, high voltage cathode spots has been investigated. The phenomenon was observed to occur when nanometer and micrometer-sized particles in the presence of a discharge plasma were exposed to a high voltage pulse. The negative voltage pulse initiates the formation of multiple, high voltage, low current cathode spots which provides the mechanism of actual acceleration of the charged dust particles. Dust streams generated by this process were detected using laser scattering techniques. The particle impact craters observed at the surface of downstream witness badges were documented using SEM and light microscopy.

Foster, John E.↗
NASA NTRS2010

Safety Limitations Associated with Commercial 18650 Lithium-ion Cells

In the past decade, NASA-JSC battery group has carried out several tests on the safety of li-ion cells, modules and battery packs. The hazards associated with using commercial li-ion cells in high voltage and high capacity batteries have been determined to be different from those associated with the use of the same cells in low voltage, low capacity packs (less than 15 V and 60 Wh). Tests carried out included overcharge, overdischarge, external and internal short circuits with destructive physical analysis included in most cases. Chemical analysis, X-rays and in some cases CT scans were used for post-test analysis.

Jeevarajan, Judith A.↗
NASA NTRS1989

High density associative memory

A multi-layered, thin-film, digital memory having associative recall. There is a first memory matrix and a second memory matrix. Each memory matrix comprises, a first layer comprising a plurality of electrically separated row conductors; a second layer comprising a plurality of electrically separated column conductors intersecting but electrically separated from the row conductors; and, a plurality of resistance elements electrically connected between the row condutors and the column conductors at respective intersections of the row conductors and the column conductors, each resistance element comprising, in series, a first resistor of sufficiently high ohmage to conduct a sensible element current therethrough with virtually no heat-generating power consumption when a low voltage as employed in thin-film applications is applied thereacross and a second resistor of sufficiently high ohmage to conduct no sensible current therethrough when a low voltage as employed in thin-film applications is applied thereacross, the second resistor having the quality of breaking down to create a short therethrough upon the application of a breakdown level voltage across the first and second resistors.

Moopenn, Alexander W.↗
NASA NTRS1995

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Menkara, H. M.↗
NASA NTRS1969

Millivolt signal limiter

Low-voltage limiter circuit suppresses the output of platinum probes at temperatures beyond their operating range. The limiter circuit comprises an operational amplifier with a dual feedback loop. The signal limiter is useful in low-voltage instrumentation circuits normally operable or set for cryogenic temperatures.

Hansen, I. G.↗
NASA NTRS2010

Performance and Safety Tests of Lithium-Ion Cells Arranged in a Matrix Design Configuration

Matrix Packs display large variations in cell bank voltages at the charge and discharge current (C/2) used in this test program. The voltage difference is larger at the end of discharge than at the end of charge under the conditions studied. Disconnection of a cell from the pack leads to a larger voltage difference during discharge (greater than 2.0 V) between the bank that has one less cell and the other banks. Thermal profile does not show any significant changes or increase in temperature after one cell was disconnected from the bank in spite of falling to very low voltages at the end of discharge. All tests on the matrix pack with the HAM displayed lower max in general due to the placement of thermocouple on the outside of the HAM rather than on the cells. Disconnection of cells has almost no influence on the performance of the packs and does not show any abnormal thermal changes for the 100 cycles obtained in this test program. Longer cycle life may influence the performance especially if the low voltage cell goes into reversal. Overcharge leads to CID activation of cells. If the matrix configuration has a larger number of cells in series, (more than 5 S configuration), the limitations of protective devices may manifest itself irrespective of it being in a matrix configuration. External short circuit causes a fire with expulsion of content from some cells. The fire does not propagate itself laterally, but if there was cell module stacking, then the fire would cause the cells above it to also go into flames/thermal runaway. Limitations of protective devices are observed in this case as the PTCs in the cells did not protect under this abusive condition. Matrix configurations seem to provide protection against lateral propagation of fire and flame. Matrix pack configuration seems to provide good performance in spite of losing cell connections; at least for the configuration tested under this program.

