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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Aliovalent gallium dopants remove Ti 3+ defects and improve photocatalytic and photoelectrochemical water oxidation properties of LaTiO 2 N

LaTiO 2 N is a promising semiconductor for the water splitting reaction due to its 2.1 eV band gap and stability against corrosion. However, its solar energy conversion is limited by Ti 3+ recombination defects introduced during ammonolysis. Here we show for the first time that Ti 3+ defects in LaTiO 2 N can be suppressed with incorporation of 2, 5, and 10% aliovalent gallium (Ga 3+ ) dopants during synthesis via the layered La 2 Ti 2 O 7 intermediate. Electron paramagnetic resonance (EPR) spectroscopy on the solid powders confirms a reduction in the Ti 3+ donor density from 2.97 × 10 17 cm −3 for the non-doped material to ∼6.24 × 10 16 cm −3 for 5% Ga-doped LaTiO 2 N. The remaining Ti 3+ defects are concentrated near the LaTiO 2 N surface, according to X-ray photoelectron spectroscopy. The defect reduction shifts the optical absorption edge from 2.02 to 2.09 eV and eliminates a broad absorption band at 1050 nm from the optical absorption spectra. It also removes a 1.0–1.7 eV sub-band gap photovoltage signal from surface photovoltage spectra. This suggests that empty Ti 3+ d-orbitals are located 1.0–1.7 eV above the LaTiO 2 N valence band edge. Removing these recombination states with increasing Ga 3+ content enhances the photoconversion efficiency of LaTiO 2 N during water oxidation. The optimized 2 wt% CoO x -loaded 5% Ga-doped LaTi O2 N material has a 16% AQE (400 nm) for O 2 production from aqueous silver nitrate solution and a ∼2.1 mA cm −2 water oxidation photocurrent at 1.23 V under 100 mW cm −2 Xe arc lamp illumination. The water oxidation photocurrent is stable during a 50 min test, and the Faraday efficiency for O 2 generation is 97%, confirming short-term corrosion stability of LaTiO 2 N. Altogether, these results provide a better understanding of the distribution, concentration, and impact of Ti 3+ defects on the optical, photovoltage, and photoelectrochemical properties of LaTiO 2 N. In combination with other defect control strategies, aliovalent Ga 3+ doping can help bring the solar energy conversion efficiency of LaTiO 2 N closer to the theoretical limit.

Wang, Li [University of California, Davis, CA (Uni↗
NASA NTRS2017

Elastomeric Sensing of Pressure with Liquid Metal and Wireless Inductive Coupling

This project describes resistance-based soft sensors filled with liquid metal, which permit measurements of large strains (0 percent to 110 percent), associated with small forces of less than 30 Newtons. This work also demonstrates a methodology for wireless transfer of these strain measurements without connected electrodes. These sensors allow intermittent detection of pressure on soft membranes with low force. Adapting these sensors for passive wireless pressure sensing will eliminate the need for embedded batteries, and will allow the sensors to transmit pressure data through non-conductive materials including glass and acrylic. The absence of batteries allows us to embed these sensors into materials for long-term use because the sensors only use passive analog circuit elements. We found the oxidation of the liquid metal (eutectic gallium indium) plays a role in the repeatability of the soft sensors. We investigated how the oxidation layer affected the behavior of the sensor by encapsulating materials (silicone, fluorosilicone, and PVC) with varied permeabilities to oxygen. We measured the effects of mechanical loading on the oxidation layer and the effects of wireless inductive coupling on the oxidation layer. We concluded our research by investigating the effects of embedding self-resonant circuits into polydimethylsiloxane (PDMS). Efforts to design engineered systems with soft materials are a growing field with progress in soft robotics, epidermal electronics, and wearable electronics. In the field of soft robotics, PDMS-based grippers are capable of picking up delicate objects because their form-fitting properties allow them to conform to the shape of objects more easily than conventional robotic grippers. Epidermal devices also use PDMS as a substrate to hold electronic components such as radios, sensors, and power supply circuits. Additionally, PDMS-based soft sensors can monitor human motion with liquid metal embedded within micro-channels. Passive wireless sensors have applications in structural health monitoring and medical health monitoring. Doctors can take wireless blood pressure measurements inside arteries to monitor the progression of heart disease. Glaucoma patients can use this technology to monitor the pressure in their eyes to track the progression of the disease.

