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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

Abstract Superconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 10 10 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb 3 Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb 3 Sn, it has been proposed to coat Nb cavities with thin film Nb 3 Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb 3 Sn/Al 2 O 3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al 2 O 3 and Nb 3 Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Circumventing thermodynamics to synthesize highly metastable perovskites: nano eggshells of SnHfO 3

Sn(II)-based perovskite oxides, being the subject of longstanding theoretical interest for the past two decades, have been synthesized for the first time in the form of nano eggshell particle morphologies. All past reported synthetic attempts have been unsuccessful owing to their metastable nature, i.e., by their thermodynamic instability towards decomposition to their constituent oxides. A new approach was discovered that finally provides an effective solution to surmounting this intractable synthetic barrier and which can be the key to unlocking the door to many other predicted metastable oxides. A low-melting KSn 2 Cl 5 salt was utilized to achieve a soft topotactic exchange of Sn(II) cations into a Ba-containing perovskite, i.e., BaHfO 3 with particle sizes of ~350 nm, at a low reaction temperature of 200 °C. The resulting particles exhibit nanoshell-over-nanoshell morphologies, i.e., with SnHfO 3 forming as ~20 nm thick shells over the surfaces of the BaHfO 3 eggshell particles. Formation of the metastable SnHfO 3 is found to be thermodynamically driven by the co-production of the highly stable BaCl 2 and KCl side products. Despite this, total energy calculations show that Sn(II) distorts from the A-site asymmetrically and randomly and the interdiffusion has a negligible impact on the energy of the system (i.e., layered vs. solid solution). Additionally, nano eggshell particle morphologies of BaHfO 3 were found to yield highly pure SnHfO 3 for the first time, thus circumventing the intrinsic ion-diffusion limits occurring at this low reaction temperature. In summary, these results demonstrate that the metastability of many theoretically predicted Sn(II)-perovskites can be overcome by leveraging the high cohesive energies of the reactants, the exothermic formation of a stable salt side product, and a shortened diffusion pathway for the Sn(II) cations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Simultaneously improved reversibility and hydrogen production of solid oxide cells through infiltrating air electrode

Among the various fuel cells, solid oxide cells (SOCs) are the unique type that can principally operate reversibly as either fuel cells to produce electricity or as an electrolyser to split water and produce green hydrogen (H 2 ). Nevertheless, the SOCs' reversibility presents enormous challenges that are manifested by the fast degradation through the cycling between fuel cell and electrolysis mode. While the La 0.8 Sr 0.2 MnO 3 /yttria-stabilized zirconia (LSM/YSZ) air electrode possesses significant advantages in terms of high electrical conductivity and high thermal stability under fuel cell mode, the SOCs with the LSM/YSZ air electrode experience rapid performance degradation with catastrophic electrode delamination shortly after switching from fuel cell to electrolysis mode. To prevent such catastrophic delamination and enable the electrolysis H 2 production, a chemical solution with the designed chemistry of SrFe 2 O 4-d was infiltrated into the LSM/YSZ air electrode. The infiltration immediately mitigates the catastrophic delamination, and the infiltrated cells exhibit significantly improved reversibility upon the electrochemical operation. Nanostructure examination reveals nanoscale cracks and second-phase nanograins formed in the air electrode from the baseline cell. By contrast, no delamination was observed at either the micron or the nanoscale for the infiltrated cell, which is attributed to the increased ion conductivity of the Fe-doped LSM mixed conductor induced by the significant interdiffusion between the LSM backbone and infiltrates. Here, this study presents a viable method for preventing electrode delamination while enhancing the durability of H 2 production and power generation for reversible fuel cell/electrolysis cell operation. It further opens new research directions of modifying the electrochemical activity of the electrode of inherently functional cells through the infiltration of the solutions with different chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

In situ x-ray and electron scattering studies of oxide molecular beam epitaxial growth

We perform the first in situ synchrotron X-ray ray diffraction (SXRD) / reflection high energy electron diffraction (RHEED) studies on the growth of complex oxide thin films by molecular beam epitaxy. The unique deposition chamber, located at the Advanced Photon Source, allows the preparation of complex oxide samples with monolayer precision and facilitates the formation of direct correlations between in situ X-ray studies and the more prevalent RHEED investigations. Importantly, because SXRD and RHEED probe different atomic-scale processes during thin film synthesis, their concomitant use enables the extraction of details concerning growth behavior than one cannot determine from either probe alone. We describe the results of such in situ studies on the epitaxial growth of perovskite LaNiO3on (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 (001). We find that during the earliest stages of growth, the RHEED and X-ray signals do not agree with each other, demonstrating that while regular RHEED oscillations may imply high quality growth, the film-substrate interface can undergo significant changes during deposition due to the occurrence of interdiffusion at the growth temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Epitaxial PbGeSe thin films and their photoluminescence in the mid-wave infrared

