Gallium arsenide injection laser radar.
Range capability of gallium arsenide injection LIDAR against extended targets and corner reflectors under both negligible and high background radiation conditions
GALLIUM ARSENIDE↗
SEARCH · Engineering Papers
Results for “gallium”
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Body of Knowledge for Gallium Nitride Power Electronics
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.
Gallium Nitride Power Electronics↗
LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
A better understanding of the linear energy transfer and range of proton recoil ions in gallium nitride (GaN) is provided to facilitate proper evaluation of GaN device radiation tolerance.
gallium nitride (GaN)↗
LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)
A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.
gallium nitride (GaN)↗
Polycrystalline Thin-Film Research: Copper Indium Gallium Diselenide
Copper indium gallium diselenide (CIGS) solar cells are one of the primary focuses of research by the Thin Film Material Science and Processing Group. The group develops processes and materials related to thin-film polycrystalline photovoltaic (PV) devices as well as the equipment required for routine analysis of these devices and materials. We work closely with other groups in the Materials Science Center to achieve a deeper understanding of thin-film materials and devices.
capabilities↗
Accelerated Beta Radiation Aging of Interlayer Titanium Nitride in Gallium Nitride Contacts
Research conducted under the Laboratory Directed Research and Development Program at Pacific Northwest National Laboratory, a multiprogram national laboratory operated by Battelle for the U.S. Department of Energy. An NNSS author co-authored this paper, and portions of this work were supported by the Mission Support and Test Services, LLC, under Contract No. DE-NA0003624 with the U.S. Department of Energy, National Nuclear Security Administration, NA-10 USDOE NA Office of Defense Programs (NA-10). PNNL-SA-163618 Currently, there is no good way to determine the influence of radiation on the aging of betavoltaic electrical contacts. This work tested a method to accelerate the aging of the contacts inside a betavoltaic by enhancing energy deposition within the interfacial region of interest. An electrical contact of gold-titanium on gallium nitride was aged by exposure to tritium betas and electrons in a beamline. The interface stoichiometry was compared to the electrical performance of the contact. The method to age the betavoltaic component could help predict the lifetime performance of the internal electrical contacts and provide assurance of deployment reliability.
36 MATERIALS SCIENCE↗
Impact of Molten Gallium on the Microstructure and Corrosion Behavior of Aluminum and Uranium-Aluminum Alloys for Used Nuclear Fuel Reprocessing
Test reactors around the world utilize highly enriched uranium fuel to achieve high neutron fluxes for materials testing. Once spent, the remaining uranium is a valuable resource for subsequent fuel fabrication. However, some of these test reactor cores consist of curved plate-type fuel elements, fabricated using aluminum alloy 6061 (AA6061) cladding to encapsulate a uranium-aluminum alloy (UAlx) fuel matrix. These assemblies require non-standard reprocessing approaches for uranium recovery, as aluminum dissolves readily in acidic solutions, generating large volumes of waste and complicating downstream chemical separations. In this work, we investigate a novel chemical decladding strategy based on the interaction between AA6061/UAlx and molten gallium (Ga). Ga is known to induce severe degradation of aluminum metal through liquid metal embrittlement (LME), even at relatively low Ga concentrations. By penetrating the aluminum crystal lattice, Ga disrupts grain cohesion and facilitates fracture or dissolution of the aluminum matrix. Thermodynamic analysis of the Al–Ga binary phase diagram suggests that Ga may offer a viable pathway to selectively weaken or dissolve the AA6061 cladding, and potentially the aluminum component of the UAlx fuel matrix within. To this end, parametric experiments were performed at 50 °C and 100 °C across a range of Al–Ga atomic fractions. At lower Al fractions, the AA6061 was completely molten after 2 hours of exposure to the Ga metal. In contrast, samples with higher Al fractions (0.9 Al, 0.1 Ga) contained residual solids after 2 hours, which were characterized by microstructural examination using electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM). These Al-Ga compositions were also evaluated using FactSage thermodynamic modeling to further elucidate the relationship between phase diagram behavior and LME.