Dick, Jacob↗
DOE OSTI2021

Compact Solid-State High-Voltage Switch

Researchers at Sandia have developed a semiconductor-based high-voltage switch, with experimental results showing potential for enhanced radiation hardness, for use in multiple power conversion applications. Gallium nitride (GaN) metal-oxide semiconductor field effect transistors (MOSFETs) were modeled using commercial and Sandia CHARON simulation software to understand their performance and for future prediction of device operation in radiation environments.

42 ENGINEERING↗
DOE OSTI2023

1 kV GaN-on-Si Quasi-Vertical Schottky Rectifier

Here, this work demonstrates quasi-vertical GaN Schottky barrier diodes (SBDs) on 6-inch Si substrate with a breakdown voltage (BV) over 1 kV, the highest BV reported in vertical GaN-on-Si SBDs to date. The deep mesa inherently in quasi-vertical devices is leveraged to form a self-aligned edge termination, and the mesa sidewall is covered by the p-type nickel oxide (NiO) as a reduced surface field (RESURF) structure. This novel termination enables a parallel-plane junction electric field of 2.8 MV/cm. The device also shows low turn-on voltage of 0.5 V, and low specific on-resistance of 1.1 mΩ∙ cm 2 . Moreover, the device exhibits excellent overvoltage robustness under the continuous 800 V stress in the unclamped inductive switching test. These results show the good promise of the low-cost vertical GaN-on-Si power diodes.

42 ENGINEERING↗
DOE OSTI2023

Assessing the Behavior of Moderately Volatile Elements on the Moon in Order to Constrain Processes of Magmatic Evolution and Planetary Accretion

Heterogeneous isotopic compositions of Zn and Ga in lunar basalts and highlands rocks indicate that secondary processing affected the stable isotopic composition of major lunar reservoirs. It follows that these fractionating processes must be identified and characterized in order to make robust estimates for the isotopic composition of the mare basalt source regions or the bulk silicate Moon (BSM). Contrary to previous assertions (e.g., Kato & Moynier, 2017), MVEs such as Zn and Ga do not behave similarly on the Moon, in line with differences in their chemical behavior and volatility. There is clear evidence that impact reworking fractionates zinc isotopes but, in addition, zinc isotopes are also highly sensitive to the formation of Ti-bearing oxides such as ilmenite. In contrast, gallium is far less susceptible to volatile reworking, but its isotopic composition is fractionated during incorporation into plagioclase (Wimpenny et al., 2022; Render et al., 2023). Based on these findings we conclude that current isotopic compositions of Zn and Ga in lunar rocks, such as those measured for the mare basalt suite, are unlikely to be representative of the bulk Moon when it accreted. As such, estimates for the MVE isotopic composition of the BSM derived from mare basalts may not be accurate, which may have implications for the incorporation of these data into dynamical models of the Moon’s formation. In the following, we discuss the main findings from this project in more detail, focusing on the behaviour of zinc and gallium isotopic systematics in lunar rocks and the processes that control their isotopic fractionation on the Moon.

