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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Dislocation dissociation in some f.c.c. metals

The dissociation of a perfect screw dislocation into a stacking fault in an f.c.c. lattice is modeled by the modified lattice statics. The interatomic potentials are obtained from the work of Esterling and Swaroop and differ substantially from those empirical potentials usually employed in defect simulations. The calculated stacking fault widths for aluminum, copper, and silver are in good agreement with weak beam microscopy results.

Esterling, D. M.↗
NASA NTRS1971

Composition stability limits for the rocksalt-structure phase /Pb1-y Sny/1-xTex from lattice parameter measurements.

The parameter values measured are in agreement with those reported by Mazelsky and Lubell (1963) and data of Bis and Dixon (1969). The measurements for SnTe introduce a large amount of data into a defect model analysis that shows that the ratio of the number of holes per tin-vacancy acceptor to the 77 K Hall factor is independent of the apparent hole concentration. The measurements reveal some interesting problems in handling the Sn-rich alloys in fine powder form due to the uptake of oxygen.

Brebrick, R. F.↗
NASA NTRS1988

High temperature thermal conductivity measurements on lanthanum sulfides using the flash method

In the past, high temperature specific heat and hence thermal conductivity measurements, using the flash method have not been very accurate. This is due to the difficulty of exactly determining the amount of heat deposited on the front face of a sample during each flash. This problem has now been solved by sputtering a thin layer of graphite on the standard reference and test samples. Data taken shows that the amount of heat deposited can now be determined to within about 2 percent resulting in more accurate thermal conductivity data. The results of measurements on several lanthanum sulfides with stoichiometries between LaS(1.35) and LaS(1.48) are reported and show a minimum in the lattice thermal conductivity at a composition of around LaS(1.41). This is believed to be due to the scattering of low-frequency phonons by large defects, i.e., second phase material (beta-phase) and pores.

Vandersande, J. W.↗
NASA NTRS1990

Pinning, flow and plastic deformation of flux vortices in high T(sub c) superconductors

In high temperature superconductor (HTSC) materials the vortices are highly mobile and flexible. This is reflected in different models of melt of a vortex lattice. Another aspect of the problem is stressed: an easy nucleation and high mobility of dislocations in the vortex lattice. Some models of plastic deformation of vortex lattice are considered as a result of its interaction with a real crystal structure. Depinning is interpreted as yield of plastic flow is vortex medium. Effect of macroscopic defects in crystal structures (pores, inclusions, grain and domain boundaries) is being considered in detail. Available experimental facts on magnetization and a critical current in HTSC and conventional superconductors are discussed from the points of view of depinning to vortices vs. plastic flow of vortices vs. plastic flow of vortices medium.

Roytburd, A.↗
NASA NTRS2006

CFD Growth of 3C-SiC on 4H/6H Mesas

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Neudeck, Philip G.↗
NASA NTRS2003

Physics of Biocrystals and Their Growth

Recent results on binding between protein molecules in crystal lattice, crystal-solution surface energy, elastic properties and strength and spontaneous crystal cracking are reviewed and discussed in the first half of the paper (Sections 2-5). In the second part, some basic approaches to solubility of proteins is followed by overview on crystal nucleation and growth (Section 6). It is argued that variability of mixing in batch crystallization may be a source scattering of crystal number ultimately appearing in the batch (Section 7). Frequency at which new molecules join crystal lattice is related to the observable crystal growth rate. Numerical criteria to discriminate diffusion and kinetic limited growth are discussed on this basis in Section 8. In Section 9, creation of defects is discussed with the emphasis on the role of impurities and convection in macromolecular crystal perfection.

Chernov, A.↗
NASA NTRS2011

Ab initio Computations of the Electronic, Mechanical, and Thermal Properties of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2

Refractory materials such as metallic borides, often considered as ultra high temperature ceramics (UHTC), are characterized by high melting point, high hardness, and good chemical inertness. These materials have many applications which require high temperature materials that can operate with no or limited oxidation. Ab initio, first principles methods are the most accurate modeling approaches available and represent a parameter free description of the material based on the quantum mechanical equations. Using these methods, many of the intrinsic properties of these material can be obtained. We performed ab initio calculations based on density functional theory for the UHTC materials ZrB2 and HfB2. Computational results are presented for structural information (lattice constants, bond lengths, etc), electronic structure (bonding motifs, densities of states, band structure, etc), thermal quantities (phonon spectra, phonon densities of states, specific heat), as well as information about point defects such as vacancy and antisite formation energies.

