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At least 127 records · Page 7

GEER Status Update

History: The Glenn Extreme Environments Rig (GEER) first became operational in the early part of 2015. Since that time GEER has completed a number of scientific tests and has undergone improvements in the chemical delivery system and analytics following a year of operations experience. Recent Updates: In June 2016, the GEER process system was rebuilt to provide a more robust system, higher accuracy and new capabilities. New insulation was installed on the exterior of the pressure vessel and gas lines. The newly revamped GEER plumbing system can provide extremely precise custom gas mixtures using any gas desired by the investigator in any combination. GEER can heat the resulting mixture up to 500 deg C and 1500 psia. The 304 stainless steel vessel walls were polished to reduce corrosion rate and reduce unwanted chemical reactions. The process lines were replaced with high purity Sulfinert coated tubing. The GEER team added the ability to individually boost specialty gases to GEER thus allowing operators to make very precise changes to the gas chemistry inside of GEER during a test while at high temperature and pressure. High accuracy mass flow meters were added to further improve gas mixing accuracy and precision. An in-line, integrated Inficon MicroGC Fusion was added for real time gas analysis along with a high purity gas sampling system, providing fully automated, real time analysis of the gas chemistry inside of GEER in minutes. This complements a co-located mass spectrometer and both are used for regular monitoring of the vessel chemistry. All internal vessel components were replaced with polished 304SS equivalents. Hot vent down capability was increased. Finally, an automated liquid injection system was added and is rated for max vessel operating conditions of (1500 psia, 500 C). Recent Results and Publications: In May 2016, GEER completed a test that exposed high temperature electronics to Venus surface conditions for 21.5 days. This demonstrated the potential for operating robotic spacecraft in the Venus environment without the need for thermal or environmental protection. Results from this test were published in December 2016 and received national media attention. In April 2017 GEER implemented an 80 day test at Venus surface conditions to simulate chemical weathering of expected Venus minerals. This test supported a ROSES award to a team led by Prof. Ralph Harvey of Case Western Reserve University. The test concluded in July 2017 and nearly doubled previous operation record of 42 days at Venus surface conditions. Preliminary results of these and previous experiments were presented at the recent Venus Modeling Workshop. In June 2017, NASA TM2017-219437 "Chemical and Microstructural Changes in Metallic and Ceramic Materials Exposed to Venusian Surface Conditions" was published. This report provides an extensive and valuable resource detailing the behavior of a variety of engineering materials at Venus surface conditions. Community Involvement: An external science advisory panel has been formed.

Kremic, Tibor↗

SAEVe (Seismic and Atmospheric Exploration of Venus): A Long-Lived Lander Concept for Venus

Many crucial geophysical and atmospheric science investigations at Venus require operations on the surface for an entire solar day. Until recently this was not achievable, but new developments in high temperature electronics have now made months long operations on the Venus surface possible even with smallsat class missions. Here we describe a study of a long-lived Venus lander called SAEVe, for Seismic and Atmospheric Exploration of Venus: this was one of the concepts selected in 2017 under NASA's Planetary Science Deep Space SmallSat Studies (PSDS3) call.

lander concept↗

Development of a Venus Surface Wind Sensor Based on a Miniature Drag-Force Anemometer

To better understand the atmospheric structure and dynamics on the Venus surface and provide input to climate models, there is a need to measure the wind velocity and direction on the surface and track changes over extended periods. A wind sensor based on a miniature drag-force anemometer is being developed to meet the challenges for wind measurements and operational requirements on the surface of Venus. The sensor materials are chosen to enhance durability and prevent reactivity with the Venus surface atmosphere. Advantages of this approach include that it is independent on variable heat transfer, has been matured in other harsh environment applications,and has a low mass and power requirement. This report describes demonstration of this miniature drag-force anemometer integrated with high temperature electronics in simulated Venus surface environment. Prototype drag-force anemometers were demonstrated integrated with an operational amplifier recording transient effects in a simulated Venus surface environment. For multidirectional wind monitoring, the sensors are small enough to be deployed orthogonally as a three-dimensional array on a small arm or mast