11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Broadband Photoconductive Sampling in Gallium Phosphide
Abstract Direct measurements of the electric field of light enable new observations of light–matter interactions. In the near‐infrared and visible spectral ranges, this typically relies on techniques that exploit nonlinearities in gases or solids, which limits their sensitivity. Here, a method for the detection of broadband near‐infrared fields spanning more than one octave from 110 to 220 THz based on linear absorption in a semiconductor is demonstrated. This technique, which avoids complex vacuum setups and works under ambient conditions, employs linear photoconductive sampling (LPS) in gallium phosphide. Simulations reveal that the response function of LPS is concerned with the intensity envelope of the gate field, in contrast to electro‐optic sampling, relaxing the stringent temporal requirements on the gate pulse.
36 MATERIALS SCIENCE↗
Uranium Doped Gallium Nitride Epitaxial Thin Films
Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid-state lighting and high-power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping of most of the elements of the periodic table, but the actinides remain unexplored. Molecular beam epitaxy is used to demonstrate uranium doping of GaN single crystals. High structural quality of the host matrix is maintained despite partial elemental segregation of the uranium dopant into 1D structures at the levels presented here. Electronic transport measurements reveal relatively high conductivity, which persists down to cryogenic temperature and is characterized by the formation of narrow gaps in the electronic band structures very close to the Fermi level. Photoluminescence measurements reveal that the U-doped GaN exhibits optical behavior similar to that of the GaN substrate. The addition of actinide materials to a non-centrosymmetric, optically active, radiation-hard, and electronically tunable host matrix opens a world of possibilities for investigating and leveraging elements with high electron correlations in the pursuit of novel devices.
36 - MATERIALS SCIENCE↗
Surface Energy Modulated Self‐Assembly of Percolative Gallium Nanodroplet Films for Stretchable Electronics
Advancements in soft robotics and wearable technologies have led to an increased need for flexible and stretchable electronic systems. Liquid metals like Gallium (Ga) and its alloys offer high potential in the field of stretchable electronics and photonics due to their inherent high conductivity and malleability. However, their high surface tension and native oxide formation hinder uniform wetting and continuous film formation to get conducting films. Here, we report a fabrication strategy to realize electrically conductive Ga thin films with effective thicknesses around 100 nm on polymeric and elastomeric substrates. By enhancing the surface energy of the elastomer, we create uniform Ga nanodroplets capable of sustaining stretchability up to 200% strain. Our devices exhibit electronic conduction primarily through tunneling and display strain tunable piezoresistive characteristics, which are explained using Kirchhoff's resistive network and Simmon's analytical tunneling current model. To showcase the device's capability in fields of stretchable electronics, we demonstrate several functional prototypes, including flexible devices integrated with Light Emitting Diodes (LEDs), curvature and pressure sensors, and soft robotic grippers capable of sensing object curvature. The demonstrated devices highlight the potential of this approach for scalable integration of stretchable electronics in soft robotic and wearable platforms.
42 ENGINEERING↗
Ethylene Dehydroaromatization over Ga‐ZSM‐5 Catalysts: Nature and Role of Gallium Speciation
Abstract Bifunctional catalysis in zeolites possessing both Brønsted and Lewis acid sites offers unique opportunities to tailor shape selectivity and enhance catalyst performance. Here, we examine the impact of framework and extra‐framework gallium species on enriched aromatics production in zeolite ZSM‐5. We compare three distinct methods of preparing Ga‐ZSM‐5 and reveal direct (single step) synthesis leads to optimal catalysts compared to post‐synthesis methods. Using a combination of state‐of‐the‐art characterization, catalyst testing, and density functional theory calculations, we show that Ga Lewis acid sites strongly favor aromatization. Our findings also suggest Ga(framework)–Ga(extra‐framework) pairings, which can only be achieved in materials prepared by direct synthesis, are the most energetically favorable sites for reaction pathways leading to aromatics. Calculated acid site exchange energies between extra‐framework Ga at framework sites comprised of either Al or Ga reveal a site‐specific preference for stabilizing Lewis acids, which is qualitatively consistent with experimental measurements. These findings indicate the possibility of tailoring Lewis acid siting by the placement of Ga heteroatoms at distinct tetrahedral sites in the zeolite framework, which can have a marked impact on catalyst performance relative to conventional H‐ZSM‐5.
