Relationship between spatial and quantitative concepts in students in the fourth to sixth grades
Spatial and quantitative concepts in fourth through sixth grade students
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Spatial and quantitative concepts in fourth through sixth grade students
Perception of spatial relations by sixth grade children during field surveying exercises
Electrical properties of high reliability computer grade miniature capacitors
Renal lymph oxygen tension in dogs during graded renal ischemia
Methods for welding and locally reaging aged 18 percent nickel grade VAR maraging steel
Diagnostic criteria for grading severity of acute motion sickness
Development of general constitutive equation for room temperature mechanical response of nuclear grade graphite
Diagnosis criteria for grading severity of acute motion sickness applicable to empirical evaluation of clinical methods
A method, using IBM cards and computer processing, automates examination grading and recording and permits use of computational problems. The student generates his own answers, and the instructor has much greater freedom in writing questions than is possible with multiple choice examinations.
Aircraft tests on grooved, open graded, and asphalt runways in England
Less severe diagnosis for grading motion sickness susceptibility
For the improvement of rail service, the Department of Transportation, Federal Rail Administration, is sponsoring a test track on the Atchison, Topeka, and Santa Fe Railway. The test track will contain nine separate rail support structures, including one conventional section for control and three reinforced concrete structures on grade, one slab and two beam sections. The analysis and design of these latter structures was accomplished by means of the finite element method, NASTRAN, and is presented.
Three groups of 10 subjects each were exposed to stepwise increments of cross coupled angular accelerations in three visual modes: internal visual reference (IVR), external visual reference (EVR), and vision absent (VA). The subjects in the IVR condition required significantly greater amounts of stimulus exposure to neutralize their illusory subjective reactions. They also suffered a greater loss of well-being and a more marked incidence of motion sickness than did subjects in the EVR and VA conditions. The same 30 subjects were reexposed to the same graded cross coupled stimulation 1 week later. This time, however, all the subjects were tested under only the IVR condition. All three groups showed some positive transfer of adaptation, but only the IVR-IVR combination required significantly fewer head motions to achieve the same level of adaptation on the second occasion. Taken overall, however, the most efficient and least disturbing route to adaptation at the completion of the second test was via the VA-IVR combination.
The mechanisms of plastic fracture (dimpled rupture) in high-purity and commercial 18 Ni, 200 grade maraging steels and quenched and tempered AISI 4340 steels have been studied. Plastic fracture takes place in the maraging alloys through void initiation by fracture of titanium carbo-nitride inclusions and the growth of these voids until impingement results in coalescence and final fracture. The fracture of AISI 4340 steel at a yield strength of 200 ksi occurs by nucleation and subsequent growth of voids formed by fracture of the interface between manganese sulfide inclusions and the matrix. The growth of these inclusion-nucleated voids is interrupted long before coalescence by impingement, by the formation of void sheets which connect neighboring sulfide-nucleated voids.
Cyclic-load crack growth measurements were performed on ASME SA-105 Grade 2 steel specimens exposed to 10,000- and 15,000-psi hydrogen and to 5000-psi helium, all at ambient temperatures. The cyclic-load crack growth rate was found to be faster in high-pressure hydrogen than in helium. Cyclic-load crack growth rates in this steel were not reduced by preloading in air to a stress intensity of 1.5 times the cyclic K sub max in hydrogen. There are indications that holding under load in hydrogen, and loading and unloading in helium retards hydrogen-accelerated cyclic-load crack growth. Cyclic frequency and R (ratio of K sub min/k sub max) were important variables determining crack growth rate. The crack growth rate increased as a logarithm of the cycle duration and decreased with increasing R.
A detailed theoretical analysis of an n-on-p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell yields a maximum air mass zero power conversion efficiency of 17% compared to 9% for a similar GaAs cell. The analysis includes surface and bulk minority carrier recombination, junction recombination current, spectrally varying surface reflection, and series resistance loss. The maximum efficiency is determined for a surface recombination velocity of 10,000 cm/sec and hole and electron diffusion lengths of 2.1 and 7.6 microns, respectively. The improved efficiency is primarily due to a built-in electric field, caused by the band-gap gradation, accelerating photogenerated holes toward the p-n junction. This field reduces the surface and bulk recombination of the holes, and thereby enhances their collection.
Upgrading metallurgical grade silicon is being pursued in four associated areas in order to improve the purity of the normally 98% material. The first two work areas involve purification of raw materials entering the process in addition to upgrading the arc furnace itself. The second two areas of process upgrading comprise improving the purity of the silicon after it leaves the arc furnace by reactive gas blowing and unidirectional freezing. The best cell produced to date was fabricated from MG-Si that had been blown with an O2-Cl2 mixture, unidirectionally solidified, and 6-float-zone passed (to determine a base boron level of 0.04 ohm/cm). The cell showed a 10.7% AMO efficiency. In the other processes category, the use of silicates as a silicon source and of electrolysis as a process were studied. The best electrolytic process uses a 1000 C fused salt of silica in cryolite.
A practical theoretical analysis of an n/p graded band-gap Al(x)Ga(1-x)As-GaAs solar cell indicates that the presence of a built-in electric field acting on holes in the surface layer increases the hole collection efficiency of a nearly optimum cell to a maximum of 97.8%. The electric field is created by the band-gap gradient and serves to reduce the surface hole recombination by 97% and reduce the bulk hole recombination by 80%, compared to a similar GaAs cell. These reduced losses increase cell response substantially for wavelengths less than 0.59 micron and yield a maximum air-mass-zero efficiency of 17.7% (not corrected for a 13% front-surface contact). The model includes an optimized antireflection coating, series resistance, and junction-recombination current.