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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Apparatus description and data analysis of a radiometric technique for measurements of spectral and total normal emittance

The development of a radiometric technique for determining the spectral and total normal emittance of materials heated to temperatures of 800, 1100, and 1300 K by direct comparison with National Bureau of Standards (NBS) reference specimens is discussed. Emittances are measured over the spectral range of 1 to 15 microns and are statistically compared with NBS reference specimens. Results are included for NBS reference specimens, Rene 41, alundum, zirconia, AISI type 321 stainless steel, nickel 201, and a space-shuttle reusable surface insulation.

Edwards, S. F.↗
NASA NTRS1977

A low cost, portable instrument for measuring emittance

A low cost, portable instrument was developed with which emittance can be measured by comparison to a standard. A reflector collects infrared radiation from a heated sample onto a low mass, black detector and the temperature rise of the black detector is measured with a thermocouple and meter. Graphical examples are presented for determination of emittance from measurements made on a sample at any known temperature.

Mcdonald, G.↗
NASA NTRS1977

A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devices

An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.

Lindholm, F. A.↗
NASA NTRS1977

A low cost, portable instrument for measuring emittance

A low cost, portable instrument has been developed with which emittance can be measured by comparison to a standard. A reflector collects infra-red radiation from a heated sample onto a low mass, black detector and the temperature rise of the black detector is measured with a thermocouple and meter. Graphical examples are presented for determination of emittance from measurements made on a sample at any known temperature.

Mcdonald, G.↗
NASA NTRS1977

Effects of atmosphere, temperature and emittance on reflected and emitted energy

Atmospheric effects were taken into account in a study of the variation of energy reflected and energy emitted from a natural target under several conditions of temperature and emittance. For the study, atmospheric transmittance was represented through use of an empirical midlatitude summer model. Results showed that the ratio of energy emitted to energy reflected from a target is much less than unity at 3.5 microns, equal to unity at 4 microns, and much greater than unity at 4.6 microns (for high temperatures and emittances). These theoretical findings agreed closely with spectroradiometric data on soils.

Kumar, R.↗
NASA NTRS1979

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗
NASA NTRS1981

Adjustable high emittance gap filler

A flexible, adjustable refractory filler is disclosed for filling gaps between ceramic tiles forming the heat shield of a space shuttle vehicle, to protect its aluminum skin during atmospheric reentry. The easily installed and replaced filler consists essentially of a strip of ceramic cloth coated, at least along both its longitudinal edges with a room temperature vulcanizable silicone rubber compound with a high emittance colored pigment. The filler may have one or more layers as the gap width requires. Preferred materials are basket weave aluminoborosilicate cloth, and a rubber compounded with silicon tetraboride as the emittance agent and finely divided borosilicate glass containing about 7.5% B2O3 as high temperature binder. The filler cloth strip or tape is cut to proper width and length, inserted into the gap, and fastened with previously applied drops of silicone rubber adhesive.

Leiser, D. B.↗
NASA NTRS1986

Oxidation and emittance of superalloys in heat shield applications

Recently developed superalloys that form alumina coatings have a high potential for heat shield applications for advanced aerospace vehicles at temperatures above 1095C. Both INCOLOY alloy MA 956 (of the Inco Alloys International, Inc.), an iron-base oxide-dispersion-strengthened alloy, and CABOT alloy No. 214 (of the Cabot Corporation), an alumina-forming nickel-chromium alloy, have good oxidation resistance and good elevated temperature strength. The oxidation resistance of both alloys has been attributed to the formation of a thin alumina layer (alpha-Al2O3) at the surface. Emittance and oxidation data were obtained for simulated Space Shuttle reentry conditions using a hypersonic arc-heated wind tunnel. The surface oxides and substrate alloys were characterized using X-ray diffraction and scanning and transmission electron microscopy with an energy-dispersive X-ray analysis unit. The mass loss and emittance characteristics of the two alloys are discussed.

Wiedemann, K. E.↗
NASA NTRS1990

Study of a cesium plasma as a selective emitter for thermophotovoltaic applications

This experimental study evaluates the potential of a cesium plasma as an emitter for a thermophotovoltaic (TPV) energy conversion system. A cesium plasma, as a result of the ground-state transitions of its single outer-shell electron, produces large amounts of radiation in the 850-890-nm wavelength region. This would provide excellent coupling to silicon, gallium arsenide, and indium phosphide photovoltaic cells. Measurements of the radiative efficiency, the sum of the power at the 852 and 894 nm wavelengths relative to the total emitted power, were made and correlated to the plasma operating variables. It was determined that, for atomic density in the range (3-6) x 10 exp 21/cu cm and electron temperature in the range 2000-3000 K, radiative efficiencies in excess of 70 percent are attainable. This would indicate that a cesium plasma with its selective emission characteristics and low electron operating temperatures of 2000-3000 K would be an excellent candidate as an emitter in a TPV system.

Lowe, R.↗
NASA NTRS1991

Estimation of emittances and surface temperatures from AVHRR data

An approach to the estimation of surface temperatures and emissivities using AVHRR (Advanced Very High Resolution Radiometer) data acquired near noon is presented. Thermal data in channels 3, 4, and 5 were used to estimate the reflective component in 3. For three water bodies in Oregon the average emittances found for channels 3 and 4 were 0.979 and 0.991, respectively. Also studied were agricultural sites and forests, comprising both primary (PF) and secondary (SF) types. For the agricultural sites, the average emittances were 0.919 and 0.943 for channels 3 and 4. For the PF and SF the results were 0.976 and 0.983 for channel 3 and 0.988 and 0.995 for channel 4.