wind measurement↗

Development of a Venus Surface Wind Sensor

To better understand the atmospheric structure and dynamics on the Venus surface and provide input to climate models, there is a need to measure the wind velocity and direction on the surface and track changes over extended periods. A wind sensor based on a miniature drag-force anemometer is being developed to meet the challenges for wind measurements and operational requirements on the surface of Venus. The sensor materials are chosen to enhance durability and prevent reactivity with the Venus surface atmosphere. Advantages of this approach include that it is independent of variable heat transfer, has been matured in other harsh environment applications, and has a low mass and power requirement. Prototype drag-force anemometers were demonstrated, integrated with a high-temperature operational amplifier, recording transient effects in a simulated Venus surface environment. For multidirectional wind monitoring, the sensors are small enough to be deployed orthogonally as a three-dimensional array on a small arm or mast. This presentation describes the development and demonstration of this miniature drag-force anemometer integrated with high temperature electronics in a simulated Venus surface environment.

wind measurement↗

Metal Contact Processing Experiments Towards Realizing 500 °C Durable RF 4H-SiC BJTs

This paper presents results from metal contact processing experiments towards the implementationof durable 500 deg.C high-frequency 4H-SiC bipolar junction transistors (BJTs). Specifically, p-type ohmic contacts have been demonstrated on a 0.25 μm-thick p-type homoepitaxial layer of doping 8 x 1018± 4 x 1018cm-3. Finally, preliminary current-voltage characteristics of fabricated BJTs are presented.

RF SiC↗

Scalar Atomic Defect-Based Solid-State Self-calibrating Magnetometer (3SM) for Space Plasma Analysis

The Earth’s magnetosphere is a system of multiple, co-located particle populations interacting via plasma waves. Things to understand are driving processes, radiation belt and ring current issues, auroral physics, internal plasma processes, and magnetosphere-ionosphere mapping issues. These plasma-physics processes enable the Earth’s magnetosphere to evolve in response to temporal changes in the solar wind and they underlie the phenomena of space weather, which impacts spacecraft systems, astronauts, radio communications, and ground based electric-power grids. The objective of 3SM is to measure magnetic field strength and to calibrate the Vector Magnetometer (VM) device to maintain absolute accuracy during a mission. The 3SM features make the instrument preferably suited not only for the traditional role of scalar magnetometers as absolute references for the calibration of the on-board vector instruments, but also for extended operational capacities, such as higher frequency scalar measurements (of potential interest for magnetosphere studies for the low frequency part of the spectrum) or autonomous scalar / vector operations. Diamond has been the solid-state platform of choice for quantum device technologies for some time, however, it suffers from difficulties such as scalability, integration, and cost. While the diamond platform is very useful for quantum technologies, further development is needed to make it viable. The material platform of choice for NASA Glenn’s Quantum Sensing And Spin Physics (Q-SASP) is silicon carbide (SiC). This is due to the much higher industry development of the SiC material platform for high-power and high-temperature electronics. It leverages both the decades-long SiC development expertise and infrastructure at NASA Glenn and its growing capabilities in quantum metrology. To make SiC devices usable for quantum technologies such as quantum sources, a much deeper understanding of defects is needed. Q-SASP is developing quantum metrology capabilities to evaluate the energy structure, defect formation energy, band structure augmentation, generation/recombination rates, and limits of dipole-dipole coupling in non-metal implanted SiC devices. This can be achieved by analysis of zero-field splitting, low-field resonance, and singlet-triplet mixing through various forms of Electrically Detectable Magnetic Resonance (EDMR) and Near-Zero Field Magnetic Resonance (NZFMR) spectroscopy. This work will discuss recent system developments, device developments, computational modeling, and spectroscopy results and analysis of defects created by non-metal implantations in SiC devices. The defect formation energies of V Si ,V C , V C V Si , N C V Si , N Si , N C in 4H-SiC are previously reported values in other research [2]-[3]. The defect formation energies of PSi and PC were calculated in GPAW [fig 1A]. The basic underlying mechanism of the zero-field phenomenon is the mixing of singlet and triplet states [4]-[5]. In most spin-dependent transport, two electron spins are involved, and thus one must consider each of their interactions with the field. We investigated the electronic and magnetic properties of 4H-SiC and 6H-SiC. The defect formation energy helps us determine what types of defects we are observing in the SiC EDMR experiment. They have very low formation energy (it is negative). The phosphorus substitution in 4H-SiC is a very stable defect. The band diagrams provide us with vital information about how the electronic properties of SiC (such as band gap) change as we add non-metal defects. The zero-field splitting parameters allow us to study the inflection point in the NZFMR [fig 1B]. We clearly observed zero-field splitting. We also noted that the zero-field splitting remained constant with changing bias. We aspect it zero-field splitting to remain constant while the hyperfine and exchange interaction perturbations shift under the influence of an external magnetic field. This is the essence of quantum magnetometry and self-calibration.