Lawson, John W.↗
NASA NTRS2004

Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

This article describes the initial discovery and development of new approaches to SiC homoepitaxial and heteroepitaxial growth. These approaches are based upon the previously unanticipated ability to effectively supress two-dimensional nucleation of 3C-SiC on large basal plane terraces that form between growth steps when epitaxy is carried out on 4H- and 6H-SiC nearly on-axis substrates. After subdividing the growth surface into mesa regions, pure stepflow homoeptixay with no terrace nucleation was then used to grow all existing surface steps off the edges of screw-dislocation-free mesas, leaving behind perfectly on-axis (0001) basal plane mesa surfaces completely free of atomic-scale steps. Step-free mesa surfaces as large as 0.4 mm x 0.4 mm were experimentally realized, with the yield and size of step-free mesas being initally limited by substrate screw dislocations. Continued epitaxial growth following step-free surface formation leads to the formation of thin lateral cantilevers that extend the step-free surface area from the top edge of the mesa sidewalls. By selecting a proper pre-growth mesa shape and crystallographic orientation, the rate of cantilever growth can be greatly enhanced in a web growth process that has been used to (1) enlarge step-free surface areas and (2) overgrow and laterally relocate micropipes and screw dislocations. A new growth process, named step-free surface heteroepitaxy, has been developed to achieve 3C-SiC films on 4H- and 6H-SiC substrate mesas completely free of double positioning boundary and stacking fault defects. The process is based upon the controlled terrace nucleation and lateral expansion of a single island of 3C-SiC across a step-free mesa surface. Experimental results indicate that substrateepilayer lattice mismatch is at least partially relieved parallel to the interface without dislocations that undesirably thread through the thickness of the epilayer. These results should enable realization of improved SiC homojunction and heterojunction devices. In addition, these experiments offer important insights into the nature of polytypism during SiC crystal growth.

Neudeck, Philip G.↗
NASA NTRS1971

NASA research on refractory compounds.

The behavior and properties of the refractory carbides, nitrides, and borides are being investigated by NASA as part of its research aimed at developing superior heat resistant materials for aerospace applications. Fundamental studies on the electronic and defect structures of the carbides indicate that there is promise for improving the strength and ductility of these materials. Studies of the zirconium-carbon-oxygen system show that zirconium oxycarbides of different compositions and lattice parameters can be formed between 1500 and 1900 C and are stable below 1500 C. More applied studies show that hot working generally improves the microstructure and therefore the strength of TiC and NbC. Sintering studies on UN indicate that very high densities can be achieved. Hot pressing of cermets of HfN and HfC produces good mechanical properties for high temperature bearing applications.

Gangler, J. J.↗
NASA NTRS1972

The observation of damage regions produced by neutron irradiation in lithium-doped silicon solar cells.

Study regions of lattice disorder produced in lithium-doped float-zone melted n/p-type silicon solar cells by irradiation with monoenergetic neutrons at doses between 10 to the 10th and 10 to the 13th per cu cm. The defect regions were revealed by chemically etching the surface of the solar cells and by observing carbon replicas in an electron microscope. It was found that the defect density increased with increasing irradiation dose and increased lithium content, whereas the average defect diameter was found to decrease. From thermal annealing experiments it was found that in the lithium-doped material the defect structure was stable at temperatures between 300 and 1200 K. This was found to be in contrast to the undoped material where at the lowest doses considerable annealing was observed to occur. These results are discussed in terms of the theoretical predictions and models of defect clusters proposed by Gossick (1959) and Crawford and Cleland (1959).

Ghosh, S.↗
NASA NTRS2004

Protein Crystals and their Growth

Recent results on binding between protein molecules in crystal lattice, crystal-solution surface energy, elastic properties and strength and spontaneous crystal cracking are reviewed and discussed in the first half of this paper (Sea 2-4). In the second par&, some basic approaches to solubility of proteins are followed by overview on crystal nucleation and growth (Sec 5). It is argued that variability of mixing in batch crystallization may be a source for scattering of crystal number ultimately appearing in the batch. Frequency at which new molecules join crystal lattice is measured by kinetic coefficient and related to the observable crystal growth rate. Numerical criteria to discriminate diffusion and kinetic limited growth are discussed on this basis in Sec 7. In Sec 8, creation of defects is discussed with the emphasis on the role of impurities and convection on macromolecular crystal I;erfection.

Chernov, A. A.↗
NASA NTRS2003

Protein crystals and their growth

Recent results on the associations between protein molecules in crystal lattices, crystal-solution surface energy, elastic properties, strength, and spontaneous crystal cracking are reviewed and discussed. In addition, some basic approaches to understanding the solubility of proteins are followed by an overview of crystal nucleation and growth. It is argued that variability of mixing in batch crystallization may be a source of the variation in the number of crystals ultimately appearing in the sample. The frequency at which new molecules join a crystal lattice is measured by the kinetic coefficient and is related to the observed crystal growth rate. Numerical criteria used to discriminate diffusion- and kinetic-limited growth are discussed on this basis. Finally, the creation of defects is discussed with an emphasis on the role of impurities and convection on macromolecular crystal perfection.

