Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “leakage current”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1981

Gallium phosphide high temperature diodes

High temperature (300 C) diodes for geothermal and other energy applications were developed. A comparison of reverse leakage currents of Si, GaAs, and GaP was made. Diodes made from GaP should be usable to 500 C. A Liquid Phase Epitaxy (LPE) process for producing high quality, grown junction GaP diodes is described. This process uses low vapor pressure Mg as a dopant which allows multiple boat growth in the same LPE run. These LPE wafers were cut into die and metallized to make the diodes. These diodes produce leakage currents below ten to the -9th power A/sq cm at 400 C while exhibiting good high temperature rectification characteristics. High temperature life test data is presented which shows exceptional stability of the V-I characteristics.

Chaffin, R. J.↗
NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗
NASA NTRS2004

Asymmetrical Capacitors for Propulsion

Asymmetrical Capacitor Thrusters have been proposed as a source of propulsion. For over eighty years, it has been known that a thrust results when a high voltage is placed across an asymmetrical capacitor, when that voltage causes a leakage current to flow. However, there is surprisingly little experimental or theoretical data explaining this effect. This paper reports on the results of tests of several Asymmetrical Capacitor Thrusters (ACTs). The thrust they produce has been measured for various voltages, polarities, and ground configurations and their radiation in the VHF range has been recorded. These tests were performed at atmospheric pressure and at various reduced pressures. A simple model for the thrust was developed. The model assumed the thrust was due to electrostatic forces on the leakage current flowing across the capacitor. It was further assumed that this current involves charged ions which undergo multiple collisions with air. These collisions transfer momentum. All of the measured data was consistent with this model. Many configurations were tested, and the results suggest general design principles for ACTs to be used for a variety of purposes.

Canning, Francis X.↗
DOE OSTI2020

Investigation of the electrical conduction mechanisms in P-type amorphous germanium electrical contacts for germanium detectors in searching for rare-event physics

For the first time, electrical conduction mechanisms in the disordered material system is experimentally studied for p-type amorphous germanium (a-Ge) used for high-purity Ge detector contacts. The localization length and the hopping parameters in a-Ge are determined using the surface leakage current measured from three high-purity planar Ge detectors. The temperature dependent hopping distance and hopping energy are obtained for a-Ge fabricated as the electrical contact materials for high-purity Ge planar detectors. As a result, we find that the hopping energy in a-Ge increases as temperature increases while the hopping distance in a-Ge decreases as temperature increases. The localization length of a-Ge is on the order of 2.13$^{-0.05}_{+0.07}$A° to 5.07$^{0.83}_{+2.58}$A°,depending on the density of states near the Fermi energy level within bandgap. Using these parameters, we predict that the surface leakage current from a Ge detector with a-Ge contacts can be much smaller than one yocto amp (yA) at helium temperature, suitable for rare-event physics searches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Evaluation of HPK n + - p planar pixel sensors for the CMS Phase-2 upgrade

To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 × 10 34 cm –2 s –1 in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionizing energy loss of up to $\Phi_{\text {eq}}$ = 3.5 × 10 16 cm –2 . Here this paper focuses on planar pixel sensor design and qualification up to a fluence of $\Phi_{\text {eq}}$ = 1.4 × 10 16 cm –2 . For the development of appropriate planar pixel sensors an R&D program was initiated, which includes $n^+ -p$ sensors on 150 mm (6”) wafers with an active thickness of 150 μm with pixel sizes of 100 × 25 μm 2 and 50 × 50 μm 2 manufactured by Hamamatsu. Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50 × 50 μm 2 pixels is measured as 4.0 μm for non-irradiated samples, and 6.3 μm after irradiation to $\Phi_{\text {eq}}$ = 7.2 × 10 15 cm –2 .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1972

Junction characteristics of silicon solar cells. Part 1: Nonilluminated case

Precise values of the reverse saturation currents in silicon solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell. The diffusion lengths calculated from the diffusion current components agree well with diffusion lengths measured independently in similar material. Models are given demonstrating the effect of recombination and shunting currents on the dark current-voltage characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS1972

Junction characteristics of silicon solar cells.

Precise values of the reverse saturation currents in solar cells and magnitudes of the diffusion and recombination components have been obtained. The recombination current as well as leakage current due to shunting are shown to be nonuniform across the cell and to be responsible for up to 30% loss in efficiency for the average cell in a Jupiter-type environment. Models are given demonstrating the effect of recombination and shunting currents on dark and light characteristics of solar cells.