Zhou, Yunwen↗
Efficacy of Gadolinium Gallium Garnet (GGG) as a High-Impedance Optical Window for Shock Wave Experiments
We conducted a series of plate impact experiments to examine the efficacy of < 111>-oriented gadolinium gallium garnet (GGG) single crystals as high-impedance optical window for Photonic Doppler velocimetry (PDV) under shock and double-shock loading. At ~ 123 GPa, shocked GGG remains fully transparent to 1550 nm light for at least 250 ns without any signal degradation. Above 135 GPa, PDV data measured through GGG exhibit a gradual loss of fringe contrast following shock entrance, which eventually leads to transparency loss. The duration for which shocked GGG remains transparent decreases with increasing pressure, and at ~ 148 GPa, it becomes opaque within ~ 20–30 ns. This limits the use of GGG as an interferometry window between ~ 110–140 GPa under single shock loading. Within this pressure range, the refractive index of GGG increases linearly with density: n = 1.552 + 0.054ρ. In contrast to single shock loading, where GGG becomes opaque rapidly above ~ 140 GPa, double-shocked GGG remains optically transparent for over 100 ns when it is first shocked to ~ 123 GPa and then reshocked to significantly higher pressures (215–233 GPa). Our findings raise the exciting possibility of GGG being used as a high-impedance optical window in multi-shock and shock-ramp loading experiments.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Constraining the behavior of gallium isotopes during evaporation at extreme temperatures
Renewed interest in gallium isotope systematics has stemmed from the fact that Ga is moderately volatile and is hypothesized to undergo kinetic fractionation during evaporation. In this work, we present the first Ga isotope data from terrestrial volatile depleted samples including a suite of experimentally heated rhyolitic soils, fallout melt glass, and splash-form tektites from the Australasian strewn field (hereafter termed australite tektites). The Ga in these samples is isotopically heavy compared to Ga in terrestrial basalts and estimates for the composition of the bulk silicate Earth (BSE). For each sample suite the isotopic fractionation of Ga scales with the degree of Ga depletion, consistent with isotopic fractionation caused by evaporation.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
X-ray topography characterization of gallium nitride substrates for power device development
Gallium nitride substrates grown by the hydride vapor phase epitaxy (HVPE) method using a patterned growth process have been characterized by synchrotron monochromatic beam X-ray topography in the grazing incidence geometry. Images reveal a starkly heterogeneous distribution of dislocations with areas as large as 0 3 mm 2 containing threading dislocation densities below 10 3 cm -2 in between a grid of strain centers with higher threading dislocation densities (> 10 4 cm -2 ). Basal plane dislocation densities in these areas are as low as 104 cm -2 . By comparing the recorded images of dislocations with ray tracing simulations of expected dislocations in GaN, the Burgers vectors of the dislocations have been determined. The distribution of threading screw/mixed dislocations (TSDs/TMDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) is discussed with implications for fabrication of power devices.
36 MATERIALS SCIENCE↗
Radiation hard gallium oxide scintillators for high count rate radiation detection
Despite decades of materials research, the availability of appropriate crystalline radiation-hard scintillators with ultrafast decay times (~10ns) and high light yields (>2000 ph/MeV) are still limited. In this study, we demonstrate the potential of gallium oxide (β-Ga 2 O 3 ) based scintillators for high count rate applications. The low-cost rugged β-Ga 2 O 3 scintillators were grown using the optical float zone (FZ) technique. Several dopants and growth atmospheres were used to demonstrate the balance between ultrafast primary decay time and the light yield of the scintillators. Light yields as high as 6446 ± 716 ph/MeV were obtained with 18.3 ns decay time for 662 keV gamma rays. Decay times as fast as 12ns were obtained with a 3212 ± 357 ph/MeV light yield. An excellent 662 keV gamma energy resolution of 7% was obtained using the β-Ga 2 O 3 :Ce crystals. Even with these excellent scintillation properties, the gamma radiation hardness of β-Ga 2 O 3 crystals was better than the leading radiation-hard lead tungstate (PbWO 4 ) crystals. Twenty-six scintillators fabricated from the grown β-Ga 2 O 3 crystals were tested for radiation hardness with a 60 Co gamma irradiation rate of 14 krad/h with a total radiation dose of 2 Mrad. The scintillation properties of these crystals remained unaffected. To date, no other scintillator has demonstrated such high radiation resistance. Furthermore, these FZ-grown low-cost, non-hygroscopic, and high-density β-Ga 2 O 3 scintillators can replace the existing scintillators in many applications ranging from nuclear and high energy physics experiments to nuclear security.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