PbSe is a narrow bandgap IV–VI compound semiconductor with application in mid-wave infrared optoelectronics, thermoelectrics, and quantum devices. Alkaline-earth or rare-earth elements such as Sr and Eu can substitute Pb to widen the bandgap of PbSe in heterostructure devices, but they come with challenges such as deteriorating optical and electronic properties, even in dilute concentrations due to their dissimilar atomic nature. We substitute Pb instead with column IV Ge and assess the potential of rocksalt phase PbGeSe as a wider bandgap semiconductor in thin films grown by molecular beam epitaxy on GaAs substrates. Low sticking of GeSe adatoms requires synthesis temperatures below 260 °C to incorporate Ge, but this yields poor structural and compositional uniformity as determined by x-ray diffraction. Consequently, as-grown films in the range Pb0.94Ge0.06Se–Pb0.83Ge0.17Se (6%–17% Ge) show much less bandgap widening in photoluminescence than prior work on bulk crystals using absorption. We observe that post-growth rapid thermal annealing at temperatures of 375–450 °C improves the crystal quality and recovers bandgap widening. Rapid interdiffusion of Ge during annealing, however, remains a challenge in harnessing such PbGeSe materials for compositionally sharp heterostructures. Annealed 17% Ge films emit light at 3–3.1 μm with a minimal shift in wavelength vs temperature. These samples are wider in bandgap than PbSe films by 55 meV at room temperature, and the widening increases to 160 meV at 80 K, thanks to sharply different dependence of bandgap on temperature in PbSe vs PbGeSe.

Xiao, Kelly (ORCID:0000000321000838)↗
DOE OSTI2021

Growth and characterization of La 0.67 Sr 0.33 MnO 3 /YBa 2 Cu 3 O 7- δ bilayers

Understanding the interplay of ferromagnets and superconductors requires high quality interfaces. To this end, we have fabricated heterostructures of the cuprate superconductor YBa2Cu3O7-δ (YBCO) with the metallic ferromagnet La0.67Sr0.33MnO3 (LSMO) via pulsed laser deposition on SrTiO3 (STO) (001) and (LaAlO3)0.3(Sr2TaAlO6)0.7 (LSAT) (001) substrates. By varying the YBCO thickness from 1.7-13.6 nm while keeping the LSMO thickness at 12 nm, we have studied the interplay between ferromagnetism and superconductivity in the in-plane transport and magnetic properties of the bilayers. X-ray reflectivity data indicate the presence of a 2-3 nm thick interfacial layer between the LSMO and YBCO layers in all heterostructures. In-plane transport measurements exhibit suppression of the superconducting transition temperature from bulk YBCO values. Magnetometry measurements indicate high LSMO saturation magnetization values for samples grown on STO substrates and even higher (bulk-like) magnetization for bilayers grown on LSAT substrates. Together these results indicate that the interdiffused layer is largely attributed to a modified YBCO layer.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Direct growth of crystalline SiGe nanowires on superconducting NbTiN thin films

Novel heterostructures created by coupling one-dimensional semiconductor nanowires with a superconducting thin film show great potential toward next-generation quantum computing. Here, by growing high-crystalline SiGe nanowires on a NbTiN thin film, the resulting heterostructure exhibits Ohmic characteristics as well as a shift of the superconducting transition temperature (T c ). The structure was characterized at atomic resolution showing a sharp SiGe/NbTiN interface without atomic interdiffusion. Lattice spacing, as calculated from large-area x-ray diffraction experiments, suggests a potential preferred d-spacing matching between (200) NbTiN and (110) SiGe grains. The observed out-of-plane compressive strain within the NbTiN films coupled with SiGe nanowires explains the downward shift of the superconductivity behavior. The presented results post scientific insights toward functional heterostructures by coupling multi-dimensional materials, which could enable tunable superconductivity that benefits the quantum science applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2026

Machine-learned quantum molecular dynamics calculations of warm dense equation of state and ionic transport coefficients of deuterated water