Jeevarajan, Judith↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗
NASA NTRS1981

Direct current ballast circuit for metal halide lamp

A direct current ballast circuit for a two electrode metal halide lamp is described. Said direct current ballast circuit includes a low voltage DC input and a high frequency power amplifier and power transformer for developing a high voltage output. The output voltage is rectified by diodes and filtered by inductor and capacitor to provide a regulated DC output through commutating diodes to one terminal of the lamp at the output terminal. A feedback path from the output of the filter capacitor through the bias resistor to power the high frequency circuit which includes the power amplifier and the power transformer for sustaining circuit operations during low voltage transients on the input DC supply is described. A current sensor connected to the output of the lamp through terminal for stabilizing lamp current following breakdown of the lamp is described.

Lutus, P.↗
NASA NTRS2012

Lunar Reconnaissance Orbiter (LRO) Command and Data Handling Flight Electronics Subsystem

A document describes a high-performance, modular, and state-of-the-art Command and Data Handling (C&DH) system developed for use on the Lunar Reconnaissance Orbiter (LRO) mission. This system implements a complete hardware C&DH subsystem in a single chassis enclosure that includes a processor card, 48 Gbytes of solid-state recorder memory, data buses including MIL-STD-1553B, custom RS-422, SpaceWire, analog collection, switched power services, and interfaces to the Ka-Band and S-Band RF communications systems. The C&DH team capitalized on extensive experience with hardware and software with PCI bus design, SpaceWire networking, Actel FPGA design, digital flight design techniques, and the use of VxWorks for the real-time operating system. The resulting hardware architecture was implemented to meet the LRO mission requirements. The C&DH comprises an enclosure, a backplane, a low-voltage power converter, a single-board computer, a communications interface board, four data storage boards, a housekeeping and digital input/output board, and an analog data acquisition board. The interfaces between the C&DH and the instruments and avionics are connected through a SpaceWire network, a MIL-STD-1553 bus, and a combination of synchronous and asynchronous serial data transfers over RS-422 and LVDS (low-voltage differential-signaling) electrical interfaces. The C&DH acts as the spacecraft data system with an instrument data manager providing all software and internal bus scheduling, ingestion of science data, distribution of commands, and performing science operations in real time.

Nguyen, Quang↗
NASA NTRS1993

A sub-cm micromachined electron microscope

A new approach for fabricating macroscopic (approximately 10x10x10 mm(exp 3)) structures with micron accuracy has been developed. This approach combines the precision of semiconductor processing and fiber optic technologies. A (100) silicon wafer is anisotropically etched to create four orthogonal v-grooves and an aperture on each 10x12 mm die. Precision 308 micron optical fibers are sandwiched between the die to align the v-grooves. The fiber is then anodically bonded to the die above and below it. This procedure is repeated to create thick structures and a stack of 5 or 6 die will be used to create a miniature scanning electron microscope (MSEM). Two die in the structure will have a segmented electrode to deflect the beam and correct for astigmatism. The entire structure is UHV compatible. The performance of an SEM improves as its length is reduced and a sub-cm 2 keV MSEM with a field emission source should have approximately 1 nm resolution. A low voltage high resolution MSEM would be useful for the examination of biological specimens and semiconductors with a minimum of damage. The first MSEM will be tested with existing 6 micron thermionic sources. In the future a micromachined field emission source will be used. The stacking technology presented in this paper can produce an array of MSEMs 1 to 30 mm in length with a 1 mm or larger period. A key question being addressed by this research is the optimum size for a low voltage MSEM which will be determined by the required spatial resolution, field of view, and working distance.

Feinerman, A. D.↗
NASA NTRS1977

Design, fabrication, and evaluation of charge-coupled devices with aluminum-anodized-aluminum gates

A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.

Gassaway, J. D.↗
NASA NTRS1964

Blocking oscillator uses low triggering voltage

To prevent premature triggering of a blocking oscillator, a smaller magnetic core is added to the conventional oscillator circuit. This serves as a second blocking oscillator and has a lower triggering threshold.

Source record↗
NASA NTRS1964

Efficient circuit triggers high-current, high-voltage pulses

Modified circuit uses diodes to effectively disconnect the charging resistors from the circuit during the discharge cycle. Result is an efficient parallel charging, high voltage pulse modulator with low voltage rating of components.

Green, E. D.↗