58 GEOSCIENCES↗
NASA NTRS1991

The effect of process conditions on the performance of epitaxial InP solar cells

Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

Borrego, J. M.↗
NASA NTRS1982

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗
DOE OSTI2019

Behavior of Ga, In, Sn, and Te in Copper Matte Smelting

The distributions of Ga, In, Sn, and Te between copper-iron mattes and silica-saturated iron silicate slags over a wide range of matte grades 55 to 75 pct Cu were determined at 1300 °C using a gas-phase equilibration-quenching technique and direct phase composition analysis by Electron Probe X-ray Microanalysis and Laser Ablation-Inductively Coupled Plasma-Mass Spectrometry. Alumina from aluminum, a typical minor element of electric and electronic copper scrap, and lime were adopted as slag modifiers for increasing the trace element recoveries. Gallium and tin were distributed predominantly in the slag, indium preferred sulfide matte at low matte grades and slag at high, whereas tellurium strongly favored the sulfide matte in particular in high matte grades. The slag modifiers alumina and lime had a minor impact on the distribution coefficients of gallium and tin, but for indium and tellurium the distribution coefficients were more strongly affected by the basic oxides. The strong tendencies of tin and tellurium to vaporize at the experimental temperature were confirmed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Are Contact Angle Measurements Useful for Oxide-Coated Liquid Metals?

This work establishes that static contact angles for gallium-based liquid metals have no utility despite the continued and common use of such angles in the literature. In the presence of oxygen, these metals rapidly form a thin (~1–3 nm) surface oxide “skin” that adheres to many surfaces and mechanically impedes its flow. This property is problematic for contact angle measurements, which presume the ability of liquids to flow freely to adopt shapes that minimize the interfacial energy. We show here that advancing angles for a metal are always high (>140°)—even on substrates to which it adheres—because the solid native oxide must rupture in tension to advance the contact line. The advancing angle for the metal depends subtly on the substrate surface chemistry but does not vary strongly with hydrophobicity of the substrate. During receding measurements, the metal droplet initially sags as the liquid withdraws from the “sac” formed by the skin and thus the contact area with the substrate initially increases despite its volumetric recession. Furthermore, the oxide pins at the perimeter of the deflated “sac” on all the surfaces are tested, except for certain rough surfaces. With additional withdrawal of the liquid metal, the pinned angle gets smaller until eventually the oxide “sac” collapses. Thus, static contact angles can be manipulated mechanically from 0° to >140° due to hysteresis and are therefore uninformative. We also provide recommendations and best practices for wetting experiments, which may find use in applications that use these alloys such as soft electronics, composites, and microfluidics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Rigorous Oxidation State Assignments for Supported Ga-Containing Catalysts Using Theory-Informed X-ray Absorption Spectroscopy Signatures from Well-Defined Ga(I) and Ga(III) Compounds

Gallium-based heterogeneous catalysts originally developed for commercial use in propane dehydroaromatization have been explored extensively as potential replacements for Pt- and Cr-based catalysts used in propane dehydrogenation for on-demand propylene production. In a large number of experimental and theoretical studies, active sites with a variety of Ga nuclearities, coordination environments, and oxidation states have been proposed. Isolated Ga(I) ions are often invoked, despite the scarcity of well-defined molecular species and their well-documented instability. In this study, we investigate the appearance of a high-intensity, low-energy white line at the Ga K-edge upon reduction of Ga/HZSM-5 by H 2 at a temperature of ca. 500 °C, accompanied by a dramatic reduction in the extended X-ray absorption fine structure (EXAFS) intensity. In contrast, Ga/γ-Al 2 O 3 does not show such behavior. In order to lay a rigorous foundation for characterizing these types of systems and to establish experimental signatures for the elusive Ga(I) oxidation state, we recorded Ga K-edge X-ray absorption spectra [including high-energy-resolution fluorescence detection-X-ray absorption near-edge spectroscopy (HERFD-XANES)] for several well-defined molecular and crystalline Ga(I) compounds. XANES is essential to establishing the presence of Ga(I), despite the overlap in edge energies with organoGa(III) compounds, because Ga(I)-containing oxide materials show very weak EXAFS scattering. Compared to the XANES of trigonal Ga(III)-containing materials, Ga(I) spectra display a significantly more intense white line feature. Theoretical simulations agree well with this experimental observation and reveal that the strong XANES intensity originates from the superposition of transitions to several empty, nearly degenerate p-like states. Finally, these signatures provide compelling evidence for assigning the intense white line and dramatic loss of EXAFS intensity in Ga/HZSM-5 to the near-quantitative reduction of Ga(III) to Ga(I), while the weaker white line and conventional EXAFS signal of Ga/γ-Al 2 O 3 point to, at most, a minor fraction of Ga(I) sites.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Optomechanical ring resonator for efficient microwave-optical frequency conversion