White dwarf models require accurate equations of state and ionic transport coefficients in the warm dense matter regime, where kinetic theory models and tabulated equations of state are often inaccurate. In this work, spectral-partitioned density functional theory and machine-learned interatomic potentials are combined to perform large-scale, first-principles quantum molecular dynamics simulations of deuterated water (D 2 O) near the principal Hugoniot. This approach retains Kohn-Sham accuracy while achieving orders-of-magnitude speedup, yielding converged equation of state and transport properties over a broad pressure and temperature range. The results reveal the thermodynamic conditions under which ionic transport models for interdiffusivity and shear viscosity converge and identify those in closest agreement with density functional theory benchmarks at temperatures in the warm dense matter regime. The present framework extends first-principles transport calculations to higher temperatures than previously achieved, and provides an efficient, scalable, and general approach for studying transport properties in complex multicomponent mixtures.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2024

Probing intrinsic magnetization dynamics of the Y 3⁢ Fe 5 ⁢O 12 /Bi 2 ⁢Te 3 interface at low temperature

Topological insulator–magnetic insulator (TI–MI) heterostructures hold significant promise in the field of spintronics, offering the potential for manipulating magnetization through topological surface state–enabled spin-orbit torque. However, many TI–MI interfaces are plagued by issues such as contamination within the magnetic insulator layer and the presence of a low-density transitional region of the topological insulator. These interfacial challenges often obscure the intrinsic behavior of the TI–MI system. In this study, we addressed these challenges by depositing sputtered Bi 2 ⁢Te 3 on liquid phase epitaxy grown Y 3 ⁢Fe 5 ⁢O 12 /Gd 3 ⁢Ga 5 ⁢O 12 . The liquid phase epitaxy grown Y 3 ⁢Fe 5 ⁢O 12 has been previously shown to have exceptional interface quality, without an extended transient layer derived from interdiffusion processes of the substrate or impurity ions, thereby eliminating rare-earth impurity-related losses in the MI at low temperatures. At the TI–MI interface, high-resolution depth-sensitive polarized neutron reflectometry confirmed the absence of a low-density transitional growth region of the TI. By overcoming these undesirable interfacial effects, we isolate and probe the intrinsic low-temperature magnetization dynamics and transport properties of the TI–MI interface. In conclusion, our findings revealed strong spin pumping at low temperatures, accompanied by an additional in-plane anisotropy. The enhanced spin pumping at low temperatures is correlated with the observed suppression of bulk conduction and the weak antilocalization in the TI film, highlighting the interplay between the transport and spin pumping behavior in the TI–MI system.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Morphology selection in dealloying: A phase field study of the coupling among kinetic mechanisms

A phase field model is used to investigate how the corrosion rate and morphology of a dealloying metal is controlled by the kinetic rates of bulk solid diffusion, interfacial diffusivity, and interface dissolution. A specific focus is investigating the manner by which variations in these kinetic parameters synergistically influence the onset of a morphological instability at the solid-liquid interface, which is known to precede rapid dealloying corrosion towards highly topologically complex structures such as bicontinuous porous solids. This work demonstrates that this instability can be suppressed by either an increase of interdiffusion in the solid alloy, or by a decreasing rate of dissolution at the solid-liquid interface. When the instability is suppressed, the result is a relatively planar, passivated dealloying front. Importantly, however, coupled changes in kinetic parameters can also promote the morphological instability and sustain fine-scale ligament and pore formation. Finally, the relevance of the solid-liquid interfacial diffusion for determining the rate of dealloying and ligament formation is highlighted. By elucidating the mechanistic influence of bulk and interfacial kinetic factors on the dealloyed morphology, this work helps to rationalize the contrasting morphologies observed in various dealloying systems.

