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Spectroscopic signatures of edge states in hexagonal boron nitride
Here, we use Z-contrast imaging and atomically resolved electron energy-loss spectroscopy on an aberration-corrected scanning transmission electron microscope to investigate the local electronic states of boron atoms at different edge structures in monolayer and bilayer h-BN. We find that edges with bonding unsaturated sp2 boron atoms have a unique spectroscopic signature with a prominent pre-peak at ~ 190.2 eV in the B K-edge fine structure. First-principles calculations reveal that the observed pre-peak arises from excitations to the in-plane lowest-energy empty sp 2 boron dangling bonds at the B-terminated edge. This spectroscopic signature can serve as a fingerprint to explore new edge structures in h-BN.
Dynamic Interplay of Nonlocal Recombination Pathways in Quantum Emitters in Hexagonal Boron Nitride
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Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride
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Deep Well Trapping of Hot Carriers in a Hexagonal Boron Nitride Coating of Polymer Dielectrics
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Phase-Inversion Polymer Composite Separators Based on Hexagonal Boron Nitride Nanosheets for High-Temperature Lithium-Ion Batteries
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Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films
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High-Modulus Hexagonal Boron Nitride Nanoplatelet Gel Electrolytes for Solid-State Rechargeable Lithium-Ion Batteries
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Quantum Sensing of Paramagnetic Spins in Liquids with Spin Qubits in Hexagonal Boron Nitride
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