Phonons traveling in solid-state devices are emerging as a universal excitation for coupling different physical systems. Phonons at microwave frequencies have a similar wavelength to optical photons in solids, enabling optomechanical microwave-optical transduction of classical and quantum signals. It becomes conceivable to build optomechanical integrated circuits (OMIC) that guide both photons and phonons and interconnect photonic and phononic devices. Here, we demonstrate an OMIC including an optomechanical ring resonator (OMR), where co-resonant infrared photons and GHz phonons induce significantly enhanced interconversion. The platform is hybrid, using wide bandgap semiconductor gallium phosphide (GaP) for waveguiding and piezoelectric zinc oxide (ZnO) for phonon generation. The OMR features photonic and phononic quality factors of >1 × 10 5 and 3.2 × 10 3 , respectively. The optomechanical interconversion between photonic modes achieved an internal conversion efficiency $η_i$ = (2.1 ± 0.1)% and a total device efficiency $η_{tot}$ = 0.57 x 10 -6 at a low acoustic pump power of 1.6 mW. The efficient conversion in OMICs enables microwave-optical transduction for quantum information and microwave photonics applications.

42 ENGINEERING↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
NASA NTRS1988

Diffraction imaging (topography) with monochromatic synchrotron radiation

Structural information of special interest to crystal growers and device physicists is now available from high resolution monochromatic synchrotron diffraction imaging (topography). In the review, the importance of superior resolution in momentum transfer and in space is described, and illustrations are taken from a variety of crystals: gallium arsenide, cadmium telluride, mercuric iodide, bismuth silicon oxide, and lithium niobate. The identification and understanding of local variations in crystal growth processes are shown. Finally, new experimental opportunities now available for exploitation are indicated.

Steiner, Bruce↗
DOE OSTI2020

Article with buffer layer

An article, for example a solar cell, includes a first substrate having a first surface and a second surface. An underlayer is located over the second surface. A first conductive layer is located over the underlayer. An overlayer is located over the first conductive layer. A semiconductor layer is located over the conductive oxide layer. A second conductive layer is located over the semiconductor layer. The first conductive layer can include a conductive oxide and at least one dopant selected from the group consisting of tungsten, molybdenum, niobium, and/or fluorine. The overlayer can include a buffer layer having tin oxide and at least one of zinc, indium, gallium, and magnesium.

14 SOLAR ENERGY↗
DOE OSTI2023

Reliable bi-functional nickel-phosphate /TiO2 integration enables stable n-GaAs photoanode for water oxidation under alkaline condition

Abstract Hydrogen is one of the most widely used essential chemicals worldwide, and it is also employed in the production of many other chemicals, especially carbon-free energy fuels produced via photoelectrochemical (PEC) water splitting. At present, gallium arsenide represents the most efficient photoanode material for PEC water oxidation, but it is known to either be anodically photocorroded or photopassivated by native metal oxides in the competitive reaction, limiting efficiency and stability. Here, we report chemically etched GaAs that is decorated with thin titanium dioxide (~30 nm-thick, crystalline) surface passivation layer along with nickel-phosphate (Ni-Pi) cocatalyst as a surface hole-sink layer. The integration of Ni-Pi bifunctional co-catalyst results in a highly efficient GaAs electrode with a ~ 100 mV cathodic shift of the onset potential. In this work, the electrode also has enhanced photostability under 110 h testing for PEC water oxidation at a steady current density J ph > 25 mA·cm −2 . The Et-GaAs/TiO 2 /Ni-Pi║Ni-Pi tandem configuration results in the best unassisted bias-free water splitting device with the highest J ph (~7.6 mA·cm −2 ) and a stable solar-to-hydrogen conversion efficiency of 9.5%.

08 HYDROGEN↗