Diffusion↗
DOE OSTI2026

A high transmission tender X-ray monochromator employing a matched pair of multilayer grating and mirror

It is now well established that multilayer coated gratings may offer high diffraction efficiencies over the tender X-ray range, from about 1 keV to 5 keV, covering the gap between single layer coated grating monochromators and crystal monochromators. Nevertheless, few beamlines in the world are using such gratings in their monochromator. The successful implementation of a multilayer grating monochromator requires producing a matched pair of a multilayer grating and a multilayer mirror, and this matching is not straightforward as it must account for different incidence angles and refraction effects on each element. Here we review the realization of the multilayer grating monochromator of the SIRIUS beamline which has been successfully in service for several years. We show how, by alternating computer simulation with our diffraction code and measurements, we could optimize the monochromator transmission on a very wide energy range. After the grating was coated, it was found that the angle of optimal efficiency versus photon energy was significantly different from what was predicted by a simple conformal model of binary layers. Layer interdiffusion and profile smoothing during the deposition process must be added to the multilayer model to reproduce the measured data. The critical adjustment of the mirror multilayer period is achieved by the lateral translation of the mirror, which was given a small transverse period gradient. The monochromator is thus providing high transmission efficiency in the 1 to 5 keV energy range, more than 30% over 2.5 keV and up to 46% at 4.6 keV.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Studying the Recrystallization of Cu(InGa)Se 2 Semiconductor Thin Films by Silver Bromide In-situ Treatment

Cu(In,Ga)Se 2 samples were fabricated using a 3-stage thermal co-evaporation process on molybdenum back contact at low temperature. The process of recrystallization was carried out in between the 2 nd and 3 rd stages by flashing 25 mg of AgBr for 2 minutes. A change in morphological structure was observed as small grains transformed into large grains, as confirmed by XRD and SEM measurements. The decrease of the Ga gradient, seen in the SIMS depth profile, suggests Ga interdiffusion due to AgBr treatment. Altogether, the AgBr treatment contributes to a general improvement in device performance as compared to the as-deposited devices.

14 SOLAR ENERGY↗
DOE OSTI2024

Characterization of n-Type Iodine-Doped and Indium-Doped CdTe/Cd-Se-Te Thin Films Fabricated by Close-Spaced Sublimation Epitaxy

In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.

cadmium compounds↗
DOE OSTI2022

Mass Transport in Binary TiO 2 :SiO 2 and GeO 2 :SiO 2 Direct Ink Write Glasses

The mass transport mechanisms of Ti in TiO 2 :SiO 2 and Ge in GeO 2 :SiO 2 direct ink write, additively manufactured glasses were studied. Due to the low solubility of Ti in SiO2 and high melting point of TiO 2 relative to SiO 2 , Ti transport was found to occur via solid state interdiffusion between adjoining SiO 2 and TiO 2 precursor particles. The diffusivity of titanium in SiO 2 measured over typical sintering temperatures (1000-1300 °C) using Rutherford backscattering spectrometry was D = 9.1 × 10 -7 [m2/sec] exp ($\frac{378[\frac{kJ}{mol}]}{RT}$. This provides an estimate of ~30 nm for the diffusion length under typical sintering conditions (2 hrs. at 1200 °C). Although Ti and Ge have similar diffusivities in SiO 2 glass at low concentrations, GeO 2 was found to be much more mobile during the sintering of printed GeO 2 :SiO 2 green bodies. This was evident in glasses with phase separated GeO 2 regions over length scales of ~10 μm and in experiments involving binary xerogels in which GeO 2 migrated over ~10 μm through cracked, porous SiO 2 layers. Large phase separated regions and long transport lengths in GeO 2 :SiO 2 suggest that the transport of GeO 2 occurs prior to the densification of the SiO 2 matrix via an alternative mechanism such as capillary flow. These results inform important considerations in the design of index modifying inks for the direct ink write process, namely initial precursor phase, mutual solubility with the base SiO 2 glass, and mass transport throughout the sintering process.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Impact on aggregate/matrix bonding when a refractory contains zinc aluminate instead of spinel and magnesia‐chrome

The high hot strength of MgO–Cr 2 O 3 refractory is often ascribed to its intimate aggregate/matrix bonding. For a fundamental comparison with it, ~2 mm aggregates of MgO and Al 2 O 3 were separately embedded in ZnAl 2 O 4 and MgAl 2 O 4 matrices, sintered at 1600°C, and examined. It was found that similarity of thermal expansion coefficient (TEC) between the aggregate and the matrix is critical to achieve good bonding and this is more important than the extent of interdiffusion. The TEC mismatch of ≥ 5.7 × 10 -6 K -1 caused significant undesirable debonding in MgO aggregate/MgAl 2 O 4 matrix sample and MgO/ZnAl 2 O 4 despite >736 μm Zn 2+ diffusion depth in the latter. Direct bonding, as inferred from a thicker interfacial reaction layer and a greater shift of the aggregate/matrix interface before and after firing, was better in MgAl 2 O 4 /ZnAl 2 O 4 combination, followed by tabular Al 2 O 3 /ZnAl 2 O 4 and Al 2 O 3 /MgAl 2 O 4 . Powder X-ray diffraction indicated that the volatilization of ZnAl 2 O 4 at 1600°C in air was negligible compared to MgO–Cr 2 O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2026