Review↗
NASA NTRSDate not supplied

Inefficient Growth of Refractory Grains: Implications for Grains in the Solar Nebula

Introduction: We report the results of a sounding rocket experiment in which SiO nucleation and growth in an argon atmosphere was observed in microgravity starting from a vapor generated by evaporation of waterglass deposited on a heated Ta wire. The temperature and pressure at the point of nucleation was determined using a double wavelength Mach–Zehnder-type interferometer. The particle composition and grain size distribution were measured after payload recovery using a Transmission Electron Microscope (TEM; JEM-2100F. JEOL Ltd., Tokyo). The results were analyzed using Modified Classical Nucleation Theory (MCNT)[1]. We report a measurement of the SiO-silicate grain sticking coefficient of 0.016, indicating very inefficient grain growth from the vapor. In other words, for every 100 SiO molecules that collide with a growing grain only one to two are captured. In the only two previous studies of the growth of solid particles from the gas phase the calculated sticking coefficients were much lower. For zinc atoms colliding with zinc crystals only three out of 100,000 collisions resulted in grain growth [2]. Iron atoms colliding with growing iron particles similarly showed an efficiency of ~0.00002 [3]. For zinc, we can explain inefficient growth due to the difficulty of the colliding atom coming upon a vacancy in the growing crystal lattice before it evaporates from the grain surface. The much higher sticking coefficient of SiO molecules on silica grains is reasonable because the silica grains are highly amorphous or glassy and therefore provide a much higher defect density where SiO molecules can be captured into the grains. In the case of similar Fe experiment, the critical cluster was the dimer. In this case the forming dimer returns to the vapor phase by dissociation due to the excess energy from the formation of the Fe-Fe bond.

Joseph A Nuth↗
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
NASA NTRSDate not supplied

Three-Dimensional Reconstruction of Defects and Structures in Additively Manufactured Parts with Automated Serial Sectioning

Metal additive manufacturing (AM) processes have been demonstrated to be effective at reducing costs and lead times associated with complex components for space flight applications. Laser powderbed fusion (L-PBF) is a commonly used AM technology due to the ability to produce complex parts with fine feature resolution in a wide variety of alloys and applications. L-PBF, like many other manufacturing processes, can produce minor flaws in parts when in nominal operation as well as process-escape defects when process abnormalities occur. The effects of the flaws and methods of detecting the flaws are a subject of interest to understand the difficulties in detecting these flaws with current technology and how much risk the flaws or defects pose to potential flight parts. Using a RoboMet.3D automated serial sectioning system, seeded defects as well as minor process flaws can be imaged and reconstructed in three dimensions to compare to non-destructive evaluation (NDE) techniques, such as x-ray computed tomography (CT), neutron CT, and in-situ monitoring. The RoboMet automates the metallography process by automatically grinding, polishing, and imaging samples in a single system and providing the control data for NDE comparisons to know the real size of defects built into coupons. These comparisons provide an understanding behind the technological limitations of the NDE techniques for different alloys. The same serial sectioning methods have also been utilized to characterize the surfaces of parts to reconstruct the surfaces and take measurements of internal features not easily examined with non-destructive methods. Using the RoboMet, fine lattice structures built with L-PBF have been characterized to determine the actual thicknesses of struts and density of the lattice structures. These structures have been used as finer build supports for the L-PBF process, designs for fine catalysts, and other design considerations for small components. The RoboMet data helps to inform the modeling and design efforts around these fine components.

additive manufacturing↗
NASA NTRS1987

TEM investigation of beta-SiC grown epitaxially on Si substrate by CVD

A transmission electron microscopy study is being conducted on the microstructure of beta-SiC films grown epitaxially on 001-plane silicon by chemical vapor deposition. Observations have been made in plain view and in cross-section. A high density of stacking faults has been found in the bulk of the epilayer which are bounded by partials of the Shockley type with Burgers vectors 1/6 211-line. Cross-sectional high resolution electron microscopy of the interface has shown it to be semicoherent with misfit dislocations to accommodate the lattice parameter difference between the substrate and the epilayer. In addition to misfit dislocations, a high density of twins and some stacking faults are present in the SiC near the interface. Mechanisms for the nucleation and growth of these defects are discussed.

Chorey, C. M.↗
NASA NTRS1994

Thermotile Refrigerators

Thermoelectric tiles provide cooling exactly where needed. Thermotile is modular thermoelectric cooling unit that incorporates sensor and electronic circuitry in addition to thermoelectric device. Refrigerator/freezer is lined with thermotiles clipped into supporting lattices. Small fans used to circulate air in refrigerator and freezer compartments. Elimination of conventional mechanical refrigeration machinery reduces number of moving parts and completely eliminates noise and vibration. Data capabilities of thermotile refrigeration system used for diagnosis of defects or monitoring local temperatures. Thermotiles produced by automated manufacturing techniques. Custom shapes molded as needed.

Park, Brian V.↗
NASA NTRS1989

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