The gallium anomaly
In order to test the end-to-end operations of gallium solar neutrino experiments, intense electron-capture sources were fabricated to measure the responses of the radiochemical SAGE and GALLEX/GNO detectors to known fluxes of low-energy neutrinos. Such tests were viewed at the time as a cross-check, given the many tests of 71 Ge recovery and counting that had been routinely performed, with excellent results. However, the four 51 Cr and 37 Ar source experiments yielded rates below expectations, a result commonly known as the Ga anomaly. As the intensity of the electron-capture sources can be measured to high precision, the neutrino lines they produce are fixed by known atomic and nuclear rates, and the neutrino absorption cross section on 71 Ga is tightly constrained by the lifetime of 71 Ge, no simple explanation for the anomaly has been found. To check these calibration experiments, a dedicated experiment BEST was performed, utilizing a neutrino source of unprecedented intensity and a detector optimized to increase statistics while providing some information on counting rate as a function of distance from the source. The results BEST obtained are consistent with the earlier solar neutrino calibration experiments, and when combined with those measurements, yield a Ga anomaly with a significance of approximately 4𝜎, under conservative assumptions. But BEST found no evidence of distance dependence and thus no explicit indication of new physics. In this review we describe the extensive campaigns carried out by SAGE, GALLEX/GNO, and BEST to demonstrate the reliability and precision of their experimental procedures, including 71 Ge recovery, counting, and analysis. We also describe efforts to define uncertainties in the neutrino capture cross section, which now include estimates of effects at the ≲ 0.5% level such as radiative corrections and weak magnetism. With the results from BEST, an anomaly remains even if one retains only the transition to the 71 Ge ground state, whose strength is fixed by the known lifetime of 71 Ge. We then consider the new-physics solution most commonly suggested to resolve the Ga anomaly, oscillations into a sterile fourth neutrino, 𝜈 𝑒 → 𝜈 𝑠 . We find such a solution generates substantial tension with several null experiments, owing to the large mixing angle required. While this does not exclude such solutions – the sterile sector might include multiple neutrinos as well as new interactions – it shows the need for more experimental constraints, if we are to make progress in resolving the Ga and other low-energy neutrino anomalies. We conclude by consider the role future low-energy electron-capture sources could play in this effort.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Engineering new limits to magnetostriction through metastability in iron-gallium alloys
Magnetostrictive materials transduce magnetic and mechanical energies and when combined with piezoelectric elements, evoke magnetoelectric transduction for high-sensitivity magnetic field sensors and energy-efficient beyond-CMOS technologies. The dearth of ductile, rare-earth-free materials with high magnetostrictive coefficients motivates the discovery of superior materials. Fe 1- x Ga x alloys are amongst the highest performing rare-earth-free magnetostrictive materials; however, magnetostriction becomes sharply suppressed beyond x = 19% due to the formation of a parasitic ordered intermetallic phase. Here, we harness epitaxy to extend the stability of the BCC Fe 1- x Ga x alloy to gallium compositions as high as x = 30% and in so doing dramatically boost the magnetostriction by as much as 10x relative to the bulk and 2x larger than canonical rare-earth based magnetostrictors. A Fe 1- x Ga x - [Pb(Mg 1/3 Nb 2/3 )O 3 ] 0.7 -[PbTiO 3 ] 0.3 (PMN-PT) composite magnetoelectric shows robust 90° electrical switching of magnetic anisotropy and a converse magnetoelectric coefficient of 2.0 × 10 -5 s m -1 . When optimally scaled, this high coefficient implies stable switching at ~80 aJ per bit.
36 MATERIALS SCIENCE↗
Gallium phosphide optical metasurfaces for visible light applications
There are few materials that are broadly used for fabricating optical metasurfaces for visible light applications. Gallium phosphide (GaP) is a material that, due to its optical properties, has the potential to become a primary choice but due to the difficulties in fabrication, GaP thin films deposited on transparent substrates have never been exploited. In this article we report the design, fabrication, and characterization of three different amorphous GaP metasurfaces obtained through sputtering. Although the material properties can be further optimized, our results show the potential of this material for visible applications making it a viable alternative in the material selection for optical metasurfaces.
36 MATERIALS SCIENCE↗