Harnessing Chemical Short‐Range Disorder to Improve Lithium Retention in Epitaxial LLTO Solid‐Electrolyte Thin Films

Lithium lanthanum titanate Li 3x La 2/3-x TiO 3 (LLTO) is a promising perovskite-based solid-state electrolyte for next-generation lithium-ion batteries, but controlling crystallinity and Li stoichiometry in thin-film form is challenging because high growth temperatures are required to achieve good crystallinity while Li remains strongly volatile. Here, we systematically investigate the effect of substrate temperature on epitaxial LLTO thin films grown by pulsed laser deposition. We identify a narrow growth window (750–800°C) in which LLTO films grow as c-axis oriented with atomically flat surfaces. Lower growth temperatures (<750°C) stabilize laterally extended, chemically disordered stripe domains that coexist with ordered LLTO regions, whereas higher temperatures (≥825°C) suppress these defects but promote island morphologies and Al/Ti interdiffusion. While spectroscopy measurements show that Ti remains in the 4+ oxidation state and Li is globally deficient for all films, our depth-resolved time-of-flight secondary ion mass spectrometry studies reveal that the 700°C film retains the highest Li content across its thickness. These results clarify how growth temperature controls crystallinity, chemical short-range disorder, and Li retention, and highlight moderate growth temperatures (∼700°C) as a route to mitigate Li loss in epitaxial solid-electrolyte films.

chemical short-range disorder↗
DOE OSTI2021

Prospects for the expansion of standing wave ambient pressure photoemission spectroscopy to reactions at elevated temperatures

Standing wave ambient pressure photoemission spectroscopy (SWAPPS) is a promising method to investigate chemical and potential gradients across solid-vapor and solid-liquid interfaces under close-to-realistic environmental conditions, far away from high vacuum. Until now, these investigations have been performed only near room temperature, but for a wide range of interfacial processes, chief among them being heterogeneous catalysis, measurements at elevated temperatures are required. One concern in these investigations is the temperature stability of the multilayer mirrors, which generate the standing wave field. At elevated temperatures, degradation of the multilayer mirror due to, for example, interdiffusion between the adjacent layers, decreases the modulation of the standing wave field, thus rendering SWAPPS experiments much harder to perform. Here, we show that multilayer mirrors consisting of alternate B4C and W layers are stable at temperatures exceeding 600 °C and are, thus, promising candidates for future studies of surface and subsurface species in heterogeneous catalytic reactions using SWAPPS.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Comparative study on the formation of Cr and Ti ohmic contacts to (001) β -Ga 2 O 3

Here, a comparative study of Cr/Au and Ti/Au ohmic contacts on (001) β-Ga 2 O 3 was conducted. The electrical behavior from current-voltage measurements and the interfacial composition and microstructure as determined from high-resolution transmission electron microscopy (TEM) with energy dispersive x-ray analysis were compared for the different contacts at selected points in an annealing series (300–700 °C, 1 min. anneals in N 2 ). Cr/Au contacts became ohmic at temperatures (300–350 °C) approximately 50–100 °C lower than Ti/Au contacts (400–450 °C). Cr/Au and Ti/Au contacts demonstrated optimal ohmic behavior (lowest resistance) when annealed to 450–500 and 500–600 °C, respectively, with Ti/Au contacts yielding a lower total resistance than Cr/Au. Cross-sectional TEM images of Cr/Au contacts annealed at 450 °C revealed the presence of Au nanoclusters at the Ga 2 O 3 interface and CrO x layers at both the top of the contact and the Ga 2 O 3 interface. Whereas TiO x also formed at the top and bottom interfaces in 450 °C-annealed Ti/Au contacts, the TiO x surface layer appeared to be variable in thickness and/or discontinuous, unlike the CrO x surface layer. Au nanoclusters were not detected at the interface in the Ti/Au contacts. The interdiffusion and oxidation observed in both contact metallizations point to the need for diffusion barriers that may allow these contacts to be used in future Ga 2 O 3 -based devices that operate at elevated temperatures.

36 MATERIALS SCIENCE↗