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114 records · Page 7

Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits

Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$γ$-Al$_2$O$_3$/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial $γ$-Al$_2$O$_3$, for which we find a low intrinsic two-level system loss, $δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}$. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.

Garcia-Wetten, David A. [Northwestern U.]↗

Modeling in High Temperature Corrosion: A Review and Outlook

Realizing higher operating temperatures to increase efficiency of future applications for energy conversion and storage while minimizing cost is a challenge for development of high-temperature materials. Simultaneous optimization of mechanical properties and corrosion resistance continues to be a difficult task but is essential due to the need to significantly accelerate the transition between technology readiness levels in the future. Furthermore, oxidation-induced degradation will be a critical life-limiting mechanism at increased operating temperatures. Suitable high-temperature materials cannot be solely identified by time-consuming experiments and reliable computational methods incorporating the relevant physics of processes must be considered to complement the experimental efforts. In the present work, a review of the methods employed to model oxidation-induced material degradation described in literature will be discussed. Furthermore, their capability to predict lifetime and aid in material selection will be evaluated.

36 MATERIALS SCIENCE↗

Evaluating the efficacy of aluminide coatings to improve oxidation resistance of high performance engine valve alloys

Increasing peak cylinder pressures and operating temperatures of turbo-charged internal combustion engines (ICEs) engines present new challenges for existing materials employed in engine exhaust valves. Oxidation induced degradation of current Ni based alloys for these components will be a life-limiting mechanism while strict cost margins in the automotive transportation industry further limit the choice of suitable candidate materials. Metallic diffusion aluminide coatings can provide a cost-effective way to improve the oxidation resistance of underlying materials. In this study, the high temperature oxidation behavior of diffusion nickel aluminide coatings on two Ni based alloys (commercially available alloy 31V and a developmental alloy) during cyclic oxidation behavior in air+10% H 2 O at 900 °C was investigated. A complete depletion of the beneficial Al-rich β-(NiFe)Al phase was observed in the coating on alloy 31V while a significant fraction of this phase was retained in the coating on the second alloy. A coupled thermodynamic-kinetic model showed that the disappearance of the Al-rich phase in the coating on 31V was mainly due to the combined effect of steeper chemical potential gradients of Al and Ti between the coating and the substrate and their faster diffusivities compared to the coated developmental alloy. Finally, a higher content of Fe was shown to support the retention of β-(NiFe)Al phase in the coating on the developmental alloy while the presence of Ti in the alloy was shown to be detrimental for long-term coating performance.

36 MATERIALS SCIENCE↗

Solid-State Ionic Rectification in Perovskite Nanowire Heterostructures

Halide perovskites have attracted increasing research attention with regard to their potential for optoelectronic applications. Because of its low activation energy, ion migration is implicated in the long-term stability and many unusual transport behaviors of halide perovskite devices. However, direct observation and precise control of the ionic transport in halide perovskite crystals remain challenging. Here, we have designed an axial CsPbBr 3 -CsPbCl 3 nanowire heterostructure, in which electric-field-induced halide ion migration was clearly visualized and quantified. We demonstrated that halide ion migration is dependent on the applied electric field and exhibits ionic rectification in this solid-state system, which is due to the nonuniform distribution of the ionic vacancies in the nanowire that results from a competition between electrical screening and their creation/destruction at the electrodes' interfaces. Furthermore, the asymmetric heterostructure characteristics add an additional knob to control the ion movement in the design of advanced ionic circuits with halide perovskites as building blocks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Exchange of Ions across the TiN/TaO x Interface during Electroformation of TaO x -Based Resistive Switching Devices

The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy elemental maps of Ta, O, N, and Ti in electroformed TiN/TaO 2.0 /TiN structures. O, N, and Ti were exchanged between the anode and the functional oxide in devices formed at high power (~1 mW), but the exchange was below the detection limit at low power (<0.5 mW). All structures exhibit a similar Ta-enriched and O-depleted filament formed by the elemental segregation in the functional oxide by the temperature gradient. The elemental interchange is interpreted as due to Fick’s diffusion caused by high temperatures in the gap of the filament and is not an essential part of electroformation.

36 MATERIALS SCIENCE↗

Understanding the Solid-State Electrode–Electrolyte Interface of a Model System Using First-Principles Statistical Mechanics and Thin-Film X-ray Characterization

Intermixing of atomic species at the electrode-electrolyte boundaries can impact the properties of the interfaces in solid-state batteries. Herein, this work uses first-principles statistical mechanics along with experimental characterization to understand intermixing at the electrode-electrolyte interface. For the model presented in this work, lithium manganese oxide (LiMn 2 O 4 , LMO) and lithium lanthanum titanate (Li 3x La 2/3-x TiO 3 , LLTO) are employed as the cathode and electrolyte, respectively. The results of the computational work show that Ti-Mn intermixing at the interface is significant at synthesis temperatures. The experimental results in this work find that, at some critical temperatures between 600 and 700 degrees C for material preparation, the interface of LLTO-LMO becomes blurred. Calculations predict that the interface is unstable with regard to Ti-Mn intermixing starting at 0 K, suggesting that the critical temperature found in the experiment is related to kinetics. The work overall suggests that, in designing a solid-state battery, the fundamental reactions such as intermixing need to be considered.

25 ENERGY STORAGE↗