space plasma↗

Scanning and Transmission Electron Microscopy of High Temperature Materials

Software and hardware updates to further extend the capability of the electron microscope were carried out. A range of materials such as intermetallics, metal-matrix composites, ceramic-matrix composites, ceramics and intermetallic compounds, based on refractory elements were examined under this research. Crystal structure, size, shape and volume fraction distribution of various phases which constitute the microstructures were examined. Deformed materials were studied to understand the effect of interfacial microstructure on the deformation and fracture behavior of these materials. Specimens tested for a range of mechanical property requirements, such as stress rupture, creep, low cycle fatigue, high cycle fatigue, thermomechanical fatigue, etc. were examined. Microstructural and microchemical stability of these materials exposed to simulated operating environments were investigated. The EOIM Shuttle post-flight samples were also examined to understand the influence of low gravity processing on microstructure. In addition, fractographic analyses of Nb-Zr-W, titanium aluminide, molybdenum silicide and silicon carbide samples were carried out. Extensive characterization of sapphire fibers in the fiber-reinforced composites made by powder cloth processing was made. Finally, pressure infiltration casting of metal-matrix composites was carried out.

Source record↗

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

High Temperature Wireless Communication And Electronics For Harsh Environment Applications

In order for future aerospace propulsion systems to meet the increasing requirements for decreased maintenance, improved capability, and increased safety, the inclusion of intelligence into the propulsion system design and operation becomes necessary. These propulsion systems will have to incorporate technology that will monitor propulsion component conditions, analyze the incoming data, and modify operating parameters to optimize propulsion system operations. This implies the development of sensors, actuators, and electronics, with associated packaging, that will be able to operate under the harsh environments present in an engine. However, given the harsh environments inherent in propulsion systems, the development of engine-compatible electronics and sensors is not straightforward. The ability of a sensor system to operate in a given environment often depends as much on the technologies supporting the sensor element as the element itself. If the supporting technology cannot handle the application, then no matter how good the sensor is itself, the sensor system will fail. An example is high temperature environments where supporting technologies are often not capable of operation in engine conditions. Further, for every sensor going into an engine environment, i.e., for every new piece of hardware that improves the in-situ intelligence of the components, communication wires almost always must follow. The communication wires may be within or between parts, or from the engine to the controller. As more hardware is added, more wires, weight, complexity, and potential for unreliability is also introduced. Thus, wireless communication combined with in-situ processing of data would significantly improve the ability to include sensors into high temperature systems and thus lead toward more intelligent engine systems. NASA Glenn Research Center (GRC) is presently leading the development of electronics, communication systems, and sensors capable of prolonged stable operation in harsh 500C environments. This has included world record operation of SiC-based transistor technology (including packaging) that has demonstrated continuous electrical operation at 500C for over 2000 hours. Based on SiC electronics, development of high temperature wireless communication has been on-going. This work has concentrated on maturing the SiC electronic devices for communication purposes as well as the passive components such as resistors and capacitors needed to enable a high temperature wireless system. The objective is to eliminate wires associated with high temperature sensors which add weight to a vehicle and can be a cause of sensor unreliability. This paper discusses the development of SiC based electronics and wireless communications technology for harsh environment applications such as propulsion health management systems and in Venus missions. A brief overview of the future directions in sensor technology is given including maturing of near-room temperature "Lick and Stick" leak sensor technology for possible implementation in the Crew Launch Vehicle program. Then an overview of high temperature electronics and the development of high temperature communication systems is presented. The maturity of related technologies such as sensor and packaging will also be discussed. It is concluded that a significant component of efforts to improve the intelligence of harsh environment operating systems is the development and implementation of high temperature wireless technology

Hunter, G. W.↗

Evaluation of high temperature dielectric films for high voltage power electronic applications

Three high temperature films, polyimide, Teflon perfluoroalkoxy and poly-P-xylene, were evaluated for possible use in high voltage power electronic applications, such as in high energy density capacitors, cables and microelectronic circuits. The dielectric properties, including permittivity and dielectric loss, were obtained in the frequency range of 50 Hz to 100 kHz at temperatures up to 200 C. The dielectric strengths at 60 Hz were determined as a function of temperature to 250 C. Confocal laser microscopy was performed to diagnose for voids and microimperfections within the film structure. The results obtained indicate that all films evaluated are capable of maintaining their high voltage properties, with minimal degradation, at temperatures up to 200 C. However, above 200 C, they lose some of their electrical properties. These films may therefore become viable candidates for high voltage power electronic applications at high temperatures.