Schutt, John B.↗
NASA NTRS1954

Some Effects of Exposure to Exhaust-gas Streams on Emittance and Thermoelectric Power of Bare-wire Platinum Rhodium - Platinum Thermocouples

Thermocouples were exposed to exhaust gases from the combustion of propane, 72-octane gasoline, and JP-4 fuel. Exposure increased the emissivity of the thermocouple wire, which increased its radiation error. Two methods are presented for determining the emittance of the wires. The emissivity of a clean platinum rhodium-platinum thermocouple was approximately 0.2 in the temperature range investigated, while the emittance of an exposed thermocouple coated with exhaust residue was about 0.5. The exposure caused negligible change in the thermoelectric power of the thermocouples.

Glawe, George E↗
NASA NTRS1994

Determining Directional Emittance With An Infrared Imager

Directional emittances of flat specimen of smooth-surfaced, electrically nonconductive material at various temperatures computed from measurements taken by infrared radiometric imager operating in conjunction with simple ancillary equipment. Directional emittances useful in extracting detailed variations of surface temperatures from infrared images of curved, complexly shaped other specimens of same material. Advantages: simplification of measurement procedure and reduction of cost.

Daryabeigi, Kamran↗
NASA NTRS2001

Selective Emitter Pumped Rare Earth Laser

A selective emitter pumped rare earth laser provides an additional type of laser for use in many laser applications. Rare earth doped lasers exist which are pumped with flashtubes or laser diodes. The invention uses a rare earth emitter to transform thermal energy input to a spectral band matching the absorption band of a rare earth in the laser in order to produce lasing.

Chubb, Donald L.↗
NASA NTRS1999

Effects Investigated of Ambient High-Temperature Exposure on Alumina-Titania High-Emittance Surfaces for Solar Dynamic Systems

Solar-dynamic space power systems require durable, high-emittance surfaces on a number of critical components, such as heat receiver interior surfaces and parasitic load radiator (PLR) elements. An alumina-titania coating, which has been evaluated for solar-dynamic heat receiver canister applications, has been chosen for a PLR application (an electrical sink for excess power from the turboalternator/compressor) because of its demonstrated high emittance and high-temperature durability in vacuum. Under high vacuum conditions (+/- 10(exp -6) torr), the alumina-titania coating was found to be durable at temperatures of 1520 F (827 C) for approx. 2700 hours with no degradation in optical properties. This coating has been successfully applied to the 2-kW solar-dynamic ground test demonstrator at the NASA Lewis Research Center, to the 500 thermal-energy-storage containment canisters inside the heat receiver and to the PLR radiator. The solar-dynamic demonstrator has successfully operated for over 800 hours in Lewis large thermal/vacuum space environment facility, demonstrating the feasibility of solar-dynamic power generation for space applications.

deGroh, Kim K.↗
NASA NTRS1990

Distributed proximity sensor system having embedded light emitters and detectors

A distributed proximity sensor system is provided with multiple photosensitive devices and light emitters embedded on the surface of a robot hand or other moving member in a geometric pattern. By distributing sensors and emitters capable of detecting distances and angles to points on the surface of an object from known points in the geometric pattern, information is obtained for achieving noncontacting shape and distance perception, i.e., for automatic determination of the object's shape, direction and distance, as well as the orientation of the object relative to the robot hand or other moving member.

Lee, Sukhan↗
NASA NTRS2008

Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

Toda, Risaku↗
NASA NTRS2011

Improved Rare-Earth Emitter Hollow Cathode

An improvement has been made to the design of the hollow cathode geometry that was created for the rare-earth electron emitter described in Compact Rare Earth Emitter Hollow Cathode (NPO-44923), NASA Tech Briefs, Vol. 34, No. 3 (March 2010), p. 52. The original interior assembly was made entirely of graphite in order to be compatible with the LaB6 material, which cannot be touched by metals during operation due to boron diffusion causing embrittlement issues in high-temperature refractory materials. Also, the graphite tube was difficult to machine and was subject to vibration-induced fracturing. This innovation replaces the graphite tube with one made out of refractory metal that is relatively easy to manufacture. The cathode support tube is made of molybdenum or molybdenum-rhenium. This material is easily gun-bored to near the tolerances required, and finish machined with steps at each end that capture the orifice plate and the mounting flange. This provides the manufacturability and robustness needed for flight applications, and eliminates the need for expensive e-beam welding used in prior cathodes. The LaB6 insert is protected from direct contact with the refractory metal tube by thin, graphite sleeves in a cup-arrangement around the ends of the insert. The sleeves, insert, and orifice plate are held in place by a ceramic spacer and tungsten spring inserted inside the tube. To heat the cathode, an insulating tube is slipped around the refractory metal hollow tube, which can be made of high-temperature materials like boron nitride or aluminum nitride. A screw-shaped slot, or series of slots, is machined in the outside of the ceramic tube to constrain a refractory metal wire wound inside the slot that is used as the heater. The screw slot can hold a single heater wire that is then connected to the front of the cathode tube by tack-welding to complete the electrical circuit, or it can be a double slot that takes a bifilar wound heater with both leads coming out the back. This configuration replaces the previous sheathed heater design that limited the cycling-life of the cathode.

Goebel, Dan M.↗