Stirn, R. J.↗
NASA NTRS2021

Breakdown and Self-healing in Tantalum Capacitors

Reliability of tantalum capacitors depends on the efficiency of self-healing that restores parts after breakdown. In this work, different types of polymer and MnO2 cathode capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of amplitudes and duration of current spikes. Monitoring of leakage currents with time under bias is used to assess the effect of scintillations. The appearance and composition of damaged sites have been examined after deprocessing and cross-sectioning. Thermal processes during scintillations have been analyzed, a mechanism of breakdown based on growth of conductive filaments in the dielectric suggested, and self-healing processes in polymer and MnO2 cathode capacitors discussed.

tantalum capacitor↗
NASA NTRSDate not supplied

Degradation of Aluminum and Tantalum Wet Electrolytic Capacitors during High Temperature Storage

Aluminum electrolytic capacitors (AEC) are available to higher ranges of capacitance and voltage compared to tantalum electrolytic capacitors (TEC). However, evaporation of the electrolyte during operation or storage of conventional AEC that is accelerated with temperature does not allow use of these parts in space electronics. Instead, for systems requiring large value capacitors and high operating voltages, designers must use banks of TECs that increases substantially the size and weight of electronic modules. Development of hermetically sealed AECs might be beneficial for space systems provided the necessary reliability is assured. Increase in leakage current during storage of AEC is well known and is often explained by dissolution of aluminum oxide in electrolyte. However, other possible mechanisms of this effect have not been discussed. Although hermetically sealed TEC have been used in space systems for years, there is a lack of information about the effects of storage on their characteristics that is of great interest as a comparison for aluminum capacitors. This work explores degradation of AC characteristics (capacitance, dissipation factor, and equivalent series resistance) and DC characteristics (leakage and absorption currents) in different types of aluminum and tantalum hermetically sealed capacitors during long-term storage at high temperatures (100 °C, 125 °C, and 150 °C). It is shown that leakage currents are degrading in both types of capacitors, but this degradation is reversible after bias application. Mechanisms of degradation are discussed, and explanations based on the processes common for both types of capacitors are suggested. Problems associated with assessments of hermeticity and evaporation of the electrolyte in hermetically sealed capacitors are analyzed.

Alexander Teverovsky↗
DOE OSTI2021

Defect characterization and charge transport measurements in high-resolution Ni/n-4H-SiC Schottky barrier radiation detectors fabricated on 250 μ m epitaxial layers

Advances in the growth processes of 4H-SiC epitaxial layers have led to the continued expansion of epilayer thickness, allowing for the detection of more penetrative radioactive particles. In this work, we report the fabrication and characterization of high-resolution Schottky barrier radiation detectors on 250 μm thick n-type 4H-SiC epitaxial layers, the highest reported thickness to date. Several 8 × 8 mm 2 detectors were fabricated from a diced 100 mm diameter 4H-SiC epitaxial wafer grown on a conductive 4H-SiC substrate with a mean micropipe density of 0.11 cm -2 From the Mott–Schottky plots, the effective doping concentration was found to be in the range (0.95–1.85) × 10 14 cm -3 , implying that full depletion could be achieved at ~5.7 kV (0.5 MV/cm at the interface). The current-voltage characteristics demonstrated consistently low leakage current densities of 1–3 nA/cm 2 at a reverse bias of -800 V. This resulted in the pulse-height spectra generated using a 241Am alpha source (5486 keV) manifesting an energy resolution of less than 0.5% full width at half maximum (FWHM) for all the detectors at -200 V. The charge collection efficiencies (CCEs) were measured to be 98–99% with no discernable correlation to the energy resolution. A drift-diffusion model fit to the variation of CCE as a function of bias voltage, revealed a minority carrier diffusion length of ~10 μm. Deep level transient spectroscopy measurements on the best resolution detector revealed that the excellent performance was the result of having ultralow concentrations of the order of 1011 cm-3 lifetime limiting defects—Z 1/2 and EH 6/7 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1971

Voltage regulator dissipates minimal power and functions as a voltage divider

Regulator requires minimum amount of power for voltage division and it is not required continuously. The only power loss, except for regulating purposes, is that needed to provide for imbalances in load current requirements. For balanced loads, only leakage current flows through regulating transistors.

Hester, H. B.↗
NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗
NASA NTRSDate not supplied

Stress Testing of Chip Aluminum Polymer Capacitors

Layered aluminum polymer capacitors (APC) may be viable replacements to current chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect on humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. In this work, seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were used to evaluate reliability of the parts under environmental stresses and highly accelerated life tests. Characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been analyzed and compared to polymer tantalum capacitors.

Alexander Teverovsky↗
NASA NTRS2024

Evaluation of Aluminum Polymer Capacitors for Space Applications

Layered aluminum polymer capacitors (APC) may be viable replacements to currently used chip tantalum capacitors due to their lower ESR, weight, and smaller size. So far, there is a lack of information regarding the reliability of these parts. Available technical literature is mostly related to the effect of humidity. Although APCs have a limited moisture resistance, it may be contained to the level sufficient for space applications. This work analyzes construction and characteristics of seven types of commercial APCs manufactured by four vendors and rated to voltages from 6.3 to 35 V were analyzed. Their reliability under environmental stresses and highly accelerated life tests was assessed in the range of temperatures and voltages to determine reliability acceleration factors. For this purpose, characteristics of the parts, including breakdown voltages, the level of anomalous charging currents (ACC), capacitance, DF, ESR and leakage currents were measured in the process of storage at high-temperatures (from 100 to 150 °C) and high humidity at 85 °C. Monitored highly accelerated life tests have been carried out at temperatures of 85 °C and 125 °C and voltages varying from 1.2 to 1.9 times the rated voltage. Degradation processes and reliability of APCs have been compared to polymer tantalum capacitors.

Alexander A Teverovsky↗
DOE OSTI2023

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