Suthar, J. L.↗

Effects of electron irradiation on high temperature superconductors and contacts to high temperature superconductors

The discovery of a new class of ceramic superconductors with transition temperatures above liquid nitrogen has opened the doors for exciting space applications. Energy storage, pointing maneuvers, magnetic shielding, and sensitive detection of electromagnetic radiation are some of the longer term possible applications. One near term application involves low electrical resistance, high thermal resistance connections between a detector operating at approximatly or equal to 4 and the electronics operating at approximatly or equal to 77 K. The new high temperature superconductors could accomplish this providing the necessary electrical connections to the ground plane while isolating the system thermally, thus prolonging the life of the mission. With such possibilities it is clearly of value to study the effects of radiation that would be experienced during a typical space mission. In this work we focused specifically on the effects of the electron radiation environment.

Caton, Randall↗

Thermally Stable Ohmic Contacts on Silicon Carbide Developed for High- Temperature Sensors and Electronics

The NASA aerospace program, in particular, requires breakthrough instrumentation inside the combustion chambers of engines for the purpose of, among other things, improving computational fluid dynamics code validation and active engine behavioral control (combustion, flow, stall, and noise). This environment can be as high as 600 degrees Celsius, which is beyond the capability of silicon and gallium arsenide devices. Silicon-carbide- (SiC-) based devices appear to be the most technologically mature among wide-bandgap semiconductors with the proven capability to function at temperatures above 500 degrees Celsius. However, the contact metalization of SiC degrades severely beyond this temperature because of factors such as the interdiffusion between layers, oxidation of the contact, and compositional and microstructural changes at the metal/semiconductor interface. These mechanisms have been proven to be device killers. Very costly and weight-adding packaging schemes that include vacuum sealing are sometimes adopted as a solution.

Okojie, Robert S.↗

Theoretical study of the electron temperature in the high-latitude ionosphere for solar maximum and winter conditions

The T(e) variation in the high-latitude ionosphere at altitudes between 120 and 800 km has been modeled for solar maximum, winter solstice, and strong magnetic activity conditions. The calculated electron temperatures are consistent with the plasma densities and ion temperatures computed from a time-dependent ionospheric model. Heating rates for both solar EUV and auroral precipitation were included. In general, the predicted UT variation of the electron temperature that results from the displacement between the magnetic and geographic poles is only a few hundred degrees. However, in sunlit trough regions, T(e) hot spots develop, and these hot spots show a marked UT variation, by as much as 2500 K. The dominant parameter controlling the T(e) variation above 200 km is the magnetospheric heat flux into the ionosphere, which is essentially unknown. For realistic values of the magnetospheric heat flux, the maximum electron temperature ranges from 5000 to 10,000 K at 800 km. A magnetospheric heat flux is particularly effective in enhancing trough electron temperatures. In general, the electron heat flux at high altitudes is uniquely related to the electron temperature and gradient, except on auroral field lines where thermoelectric heat flow is important.

Schunk, R. W.↗

Optical transmittance of fused silica at elevated temperatures during high energy electron bombardment.

An experimental determination of the optical transmission of Corning 7940 UV and Suprasil I fused silica has been made. The LeRC dynamitron provided the equivalent ionizing radiation and high temperature that the transparent gas divider of an operating nuclear light bulb engine would experience. The irradiation induced absorption was measured at 2150 A, 2700 A, and 4500 A. The length of the irradiations were sufficient so that an equilibrium between radiation induced coloration and high temperature annealing was reached. The experimental results indicate a significant optical absorption, particularly at the shorter wavelength, which would make the use of fused silica in this concept questionable.

Smith, A. B.↗

600 C Logic Gates Using Silicon Carbide JFET's

Complex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.

Neudeck, Philip G.↗